2004-01-27
Page 1
BTS 4140 N
Smart High-Side Power Switch
One Channel: 1 x 1
Features
Current controlled input
Short circuit protection
Current limitation
Overload protection
Overvoltage protection (including load dump)
Switching inductive loads
Clamp of negative voltage at output
with inductive loads
Thermal shutdown with restart
ESD - Protection
Loss of GND and loss of V
bb
protection
Very low standby current
Reverse battery protection
Improved electromagnetic compatibility (EMC)
Product Summary
Overvoltage protection
V
bbin(AZ)
62
V
Operating voltage
V
bb(on)
4.9...60 V
On-state resistance
R
ON
1
SOT-223
VPS05163
1
2
3
4
Application
All types of resistive, inductive and capacitive loads
Current controlled power switch for 12V, 24V and 42V DC applications
Driver for electromechanical relays
Signal amplifier
General Description
N channel vertical power MOSFET with charge pump and current controlled input,
monolithically integrated in Smart SIPMOS
technology.
Providing embedded protective functions.
2004-01-27
Page 2
BTS 4140 N
Block Diagram
+ V bb
G N D
C o n tro l
C irc u it
R
T e m p e ra tu re
S e n s o r
1
3
O U T
IN
R L
IN
2 /4
Function
Input, activates the power switch in case of connection to GND
Positive power supply voltage
Output to the load
Positive power supply voltage
Pin
Symbol
1
IN
2
Vbb
3
OUT
4
Vbb
2004-01-27
Page 3
BTS 4140 N
Maximum Ratings
Parameter
at T
j
= 25C, unless otherwise specified
Symbol
Value
Unit
Supply voltage
V
bb
60
V
Load current (Short - circuit current, see page 5) I
L
self limited
A
Maximum current through the input pin ( DC )
I
IN
15
mA
Operating temperature
T
j
-40 ...+150
C
Storage temperature
T
stg
-55 ... +150
Power dissipation
1)
T
A
= 25 C
P
tot
1.7
W
Inductive load switch-off energy dissipation
2)
single pulse
T
j
= 150 C, I
L
= 0.15 A
E
AS
1
J
Load dump protection
3)
V
LoadDump
4)
= V
A
+ V
S
R
I
=2
, t
d
=400ms, V
IN
= low or high
I
L
= 150 mA, V
bb
= 13,5 V
V
bb
= 27 V
V
Loaddump
93.5
127
V
Electrostatic discharge voltage
(Human Body Model)
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
Input pin
all other pins
V
ESD
1
5
kV
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air.
2not subject to production test, specified by design
3more details see EMC-Characteristics on page 7
4VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
2004-01-27
Page 4
BTS 4140 N
Electrical Characteristics
Parameter
Symbol
Values
Unit
at T
j
= -40...150 C, V
bb
= 9...42 V unless otherwise specified
min.
typ.
max.
Thermal Characteristics
Thermal resistance @ min. footprint
R
th(JA)
-
86
125
K/W
Thermal resistance @ 6 cm
2
cooling area
1)
R
th(JA)
-
60
72
Thermal resistance, junction - soldering point
R
thJS
-
-
17
K/W
Load Switching Capabilities and Characteristics
On-state resistance
Pin1 connencted to GND
T
j
= 25 C, I
L
= 150 mA, V
bb
= 9...52 V
T
j
= 150 C
T
j
= 25 C, I
L
= 50 mA, V
bb
= 6 V
R
ON
-
-
-
1
1.5
2
1.5
3
5
Nominal load current
2)
Device on PCB
1)
T
a
= 85 C , T
j
150 C
I
L(nom)
0.2
-
-
A
Turn-on time
3)
VIN = Vbb to 0V
to 90% V
OUT
R
L
= 270
R
L
= 270
, V
bb
= 13.5 V,
T
j
= 25 C
t
on
-
-
-
45
125
4)
100
s
Turn-off time
3)
VIN = 0V to Vbb
to 10% V
OUT
R
L
= 270
R
L
= 270
, V
bb
= 13.5 V,
T
j
= 25 C
t
off
-
-
-
40
175
4)
140
Slew rate on
3)
VIN = Vbb to 0V 10 to 30% V
OUT
R
L
= 270
R
L
= 270
,
T
j
= 25 C, V
bb
= 13.5 V
dV/dt
on
-
-
-
1.3
6
4)
4
V/s
Slew rate off
3)
VIN = 0V to Vbb
70 to 40% V
OUT
R
L
= 270
R
L
= 270
,
T
j
= 25 C, V
bb
= 13.5 V
-dV/dt
off
-
-
-
1.7
8
4)
4
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air.
2Nominal load current is limited by the current limitation ( see page 5 )
3Timing values only with high input slewrates, otherwise slower.
4not subject to production test, specified by design
2004-01-27
Page 5
BTS 4140 N
Electrical Characteristics
Parameter
Symbol
Values
Unit
at T
j
= -40...150 C, V
bb
= 9...42 V unless otherwise specified
min.
typ.
max.
Operating Parameters
Operating voltage
V
bb(on)
4.9
-
60
V
Standby current
Pin1 = open
I
bb(off)
-
2
10
A
Protection Functions
1)
Initial peak short circuit current limit
(see page 11)
T
j
= -40 C, V
bb
= 13.5 V, t
m
= 100 s
T
j
= 25 C
T
j
= 150 C
I
L(SCp)
-
-
0.2
-
0.9
-
1.2
-
-
A
Repetitive short circuit current limit
T
j
= T
jt
I
L(SCr)
-
0.7
-
Output clamp (inductive load switch off)
at V
OUT
= V
bb
- V
ON(CL)
,
I
bb
= 4 mA
V
ON(CL)
60
-
-
V
Overvoltage protection
I
bb
= 1 mA
V
bbin(AZ)
62
68
-
Thermal overload trip temperature
T
jt
150
-
-
C
Thermal hysteresis
T
jt
-
10
-
K
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
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