IKW30N60T
TrenchStop Series
q
Power Semiconductors
1
Rev. 2.1 Dev-04
Low Loss DuoPack : IGBT in Trench and Fieldstop
technology
with soft, fast recovery anti-parallel EmCon HE diode
Very low V
CE(sat)
1.5 V (typ.)
Maximum Junction Temperature 175 C
Short circuit withstand time 5
s
Designed
for
:
- Frequency Converters
- Uninterruptible Power Supply
Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
-
low
V
CE(sat)
Positive temperature coefficient in V
CE(sat)
Low
EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
V
CE
I
C
V
CE(sat),Tj=25C
T
j,max
Marking Code
Package
Ordering Code
IKW30N60T 600V 30A
1.5V
175
C
K30T60 TO-247
Q67040S4717
Maximum Ratings
Parameter Symbol
Value
Unit
Collector-emitter voltage
V
C E
600
V
DC collector current, limited by T
jmax
T
C
= 25
C
T
C
= 100
C
I
C
60
30
Pulsed collector current, t
p
limited by T
jmax
I
C p u l s
90
Turn off safe operating area (V
CE
600V, T
j
175
C)
-
90
Diode forward current, limited by T
jmax
T
C
= 25
C
T
C
= 100
C
I
F
60
30
Diode pulsed current, t
p
limited by T
jmax
I
F p u l s
90
A
Gate-emitter voltage
V
G E
20
V
Short circuit withstand time
1)
V
GE
= 15V, V
CC
400V, T
j
150
C
t
S C
5
s
Power dissipation T
C
= 25
C
P
t o t
187
W
Operating junction temperature
T
j
-40...+175
Storage temperature
T
s t g
-55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
P-TO-247-3-1
(TO-220AC)
IKW30N60T
TrenchStop Series
q
Power Semiconductors
2
Rev. 2.1 Dev-04
Thermal Resistance
Parameter Symbol
Conditions
Max.
Value
Unit
Characteristic
IGBT thermal resistance,
junction case
R
t h J C
TO-247 0.80
Diode thermal resistance,
junction case
R
t h J C D
TO-247 1.05
Thermal resistance,
junction ambient
R
t h J A
TO-247
AC
40
K/W
Electrical Characteristic, at T
j
= 25
C, unless otherwise specified
Value
Parameter Symbol
Conditions
min. typ. max.
Unit
Static Characteristic
Collector-emitter breakdown voltage V
( B R ) C E S
V
G E
=0V, I
C
=0.2mA
600 - -
Collector-emitter saturation voltage
V
C E ( s a t )
V
G E
= 15V, I
C
=30A
T
j
=25
C
T
j
=175
C
-
-
1.5
1.9
2.05
-
Diode forward voltage
V
F
V
G E
=0V, I
F
=30A
T
j
=25
C
T
j
=175
C
-
-
1.65
1.6
2.05
-
Gate-emitter threshold voltage
V
G E ( t h )
I
C
=0.43mA,
V
C E
=V
G E
4.1 4.9 5.7
V
Zero gate voltage collector current
I
C E S
V
C E
=600V
,
V
G E
=0V
T
j
=25
C
T
j
=175
C
-
-
-
-
40
1000
A
Gate-emitter leakage current
I
G E S
V
C E
=0V,V
G E
=20V
- -
100
nA
Transconductance
g
f s
V
C E
=20V, I
C
=30A
- 16.7
-
S
Integrated gate resistor
R
G i n t
-
Dynamic Characteristic
Input capacitance
C
i s s
-
1630
-
Output capacitance
C
o s s
-
108
-
Reverse transfer capacitance
C
r s s
V
C E
=25V,
V
G E
=0V,
f=1MHz
- 50 -
pF
Gate charge
Q
G a t e
V
C C
=480V, I
C
=30A
V
G E
=15V
- 167 -
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L
E
TO-247-3-1
- 7 -
nH
Short circuit collector current
1)
I
C ( S C )
V
G E
=15V,t
S C
5
s
V
C C
= 400V,
T
j
= 150
C
- 275 -
A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
IKW30N60T
TrenchStop Series
q
Power Semiconductors
3
Rev. 2.1 Dev-04
Switching Characteristic, Inductive Load, at T
j
=25
C
Value
Parameter Symbol
Conditions
min. Typ. max.
Unit
IGBT Characteristic
Turn-on delay time
t
d ( o n )
- 23 -
Rise time
t
r
- 21 -
Turn-off delay time
t
d ( o f f )
-
254
-
Fall time
t
f
- 46 -
ns
Turn-on energy
E
o n
-
0.69
-
Turn-off energy
E
o f f
-
0.77
-
Total switching energy
E
t s
T
j
=25
C,
V
C C
=400V,I
C
=30A,
V
G E
=0/15V,
R
G
=10.6
,
L
1 )
=136nH,
C
1 )
=39pF
Energy losses include
"tail" and diode
reverse recovery.
- 1.46 -
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
r r
-
143
-
ns
Diode reverse recovery charge
Q
r r
-
0.92
-
C
Diode peak reverse recovery current I
r r m
-
16.3
-
A
Diode peak rate of fall of reverse
recovery current during t
b
di
r r
/dt
T
j
=25
C,
V
R
=400V, I
F
=30A,
di
F
/dt=910A/
s
- 603 -
A/
s
Switching Characteristic, Inductive Load, at T
j
=175
C
Value
Parameter Symbol
Conditions
min. Typ. max.
Unit
IGBT Characteristic
Turn-on delay time
t
d ( o n )
- 24 -
Rise time
t
r
- 26 -
Turn-off delay time
t
d ( o f f )
-
292
-
Fall time
t
f
- 90 -
ns
Turn-on energy
E
o n
-
1.0
-
Turn-off energy
E
o f f
-
1.1
-
Total switching energy
E
t s
T
j
=175
C,
V
C C
=400V,I
C
=30A,
V
G E
=0/15V,
R
G
= 10.6
L
1 )
=136nH,
C
1 )
=39pF
Energy losses include
"tail" and diode
reverse recovery.
- 2.1 -
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
r r
-
225
-
ns
Diode reverse recovery charge
Q
r r
-
2.39
-
C
Diode peak reverse recovery current I
r r m
-
22.3
-
A
Diode peak rate of fall of reverse
recovery current during t
b
di
r r
/dt
T
j
=175
C
V
R
=400V, I
F
=30A,
di
F
/dt=910A/
s
- 310 -
A/
s
1)
Leakage inductance L
and Stray capacity C
due to dynamic test circuit in Figure E.
IKW30N60T
TrenchStop Series
q
Power Semiconductors
4
Rev. 2.1 Dev-04
I
C
,
COL
L
E
C
T
O
R
CUR
R
E
NT
100Hz
1kHz
10kHz
100kHz
0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
T
C
=110C
T
C
=80C
I
C
,
COL
L
E
C
T
O
R
CUR
R
E
NT
1V
10V
100V
1000V
0.1A
1A
10A
100A
10s
1ms
DC
t
p
=2s
50s
10ms
f,
SWITCHING FREQUENCY
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(T
j
175
C, D = 0.5, V
CE
= 400V,
V
GE
= 0/+15V, R
G
= 10
)
Figure 2. Safe operating area
(D = 0, T
C
= 25
C, T
j
175
C;
V
GE
=15V)
P
tot
,
PO
WER
D
I
S
S
I
PATI
O
N
25C
50C
75C
100C 125C 150C
0W
40W
80W
120W
160W
I
C
,
COL
L
E
C
T
O
R
CUR
R
E
NT
25C
75C
125C
0A
10A
20A
30A
40A
50A
T
C
,
CASE TEMPERATURE
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(T
j
175
C)
Figure 4. Collector current as a function of
case temperature
(V
GE
15V, T
j
175
C)
I
c
I
c
IKW30N60T
TrenchStop Series
q
Power Semiconductors
5
Rev. 2.1 Dev-04
I
C
,
COL
L
E
C
T
O
R
CUR
R
E
NT
0V
1V
2V
3V
0A
10A
20A
30A
40A
50A
60A
70A
80A
15V
7V
9V
11V
13V
V
GE
=20V
I
C
,
COL
L
E
C
T
O
R
CUR
R
E
NT
0V
1V
2V
3V
0A
10A
20A
30A
40A
50A
15V
13V
7V
9V
11V
V
GE
=20V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristic
(T
j
= 25C)
Figure 6. Typical output characteristic
(T
j
= 175C)
I
C
,
COL
L
E
C
T
O
R
CUR
R
E
NT
0V
2V
4V
6V
8V
0A
10A
20A
30A
40A
50A
25C
T
J
=175C
V
CE
(sat),
COL
L
E
CT
OR
-
EM
I
T
T S
A
T
U
R
A
TI
ON
V
O
L
T
AGE
0C
50C
100C
150C
0.0V
0.5V
1.0V
1.5V
2.0V
2.5V
I
C
=30A
I
C
=60A
I
C
=15A
V
GE
,
GATE-EMITTER
VOLTAGE
T
J
,
JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
(V
CE
=10V)
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(V
GE
= 15V)
IKW30N60T
TrenchStop Series
q
Power Semiconductors
6
Rev. 2.1 Dev-04
t,
S
W
IT
CHIN
G
TIME
S
0A
10A
20A
30A
1ns
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
t,
S
W
IT
CHIN
G
TIME
S
10
20
30
40
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
J
=175C,
V
CE
= 400V, V
GE
= 0/15V, R
G
= 10,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
J
= 175C,
V
CE
= 400V, V
GE
= 0/15V, I
C
= 30A,
Dynamic test circuit in Figure E)
t,
S
W
IT
CHIN
G
TIME
S
25C
50C
75C
100C 125C 150C
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
V
GE
(
t
h
)
,
GAT
E
-
EM
IT
T
TRS
H
O
L
D
VO
L
T
AGE
-50C
0C
50C
100C
150C
0V
1V
2V
3V
4V
5V
6V
7V
m in.
typ.
m ax.
T
J
,
JUNCTION TEMPERATURE
T
J
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
CE
= 400V,
V
GE
= 0/15V, I
C
= 30A, R
G
=10,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(I
C
= 0.43mA)
IKW30N60T
TrenchStop Series
q
Power Semiconductors
7
Rev. 2.1 Dev-04
E
,
SW
I
T
C
H
I
N
G EN
ER
G
Y
L
O
SS
E
S
0A
10A
20A
30A
40A
50A
0.0mJ
1.0mJ
2.0mJ
3.0mJ
4.0mJ
5.0mJ
E
ts
*
E
off
*) E
on
and E
ts
include losses
due to diode recovery
E
on
*
E
,
SW
I
T
C
H
I
N
G EN
ER
G
Y
L
O
SS
E
S
0
10
20
30
40
0.0m J
1.0m J
2.0m J
3.0m J
E
ts
*
E
off
*) E
on
and E
ts
include losses
due to diode recovery
E
on
*
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
J
= 175C,
V
CE
= 400V, V
GE
= 0/15V, R
G
= 10,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
J
= 175C,
V
CE
= 400V, V
GE
= 0/15V, I
C
= 30A,
Dynamic test circuit in Figure E)
E
,
SW
I
T
C
H
I
N
G EN
ER
G
Y
L
O
S
S
E
S
25C
50C
75C
100C 125C 150C
0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
1.2mJ
1.4mJ
1.6mJ
E
ts
*
E
off
*) E
on
and E
ts
include losses
due to diode recovery
E
on
*
E
,
SW
I
T
C
H
I
N
G EN
ER
G
Y
L
O
S
S
E
S
300V 350V 400V 450V 500V 550V
0.0m J
0.5m J
1.0m J
1.5m J
2.0m J
2.5m J
3.0m J
E
ts
*
E
on
*
*) E
on
and E
ts
include losses
due to diode recovery
E
off
T
J
,
JUNCTION TEMPERATURE
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, V
CE
= 400V,
V
GE
= 0/15V, I
C
= 30A, R
G
= 10,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, T
J
= 175C,
V
GE
= 0/15V, I
C
= 30A, R
G
= 10,
Dynamic test circuit in Figure E)
IKW30N60T
TrenchStop Series
q
Power Semiconductors
8
Rev. 2.1 Dev-04
V
GE
,
GA
T
E
-
EMI
T
T
E
R V
O
LT
AG
E
0nC
30nC 60nC 90nC 120nC 150nC 180nC
0V
5V
10V
15V
480V
120V
c,
CAP
A
C
I
T
A
N
C
E
0V
10V
20V
30V
40V
100pF
1nF
C
rss
C
oss
C
iss
Q
GE
,
GATE CHARGE
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 17. Typical gate charge
(I
C
=30 A)
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(V
GE
=0V, f = 1 MHz)
I
C
(
sc
)
, sho
r
t
ci
r
c
uit
C
O
LLE
C
T
O
R
CU
RRE
NT
12V
14V
16V
18V
0A
100A
200A
300A
400A
t
SC
,
SH
ORT
C
I
R
CUI
T
WI
T
H
ST
AND
TI
M
E
10V
11V
12V
13V
14V
0s
2s
4s
6s
8s
10s
12s
V
GE
,
GATE
-
EMITTETR VOLTAGE
V
GE
,
GATE
-
EMITETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
(V
CE
400V, T
j
150
C)
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(V
CE
=600V, start at T
J
=25C,
T
Jmax
<150C)
IKW30N60T
TrenchStop Series
q
Power Semiconductors
9
Rev. 2.1 Dev-04
Z
th
JC
,
TRAN
SI
EN
T TH
E
R
M
A
L
R
E
SI
ST
AN
C
E
1s
10s 100s 1ms
10ms 100ms
10
-2
K/W
10
-1
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
Z
th
JC
,
TRAN
SI
EN
T TH
E
R
M
A
L
R
E
SI
ST
AN
C
E
100ns 1s 10s 100s 1ms 10ms100ms
10
-2
K/W
10
-1
K/W
10
0
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
t
P
,
PULSE WIDTH
t
P
,
PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(D = t
p
/ T)
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(D=t
P
/T)
t
rr
,
R
EVER
S
E
R
E
C
O
V
E
R
Y
T
I
M
E
700A/s
800A/s
900A/s 1000A/s
0ns
50ns
100ns
150ns
200ns
250ns
T
J
=25C
T
J
=175C
Q
rr
,
R
EVE
R
S
E REC
O
VER
Y
CH
A
R
G
E
700A/s
800A/s
900A/s
1000A/s
0.0C
0.5C
1.0C
1.5C
2.0C
T
J
=25C
T
J
=175C
di
F
/dt,
DIODE CURRENT SLOPE
di
F
/dt,
DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(V
R
=400V, I
F
=30A,
Dynamic test circuit in Figure E)
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(V
R
= 400V, I
F
= 30A,
Dynamic test circuit in Figure E)
R
, ( K / W )
,
( s )
0.29566 6.478*10
-2
0.25779 6.12*10
-3
0.19382 4.679*10
-4
0.05279 6.45*10
-5
C
1
=
1
/ R
1
R
1
R
2
C
2
=
2
/R
2
R
, ( K / W )
,
( s )
0.19517 1.079*10
-1
6
0.26773 1.546*10
-2
0.31252 2.297*10
-3
0.22545 2.234*10
-4
0.04916 7.5*10
-6
C
1
=
1
/R
1
R
1
R
2
C
2
=
2
/R
2
IKW30N60T
TrenchStop Series
q
Power Semiconductors
10
Rev. 2.1 Dev-04
I
rr
,
RE
VERSE
R
E
C
O
V
E
R
Y
CURR
E
N
T
700A/s
800A/s
900A/s
1000A/s
0A
5A
10A
15A
20A
T
J
=25C
T
J
=175C
di
rr
/d
t
,
DI
ODE
PE
A
K
R
A
T
E
O
F
FA
L
L
O
F
RE
V
E
R
S
E
RE
CO
V
E
R
Y
C
U
RR
E
N
T
700A/s
800A/s
900A/s
1000A/s
0A/s
-150A/s
-300A/s
-450A/s
-600A/s
T
J
=25C
T
J
=175C
di
F
/dt,
DIODE CURRENT SLOPE
di
F
/dt,
DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(V
R
= 400V, I
F
= 30A,
Dynamic test circuit in Figure E)
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(V
R
=400V, I
F
=30A,
Dynamic test circuit in Figure E)
I
F
,
FORW
AR
D CUR
R
E
N
T
0V
1V
2V
0A
10A
20A
30A
40A
50A
60A
70A
175C
T
J
=25C
V
F
,
F
O
RW
A
RD VO
LTA
G
E
0C
50C
100C
150C
0.0V
0.5V
1.0V
1.5V
2.0V
30A
I
F
=60A
15A
V
F
,
FORWARD VOLTAGE
T
J
,
JUNCTION TEMPERATURE
Figure 27. Typical diode forward current as
a function of forward voltage
Figure 28. Typical diode forward voltage as a
function of junction temperature
IKW30N60T
TrenchStop Series
q
Power Semiconductors
11
Rev. 2.1 Dev-04
dimensions
symbol
[mm]
[inch]
min
max
min
max
A
4.78
5.28
0.1882 0.2079
B
2.29
2.51
0.0902 0.0988
C
1.78
2.29
0.0701 0.0902
D
1.09
1.32
0.0429 0.0520
E
1.73
2.06
0.0681 0.0811
F
2.67
3.18
0.1051 0.1252
G
0.76 max
0.0299 max
H
20.80
21.16
0.8189 0.8331
K
15.65
16.15
0.6161 0.6358
L
5.21
5.72
0.2051 0.2252
M
19.81
20.68
0.7799 0.8142
N
3.560
4.930
0.1402 0.1941
P
3.61
0.1421
Q
6.12
6.22
0.2409 0.2449
TO-247AC
IKW30N60T
TrenchStop Series
q
Power Semiconductors
12
Rev. 2.1 Dev-04
Figure A. Definition of switching times
Figure B. Definition of switching losses
I
r r m
90% I
r r m
10% I
r r m
di /dt
F
t
r r
I
F
i,v
t
Q
S
Q
F
t
S
t
F
V
R
di /dt
r r
Q =Q
Q
r r
S
F
+
t =t
t
r r
S
F
+
Figure C. Definition of diodes
switching characteristics
p(t)
1
2
n
T (t)
j
1
1
2
2
n
n
T
C
r
r
r
r
r
r
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
IKW30N60T
TrenchStop Series
q
Power Semiconductors
13
Rev. 2.1 Dev-04
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
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please contact your nearest Infineon Technologies Office.
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