BSC119N03S G
Opti
MOS
2 Power-Transistor
Features
Fast switching MOSFET for SMPS
Optimized technology for notebook DC/DC converters
Qualified according to JEDEC
1)
for target applications
N-channel
Logic level
Excellent gate charge x R
DS(on)
product (FOM)
Very low on-resistance R
DS(on)
Superior thermal resistance
Avalanche rated
Pb-free plating; RoHS compliant
Maximum ratings, at T
j
=25 C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 C
30
A
T
C
=100 C
30
T
A
=25 C,
R
thJA
=45 K/W
2)
11.9
Pulsed drain current
I
D,pulse
T
C
=25 C
3)
120
Avalanche energy, single pulse
E
AS
I
D
=30 A, R
GS
=25
60
mJ
Reverse diode dv /dt
dv /dt
I
D
=30 A, V
DS
=24 V,
di /dt =200 A/s,
T
j,max
=150 C
6
kV/s
Gate source voltage
V
GS
20
V
Power dissipation
P
tot
T
C
=25 C
43
W
T
A
=25 C,
R
thJA
=45 K/W
2)
2.8
Operating and storage temperature
T
j
, T
stg
-55 ... 150
C
IEC climatic category; DIN IEC 68-1
55/150/56
Value
V
DS
30
V
R
DS(on),max
11.9
m
I
D
30
A
Product Summary
Type
Package
Ordering Code
Marking
BSC119N03S G
P-TDSON-8
Q7042 S4292
119N03S
P-TDSON-8
P-TDSON-8
Rev. 1.01
page 1
2004-12-15
BSC119N03S G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
2.9
K/W
Thermal resistance,
R
thJA
minimal footprint
-
-
62
junction - ambient
6 cm
2
cooling area
2)
-
-
45
Electrical characteristics, at T
j
=25 C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=1 mA
30
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=20 A
1.2
1.6
2
Zero gate voltage drain current
I
DSS
V
DS
=30 V, V
GS
=0 V,
T
j
=25 C
-
0.1
1
A
V
DS
=30 V, V
GS
=0 V,
T
j
=125 C
-
10
100
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
-
10
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=4.5 V, I
D
=25 A
-
14.4
18
m
V
GS
=10 V, I
D
=30 A
-
9.9
11.9
Gate resistance
R
G
-
1
-
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=30 A
22
43
-
S
1)
J-STD20 and JESD22
Values
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 m thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3
Rev. 1.01
page 2
2004-12-15
BSC119N03S G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
1030
1370
pF
Output capacitance
C
oss
-
370
490
Reverse transfer capacitance
C
rss
-
50
75
Turn-on delay time
t
d(on)
-
3.8
5.8
ns
Rise time
t
r
-
3.4
5.1
Turn-off delay time
t
d(off)
-
15
23
Fall time
t
f
-
2.6
3.9
Gate Charge Characteristics
3)
Gate to source charge
Q
gs
-
3.3
4.4
nC
Gate charge at threshold
Q
g(th)
-
1.6
2.2
Gate to drain charge
Q
gd
-
2.1
3.2
Switching charge
Q
sw
-
3.8
5.4
Gate charge total
Q
g
-
8
11
Gate plateau voltage
V
plateau
-
3.2
-
V
Gate charge total, sync. FET
Q
g(sync)
V
DS
=0.1 V,
V
GS
=0 to 5 V
-
7
9
nC
Output charge
Q
oss
V
DD
=15 V, V
GS
=0 V
-
8
11
Reverse Diode
Diode continous forward current
I
S
-
-
30
A
Diode pulse current
I
S,pulse
-
-
120
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=30 A,
T
j
=25 C
-
0.93
1.2
V
Reverse recovery charge
Q
rr
V
R
=15 V, I
F
=I
S
,
di
F
/dt =400 A/s
-
-
10
nC
3)
See figure 16 for gate charge parameter definition
T
C
=25 C
Values
V
GS
=0 V, V
DS
=15 V,
f =1 MHz
V
DD
=15 V, V
GS
=10 V,
I
D
=15 A, R
G
=2.7
V
DD
=15 V, I
D
=15 A,
V
GS
=0 to 5 V
Rev. 1.01
page 3
2004-12-15
BSC119N03S G
1 Power dissipation
2 Drain current
P
tot
=f(T
C
)
I
D
=f(T
C
); V
GS
10 V
3 Safe operating area
4 Max. transient thermal impedance
I
D
=f(V
DS
); T
C
=25 C; D =0
Z
thJC
=f(t
p
)
parameter: t
p
parameter: D =t
p
/T
1 s
10 s
100 s
1 ms
10 ms
DC
10
2
10
1
10
0
10
-1
10
3
10
2
10
1
10
0
10
-1
0.1
1
10
100
1000
0.1
1
10
100
V
DS
[V]
I
D
[A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
1
10
0
10
-1
10
-2
0.01
0.1
1
10
0
0
0
0
0
0
t
p
[s]
Z
thJC
[K/W]
0
10
20
30
40
50
0
40
80
120
160
T
C
[C]
P
tot
[W]
0
10
20
30
40
0
40
80
120
160
T
C
[C]
I
D
[A]
Rev. 1.01
page 4
2004-12-15
BSC119N03S G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I
D
=f(V
DS
); T
j
=25 C
R
DS(on)
=f(I
D
); T
j
=25 C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics
8 Typ. forward transconductance
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
g
fs
=f(I
D
); T
j
=25 C
parameter: T
j
3.2 V
3.4 V
3.7 V
4 V
4.5 V
10 V
0
5
10
15
20
25
30
0
10
20
30
40
50
I
D
[A]
R
D
S
(on)
[m
]
25 C
150 C
0
10
20
30
40
50
60
70
80
0
1
2
3
4
5
V
GS
[V]
I
D
[A]
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
I
D
[A]
g
fs
[S]
2.8 V
3 V
3.2 V
3.4 V
3.7 V
4 V
4.5 V
10 V
0
10
20
30
40
50
60
70
80
0
1
2
3
V
DS
[V]
I
D
[A]
Rev. 1.01
page 5
2004-12-15
BSC119N03S G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)
=f(T
j
); I
D
=30 A; V
GS
=10 V
V
GS(th)
=f(T
j
); V
GS
=V
DS
parameter: I
D
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V
DS
); V
GS
=0 V; f =1 MHz
I
F
=f(V
SD
)
parameter: T
j
typ
98 %
0
4
8
12
16
20
-60
-20
20
60
100
140
180
T
j
[C]
R
D
S
(on)
[m
]
20 A
200 A
0
0.5
1
1.5
2
2.5
-60
-20
20
60
100
140
180
T
j
[C]
V
GS
(th)
[V]
Ciss
Coss
Crss
10
4
10
3
10
2
10
1
10
100
1000
10000
0
10
20
30
V
DS
[V]
C
[pF]
25 C
150 C
25 C, 98%
150 C, 98%
10
3
10
2
10
1
10
0
10
-1
0
0.5
1
1.5
2
V
SD
[V]
I
F
[A]
Rev. 1.01
page 6
2004-12-15
BSC119N03S G
13 Avalanche characteristics
14 Typ. gate charge
I
AS
=f(t
AV
); R
GS
=25
V
GS
=f(Q
gate
); I
D
=15 A pulsed
parameter: T
j(start)
parameter: V
DD
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)
=f(T
j
); I
D
=1 mA
6 V
15 V
24 V
0
2
4
6
8
10
12
0
4
8
12
16
Q
gate
[nC]
V
GS
[V]
20
22
24
26
28
30
32
34
36
-60
-20
20
60
100
140
180
T
j
[C]
V
BR(
DSS)
[V]
V
GS
Q
gate
V
g s(th)
Q
g (th)
Q
g s
Q
g d
Q
sw
Q
g
25 C
100 C
125 C
1
10
100
1
10
100
1000
t
AV
[s]
I
AV
[A]
Rev. 1.01
page 7
2004-12-15
BSC119N03S G
Package Outline
P-TDSON-8: Outline
Footprint
Dimensions in mm
Rev. 1.01
page 8
2004-12-15
BSC119N03S G
Package Outline
P-TDSON-8: Tape
Dimensions in mm
Rev. 1.01
page 9
2004-12-15
BSC119N03S G
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Strae 53
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.01
page 10
2004-12-15
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