Data Sheet
1
05.99
SIPMOS
Small-Signal-Transistor
Features
Dual N Channel
Enhancement mode
Avalanche rated
Logic Level
d
v
/d
t
rated
Product Summary
Drain source voltage
V
DS
30
V
Drain-Source on-state resistance
R
DS(on)
0.035
Continuous drain current
I
D
6
A
Type
Package
Ordering Code
BSO 305 N
SO 8
Q67041-S4028
Continuous drain current,
one channel active
T
C
= 25 C,
T
A
= 25 C
I
D
6
A
Pulsed drain current,
one channel active
T
C
= 25 C
24
I
Dpulse
Avalanche energy, single pulse
I
D
= 6 A,
V
DD
= 25 V,
R
GS
= 25
mJ
E
AS
100
Avalanche current,periodic limited by
T
jmax
I
AR
6
A
Avalanche energy, periodic limited by
T
jmax
mJ
E
AR
0.2
Reverse diode d
v
/d
t
I
S
= 6 A,
V
DS
= 24 V, d
i
/d
t
= 200 A/s,
T
jmax
= 150 C
d
v
/d
t
6
kV/s
Gate source voltage
V
V
GS
20
Power dissipation,
one channel active
T
C
= 25 C
P
tot
2
W
Operating temperature
C
T
j
-55 ... +150
Storage temperature
T
stg
-55 ... +150
IEC climatic category; DIN IEC 68-1
55/150/56
Maximum Ratings, at
T
j = 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Preliminary Data
BSO 305N
BSO 305N
Data Sheet
2
05.99
Thermal Characteristics
Parameter
Symbol
Unit
Values
typ.
min.
max.
Characteristics
35
K/W
R
thJS
-
-
Thermal resistance, junction - soldering point
90
R
th(JA)
-
Thermal resistance @ 10 sec., min. footprint
-
62.5
R
th(JA)
-
-
Thermal resistance @ 10 sec.,
6 cm
2
cooling area
1)
Electrical Characteristics, at
T
j = 25 C, unless otherwise specified
Parameter
Values
Symbol
Unit
typ.
min.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 C
V
(BR)DSS
30
-
-
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 30 A
V
GS(th)
1.2
1.6
2
Zero gate voltage drain current
V
DS
= 30 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= 30 V,
V
GS
= 0 V,
T
j
= 150 C
I
DSS
-
-
0.1
-
1
100
A
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
I
GSS
-
10
100
nA
Drain-Source on-state resistance
V
GS
= 4.5 V,
I
D
= 5 A
V
GS
= 10 V,
I
D
= 6 A
R
DS(on)
-
-
0.033
0.023
0.05
0.035
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain
connection. PCB is vertical without blown air.
BSO 305N
Data Sheet
3
05.99
Electrical Characteristics
Parameter
Values
Symbol
Unit
max.
min.
typ.
Characteristics
S
Transconductance
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
= 6 A
12
-
6
g
fs
pF
C
iss
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
-
815
650
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
300
-
C
oss
375
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
rss
-
200
160
-
ns
Turn-on delay time
V
DD
= 15 V,
V
GS
= 4.5 V,
I
D
= 5 A,
R
G
= 9.1
t
d(on)
24
16
75
t
r
Rise time
V
DD
= 15 V,
V
GS
= 4.5 V,
I
D
= 5 A,
R
G
= 9.1
ns
-
50
23
Turn-off delay time
V
DD
= 15 V,
V
GS
= 4.5 V,
I
D
= 5 A,
R
G
= 9.1
t
d(off)
15
-
33
Fall time
V
DD
= 15 V,
V
GS
= 4.5 V,
I
D
= 5 A,
R
G
= 9.1
-
t
f
ns
22
BSO 305N
Data Sheet
4
05.99
Electrical Characteristics, at
T
j = 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
at
T
j = 25 C, unless otherwise specified
min.
typ.
max.
Dynamic Characteristics
Gate charge at threshold
V
DD
= 24 V,
I
D
= 0.1 A,
V
GS
= 0 to 1 V
Q
G(th)
-
0.9
1.4
nC
Gate charge at
V
gs
=5V
V
DD
= 24 V,
I
D
= 6 A ,
V
GS
= 0 to 5 V
Q
g(5)
-
16
24
Gate charge total
V
DD
= 24 V,
I
D
= 6 A,
V
GS
= 0 to 10 V
Q
g
-
25
38
nC
Gate plateau voltage
V
DD
= 24 V,
I
D
= 6 A
V
(plateau)
-
3.2
V
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 C
I
S
-
-
6
A
Inverse diode direct current,pulsed
T
A
= 25 C
I
SM
-
-
24
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 12 A
V
SD
-
1.3
1.7
V
Reverse recovery time
V
R
= 15 V,
I
F
=
I
S
, d
i
F
/d
t
= 100 A/s
t
rr
-
45
70
ns
Reverse recovery charge
V
R
= 15 V,
I
F=
l
S
, d
i
F
/d
t
= 100 A/s
Q
rr
-
45
70
C
BSO 305N
Data Sheet
5
05.99
Drain current
I
D
=
f
(
T
A
)
0
20
40
60
80
100
120
C
160
T
A
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
A
6.5
BSO 305 N
I
D
Power dissipation
P
tot
=
f
(
T
A
)
0
20
40
60
80
100
120
C
160
T
A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
W
2.6
BSO 305 N
P
tot
Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25 C
10
-1
10
0
10
1
10
2
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A
BSO 305 N
I
D
R
DS(
on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 s
10 s
t
p
= 3.9s
Transient thermal impedance
Z
thJA
=
f
(t
p
)
parameter :
D
=
t
p
/
T
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
s
t
p
-1
10
0
10
1
10
2
10
K/W
BSO 305 N
Z
thJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
BSO 305N
Data Sheet
6
05.99
Typ. output characteristics
I
D
=
f
(
V
DS
)
parameter:
t
p
= 80 s
0.0
0.5 1.0
1.5 2.0
2.5 3.0
3.5 4.0
V
5.0
V
DS
0
1
2
3
4
5
6
7
8
9
10
11
12
A
15
BSO 305 N
I
D
V
GS
[V]
a
a
2.5
b
b
3.0
c
c
3.5
d
d
4.0
e
e
4.5
f
f
5.0
g
g
5.5
h
h
6.0
i
i
6.5
j
j
7.0
k
k
8.0
l
P
tot
= 2W
l
10.0
Drain-source on-resistance
R
DS(on)
=
f
(
T
j
)
parameter :
I
D
= 5 A,
V
GS
= 4.5 V
-60
-20
20
60
100
140
C
200
T
j
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.13
BSO 305 N
R
DS(on)
typ
98%
Typ. capacitances
C =
f
(V
DS
)
parameter:
V
GS
= 0 V,
f
= 1 MHz
0
5
10
15
20
V
30
V
DS
2
10
3
10
4
10
pF
C
C
is
C
o
C
rs
BSO 305N
Data Sheet
7
05.99
Typ. transfer characteristics
I
D
=
f
(
V
GS
)
parameter:
t
p
= 80 s
V
DS
2 x
I
D
x
R
DS(on) max
0
1
2
3
V
5
V
GS
0
2
4
6
8
A
12
I
D
Gate threshold voltage
V
GS(th)
=
f
(
T
j
)
parameter :
V
GS
=
V
DS
,
I
D
= 30 A
-60
-20
20
60
100
V
160
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
3.0
V
GS(th)
min
typ
max
Forward characteristics of reverse diode
I
F
=
f
(
V
SD
)
parameter:
T
j
,
t
p
= 80 s
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
V
SD
-1
10
0
10
1
10
2
10
A
BSO 305 N
I
F
T
j
= 25 C typ
T
j
= 25 C (98%)
T
j
= 150 C typ
T
j
= 150 C (98%)
BSO 305N
Data Sheet
8
05.99
Avalanche Energy
E
AS
=
f
(
T
j
)
parameter:
I
D
= 6 A,
V
DD
= 25 V
R
GS
= 25
20
40
60
80
100
120
C
160
T
j
0
10
20
30
40
50
60
70
80
mJ
100
E
AS
Typ. gate charge
V
GS
=
f
(
Q
Gate
)
parameter:
I
D puls
= 6 A
0
4
8
12
16
20
24
28
nC
36
Q
Gate
0
2
4
6
8
10
12
V
16
BSO 305 N
V
GS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V
(BR)DSS
=
f
(
T
j
)
-60
-20
20
60
100
C
180
T
j
27
28
29
30
31
32
33
34
35
V
37
BSO 305 N
V
(BR)DSS
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