PROFET Data Sheet BTS660P
Infineon Technologies AG Page 1 2003-Oct-01
Smart Highside High Current Power Switch
Reversave
Reverse battery protection by self turn on of
power MOSFET
Features
Overload protection
Current limitation
Short circuit protection
Over temperature protection
Over voltage protection (including load dump)
Clamp of negative voltage at output
Fast deenergizing of inductive loads
1
)
Low ohmic inverse current operation
Diagnostic feedback with load current sense
Open load detection via current sense
Loss of V
bb
protection
2
)
Electrostatic discharge (ESD) protection
Application
Power switch with current sense diagnostic
feedback for up to 48
V DC grounded loads
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS
chip on chip technology. Providing embedded protective functions.
IN
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
3
Overvoltage
protection
+ Vbb
PROFET
OUT
4 & Tab
1,2,6,7
Load GND
Load
Output
Voltage
detection
R
IS
IS
5
I
IS
I
L
V
IS
I
IN
Logic GND
Voltage
sensor
Voltage
source
Current
Sense
Logic
ESD
Temperature
sensor
R bb
V
IN
1
)
With additional external diode.
2
)
Additional external diode required for energized inductive loads (see page 9).
Product Summary
Overvoltage protection
V
bb(AZ)
70
V
Output clamp
V
ON(CL)
62
V
Operating voltage
V
bb(on)
5.0
...
58
V
On-state resistance
R
ON
9
m
Load current (ISO)
I
L(ISO)
44
A
Short circuit current limitation
I
L(SC)
90
A
Current sense ratio
I
L :
I
IS
13 000
TO 220-7SMD
1
7
Standard
1
7
SMD
Data Sheet BTS660P
Infineon Technologies AG Page 2 2003-Oct-01
Pin Symbol
Function
1 OUT
O
Output to the load. The pins
1,2,6 and 7 must be shorted with each other
especially in high current applications!
3
)
2
OUT
O
Output to the load. The pins
1,2,6 and 7 must be shorted with each other
especially in high current applications!
3)
3
IN
I
Input, activates the power switch in case of short to ground
4 Vbb
+
Positive power supply voltage, the tab is electrically connected to this pin.
In high current applications the tab should be used for the V
bb
connection
instead of this pin
4
)
.
5 IS
S
Diagnostic feedback providing a sense current proportional to the load
current; zero current on failure (see Truth Table on page 7)
6 OUT
O
Output to the load. The pins
1,2,6 and 7 must be shorted with each other
especially in high current applications!
3)
7 OUT
O
Output to the load. The pins
1,2,6 and 7 must be shorted with each other
especially in high current applications!
3)
Maximum Ratings at T
j
= 25 C unless otherwise specified
Parameter Symbol
Values
Unit
Supply voltage
(over voltage protection see page 4)
V
bb
62
V
Supply voltage for full short circuit protection,
(E
AS
limitation see diagram on page 10)
T
j,start
=-40 ...+150C:
V
bb
58
V
Load current (short circuit current, see page 5)
I
L
self-limited
A
Load dump protection V
LoadDump
=
U
A
+
V
s
, U
A
=
13.5
V
R
I
5
)
=
2
, R
L
=
0.23
, t
d
=
200
ms,
IN,
IS
= open or grounded
V
Load dump
6
)
80
V
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
C
Power dissipation (DC), T
C
25 C
P
tot
170
W
Inductive load switch-off energy dissipation, single pulse
V
bb
=
12V, T
j,start
=
150C, T
C
=
150C const.,
I
L
=
20
A, Z
L
=
6
mH, 0
,
see diagrams on page 10
E
AS
1.2
J
Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 k
V
ESD
4.0
kV
Current through input pin (DC)
Current through current sense status pin (DC)
see internal circuit diagrams on page 7 and 8
I
IN
I
IS
+15
, -250
+15
, -250
mA
3
)
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current
capability and decrease the current sense accuracy
4
)
Otherwise add up to 0.7 m
(depending on used length of the pin) to the R
ON
if the pin is used instead of
the tab.
5
)
R
I
= internal resistance of the load dump test pulse generator.
6
)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
Data Sheet BTS660P
Infineon Technologies AG Page 3 2003-Oct-01
Thermal Characteristics
Parameter and Conditions
Symbol
Values
Unit
min typ
max
Thermal resistance
chip - case
:
R
thJC
7
)
-- --
0.75
K/W
junction - ambient (free air):
R
thJA
--
60 --
SMD version, device on PCB
8
)
:
--
33
--
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at T
j
=
-40 ... +150
C, V
bb
=
24
V unless otherwise specified
min typ
max
Load Switching Capabilities and Characteristics
On-state resistance
(Tab to pins 1,2,6,7, see
measurement circuit page 7)
I
L
=
20
A, T
j
=
25
C:
V
IN
=
0, I
L
=
20
A
,
T
j
=
150
C:
R
ON
--
7.2
14.6
9
17
m
I
L
=
80
A
,
T
j
=
150
C:
--
17
V
bb
=6V, I
L
=20A, T
j
=150C: R
ON(Static)
17 22
Nominal load current
9
)
(Tab to pins 1,2,6,7)
ISO 10483-1/6.7: V
ON
=
0.5
V, Tc =
85
C
10
)
I
L(ISO)
38
44
--
A
Nominal load current
9)
, device on PCB
8)
T
A
= 85 C, T
j
150 C V
ON
0.5 V,
I
L(NOM)
9.9
11.1 --
A
Maximum load current in resistive range
(Tab to pins 1,2,6,7)
V
ON
=
1.8
V, Tc =
25
C:
see diagram on page 13
V
ON
=
1.8
V, Tc =
150
C:
I
L(Max)
185
105
--
--
--
--
A
Turn-on time
11
)
IIN
to 90% V
OUT
:
Turn-off time
IIN
to 10% V
OUT
:
R
L
=
1
,
T
j
=-40...+150C
t
on
t
off
50
30
--
--
400
110
s
Slew rate on
11)
(10 to 30% V
OUT
)
R
L
=
1
dV/dt
on
1.0 1.5 2.2
V/
s
Slew rate off
11)
(70 to 40% V
OUT
)
R
L
=
1
-dV/dt
off
1.1 1.9 2.6
V/
s
7
)
Thermal resistance R
thCH
case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
8
) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
m thick) copper area for Vbb
connection. PCB is vertical without blown air.
9
)
not subject to production test, specified by design
10
)
T
J
is about 105C under these conditions.
11
) See timing diagram on page 14.
Data Sheet BTS660P
Infineon Technologies AG Page 4 2003-Oct-01
Parameter and Conditions
Symbol
Values
Unit
at T
j
=
-40 ... +150
C, V
bb
=
24
V unless otherwise specified
min typ
max
Inverse Load Current Operation
On-state resistance
(Pins 1,2,6,7 to pin 4)
V
bIN
=
12 V, I
L
=
-
20
A
T
j
=
25
C:
see diagram on page 10
T
j
=
150
C:
R
ON(inv)
--
7.2
14.6
9
17
m
Nominal inverse load current
(Pins 1,2,6,7 to Tab)
V
ON
=
-0.5
V, Tc =
85
C
I
L(inv)
50
60
--
A
Drain-source diode voltage
(V
out
> V
bb
)
I
L
=
-
20
A, I
IN
= 0, T
j
=
+150C
-V
ON
-- 0.6 0.7
mV
Operating Parameters
Operating voltage (V
IN
=
0)
12
)
V
bb(on)
5.0
--
58
V
Under voltage shutdown
13
)
14
)
V
bIN(u)
1.5 3.0 4.5
V
Under voltage start of charge pump
see diagram page
15
V
bIN(ucp)
3.0
4.5 6.0
V
Over voltage protection
15
)
T
j
=-40C:
I
bb
=
15
mA
T
j
=
25...+150C:
V
bIN(Z)
68
70
--
72
--
--
V
Standby current
T
j
=-40...+25C:
I
IN
=
0, V
bb
=35V
T
j
=
150C:
I
bb(off)
--
--
15
25
25
50
A
12
) If the device is turned on before a V
bb
-decrease, the operating voltage range is extended down to V
bIN(u)
.
For the voltage range 0..58 V the device is fully protected against overtemperature and short circuit.
13
)
not subject to production test, specified by design
14
) V
bIN
= V
bb
-
V
IN
see diagram on page 15. When V
bIN
increases from less than V
bIN(u)
up to V
bIN(ucp)
= 5
V
(typ.) the charge pump is not active and V
OUT
V
bb
-
3
V.
15
)
See also V
ON(CL)
in circuit diagram on page 9.
Data Sheet BTS660P
Parameter and Conditions
Symbol
Values
Unit
at T
j
=
-40 ... +150
C, V
bb
=
24
V unless otherwise specified
min typ
max
Infineon Technologies AG Page 5 2003-Oct-01
Protection Functions
16)
Short circuit current limit
(Tab to pins 1,2,6,7)
V
ON
=
24
V, time until shutdown max. 300
s
T
c
=-40C:
see page 8 and 13
T
c
=25C:
T
c
=+150C:
I
L(SC)
I
L(SC)
I
L(SC)
--
--
50
90
90
80
180
--
--
A
Short circuit shutdown delay after input current
positive slope, V
ON
> V
ON(SC)
17)
min. value valid only if input "off-signal" time exceeds 30
s
t
d(SC)
80
-- 350
s
Output clamp (inductive load switch off)
at V
OUT
= V
bb
- V
ON(CL)
(e.g. over voltage)
I
L
= 40 mA
V
ON(CL)
62
65 72
V
Short circuit shutdown detection voltage
17
)
(pin 4 to pins 1,2,6,7)
V
ON(SC)
--
6
--
V
Thermal overload trip temperature
T
jt
150 -- --
C
Thermal hysteresis
T
jt
-- 10 --
K
Reverse Battery
Reverse battery voltage
18
)
-V
bb
--
--
42
V
On-state resistance
(Pins 1,2,6,7 to pin 4)
T
j
=
25
C:
V
bb
=
-12V,
V
IN
=
0,
I
L
=
-
20
A,
R
IS
=
1
k
T
j
=
150
C:
R
ON(rev)
--
8.8
--
10.5
20
m
Integrated resistor in V
bb
line T
j
=
25
C:
T
j
=150C:
R
bb
90
105
120
125
135
150
16
) Integrated protection functions are designed to prevent IC destruction under fault conditions described in
the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions
are not designed for continuous repetitive operation.
17
)
not subject to production test, specified by design
18
) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load
(as it is done with all polarity symmetric loads). Note that under off-conditions (I
IN
=
I
IS
=
0) the power
transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the
intrinsic drain-source diode. The temperature protection is not active during reverse current operation! To
reduce the power dissipation at the integrated R
bb
resistor an input resistor is recommended as described
on page 9.
Data Sheet BTS660P
Parameter and Conditions
Symbol
Values
Unit
at T
j
=
-40 ... +150
C, V
bb
=
24
V unless otherwise specified
min typ
max
Infineon Technologies AG Page 6 2003-Oct-01
Diagnostic Characteristics
Current sense ratio,
I
L
=
80
A,T
j
=-40C:
static on-condition,
T
j
=25C:
k
ILIS
=
I
L
:
I
IS
,
T
j
=150C:
V
ON
<
1.5
V
19
)
,
I
L
=
20
A,T
j
=-40C:
V
IS
<V
OUT
-
5 v,
T
j
=25C:
V
bIN
>
4.0
V
T
j
=150C:
see diagram on page 12
I
L
=
10
A,T
j
=-40C:
T
j
=25C:
T
j
=150C:
I
L
=
4
A,T
j
=-40C:
T
j
=25C:
T
j
=150C:
k
ILIS
11 400
11 400
11 000
11 000
11 000
11 000
10 500
10 500
11 000
9 000
10 000
10 800
13 000
13 000
13 000
13 000
13 000
13 000
13 000
13 000
13 000
13 000
13 000
13 000
15 400
14 600
14 200
16 000
15 000
14 500
17 000
15 500
15 000
22 000
18 500
16 000
I
IN
= 0, I
IS
=0
(e.g. during deenergizing of inductive loads)
:
-- --
--
Sense current saturation
I
IS,lim
6.5 -- --
mA
Current sense leakage current
I
IN
=
0
V
IN
=
0, I
L
<
0:
I
IS(LL)
I
IS(LH)
--
--
--
2
0.5
65
A
Current sense over voltage protection
T
j
=-40C:
I
bb
=
15
mA
T
j
=
25...+150C:
V
bIS(Z)
68
70
--
72
--
--
V
Current sense settling time
20
)
t
s(IS)
-- --
500
s
Input
Input and operating current (see diagram page 13)
IN grounded (V
IN
=
0)
I
IN(on)
--
0.8 1.5
mA
Input current for turn-off
21
)
I
IN(off)
-- -- 80
A
19
)
If
V
ON
is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see
I
IS,lim
.
20
) not subject to production test, specified by design
21
) We recommend the resistance between IN and GND to be less than 0.5
k
for turn-on and more than
500
k
for turn-off. Consider that when the device is switched off (I
IN
=
0) the voltage between IN and GND
reaches almost V
bb
.
Data Sheet BTS660P
Infineon Technologies AG Page 7 2003-Oct-01
Truth Table
Input
current
Output Current
Sense
Remark
level
level IIS
Normal
operation
L
H
L
H
0
nominal
=I
L
/ k
ilis
, up to I
IS
=I
IS,lim
Very high
load current
H H I
IS, lim
up to V
ON
=V
ON(Fold back)
I
IS
no longer proportional to I
L
Current-
limitation
H H
0
V
ON
> V
ON(Fold back)
if V
ON
>V
ON(SC)
, shutdown will occure
Short circuit to
GND
L
H
L
L
0
0
Over-
temperature
L
H
L
L
0
0
Short circuit to
V
bb
L
H
H
H
0
<nominal
22
)
Open load
L
H
Z
23
)
H
0
0
Negative output
voltage clamp
L L
0
Inverse load
current
L
H
H
H
0
0
L = "Low" Level
H = "High" Level
Over temperature reset by cooling: Tj < Tjt (see diagram on page 15)
Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14)
22
) Low ohmic short to V
bb
may reduce the output current I
L
and can thus be detected via the sense current I
IS
.
23
) Power Transistor "OFF", potential defined by external impedance.
Terms
PROFET
V
IN
IS
OUT
bb
V
IN
I
IS
I
IN
V
bb
Ibb
IL
V
OUT
V
ON
3
5
4
1,2,6,7
R
IS
V
IS
V
bIN
R
IN
D
S
V
bIS
Two or more devices can easily be connected in
parallel to increase load current capability.
R
ON
measurement layout
Sense
V force
Out Force
bb
contacts
contacts
(both out
pins parallel)
l
5.5mm
Typical R
ON
for SMD version is about 0.2 m
less
than straight leads due to l
2 mm
Data Sheet BTS660P
Infineon Technologies AG Page 8 2003-Oct-01
Input circuit (ESD protection)
IN
ZD
IN
I
V bb
Rbb
V
Z,IN
V bIN
V IN
When the device is switched off (I
IN
=
0) the voltage
between IN and GND reaches almost V
bb
. Use a
bipolar or MOS transistor with appropriate breakdown
voltage as driver.
V
Z,IN
=
74
V
(typ).
Short circuit detection
Fault Condition: V
ON
> V
ON(SC)
(6
V typ.) and t> t
d(SC)
(80 ...300 s).
Short circuit
detection
Logic
unit
+ Vbb
OUT
V
ON
Current sense status output
IS
IS
R
IS
I
ZD
IS
V
bb
V
bb
R
Z,IS
V
V
Z,IS
=
74
V
(typ.), R
IS
=
1
k
nominal (or 1
k
/n, if n
devices are connected in parallel). I
S
= I
L
/k
ilis
can be
driven only by the internal circuit as long as V
out
- V
IS
>
5 V. If you want measure load currents up to I
L(M)
, R
IS
should be less than
V
bb
- 5 V
I
L(M)
/ K
ilis
.
Note: For large values of R
IS
the voltage V
IS
can reach
almost V
bb
. See also over voltage protection.
If you don't use the current sense output in your
application, you can leave it open.
Inductive and over voltage output clamp
+ V
bb
OUT
PROFET
V
Z1
V
ON
IS
V
OUT
V
ON
is clamped to V
ON(Cl)
=
62
V typ
Data Sheet BTS660P
Infineon Technologies AG Page 9 2003-Oct-01
Over voltage protection of logic part
+ V
bb
V
OUT
IN
bb
R
Signal GND
Logic
PROFET
V
Z,IS
R
IS
IN
R
IS
V
Z,IN
R
V
V
Z,VIS
R
bb
=
120
typ
.
,
V
Z,IN
= V
Z,IS
=
74
V
typ.,
R
IS
=
1
k
nominal. Note that when over voltage exceeds 79
V
typ. a voltage above 5V can occur between IS and
GND, if R
V
, V
Z,VIS
are not used.
Reverse battery protection
Logic
IS
IN
IS
R
V
R
OUT
L
R
Power GND
Signal GND
Vbb
-
Power
Transistor
IN
R
bb
R
D
S
D
R
V
1
k
,
R
IS
=
1
k
nominal. Add
R
IN
for reverse
battery protection in applications with
V
bb
above
16V
18)
;
recommended value:
1
R
IN
+
1
R
IS
+
1
R
V
=
0.1A
|V
bb
| - 12V
if D
S
is not used (or
1
R
IN
=
0.1A
|V
bb
| - 12V
if D
S
is used).
To minimize power dissipation at reverse battery
operation, the overall current into the IN and IS pin
should be about 120mA. The current can be provided
by using a small signal diode D in parallel to the input
switch, by using a MOSFET input switch or by proper
adjusting the current through R
IS
and
R
V
.
V
bb
disconnect with energized inductive
load
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (V
ZL
<
70 V or
V
Zb
<
42 V if R
IN
=0). For higher clamp voltages
currents at IN and IS have to be limited to
250 mA.
Version a:
PROFET
V
IN
OUT
IS
bb
V
bb
V
ZL
Version b:
PROFET
V
IN
OUT
IS
bb
V
bb
V
Zb
Note that there is no reverse battery protection when
using a diode without additional Z-diode V
ZL
, V
Zb
.
Version c: Sometimes a necessary voltage clamp is
given by non inductive loads R
L
connected to the
same switch and eliminates the need of clamping
circuit:
PROFET
V
IN
OUT
IS
bb
V
bb
R
L
Data Sheet BTS660P
Infineon Technologies AG Page 10 2003-Oct-01
Inverse load current operation
PROFET
V
IN
OUT
IS
bb
V
bb
V
OUT
- I
L
R
IS
V
IS
V
IN
+
-
+
-
I
IS
The device is specified for inverse load current
operation (V
OUT
> V
bb
> 0V). The current sense
feature is not available during this kind of operation (I
IS
= 0). With I
IN
= 0 (e.g. input open) only the intrinsic
drain source diode is conducting resulting in consi-
derably increased power dissipation. If the device is
switched on (V
IN
= 0), this power dissipation is
decreased to the much lower value R
ON(INV)
* I
2
(specifications see page 4).
Note: Temperature protection during inverse load
current operation is not possible!
Inductive load switch-off energy
dissipation
PROFET
V
IN
OUT
IS
bb
E
E
E
EAS
bb
L
R
ELoad
L
RL
{
Z L
RIS
I
IN
Vbb
i (t)
L
Energy stored in load inductance:
E
L
=
1/2
L
I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
=
V
ON(CL)
i
L
(t) dt,
with an approximate solution for RL
>
0
:
E
AS
=
I
L
L
2
R
L
(
V
bb
+
|V
OUT(CL)
|)
ln
(1+
I
L
R
L
|V
OUT(CL)
|
)
Maximum allowable load inductance for
a single switch off
L = f (IL );
Tj,start =
150C, Vbb =
40
V, RL =
0
L [H]
I [A]
Externally adjustable current limit
If the device is conducting, the sense current can be
used to reduce the short circuit current and allow
higher lead inductance (see diagram above). The
device will be turned off, if the threshold voltage of T2
is reached by I
S
*R
IS
. After a delay time defined by
R
V
*C
V
T1 will be reset. The device is turned on again,
the short circuit current is defined by I
L(SC)
and the
device is shut down after t
d(SC)
with latch function.
PROFET
IS
IN
IS
R
V
R
Power
GND
Signal
GND
Vbb
OUT
V
C
load
R
T1
T2
IN
Signal
Vbb
1
10
100
1000
10000
10
100
1000
Data Sheet BTS660P
Infineon Technologies AG Page 11 2003-Oct-01
Options Overview
Type BTS
660P
Over temperature protection with hysteresis
X
Tj >150 C, latch function
24
)
Tj >150 C, with auto-restart on cooling
X
Short circuit to GND protection
switches off when V
ON
>6 V typ.
(when first turned on after approx. 180
s)
X
Over voltage shutdown
-
Output negative voltage transient limit
to V
bb
- V
ON(CL)
X
to V
OUT
= -15 V typ
X
25
)
24
) Latch except when V
bb
-V
OUT
< V
ON(SC)
after shutdown. In most cases V
OUT
= 0 V after shutdown (V
OUT
0 V only if forced externally). So the device remains latched unless V
bb
< V
ON(SC)
(see page 5). No latch
between turn on and t
d(SC)
.
25
) Can be "switched off" by using a diode D
S
(see page 8) or leaving open the current sense output.
Data Sheet BTS660P
Infineon Technologies AG Page 12 2003-Oct-01
Characteristics
Current sense versus load current:
I
IS
= f(I
L
), T
J
= -40 ... +150 C
I
IS
[mA]
I
L
[A]
Current sense ratio:
K
ILIS
= f(I
L
), T
j
= -40C
k
ilis
I
L
[A]
Current sense ratio:
K
ILIS
= f(I
L
), T
j
= 25C
k
ilis
I
L
[A]
Current sense ratio:
K
ILIS
= f(I
L
), T
j
= 150C
k
ilis
I
L
[A]
0
1
2
3
4
5
6
7
0
20
40
60
80
max
min
8000
10000
12000
14000
16000
18000
20000
0
20
40
60
80
typ
max
min
8000
10000
12000
14000
16000
18000
20000
22000
24000
0
20 40
60 80
typ
min
max
10000
12000
14000
16000
18000
20000
0
20
40
60
80
min
typ
max
Data Sheet BTS660P
Infineon Technologies AG Page 13 2003-Oct-01
Typ. current limitation characteristic
I
L
= f (V
ON
, T
j
)
I
L
[A]
0
50
100
150
200
250
300
350
400
0
5
10
15
20
T
j
= -40C
25C
150C
V
ON(FB)
(Fold Back)
V
ON
>V
ON(SC)
only for t < t
d(SC)
(otherwise immediate shutdown)
V
ON
[V]
In case of V
ON
> V
ON(SC)
(typ. 6 V) the device will be
switched off by internal short circuit detection.
Typ. on-state resistance
R
ON
= f (V
bb
, T
j
)
;
I
L
= 20
A; V
IN
= 0
R
ON
[mOhm]
4
6
8
10
12
14
16
18
0
5
10
15
static
dynamic
T
j
= 150C
85C
25C
-40C
40
V
bb
[V]
Typ. input current
I
IN
= f (V
bIN
), V
bIN =
V
bb
- V
IN
I
IN
[mA]
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
V
bIN
[V]
Data Sheet BTS660P
Infineon Technologies AG Page 14 2003-Oct-01
Timing diagrams
Figure 1a:
Switching a resistive load,
change of load current in on-condition:
I
IN
t
V
OUT
I
L
I
IS
t
son(IS)
t
t
slc(IS)
Load 1
Load 2
soff(IS)
t
t
t
on
off
slc(IS)
90%
dV/dton
dV/dtoff
10%
The sense signal is not valid during a settling time
after turn-on/off and after change of load current.
Figure 2b:
Switching motors and lamps:
I
IN
t
V
OUT
I
IL
I
IS
Sense current saturation can occur at very high
inrush currents (see I
IS,lim
on page 6).
Figure 2c:
Switching an inductive load:
I
IN
t
V
OUT
I
L
I
IS
Figure 3d:
Short circuit:
shut down by short circuit detection, reset by I
IN
=
0.
I
IN
I
L
I
L(SCp)
I
IS
t
t
d(SC)
V
OUT
=0
V
OUT
>>0
Shut down remains latched until next reset via input.
Data Sheet BTS660P
Infineon Technologies AG Page 15 2003-Oct-01
Figure 4e:
Overtemperature
Reset if T
j
<T
jt
I
IN
t
I
IS
V
OUT
T
j
Auto Restart
Figure 6f:
Undervoltage restart of charge pump,
overvoltage clamp
0
2
4
6
0
4
V
OUT
V
bIN(ucp)
V
IN
= 0
I
IN
= 0
V
ON(CL)
V
bIN(u)
V
bIN(u)
dynamic, short
Undervoltage
not below
VON(CL)
Data Sheet BTS660P
Infineon Technologies AG Page 16 2003-Oct-01
Package and Ordering Code
All dimensions in mm
TO-220-7-3
Ordering
code
BTS660P Q67060-S6309
TO 220-7SMD, Opt. E3180
Ordering code
BTS660P E3180A T&R:
Q67060-S6310
Footprint:
9.4
0.47
0.8
8.42
4.6
16.15
10.8
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 Mnchen
Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-
support devices or systems with the express written approval
of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-
support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
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