Preliminary
SIDC14D120E6
Edited by INFINEON Technologies AI PS DD HV3, L 4172P, Edition 1, 8.01.2002
Fast switching diode chip in EMCON-Technology
This chip is used for:
EUPEC power modules and
discrete devices
FEATURES:
1200V EMCON technology 130 m chip
soft, fast switching
low reverse recovery charge
small temperature coefficient
Applications:
SMPS, resonant applications,
drives
A
C
Chip Type
V
R
I
F
Die Size
Package
Ordering Code
SIDC14D120E6
1200V 15A
3.8 x 3.8 mm
2
sawn on foil
Q67050-A4123-
A001
MECHANICAL PARAMETER:
Raster size
3.8 x 3.8
Area total / active
14.44 / 9.8
Anode pad size
3.08 x 3.08
mm
2
Thickness
130
m
Wafer size
150
mm
Flat position
180
deg
Max. possible chips per wafer
1018 pcs
Passivation frontside
Photoimide
Anode metallisation
3200 nm AlSiCu
Cathode metallisation
1400 nm Ni Ag system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al,
500m
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23C
Preliminary
SIDC14D120E6
Edited by INFINEON Technologies AI PS DD HV3, L 4172P, Edition 1, 8.01.2002
Maximum Ratings
Parameter
Symbol
Condition
Value
Unit
Repetitive peak reverse voltage
V
R R M
1200
V
Continuous forward current limited by
T
jmax
I
F
15
Single pulse forward current
(depending on wire bond configuration)
I
FSM
t
P
= 10 ms sinusoidal
tbd
Maximum repetitive forward current
limited by T
jmax
I
FRM
30
A
Operating junction and storage
temperature
T
j
, T
s t g
-55...+150
C
Static Electrical Characteristics
(tested on chip), Tj=25
C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
Reverse leakage current
I
R
V
R
=1200V
T
j
=25
C
27
A
Cathode-Anode
breakdown Voltage
V
Br
I
R
=1mA
T
j
= 2 5 C
1200
V
Forward voltage drop
V
F
I
F
= 1 5 A
T
j
=25
C
1.9
V
Dynamic Electrical Characteristics
, at T
j
= 25
C, unless otherwise specified, tested at component
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
t
rr1
I
F
=15A
T
j
= 2 5 C
tbd
Reverse recovery time
t
rr2
di/dt=390A/
s
V
R
=600V
T
j
= 1 2 5 C
ns
I
R R M 1
T
j
= 2 5 C
10.9
Peak recovery current
I
R R M 2
I
F
=15A
di/dt=390A/
s
V
R
= 600V
T
j
= 1 2 5 C
14.5
A
Q
rr1
T
j
=25
C
1.45
Reverse recovery charge
Q
rr2
I
F
=15A
di/dt=390A/
s
V
R
= 600V
T
j
= 1 2 5
C
3.23
C
di
r r 1
/dt
T
j
= 25
C
tbd
Peak rate of fall of reverse
recovery current
di
r r 2
/dt
I
F
=15A
di/dt=390A/
s
V
R
= 600V
T
j
= 1 2 5
C
A/
s
S 1
T
j
=25
C
tbd
Softness
S 2
I
F
=15A
di/dt=390A/
s
V
R
= 600V
T
j
= 1 2 5
C
1
Preliminary
SIDC14D120E6
Edited by INFINEON Technologies AI PS DD HV3, L 4172P, Edition 1, 8.01.2002
CHIP DRAWING:
Preliminary
SIDC14D120E6
Edited by INFINEON Technologies AI PS DD HV3, L 4172P, Edition 1, 8.01.2002
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
INFINEON TECHNOLOGIES /
EUPEC
tbd
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prffeld
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Strasse 53
D-81541 Mnchen
Infineon Technologies AG 2000
All Rights Reserved.
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