2003-07-02
Page 1
SPD04N80C3
Final data
Cool MOSTM
Power Transistor
V
DS
800
V
R
DS(on)
1.3
I
D
4
A
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
P-TO252-3-1
Type
Package
Ordering Code
SPD04N80C3
P-TO252-3-1
Q47040-S4563
Marking
04N80C3
Maximum Ratings, at
T
C
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
C
= 25 C
T
C
= 100 C
I
D
4
2.5
A
Pulsed drain current,
t
p
limited by
T
jmax
I
D puls
12
Avalanche energy, single pulse
I
D
=0.8A,
V
DD
=50V
E
AS
170
mJ
Avalanche energy, repetitive t
AR
limited by
T
jmax
1)
I
D
=4A,
V
DD
=50V
E
AR
0.1
Avalanche current, repetitive t
AR
limited by
T
jmax
I
AR
4
A
Gate source voltage
V
GS
20
V
Power dissipation,
T
C
= 25C
P
tot
63
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
C
2003-07-02
Page 2
SPD04N80C3
Final data
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
V
DS
= 640 V, I
D
= 4 A,
T
j
= 125 C
dv/dt
50
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal resistance, junction - case
R
thJC
-
-
2
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
R
thJA
-
-
-
-
75
50
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
3)
T
sold
-
-
260
C
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Drain-source breakdown voltage
V
(BR)DSS V
GS
=0V, I
D
=0.25mA
800
-
-
V
Drain-Source avalanche
breakdown voltage
V
(BR)DS
V
GS
=0V, I
D
=4A
-
870
-
Gate threshold voltage
V
GS(th)
I
D
=240
,
V
GS
=
V
DS
2.1
3
3.9
Zero gate voltage drain current
I
DSS
V
DS
=800V,
V
GS
=0V,
T
j
=25C,
T
j
=150C
-
-
0.5
-
10
100
A
Gate-source leakage current
I
GSS
V
GS
=20V,
V
DS
=0V
-
-
100
nA
Drain-source on-state resistance R
DS(on)
V
GS
=10V, I
D
=2.5A,
T
j
=25C
T
j
=150C
-
-
1.1
3
1.3
-
Gate input resistance
R
G
f=1MHz, open Drain
-
0.7
-
2003-07-02
Page 3
SPD04N80C3
Final data
Electrical Characteristics , at
T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=2.5A
-
3
-
S
Input capacitance
C
iss
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
570
-
pF
Output capacitance
C
oss
-
240
-
Reverse transfer capacitance
C
rss
-
12
-
Effective output capacitance,
4)
energy related
C
o(er)
V
GS
=0V,
V
DS
=0V to 480V
-
15.6
-
pF
Effective output capacitance,
5)
time related
C
o(tr)
-
33.7
-
Turn-on delay time
t
d(on)
V
DD
=400V,
V
GS
=0/10V,
I
D
=4A,
R
G
=22
-
25
-
ns
Rise time
t
r
-
15
-
Turn-off delay time
t
d(off)
-
65
75
Fall time
t
f
-
12
16
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=640V, I
D
=4A
-
2.4
-
nC
Gate to drain charge
Q
gd
-
11
-
Gate charge total
Q
g
V
DD
=640V, I
D
=4A,
V
GS
=0 to 10V
-
20
26
Gate plateau voltage
V
(plateau)
V
DD
=640V, I
D
=4A
-
6
-
V
1Repetitve avalanche causes additional power losses that can be calculated as P
AV
=
E
AR
*
f
.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
3Soldering temperature for TO-263: 220C, reflow
4C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80% V
DSS
.
5C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80% V
DSS
.
2003-07-02
Page 4
SPD04N80C3
Final data
Electrical Characteristics, at
T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Inverse diode continuous
forward current
I
S
T
C
=25C
-
-
4
A
Inverse diode direct current,
pulsed
I
SM
-
-
12
Inverse diode forward voltage
V
SD
V
GS
=0V, I
F
=I
S
-
1
1.2
V
Reverse recovery time
t
rr
V
R
=640V, I
F
=I
S
,
di
F
/dt
=100A/s
-
520
-
ns
Reverse recovery charge
Q
rr
-
4
-
C
Peak reverse recovery current
I
rrm
-
12
-
A
Peak rate of fall of reverse
recovery current
di
rr
/dt
-
300
-
A/s
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
typ.
typ.
Thermal resistance
R
th1
0.033
K/W
R
th2
0.063
R
th3
0.113
R
th4
0.432
R
th5
0.423
R
th6
0.14
Thermal capacitance
C
th1
0.00008691
Ws/K
C
th2
0.0003336
C
th3
0.0004755
C
th4
0.001405
C
th5
0.003503
C
th6
0.036
External Heatsink
T
j
T
case
T
am b
C
th1
C
th2
R
th1
R
th,n
C
th,n
P
tot
(t)
2003-07-02
Page 5
SPD04N80C3
Final data
1 Power dissipation
P
tot
= f (
T
C
)
0
20
40
60
80
100
120
C
160
T
C
0
5
10
15
20
25
30
35
40
45
50
55
60
W
70
SPD04N80C3
P
tot
2 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 ,
T
C
=25C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A
I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
3 Transient thermal impedance
Z
thJC
= f (t
p
)
parameter: D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-1
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
thJ
C
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
4 Typ. output characteristic
I
D
= f (
V
DS
);
T
j
=25C
parameter: t
p
= 10 s,
V
GS
0
4
8
12
16
20
V
26
V
DS
0
1
2
3
4
5
6
7
8
9
10
11
A
13
I
D
6.5V
6V
5.5V
5V
4V
20V
8V
7V
PDF 
ZIP