SGP30N60,

SGB30N60

SGW30N60

Jul-02

Fast IGBT in NPT-technology

75% lower E

off

compared to previous generation

combined with low conduction losses

Short circuit withstand time 10

Designed for:

- Motor controls
- Inverter

NPT-Technology for 600V applications offers:

- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability

Complete product spectrum and PSpice Models :

http://www.infineon.com/igbt/

Type

CE(sat)

Package

Ordering Code

SGP30N60

SGB30N60

SGW30N60

600V

30A

2.5V

150

TO-220AB

TO-263AB

TO-247AC

Q67040-A4463

Q67041-A4713

Q67040-S4237

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

C E

600

DC collector current
T

= 25

= 100

41
30

Pulsed collector current, t

limited by T

jmax

C p u l s

112

Turn off safe operating area
V

600V, T

150

112

Gate-emitter voltage

G E

Avalanche energy, single pulse
I

= 30 A, V

= 50 V, R

= 25

start at T

= 25

A S

165

Short circuit withstand time

= 15V, V

600V, T

150

S C

Power dissipation
T

= 25

t o t

250

Operating junction and storage temperature

, T

s t g

-55...+150

Allowed number of short circuits: <1000; time between short circuits: >1s.

P-TO-220-3-1
(TO-220AB)

P-TO-247-3-1
(TO-247AC)

P-TO-263-3-2 (D²-PAK)
(TO-263AB)

SGP30N60,

SGB30N60

SGW30N60

Jul-02

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic
IGBT thermal resistance,
junction case

t h J C

0.5

Thermal resistance,
junction ambient

t h J A

TO-220AB
TO-247AC

62
40

SMD version, device on PCB

t h J A

TO-263AB

Electrical Characteristic, at T

= 25

C, unless otherwise specified

Value

Parameter

Symbol

Conditions

min.

Typ.

max.

Unit

Static Characteristic
Collector-emitter breakdown voltage

( B R ) C E S

G E

=0V, I

=500

600

Collector-emitter saturation voltage

C E ( s a t )

G E

= 15V, I

=30A

=25

=150

1.7

2.1
2.5

2.4
3.0

Gate-emitter threshold voltage

G E ( t h )

=700

A,V

C E

G E

Zero gate voltage collector current

C E S

C E

=600V,V

G E

=0V

=25

=150

-
-

3000

Gate-emitter leakage current

G E S

C E

=0V,V

G E

=20V

100

Transconductance

f s

C E

=20V, I

=30A

Dynamic Characteristic
Input capacitance

i s s

1600

1920

Output capacitance

o s s

150

180

Reverse transfer capacitance

r s s

C E

=25V,

G E

=0V,

f=1MHz

110

Gate charge

G a t e

C C

=480V, I

=30A

G E

=15V

140

182

Internal emitter inductance
measured 5mm (0.197 in.) from case

T O-220AB
T O-247AC

-
-

Short circuit collector current

C ( S C )

G E

=15V,t

S C

C C

600V,

150

300

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

(one layer, 70

m thick) copper area for

collector connection. PCB is vertical without blown air.

Allowed number of short circuits: <1000; time between short circuits: >1s.

SGP30N60,

SGB30N60

SGW30N60

Jul-02

Switching Characteristic, Inductive Load, at T

=25

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

IGBT Characteristic
Turn-on delay time

d ( o n )

Rise time

Turn-off delay time

d ( o f f )

291

349

Fall time

Turn-on energy

o n

0.64

0.77

Turn-off energy

o f f

0.65

0.85

Total switching energy

t s

=25

C C

=400V,I

=30A,

G E

=0/15V,

=11

1 )

=180nH,

1 )

=900pF

Energy losses include
"tail" and diode
reverse recovery.

1.29

1.62

Switching Characteristic, Inductive Load, at T

=150

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

IGBT Characteristic
Turn-on delay time

d ( o n )

Rise time

Turn-off delay time

d ( o f f )

324

389

Fall time

Turn-on energy

o n

0.98

1.18

Turn-off energy

o f f

0.92

1.19

Total switching energy

t s

=150

C C

=400V,I

=30A,

G E

=0/15V,

= 11

1 )

=180nH,

1 )

=900pF

Energy losses include
"tail" and diode
reverse recovery.

1.90

2.38

Leakage inductance L

and Stray capacity C

due to dynamic test circuit in Figure E.

SGP30N60,

SGB30N60

SGW30N60

Jul-02

COLLE

OR CURRE

10Hz

100Hz

1kHz

10kHz

100kHz

20A

40A

60A

80A

100A

120A

140A

160A

=110°C

=80°C

COLLE

OR CURRE

10V

100V

1000V

0.1A

10A

100A

1ms

200

SWITCHING FREQUENCY

COLLECTOR

EMITTER VOLTAGE

Figure 1. Collector current as a function of
switching frequency
(T

150

C, D = 0.5, V

= 400V,

= 0/+15V, R

= 11

)

Figure 2. Safe operating area

(D = 0, T

= 25

C, T

150

tot

I
SS

25°C

50°C

75°C

100°C

125°C

50W

100W

150W

200W

250W

300W

COLLE

OR CURRE

25°C

50°C

75°C

100°C

125°C

10A

20A

30A

40A

50A

60A

Limited by bond wire

CASE TEMPERATURE

Figure 3. Power dissipation as a function
of case temperature
(T

150

Figure 4. Collector current as a function of
case temperature
(V

15V, T

150

SGP30N60,

SGB30N60

SGW30N60

Jul-02

COLLE

OR CURRE

10A

20A

30A

40A

50A

60A

70A

80A

90A

15V
13V
11V
9V
7V
5V

=20V

COLLE

OR CURRE

10A

20A

30A

40A

50A

60A

70A

80A

90A

15V
13V
11V
9V
7V
5V

=20V

COLLECTOR

EMITTER VOLTAGE

COLLECTOR

EMITTER VOLTAGE

Figure 5. Typical output characteristics
(T

= 25

Figure 6. Typical output characteristics
(T

= 150

COLLE

OR CURRE

10V

10A

20A

30A

40A

50A

60A

70A

80A

90A

100A

-55°C
+150°C

=+25°C

CE(sat)

COLLE

ITT

SATU

L
T

-50°C

0°C

50°C

100°C

150°C

1.0V

1.5V

2.0V

2.5V

3.0V

3.5V

4.0V

GATE

EMITTER VOLTAGE

JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristics
(V

= 10V)

Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V

= 15V)

= 30A

= 60A

SGP30N60,

SGB30N60

SGW30N60

Jul-02

t
,

ITC

10A

20A

30A

40A

50A

60A

10ns

100ns

1000ns

d(on)

d(off)

t
,

ITC

10ns

100ns

1000ns

d(on)

d(off)

COLLECTOR CURRENT

GATE RESISTOR

Figure 9. Typical switching times as a
function of collector current
(inductive load, T

= 150

C, V

= 400V,

= 0/+15V, R

= 11

Dynamic test circuit in Figure E)

Figure

10. Typical switching times as a

function of gate resistor
(inductive load, T

= 150

C, V

= 400V,

= 0/+15V, I

= 30A,

Dynamic test circuit in Figure E)

t
,

ITC

0°C

50°C

100°C

150°C

10ns

100ns

1000ns

d(on)

d(off)

GE(th)

ITT

ESH

L
D

L
T

-50°C

0°C

50°C

100°C

150°C

2.0V

2.5V

3.0V

3.5V

4.0V

4.5V

5.0V

5.5V

typ.

min.

max.

JUNCTION TEMPERATURE

Figure

11. Typical switching times as a

function of junction temperature
(inductive load, V

= 400V, V

= 0/+15V,

= 30A, R

= 11

Dynamic test circuit in Figure E)

Figure

12. Gate-emitter threshold voltage

as a function of junction temperature
(I

= 0.7mA)

SGP30N60,

SGB30N60

SGW30N60

Jul-02

ITC

L
O

SSE

10A

20A

30A

40A

50A

60A

70A

0.0mJ

0.5mJ

1.0mJ

1.5mJ

2.0mJ

2.5mJ

3.0mJ

3.5mJ

4.0mJ

4.5mJ

5.0mJ

off

ITC

L
O

SSE

0.0mJ

0.5mJ

1.0mJ

1.5mJ

2.0mJ

2.5mJ

3.0mJ

3.5mJ

4.0mJ

off

COLLECTOR CURRENT

GATE RESISTOR

Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T

= 150

C, V

= 400V,

= 0/+15V, R

= 11

Dynamic test circuit in Figure E)

Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T

= 150

C, V

= 400V,

= 0/+15V, I

= 30A,

Dynamic test circuit in Figure E)

ITC

I
N

L
O

SSE

0°C

50°C

100°C

150°C

0.0mJ

0.5mJ

1.0mJ

1.5mJ

2.0mJ

2.5mJ

3.0mJ

off

thJC

SIEN

T TH

L I

1µs

10µs

100µs

1ms

10ms 100ms

-4

K/W

-3

K/W

-2

K/W

-1

K/W

0.01

0.02

0.05

0.1

0.2

single pulse

D=0.5

JUNCTION TEMPERATURE

PULSE WIDTH

Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V

= 400V, V

= 0/+15V,

= 30A, R

= 11

Dynamic test circuit in Figure E)

Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t

/ T)

*) E

and E

include losses

due to diode recovery.

*) E

and E

include losses

due to diode recovery.

*) E

and E

include losses

due to diode recovery.

/ R

R , ( 1 / W )

, ( s )

0.3681

0.0555

0.0938

1.26*10

-3

0.0380

1.49*10

-4

SGP30N60,

SGB30N60

SGW30N60

Jul-02

TER

L
T

0nC

50nC

100nC

150nC

200nC

10V

15V

20V

25V

480V

120V

CIT

NCE

10V

20V

30V

10pF

100pF

1nF

rss

oss

iss

GATE CHARGE

COLLECTOR

EMITTER VOLTAGE

Figure 17. Typical gate charge
(I

= 30A)

Figure 18. Typical capacitance as a
function of collector-emitter voltage
(V

= 0V, f = 1MHz)

ORT

RCUI

ND T

I
M

10V

11V

12V

13V

14V

15V

C(sc)

ORT

RCUI

COLL

R CURRE

10V

12V

14V

16V

18V

20V

50A

100A

150A

200A

250A

300A

350A

400A

450A

500A

GATE

EMITTER VOLTAGE

GATE

EMITTER VOLTAGE

Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(V

= 600V, start at T

= 25

Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(V

600V, T

= 150

SGP30N60,

SGB30N60

SGW30N60

Jul-02

dimensions

symbol

[mm]

[inch]

min

max

min

max

9.70

10.30

0.3819

0.4055

14.88

15.95

0.5858

0.6280

0.65

0.86

0.0256

0.0339

3.55

3.89

0.1398

0.1531

2.60

3.00

0.1024

0.1181

6.00

6.80

0.2362

0.2677

13.00

14.00

0.5118

0.5512

4.35

4.75

0.1713

0.1870

0.38

0.65

0.0150

0.0256

0.95

1.32

0.0374

0.0520

2.54 typ.

0.1 typ.

4.30

4.50

0.1693

0.1772

1.17

1.40

0.0461

0.0551

2.30

2.72

0.0906

0.1071

TO-220AB

dimensions

symbol

[mm]

[inch]

min

max

min

max

9.80

10.20

0.3858

0.4016

0.70

1.30

0.0276

0.0512

1.00

1.60

0.0394

0.0630

1.03

1.07

0.0406

0.0421

2.54 typ.

0.1 typ.

0.65

0.85

0.0256

0.0335

5.08 typ.

0.2 typ.

4.30

4.50

0.1693

0.1772

1.17

1.37

0.0461

0.0539

9.05

9.45

0.3563

0.3720

2.30

2.50

0.0906

0.0984

15 typ.

0.5906 typ.

0.00

0.20

0.0000

0.0079

4.20

5.20

0.1654

0.2047

8° max

2.40

3.00

0.0945

0.1181

0.40

0.60

0.0157

0.0236

10.80

0.4252

1.15

0.0453

6.23

0.2453

4.60

0.1811

9.40

0.3701

TO-263AB (D

Pak)

16.15

0.6358

SGP30N60,

SGB30N60

SGW30N60

Jul-02

dimensions

symbol

[mm]

[inch]

min

max

min

max

4.78

5.28

0.1882

0.2079

2.29

2.51

0.0902

0.0988

1.78

2.29

0.0701

0.0902

1.09

1.32

0.0429

0.0520

1.73

2.06

0.0681

0.0811

2.67

3.18

0.1051

0.1252

0.76 max

0.0299 max

20.80

21.16

0.8189

0.8331

15.65

16.15

0.6161

0.6358

5.21

5.72

0.2051

0.2252

19.81

20.68

0.7799

0.8142

3.560

4.930

0.1402

0.1941

3.61

0.1421

6.12

6.22

0.2409

0.2449

TO-247AC

SGP30N60,

SGB30N60

SGW30N60

Jul-02

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: SGW30N60

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: SGW30N60