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PROFET BTS426L1
Semiconductor Group
1 of 14
2003-Oct-01
Smart Highside Power Switch
Features
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
1)
Undervoltage and overvoltage shutdown with auto-restart
and hysteresis
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of V
bb
protection
Electrostatic discharge (ESD) protection
Application
C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically
integrated in Smart SIPMOS
technology. Providing embedded protective functions.
+ Vbb
IN
ST
Signal GND
ESD
PROFET
OUT
GND
Logic
Voltage
sensor
Voltage
source
Charge pump
Level shifter
Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
3
5
Load GND
Load
V
Logic
Overvoltage
protection
GND
R
O
Open load
detection
Short to Vbb
1
) With external current limit (e.g. resistor R
GND
=150
) in GND connection, resistor in series with ST connection, reverse load
current limited by connected load.
Product Summary
Overvoltage protection
V
bb(AZ)
43
V
Operating voltage
V
bb(on)
5.0 ... 34 V
On-state resistance
R
ON
60
m
Load current (ISO)
I
L(ISO)
7.0
A
Current limitation
I
L(SCr)
16
A
TO-220AB/5
5
Standard
1
5
Straight leads
1
5
SMD
BTS426L1
Semiconductor Group
2
2003-Oct-01
Pin Symbol
Function
1 GND
-
Logic
ground
2
IN
I
Input, activates the power switch in case of logical high signal
3 Vbb
+
Positive power supply voltage,
the tab is shorted to this pin
4
ST
S
Diagnostic feedback, low on failure
5 OUT
(Load, L)
O
Output to the load
Maximum Ratings at T
j
= 25 C unless otherwise specified
Parameter Symbol
Values
Unit
Supply voltage (overvoltage protection see page 3)
V
bb
43
V
Supply voltage for full short circuit protection
T
j Start
=-40 ...+150C
V
bb
34 V
Load dump protection
2
)
V
LoadDump
= U
A
+ V
s
, U
A
= 13.5 V
R
I
3
)
= 2
, R
L
= 1.7
, t
d
= 200 ms, IN= low or high
V
Load dump
4
)
60 V
Load current (Short circuit current, see page 4)
I
L
self-limited
A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
C
Power dissipation (DC), T
C
25 C
P
tot
75
W
Inductive load switch-off energy dissipation, single pulse
V
bb
=
12V, T
j,start
=
150C, T
C
=
150C const.
I
L
=
7.0
A, Z
L
=
24
mH, 0
:
E
AS
0.74
J
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
V
ESD
1.0
2.0
kV
Input voltage (DC)
V
IN
-10 ... +16
V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
I
IN
I
ST
2.0
5.0
mA
Thermal Characteristics
Parameter and Conditions
Symbol
Values
Unit
min typ max
Thermal resistance
chip - case:
junction - ambient (free air):
R
thJC
R
thJA
--
--
--
--
1.67
75
K/W
SMD version, device on PCB
5)
:
34
2
) Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins, e.g. with a 150
resistor in the
GND connection and a 15 k
resistor in series with the status pin. A resistor for the protection of the input is integrated.
3)
R
I
= internal resistance of the load dump test pulse generator
4)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5
) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
m thick) copper area for Vbb connection. PCB is vertical
without blown air.
BTS426L1
Semiconductor Group
3
2003-Oct-01
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at T
j
= 25 C, V
bb
= 12 V unless otherwise specified
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
L
= 2 A
T
j
=25 C:
T
j
=150 C:
R
ON
--
50
100
60
120
m
Nominal load current, ISO Norm (pin 3 to 5)
V
ON
= 0.5 V, T
C
= 85 C
I
L(ISO)
5.8 7.0
-- A
Output current (pin
5
) while GND disconnected or GND pulled
up, V
bb
=30 V, V
IN
= 0, see diagram page 7
I
L(GNDhigh)
-- -- 10
mA
Turn-on time
IN
to 90% V
OUT
:
Turn-off time
IN
to 10% V
OUT
:
R
L
= 12
,
T
j
=-40...+150C
t
on
t
off
80
80
200
230
400
450
s
Slew rate on
10 to 30% V
OUT
,
R
L
= 12
,
T
j
=-40...+150C
dV /dt
on
0.1
--
1
V/
s
Slew rate off
70 to 40% V
OUT
, R
L
= 12
,
T
j
=-40...+150C
-dV/dt
off
0.1
--
1
V/
s
Operating Parameters
Operating voltage
6
)
T
j
=-40...+150C: V
bb(on)
5.0
--
34
V
Undervoltage shutdown
T
j
=-40...+150C: V
bb(under)
3.5
--
5.0
V
Undervoltage restart
T
j
=-40...+25C:
T
j
=+150C:
V
bb(u rst)
--
--
5.0
7.0
V
Undervoltage restart of charge pump
see diagram page 12
T
j
=-40...+150C:
V
bb(ucp)
-- 5.6 7.0 V
Undervoltage hysteresis
V
bb(under)
= V
bb(u rst)
- V
bb(under)
V
bb(under)
-- 0.2 -- V
Overvoltage shutdown
T
j
=-40...+150C: V
bb(over)
34
--
43
V
Overvoltage restart
T
j
=-40...+150C: V
bb(o rst)
33 -- -- V
Overvoltage hysteresis
T
j
=-40...+150C:
V
bb(over)
-- 0.5 -- V
Overvoltage protection
7
)
T
j
=-40...+150C:
I
bb
=40 mA
V
bb(AZ)
42
47
-- V
Standby current (pin 3)
V
IN
=0
T
j
=-40...+25C
:
T
j
= 150C:
I
bb(off)
--
--
10
12
25
28
A
Leakage output current (included in I
bb(off)
)
V
IN
=0
I
L(off)
-- -- 12
A
Operating current (Pin 1)
8)
, V
IN
=5 V, T
j
=-40...+150C
I
GND
-- 1.8 3.5
mA
6)
At supply voltage increase up to V
bb
= 5.6 V typ without charge pump, V
OUT
V
bb
- 2 V
7)
See also V
ON(CL)
in table of protection functions and circuit diagram page 7.
8
)
Add I
ST
, if I
ST
> 0, add I
IN
, if V
IN
>5.5 V
BTS426L1
Parameter and Conditions
Symbol
Values
Unit
at T
j
= 25 C, V
bb
= 12 V unless otherwise specified
min typ max
Semiconductor Group
4
2003-Oct-01
Protection Functions
9)
Initial peak short circuit current limit (pin 3 to 5)
I
L(SCp)
T
j
=-40C:
T
j
=25C:
T
j
=+150C:
21
15
11
32
25
17
43
35
24
A
Repetitive short circuit shutdown current limit
I
L(SCr)
T
j
= T
jt
(see timing diagrams, page 10)
--
16
--
A
Output clamp (inductive load switch off)
at V
OUT
= V
bb
- V
ON(CL)
I
L
= 40 mA:
V
ON(CL)
41
47 53 V
Thermal overload trip temperature
T
jt
150 -- --
C
Thermal hysteresis
T
jt
-- 10 -- K
Reverse battery (pin 3 to 1)
10
)
-V
bb
--
--
32
V
Reverse battery voltage drop
(V
out
> V
bb
)
I
L
= -4 A
T
j
=150 C:
-V
ON(rev)
--
610
--
mV
Diagnostic Characteristics
Open load detection current
T
j
=-40 C
:
(on-condition)
T
j
=25 ..150C:
I
L (OL)
20
10
--
--
850
750
mA
Open load detection voltage
11
) (off-condition)
T
j
=-40..150C:
V
OUT(OL)
2 3
4 V
Internal output pull down
(pin 5 to 1), V
OUT
=5 V, T
j
=-40..150C
R
O
4
10 30
k
9
) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault
conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive
operation.
10
) Requires 150
resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by
the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop
across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status
currents have to be limited (see max. ratings page 2 and circuit page 7).
11)
External pull up resistor required for open load detection in off state.
BTS426L1
Parameter and Conditions
Symbol
Values
Unit
at T
j
= 25 C, V
bb
= 12 V unless otherwise specified
min typ max
Semiconductor Group
5
2003-Oct-01
Input and Status Feedback
12
)
Input resistance
T
j
=-40..150C, see circuit page 6
R
I
2.5
3.5 6
k
Input turn-on threshold voltage
T
j
=-40..+150C: V
IN(T+)
1.7 --
3.5 V
Input turn-off threshold voltage
T
j
=-40..+150C: V
IN(T-)
1.5 -- -- V
Input threshold hysteresis
V
IN(T)
-- 0.5 -- V
Off state input current (pin 2), V
IN
= 0.4 V,
T
j
=-40..+150C
I
IN(off)
1
--
50
A
On state input current (pin 2), V
IN
= 3.5 V,
T
j
=-40..+150C
I
IN(on)
20 50 90
A
Delay time for status with open load after switch off
(see timing diagrams, page 11
), T
j
=-40..+150C
t
d(ST OL4)
100 520 1000
s
Status invalid after positive input slope
(open load)
Tj=-40 ... +150C:
t
d(ST)
-- 250 600
s
Status output (open drain)
Zener limit voltage
T
j
=-40...+150C, I
ST
= +1.6 mA:
ST low voltage
T
j
=-40...+25C, I
ST
= +1.6 mA:
T
j
= +150C, I
ST
= +1.6 mA:
V
ST(high)
V
ST(low)
5.4
--
--
6.1
--
--
--
0.4
0.6
V
12)
If a ground resistor R
GND
is used, add the voltage drop across this resistor.
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