PROFET BTS 442 E2
Semiconductor Group
1 of 14
2003-Oct-01
Smart Highside Power Switch
Features
Overload protection
Current limitation
Short-circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
1)
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of V
bb
protection
2)
Electrostatic discharge (ESD) protection
Application
C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS
chip on chip technology. Providing embedded protective functions.
+ Vbb
IN
ST
Signal GND
ESD
PROFET
OUT
GND
Logic
Voltage
sensor
Voltage
source
Open load
detection
Short circuit
detection
Charge pump
Level shifter
Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
3
5
Load GND
Load
V
Logic
Overvoltage
protection
Rbb
1)
No external components required, reverse load current limited by connected load.
2)
Additional external diode required for charged inductive loads
Product Summary
Overvoltage protection
V
bb(AZ)
63
V
Operating voltage
V
bb(on)
4.5 ... 42 V
On-state resistance
R
ON
18 m
Load current (ISO)
I
L(ISO)
21
A
Current limitation
I
L(SCr)
70
A
TO-220AB/5
5
Standard
1
5
Straight leads
1
5
SMD
BTS 442 E2
Semiconductor Group
2
2003-Oct-01
Pin Symbol
Function
1 GND
-
Logic
ground
2
IN
I
Input, activates the power switch in case of logical high signal
3 Vbb
+
Positive power supply voltage,
the tab is shorted to this pin
4
ST
S
Diagnostic feedback, low on failure
5 OUT
(Load, L)
O
Output to the load
Maximum Ratings at T
j
= 25 C unless otherwise specified
Parameter Symbol
Values
Unit
Supply voltage (overvoltage protection see page 3)
V
bb
63
V
Load dump protection V
LoadDump
= U
A
+ V
s
, U
A
= 13.5 V
R
I
= 2
, R
L
= 1.1
, t
d
= 200 ms, IN= low or high
V
Load dump
3
)
80
V
Load current (Short-circuit current, see page 4)
I
L
self-limited
A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
C
Power dissipation (DC)
P
tot
167
W
Inductive load switch-off energy dissipation,
single pulse
T
j
=150 C:
E
AS
2.1
J
Electrostatic discharge capability (ESD)
(Human Body Model)
V
ESD
2.0
kV
Input voltage (DC)
V
IN
-0.5 ... +6
V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6...
I
IN
I
ST
5.0
5.0
mA
Thermal resistance
chip - case:
junction - ambient (free air):
R
thJC
R
thJA
0.75
75
K/W
SMD version, device on pcb
4)
:
tbd
3)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4
) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
m thick) copper area for Vbb
connection. PCB is vertical without blown air.
BTS 442 E2
Semiconductor Group
3
2003-Oct-01
Electrical Characteristics
Parameter and Conditions Symbol
Values
Unit
at T
j
= 25 C, V
bb
= 12 V unless otherwise specified
min typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
L
= 5 A
T
j
=25 C:
T
j
=150 C:
R
ON
--
15
28
18
35
m
Nominal load current (pin 3 to 5)
ISO Proposal: V
ON
= 0.5 V, T
C
= 85 C
I
L(ISO)
17
21
--
A
Output current (pin
5
) while GND disconnected or
GND pulled up, V
IN
= 0, see diagram page 7,
T
j
=-40...+150C
I
L(GNDhigh)
-- -- 1
mA
Turn-on time
to 90% V
OUT
:
Turn-off time
to 10% V
OUT
:
R
L
= 12
,
T
j
=-40...+150C
t
on
t
off
100
10
--
--
350
130
s
Slew rate on
10 to 30% V
OUT
,
R
L
= 12
,
T
j
=-40...+150C
dV /dt
on
0.2 -- 2
V/
s
Slew rate off
70 to 40% V
OUT
, R
L
= 12
,
T
j
=-40...+150C
-dV/dt
off
0.4 -- 5
V/
s
Operating Parameters
Operating voltage
5
)
T
j
=-40...+150C: V
bb(on)
4.5
--
42
V
Undervoltage shutdown
T
j
=-40...+150C: V
bb(under)
2.4 --
4.5
V
Undervoltage restart
T
j
=-40...+150C: V
bb(u rst)
--
--
4.5
V
Undervoltage restart of charge pump
see diagram page 12
T
j
=-40...+150C:
V
bb(ucp)
-- 6.5 7.5
V
Undervoltage hysteresis
V
bb(under)
= V
bb(u rst)
- V
bb(under)
V
bb(under)
-- 0.2 --
V
Overvoltage shutdown
T
j
=-40...+150C: V
bb(over)
42
--
52
V
Overvoltage restart
T
j
=-40...+150C: V
bb(o rst)
42 -- --
V
Overvoltage hysteresis
T
j
=-40...+150C:
V
bb(over)
-- 0.2 --
V
Overvoltage protection
6
)
T
j
=-40C:
I
bb
=40 mA
T
j
=25...+150C:
V
bb(AZ)
60
63
--
67
--
V
Standby current (pin 3)
T
j
=-40...+25C
:
V
IN
=0
T
j
=150C:
I
bb(off)
--
--
12
18
25
60
A
Leakage output current (included in I
bb(off)
)
V
IN
=0
I
L(off)
-- 6 --
A
Operating current (Pin 1)
7)
, V
IN
=5 V
I
GND
-- 1.1 --
mA
5
) At supply voltage increase up to V
bb
= 6.5 V typ without charge pump, V
OUT
V
bb
- 2 V
6)
see also V
ON(CL)
in table of protection functions and circuit diagram page 7. Meassured without load
.
7
)
Add I
ST
, if I
ST
> 0, add I
IN
, if V
IN
>5.5 V
BTS 442 E2
Parameter and Conditions Symbol
Values
Unit
at T
j
= 25 C, V
bb
= 12 V unless otherwise specified
min typ
max
Semiconductor Group
4
2003-Oct-01
Protection Functions
8)
Initial peak short circuit current limit (pin 3 to 5)
9
)
,
(
max 400
s if V
ON
> V
ON(SC)
)
I
L(SCp)
T
j
=-40C:
T
j
=25C:
T
j
=+150C:
--
--
45
--
95
--
140
--
--
A
Repetitive short circuit current limit
I
L(SCr)
T
j
= T
jt
(see timing diagrams, page 10)
30
70
--
A
Short circuit shutdown delay after input pos. slope
V
ON
> V
ON(SC)
,
T
j
=-40..+150C:
min value valid only, if input "low" time exceeds 30
s
t
d(SC)
80
-- 400
s
Output clamp (inductive load switch off)
at V
OUT
= V
bb
- V
ON(CL),
I
L
= 30 mA
V
ON(CL)
--
58 --
V
Short circuit shutdown detection voltage
(pin 3 to 5)
V
ON(SC)
--
8.3
--
V
Thermal overload trip temperature
T
jt
150 -- --
C
Thermal hysteresis
T
jt
-- 10 --
K
Inductive load switch-off energy dissipation
10)
,
T
j Start
= 150 C, single pulse
V
bb
= 12 V:
V
bb
= 24 V:
E
AS
E
Load12
E
Load24
-- --
2.1
1.7
1.2
J
Reverse battery (pin 3 to 1)
11
)
-V
bb
--
--
32
V
Integrated resistor in V
bb
line
R
bb
--
120
--
Diagnostic Characteristics
Open load detection current
T
j
=-40 C
:
(on-condition)
T
j
=25..150C:
I
L (OL)
2
2
--
--
1900
1500
mA
8
) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
9
) Short circuit current limit for max. duration of t
d(SC) max
=400
s, prior to shutdown
10)
While demagnetizing load inductance, dissipated energy in PROFET is E
AS
=
V
ON(CL)
* i
L
(t) dt, approx.
E
AS
=
1
/
2
* L * I
2
L
* (
V
ON(CL)
V
ON(CL)
- V
bb
), see diagram page 8
11
) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current I
GND
of
0.3 A at V
bb
= -32 V through the logic heats up the device. Time allowed under
these condition is dependent on the size of the heatsink. Reverse I
GND
can be reduced by an additional
external GND-resistor (150
). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
BTS 442 E2
Parameter and Conditions Symbol
Values
Unit
at T
j
= 25 C, V
bb
= 12 V unless otherwise specified
min typ
max
Semiconductor Group
5
2003-Oct-01
Input and Status Feedback
12
)
Input turn-on threshold voltage
T
j
=-40..+150C:
V
IN(T+)
1.5 --
2.4
V
Input turn-off threshold voltage
T
j
=-40..+150C:
V
IN(T-)
1.0 -- --
V
Input threshold hysteresis
V
IN(T)
-- 0.5 --
V
Off state input current (pin 2), V
IN
= 0.4 V
I
IN(off)
1
--
30
A
On state input current (pin 2), V
IN
= 3.5 V
I
IN(on)
10 25 50
A
Status invalid after positive input slope
(short circuit)
Tj=-40 ... +150C:
t
d(ST SC)
80 200 400
s
Status invalid after positive input slope
(open load)
Tj=-40 ... +150C:
t
d(ST)
350 --
1600
s
Status output (open drain)
Zener limit voltage T
j
=-40...+150C, I
ST
= +1.6 mA:
ST low voltage T
j
=-40...+150C, I
ST
= +1.6 mA:
V
ST(high)
V
ST(low)
5.4
--
6.1
--
--
0.4
V
12)
If a ground resistor R
GND
is used, add the voltage drop across this resistor.
BTS 442 E2
Semiconductor Group
6
2003-Oct-01
Truth Table
Input- Output Status
level
level
442
D2
442
E2
Normal
operation
L
H
L
H
H
H
H
H
Open load
L
H
13)
H
H
L
H
L
Short circuit
to GND
L
H
L
L
H
L
H
L
Short circuit
to V
bb
L
H
H
H
H
H (L
14)
)
H
H (L
14)
)
Overtem-
perature
L
H
L
L
L
L
L
L
Under-
voltage
L
H
L
L
L
15)
L
15)
H
H
Overvoltage L
H
L
L
L
L
H
H
L = "Low" Level
H = "High" Level
13
) Power Transistor off, high impedance
14
) Low resistance short V
bb
to output may be detected by no-load-detection
15
) No current sink capability during undervoltage shutdown
Terms
PROFET
V
IN
ST
OUT
GND
bb
VST
V
IN
I ST
I IN
V
bb
Ibb
I L
VOUT
IGND
VON
1
2
4
3
5
R
GND
Input circuit (ESD protection)
IN
GND
I
R
ZD
ZD
I
I
I1
I2
ESD-
ZD
I1
6.1 V typ., ESD zener diodes are not to be used
as voltage clamp at DC conditions. Operation in this
mode may result in a drift of the zener voltage
(increase of up to 1 V).
BTS 442 E2
Semiconductor Group
7
2003-Oct-01
Status output
ST
GND
ESD-
ZD
+5V
R
ST(ON)
ESD-Zener diode: 6.1 V typ., max 5 mA;
R
ST(ON)
< 250
at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
Short Circuit detection
Fault Condition: V
ON
> 8.3 V typ.; IN high
Short circuit
detection
Logic
unit
+ Vbb
OUT
V
ON
Inductive and overvoltage output clamp
+ Vbb
OUT
GND
V
Z
V
ON
V
ON
clamped to 58 V typ.
Overvolt. and reverse batt. protection
+ Vbb
V
OUT
IN
ST
bb
R
Signal GND
Logic
PROFET
V
Z
R
GND
GND
IN
R
ST
R
R
bb
= 120
typ
.
, V
Z
+R
bb
*40 mA = 67 V typ., add
R
GND
, R
IN
, R
ST
for extended protection
Open-load detection
ON-state diagnostic condition: V
ON
< R
ON
* I
L(OL)
; IN
high
Open load
detection
Logic
unit
+ Vbb
OUT
ON
V
ON
GND disconnect
PROFET
V
IN
ST
OUT
GND
bb
V
bb
1
2
4
3
5
V
IN
V
ST
V
GND
Any kind of load. In case of Input=high is V
OUT
V
IN
- V
IN(T+)
.
Due to V
GND
>0, no V
ST
= low signal available.
BTS 442 E2
Semiconductor Group
8
2003-Oct-01
GND disconnect with GND pull up
PROFET
V
IN
ST
OUT
GND
bb
V
bb
1
2
4
3
5
V
GND
V
IN
V
ST
Any kind of load. If V
GND >
V
IN
- V
IN(T+)
device stays off
Due to V
GND
>0, no V
ST
= low signal available.
V
bb
disconnect with charged inductive
load
PROFET
V
IN
ST
OUT
GND
bb
V
bb
1
2
4
3
5
high
PROFET
V
IN
ST
OUT
GND
bb
V
bb
1
2
4
3
5
high
Inductive Load switch-off energy
dissipation
PROFET
V
IN
ST
OUT
GND
bb
=
E
E
E
EAS
bb
L
R
ELoad
Energy dissipated in PROFET E
AS
= E
bb
+ E
L
- E
R
.
E
Load
< E
L
, E
L
=
1/2
* L * I
2
L
BTS 442 E2
Semiconductor Group
9
2003-Oct-01
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection , protection against loss of ground
Type
BTS 442D2 442E2
Logic version
D
E
Overtemperature protection
Tj >150 C, latch function
16)17)
Tj >150 C, with auto-restart on cooling
X
X
Short-circuit to GND protection
switches off when V
ON
>8.3 V typ.
16)
(when first turned on after approx. 200
s)
X
X
Open load detection
in OFF-state with sensing current 30
A typ.
in ON-state with sensing voltage drop across
power transistor
X
X
Undervoltage shutdown with auto restart
X
X
Overvoltage shutdown with auto restart
X
X
Status feedback for
overtemperature
short circuit to GND
short to V
bb
open load
undervoltage
overvoltage
X
X
-
18)
X
X
X
X
X
-
18)
X
-
-
Status output type
CMOS
Open drain
X
X
Output negative voltage transient limit
(fast inductive load switch off)
to V
bb
- V
ON(CL)
X
X
Load current limit
high level
(can handle loads with high inrush currents)
medium level
low level
(better protection of application)
X
X
16
) Latch except when V
bb
-V
OUT
< V
ON(SC)
after shutdown. In most cases V
OUT
= 0 V after shutdown (V
OUT
0 V only if forced externally). So the device remains latched unless V
bb
< V
ON(SC)
(see page 4). No latch
between turn on and t
d(SC)
.
17)
With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
18
) Low resistance short V
bb
to output may be detected by no-load-detection
BTS 442 E2
Semiconductor Group
10
2003-Oct-01
Timing diagrams
Figure 1a: V
bb
turn on:
IN
V
OUT
t
V
bb
ST open drain
A
A
t d(bb IN)
in case of too early VIN=high the device may not turn on (curve A)
t
d(bb IN)
approx. 150
s
Figure 2a: Switching a lamp,
IN
ST
OUT
L
t
V
I
Figure 2b: Switching an inductive load
IN
ST
L
t
V
I
*)
OUT
t
d(ST)
I
L(OL)
*) if the time constant of load is too large, open-load-status may
occur
Figure 3a: Turn on into short circuit,
IN
ST
OUT
L
t
V
I
td(SC)
td(SC) approx. 200
s if V
bb
- V
OUT
> 8.3 V typ.
BTS 442 E2
Semiconductor Group
11
2003-Oct-01
Figure 3b: Turn on into overload,
IN
ST
L
t
I
L(SCr)
I
IL(SCp)
Heating up may require several milliseconds,
V
bb
- V
OUT
< 8.3 V typ.
Figure 3c: Short circuit while on:
IN
ST
OUT
L
t
V
I
**)
**) current peak approx. 20
s
Figure 4a: Overtemperature:
Reset if T
j
<T
jt
IN
ST
OUT
J
t
V
T
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
IN
ST
OUT
L
t
V
I
open
t
d(ST)
BTS 442 E2
Semiconductor Group
12
2003-Oct-01
Figure 5b: Open load: detection in ON-state, open
load occurs in on-state
IN
ST
OUT
L
t
V
I
open
normal
normal
t
d(ST OL1)
t
d(ST OL2)
t
d(ST OL1)
= tbd
s typ., t
d(ST OL2)
= tbd
s typ
Figure 6a: Undervoltage:
IN
V
OUT
t
V
bb
ST open drain
V
V
bb(under)
bb(u rst)
bb(u cp)
V
Figure 6b: Undervoltage restart of charge pump
V
ON
[V]
bb(under)
V
V
bb(u rst)
V
bb(over)
V
bb(o rst)
V
bb(u cp)
off
on
off
V
ON(CL)
V
bb
V
on
V
bb
[V]
charge pump starts at V
bb(ucp)
=6.5 V typ.
Figure 7a: Overvoltage:
IN
V
OUT
t
V
bb
ST
ON(CL)
V
V
bb(over)
V
bb(o rst)
BTS 442 E2
Semiconductor Group
13
2003-Oct-01
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/5
Ordering
code
BTS 442 E2
Q67060-S6206-A2
TO-220AB/5, Option E3043
Ordering code
BTS 442 E2 E3043
Q67060-S6206-A3
SMD TO-220AB/5, Opt. E3062
Ordering code
BTS442E2 E3062A
T&R: Q67060-S6206-A4
BTS 442 E2
Semiconductor Group
14
2003-Oct-01
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 Mnchen
Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-
support devices or systems with the express written approval
of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-
support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
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