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Электронный компонент: SDP04S60

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2004-02-11
Page 1
SDP04S60, SDD04S60
SDT04S60
Final data
Silicon Carbide Schottky Diode
 Worlds first 600V Schottky diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
Ideal diode for Power Factor
Correction up to 800W
1)
No forward recovery
Product Summary
V
RRM
600
V
Q
c
13
nC
I
F
4
A
P-TO220-2-2.
P-TO252-3-1.
P-TO220-3-1.
Pin 1
PIN 2
PIN 3
n.c.
C
A
Type
Package
Ordering Code
SDP04S60
P-TO220-3-1.
Q67040-S4369
SDD04S60
P-TO252-3-1.
Q67040-S4368
SDT04S60
P-TO220-2-2.
Q67040-S4445
Marking
D04S60
D04S60
D04S60
n.c.
A
C
C
A
Maximum Ratings, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous forward current,
T
C
=100C
I
F
4
A
RMS forward current
,
f
=50Hz
I
FRMS
5.6
Surge non repetitive forward current, sine halfwave
T
C
=25C, t
p
=10ms
I
FSM
12.5
Repetitive peak forward current
T
j
=150C, T
C
=100C, D=0.1
I
FRM
18
Non repetitive peak forward current
t
p
=10s, T
C
=25C
I
FMAX
40
i
2
t value
,
T
C
=25C, t
p
=10ms
i
2
dt
0.78
As
Repetitive peak reverse voltage
V
RRM
600
V
Surge peak reverse voltage
V
RSM
600
Power dissipation
,
T
C
=25C
P
tot
36.5
W
Operating and storage temperature
T
j ,
T
stg
-55... +175
C
2004-02-11
Page 2
SDP04S60, SDD04S60
SDT04S60
Final data
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
-
-
4.1
K/W
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
62
SMD version, device on PCB:
P-TO263-3-2: @ min. footprint
P-TO263-3-2: @ 6 cm
2
cooling area
2)
P-TO252-3-1: @ min. footprint
P-TO252-3-1: @ 6 cm
2
cooling area
2)
R
thJA
-
-
-
-
-
35
-
-
62
-
75
50
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Diode forward voltage
I
F
=4A, T
j
=25C
I
F
=4A, T
j
=150C
V
F
-
-
1.7
2
1.9
2.4
V
Reverse current
V
R
=600V, T
j
=25C
V
R
=600V, T
j
=150C
I
R
-
-
15
40
200
1000
A
1CCM,
V
IN
= 85VAC,
T
j
= 150C,
T
C
=100C,
= 93%,
I
IN = 30%
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
2004-02-11
Page 3
SDP04S60, SDD04S60
SDT04S60
Final data
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Total capacitive charge
V
R
=400V, I
F
=4A, di
F
/dt
=200A/s, T
j
=150C
Q
c
-
13
-
nC
Switching time
V
R
=400V, I
F
=4A, di
F
/dt
=200A/s, T
j
=150C
t
rr
-
n.a.
-
ns
Total capacitance
V
R
=0V, T
C
=25C, f=1MHz
V
R
=300V, T
C
=25C, f=1MHz
V
R
=600V, T
C
=25C, f=1MHz
C
-
-
-
150
10
7
-
-
-
pF
2004-02-11
Page 4
SDP04S60, SDD04S60
SDT04S60
Final data
1 Power dissipation
P
tot
= f (T
C
)
0
20
40
60
80
100 120 140
C
180
T
C
0
5
10
15
20
25
30
W
40
P
tot
2 Diode forward current
I
F
= f (T
C
)
parameter: T
j
175 C
0
20
40
60
80
100 120 140
C
180
T
C
0
0.5
1
1.5
2
2.5
3
3.5
A
4.5
I
F
4 Typ. forward power dissipation vs.
average forward current
P
F(AV)=
f
(I
F
)
T
C
=100C, d = t
p
/T
0
1
2
3
4
5
A
7
I
F(AV)
0
2
4
6
8
10
12
14
W
18
P
F(AV)
d=0.1
d=0.2
d=0.5
d=1
3 Typ. forward characteristic
I
F
= f (V
F
)
parameter: Tj , t
p
= 350 s
0
0.5
1
1.5
2
2.5
V
3.5
V
F
0
1
2
3
4
5
6
A
8
I
F
-40C
25C
100C
125C
150C
2004-02-11
Page 5
SDP04S60, SDD04S60
SDT04S60
Final data
5 Typ. reverse current vs. reverse voltage
 I
R
=f(V
R
)
100
200
300
400
V
600
V
R
-3
10
-2
10
-1
10
0
10
1
10
2
10
A
I
R
25C
100C
125C
150C
6 Transient thermal impedance
Z
thJC
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SDP04S60
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
8 Typ. C stored energy
E
C
=f(V
R
)
0
100
200
300
400
V
600
V
R
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
J
2
E
C
7 Typ. capacitance vs. reverse voltage
 C= f(V
R
)
parameter: T
C
= 25 C, f = 1 MHz
10
0
10
1
10
2
10
3
V
V
R
0
25
50
75
pF
125
C
2004-02-11
Page 6
SDP04S60, SDD04S60
SDT04S60
Final data
9 Typ. capacitive charge vs. current slope
 Q
c
=f(di
F
/d
t
)
parameter: T
j
= 150 C
100 200 300 400 500 600 700 800
A/s
1000
di
F
/dt
0
2
4
6
8
10
nC
14
Q
c
I
F
*0.5
I
F
I
F
*2
2004-02-11
Page 7
SDP04S60, SDD04S60
SDT04S60
Final data
P-TO220-3-1
symbol
[mm]
[inch]
min
max
min
max
A
9.70
10.30
0.3819
0.4055
B
14.88
15.95
0.5858
0.6280
C
0.65
0.86
0.0256
0.0339
D
3.55
3.89
0.1398
0.1531
E
2.60
3.00
0.1024
0.1181
F
6.00
6.80
0.2362
0.2677
G
13.00
14.00
0.5118
0.5512
H
4.35
4.75
0.1713
0.1870
K
0.38
0.65
0.0150
0.0256
L
0.95
1.32
0.0374
0.0520
M
N
4.30
4.50
0.1693
0.1772
P
1.17
1.40
0.0461
0.0551
T
2.30
2.72
0.0906
0.1071
2.54 typ.
0.1 typ.
dimensions
P-TO220-3-1
P-TO252 (D-Pak)
symbol
[mm]
inch]
min
max
min
max
A
6.40
6.73
0.2520
0.2650
B
5.25
5.50
0.2067
0.2165
C
(0.65)
(1.15)
(0.0256) (0.0453)
D
0.63
0.89
0.0248
0.0350
E
F
2.19
2.39
0.0862
0.0941
G
0.76
0.98
0.0299
0.0386
H
0.90
1.21
0.0354
0.0476
K
5.97
6.23
0.2350
0.2453
L
9.40
10.40
0.3701
0.4094
M
0.46
0.58
0.0181
0.0228
N
0.87
1.15
0.0343
0.0453
P
0.51
-
0.0201
-
R
5.00
-
0.1969
-
S
4.17
-
0.1642
-
T
0.26
1.02
0.0102
0.0402
U
-
-
-
-
2.28
0.2520
dimensions
2004-02-11
Page 8
SDP04S60, SDD04S60
SDT04S60
Final data
TO-220-2-2
symbol
[mm]
[inch]
min
max
min
max
A
9.70
10.10
0.3819
0.3976
B
15.30
15.90
0.6024
0.6260
C
0.65
0.85
0.0256
0.0335
D
3.55
3.85
0.1398
0.1516
E
2.60
3.00
0.1024
0.1181
F
9.00
9.40
0.3543
0.3701
G
13.00
14.00
0.5118
0.5512
H
17.20
17.80
0.6772
0.7008
J
4.40
4.80
0.1732
0.1890
K
0.40
0.60
0.0157
0.0236
L
M
N
P
1.10
1.40
0.0433
0.0551
T
U
V
W
X
0.00
0.40
0.0000
0.0157
0.26 typ.
6.6 typ.
0.51 typ.
13.0 typ.
7.5 typ.
0.295 typ.
2.4 typ.
0.095 typ.
4.4 typ.
0.173 typ.
2.54 typ.
0.1 typ.
dimensions
0.41 typ.
1.05 typ.
A
U
V
W
G
M
T
J
F
L
X
P
D
C
K
N
B
H
E
2004-02-11
Page 9
SDP04S60, SDD04S60
SDT04S60
Final data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
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