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Электронный компонент: Q67060-S7405

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2004-01-27
Page 1
BTS 452 R
Smart Power High-Side-Switch
Features
Overload protection
Current limitation
Short circuit protection
Thermal shutdown with restart
Overvoltage protection
(including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
with external resistor
Open drain diagnostic output for overtemperature
and short circuit
Open load detection in OFF - State
with external resistor
CMOS compatible input
Loss of GND and loss of V
bb
protection
ESD - Protection
Very low standby current
Product Summary
Overvoltage protection
V
bb(AZ)
62
V
Operating voltage
V
bb(on)
6...52 V
On-state resistance
R
ON
200
m
Nominal load current
I
L(ISO)
1.8
A
P-TO252-5-11
Application
All types of resistive, inductive and capacitive loads
C compatible power switch for 12 V, 24 V and 42 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input
and diagnostic feedback, monolithically integrated in Smart SIPMOS
technology.
Providing embedded protective functions.
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Page 2
BTS 452 R
Block Diagram
+ Vbb
IN
Signal GND
ESD
miniPROFET
OUT
GND
Logic
Voltage
source
Charge pump
Level shifter
Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
Load GND
Load
V
Logic
Overvoltage
protection
ST
Pin
Symbol
Function
1
GND
Logic ground
2
IN
Input, activates the power switch in case of logic high signal
3
Vbb
Positive power supply voltage
4
ST
Diagnostic feedback
5
OUT
Output to the load
TAB
Vbb
Positive power supply voltage
Pin configuration
Tab = V
BB
1 2 (3) 4 5
GND IN ST OUT
Top view
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2004-01-27
Page 3
BTS 452 R
Maximum Ratings at T
j
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Supply voltage
V
bb
52
V
Supply voltage for full short circuit protection
V
bb(SC)
50
Continuous input voltage
V
IN
-10 ... +16
Load current (Short - circuit current, see page 5) I
L
self limited
A
Current through input pin (DC)
I
IN
5
mA
Operating temperature
T
j
-40 ...+150
C
Storage temperature
T
stg
-55 ... +150
Power dissipation
1)
P
tot
41.6
W
Inductive load switch-off energy dissipation
1)2)
single pulse, (see page 9)
Tj =150 C, I
L
= 1 A
E
AS
150
mJ
Load dump protection
2)
V
LoadDump
3)
= V
A
+ V
S
R
I
=2
, t
d
=400ms, V
IN
= low or high, V
A
=13,5V
R
L
= 13.5
R
L
= 27
V
Loaddump
73.5
88.5
V
Electrostatic discharge voltage
(Human Body Model)
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
Input pin
all other pins
V
ESD
1
5
kV
Thermal Characteristics
junction - case:
R
thJC
-
-
3
K/W
Thermal resistance @ min. footprint
R
th(JA)
-
80
-
K/W
Thermal resistance @ 6 cm
2
cooling area
1)
R
th(JA)
-
45
60
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain
connection. PCB is vertical without blown air. (see page 17)
2not subject to production test, specified by design
3VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a
150
resistor in GND connection. A resistor for the protection of the input is integrated.
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Page 4
BTS 452 R
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at T
j
= -40...+150C, V
bb
= 12..42V,
unless otherwise specified
min.
typ.
max.
Load Switching Capabilities and Characteristics
On-state resistance
T
j
= 25 C, I
L
= 1 A, V
bb
= 9...52 V
T
j
= 150 C
R
ON
-
-
150
270
200
380
m
Nominal load current; Device on PCB
1)
T
C
= 85 C, V
ON
= 0.5 V
I
L(ISO)
1.8
2.2
-
A
Turn-on time to 90%
V
OUT
R
L
= 47
t
on
-
80
180
s
Turn-off time to 10%
V
OUT
R
L
= 47
t
off
-
80
200
Slew rate on 10 to 30% V
OUT
,
R
L
= 47
, V
bb
= 13.5 V
dV/dt
on
-
0.7
2
V/s
Slew rate off 70 to 40% V
OUT
,
R
L
= 47
, V
bb
= 13.5 V
-dV/dt
off
-
0.9
2
Operating Parameters
Operating voltage
V
bb(on)
6
-
52
V
Undervoltage shutdown of charge pump
T
j
= -40...+85 C
T
j
= 150 C
V
bb(under)
-
-
-
-
4
5.5
Undervoltage restart of charge pump
V
bb(u cp)
-
4
5.5
Standby current
T
j
= -40...+85 C, V
IN
= low
T
j
= +150 C
2)
, V
IN
= low
I
bb(off)
-
-
-
-
15
18
A
Leakage output current (included in
I
bb(off)
)
V
IN
= low
I
L(off)
-
-
5
Operating current
V
IN
= high
I
GND
-
0.8
2
mA
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain
connection. PCB is vertical without blown air. (see page 17)
2higher current due temperature sensor
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2004-01-27
Page 5
BTS 452 R
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at T
j
= -40...+150C, V
bb
= 12..42V,
unless otherwise specified
min.
typ.
max.
Protection Functions
1)
Initial peak short circuit current limit (pin 3 to 5)
T
j
= -40 C, V
bb
= 20 V, t
m
= 150 s
T
j
= 25 C
T
j
= 150 C
T
j
= -40...+150 C, V
bb
> 40 V , ( see page 12 )
I
L(SCp)
-
-
4
-
-
6.5
-
5
2)
9
-
-
-
A
Repetitive short circuit current limit
T
j
= T
jt
(see timing diagrams)
V
bb
< 40V
V
bb
> 40V
I
L(SCr)
-
-
6
4.5
-
-
Output clamp (inductive load switch off)
at V
OUT
= V
bb
- V
ON(CL)
,
I
bb
= 4 mA
V
ON(CL)
59
63
-
V
Overvoltage protection
3)
I
bb
= 4 mA
V
bb(AZ)
62
-
-
Thermal overload trip temperature
T
jt
150
-
-
C
Thermal hysteresis
T
jt
-
10
-
K
Reverse Battery
Reverse battery
4)
-V
bb
-
-
52
V
Drain-source diode voltage (V
OUT
> V
bb
)
T
j
= 150 C
-V
ON
-
600
-
mV
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation .
2not subject to production test, specified by design
3 see also VON(CL) in circuit diagram on page 8
4Requires a 150
resistor in GND connection. The reverse load current through the intrinsic drain-source diode has
to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the
voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation!
Input current has to be limited (see max. ratings page 3).