PROFET BTS 640 S2
Semiconductor Group
Page 1 of 15
2003-Oct-01
Smart Sense High-Side
Power Switch
Features
Short circuit protection
Current limitation
Proportional load current sense
CMOS compatible input
Open drain diagnostic output
Fast demagnetization of inductive loads
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Overload protection
Thermal shutdown
Overvoltage protection including load dump (with
external GND-resistor)
Reverse battery protection (with external GND-resistor)
Loss of ground and loss of V
bb
protection
Electrostatic discharge (ESD) protection
Application
C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS
technology.
Providing embedded protective functions.
Block Diagram
IN
ST
ESD
Logic
Voltage
sensor
Voltage
source
Charge pump
Level shifter
Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
3
1
Signal GND
GND
2
V
Logic
Overvoltage
protection
+ Vbb
PROFET
OUT
4
6, 7
Load GND
Load
GND
RO
Current
Sense
Output
Voltage
detection
R
IS
IS
5
I
IS
I
L
Product Summary
Operating voltage
V
bb(on)
5.0 ... 34
V
On-state resistance
R
ON
30 m
Load current (ISO)
I
L(ISO)
12.6
A
Current limitation
I
L(SCr)
24
A
Package
TO220-7-11 TO263-7-2 TO220-7-12
1 1 1
Standard (staggered) SMD Straight
BTS 640 S2
Semiconductor Group
Page 2
2003-Oct-01
Pin Symbol Function
1 ST
Diagnostic feedback: open drain, invers to input level
2 GND Logic
ground
3
IN
Input, activates the power switch in case of logical high signal
4 Vbb
Positive power supply voltage, the tab is shorted to this pin
5 IS
Sense current output, proportional to the load current, zero in
the case of current limitation of load current
6 & 7
OUT
(Load, L)
Output, protected high-side power output to the load.
Both output pins have to be connected in parallel for operation
according this spec (e.g. k
ILIS
).
Design the wiring for the max. short circuit current
Maximum Ratings at T
j
= 25 C unless otherwise specified
Parameter Symbol
Values
Unit
Supply voltage
(overvoltage protection see page 4)
V
bb
43
V
Supply voltage for full short circuit protection
Tj Start=-40 ...+150C
V
bb
34
V
Load dump protection
1
)
VLoadDump = VA + Vs, VA = 13.5V
RI2)= 2
, RL= 1
, td= 200 ms, IN= low or high
V
Load dump
3
)
60
V
Load current
(Short circuit current, see page 5)
I
L
self-limited
A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
C
Power dissipation
(DC), TC
25 C
P
tot
85
W
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150C, TC = 150C const.
I
L
=
12.6
A, Z
L
=
4,2
mH, 0
:
I
L
=
4
A, Z
L
=
330
mH, 0
:
E
AS
E
AS
0,41
3,5
J
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
ST,
IS:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5k
; C=100pF
V
ESD
1.0
4.0
8.0
kV
Input voltage
(DC)
V
IN
-10 ... +16
V
Current through input pin
(DC)
Current through status pin
(DC)
Current through current sense pin
(DC)
see internal circuit diagrams page 8
I
IN
I
ST
I
IS
2.0
5.0
14
mA
1
) Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins (a 150
resistor in the GND connection is recommended).
2)
R
I
= internal resistance of the load dump test pulse generator
3)
V
Load dump
is setup without the DUT connected to the generator according to ISO 7637-1 and DIN 40839
BTS 640 S2
Semiconductor Group
Page 3
2003-Oct-01
Thermal Characteristics
Parameter and Conditions Symbol
Values
Unit
min typ
max
Thermal resistance
chip - case
:
R
thJC
-- --
1.47
K/W
junction - ambient (free air):
R
thJA
-- --
75
SMD version, device on PCB
4)
:
-- 33 --
4
) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
m thick) copper area for Vbb
connection. PCB is vertical without blown air.
Electrical Characteristics
Parameter and Conditions Symbol
Values
Unit
at T
j
= 25 C, V
bb
= 12 V unless otherwise specified
min typ
max
Load Switching Capabilities and Characteristics
On-state resistance
(pin 4 to 6&7)
IL = 5 A
T
j
=25 C:
T
j
=150 C:
R
ON
--
27
54
30
60
m
Output voltage drop limitation at small load
currents
(pin 4 to 6&7), see page 14
IL = 0.5 A
Tj =-40...+150C:
V
ON(NL)
--
50 --
mV
Nominal load current, ISO Norm
(pin 4 to 6&7)
VON = 0.5 V, TC = 85 C
I
L(ISO)
11.4
12.6 --
A
Nominal load current, device on PCB
4)
TA = 85 C, Tj
150 C VON
0.5 V,
I
L(NOM)
4.0
4.5 --
A
Output current (pin 6&7) while GND disconnected
or GND pulled up,
Vbb=30 V, VIN= 0, see diagram page
9; not subject to production test, specified by design
I
L(GNDhigh)
-- -- 8
mA
Turn-on time
IN
to 90% VOUT:
Turn-off time
IN
to 10% VOUT:
RL = 12
, Tj =-40...+150C
t
on
t
off
25
25
70
80
150
200
s
Slew rate on
10 to 30% VOUT, RL = 12
, Tj =-40...+150C
dV /dt
on
0.1 -- 1
V/
s
Slew rate off
70 to 40% VOUT, RL = 12
, Tj =-40...+150C
-dV/dt
off
0.1 -- 1
V/
s
BTS 640 S2
Parameter and Conditions Symbol
Values
Unit
at T
j
= 25 C, V
bb
= 12 V unless otherwise specified
min typ
max
Semiconductor Group
Page 4
2003-Oct-01
Operating Parameters
Operating voltage
5
)
Tj =-40...+150C:
V
bb(on)
5.0
--
34
V
Undervoltage shutdown
Tj =-40...+150C:
V
bb(under)
3.2 --
5.0
V
Undervoltage restart
Tj =-40...+25C:
Tj =+150C:
V
bb(u rst)
-- 4.5 5.5
6.0
V
Undervoltage restart of charge pump
see diagram page 13
Tj =-40...+25C:
Tj =25...150C:
V
bb(ucp)
--
--
4.7
--
6.5
7.0
V
Undervoltage hysteresis
Vbb(under) = Vbb(u rst) - Vbb(under)
V
bb(under)
-- 0.5 --
V
Overvoltage shutdown
Tj =-40...+150C:
V
bb(over)
34
--
43
V
Overvoltage restart
Tj =-40...+150C:
V
bb(o rst)
33 -- --
V
Overvoltage hysteresis
Tj =-40...+150C:
V
bb(over)
-- 1 --
V
Overvoltage protection
6
)
Tj =-40C:
Ibb=40 mA
Tj =+25...+150C
V
bb(AZ)
41
43
--
47
--
52
V
Standby current (pin 4)
VIN=0
T
j
=-40...+25C
:
T
j
= 150C:
I
bb(off)
--
--
4
12
15
25
A
Off state output current (included in I
bb(off)
)
VIN=0,
Tj =-40...+150C:
I
L(off)
-- --
10
A
Operating current
(Pin 2)7), VIN=5 V
I
GND
-- 1.2 3
mA
5
) At supply voltage increase up to V
bb
= 4.7 V typ without charge pump, V
OUT
V
bb
- 2 V
6)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins (a 150
resistor in the GND connection is recommended). See also V
ON(CL)
in table of protection functions and
circuit diagram page 9.
7
)
Add I
ST
, if I
ST
> 0, add I
IN
, if V
IN
>5.5 V
BTS 640 S2
Parameter and Conditions Symbol
Values
Unit
at T
j
= 25 C, V
bb
= 12 V unless otherwise specified
min typ
max
Semiconductor Group
Page 5
2003-Oct-01
Protection Functions
8)
Initial peak short circuit current limit
(pin 4 to 6&7)
I
L(SCp)
T
j
=-40C:
T
j
=25C:
T
j
=+150C:
48
40
31
56
50
37
65
58
45
A
Repetitive short circuit shutdown current limit
I
L(SCr)
Tj = Tjt
(see timing diagrams, page 12)
--
24
--
A
Output clamp
(inductive load switch off)
at VOUT = Vbb - VON(CL); IL= 40 mA,
T
j
=-40C:
T
j
=+25..+150C:
V
ON(CL)
41
43
--
47
--
52
V
Thermal overload trip temperature
T
jt
150 -- --
C
Thermal hysteresis
T
jt
-- 10 --
K
Reverse battery
(pin 4 to 2)
9
)
-V
bb
--
--
32
V
Reverse battery voltage drop
(Vout > Vbb)
IL = -5 A
Tj=150 C:
-V
ON(rev)
--
600 --
mV
Diagnostic Characteristics
Current sense ratio
10)
, static on-condition,
VIS = 0...5 V, Vbb(on) = 6.511)...27V,
kILIS = IL / IIS
T
j
= -40C, I
L
= 5 A:
k
ILIS
4550
5000
6000
T
j
= -40C, I
L
= 0.5 A:
3300 5000
8000
T
j
= 25...+150C, I
L
= 5 A:
,
T
j
= 25...+150C, I
L
= 0.5 A:
4550
4000
5000
5000
5550
6500
Current sense output voltage limitation
Tj = -40 ...+150C
IIS = 0, IL = 5 A:
V
IS(lim)
5.4
6.1
6.9
V
Current sense leakage/offset current
Tj = -40 ...+150C
VIN=0, VIS = 0, IL = 0:
I
IS(LL)
0
--
1
A
VIN=5 V, VIS = 0, IL = 0:
I
IS(LH)
0 --
15
VIN=5 V, VIS = 0, VOUT = 0
(short circuit):
I
IS(SH)
12 )
0 --
10
8)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
9
) Requires
150
resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 9).
10)
This range for the current sense ratio refers to all devices. The accuracy of the k
ILIS
can be raised at least by
a factor of two by matching the value of k
ILIS
for every single device.
In the case of current limitation the sense current I
IS
is zero and the diagnostic feedback potential
V
ST
is
High. See figure 2b, page 11.
11)
Valid if
V
bb(u rst)
was exceeded before.
12)
not subject to production test, specified by design
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