Preliminary
SIDC73D170E6
Edited by INFINEON Technologies AI PS DD HV3, L4381M, Edition 1, 28.02.02
Fast switching diode chip in EMCON-Technology
This chip is used for:
EUPEC power modules and
discrete devices
FEATURES:
1700V EMCON technology 200 m chip
soft , fast switching
low reverse recovery charge
small temperature coefficient
Applications:
SMPS, resonant applications,
drives
A
C
Chip Type
V
R
I
F
Die Size
Package
Ordering Code
SIDC73D170E6
1700V 100A
8.53 x 8.53 mm
2
sawn on foil
Q67050-A4173-
A001
MECHANICAL PARAMETER:
Raster size
8.53 x 8.53
Area total / active
72.76 / 54.17
Anode pad size
6.51 x 6.51
mm
2
Thickness
200
m
Wafer size
150
mm
Flat position
180
deg
Max. possible chips per wafer
190 pcs
Passivation frontside
Photoimide
Anode metalization
3200 nm Al Si Cu
Cathode metalization
1400 nm Ni Ag system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al,
500m
Reject Ink Dot Size
0.65mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23C
Preliminary
SIDC73D170E6
Edited by INFINEON Technologies AI PS DD HV3, L4381M, Edition 1, 28.02.02
Maximum Ratings
Parameter
Symbol
Condition
Value
Unit
Repetitive peak reverse voltage
V
R R M
1700
V
Continuous forward current limited by
T
jmax
I
F
100
Single pulse forward current
(depending on wire bond configuration)
I
FSM
t
P
= 10 ms sinusoidal
tbd
Maximum repetitive forward current
limited by T
jmax
I
FRM
200
A
Operating junction and storage
temperature
T
j
, T
s t g
-55...+150
C
Static Electrical Characteristics
(tested on chip), Tj=25
C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
Reverse leakage current
I
R
V
R
=1700V
T
j
=25
C
27
A
Cathode-Anode
breakdown Voltage
V
Br
I
R
=4mA
T
j
= 2 5 C
1700
V
Forward voltage drop
V
F
I
F
=100A
T
j
=25
C
2.15
V
Dynamic Electrical Characteristics
, at T
j
= 25
C, unless otherwise specified, tested at component
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
t
rr1
I
F
= 1 0 0 A
T
j
= 25 C
tbd
Reverse recovery time
t
rr2
di/dt=1700A/
s
V
R
=900V
T
j
= 150 C
ns
I
R R M 1
T
j
= 25 C
110
Peak recovery current
I
R R M 2
I
F
= 1 0 0 A
di/dt=1700A/
s
V
R
=900V
T
j
= 150 C
130
A
Q
rr1
T
j
=25
C
35
Reverse recovery charge
Q
rr2
I
F
= 1 0 0 A
di/dt=1700A/
s
V
R
=900V
T
j
= 1 5 0
C
60
C
di
r r 1
/dt
T
j
= 25
C
tbd
Peak rate of fall of reverse
recovery current
di
r r 2
/dt
I
F
= 1 0 0 A
di/dt=1700A/
s
V
R
=900V
T
j
= 1 5 0
C
A/
s
S 1
T
j
=25
C
tbd
Softness
S 2
I
F
= 1 0 0 A
di/dt=1700A/
s
V
R
=900V
T
j
= 1 5 0
C
1
Preliminary
SIDC73D170E6
Edited by INFINEON Technologies AI PS DD HV3, L4381M, Edition 1, 28.02.02
CHIP DRAWING:
Preliminary
SIDC73D170E6
Edited by INFINEON Technologies AI PS DD HV3, L4381M, Edition 1, 28.02.02
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
INFINEON TECHNOLOGIES /
EUPEC
tbd
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prffeld
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Strasse 53
D-81541 Mnchen
Infineon Technologies AG 2000
All Rights Reserved.
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