SPD 08N05L
Data Sheet
1
06.99
SIPMOS
Power Transistor
Product Summary
Drain source voltage
55
V
DS
V
Drain-Source on-state resistance
0.1
R
DS(on)
I
D
Continuous drain current
8.4
A
Features
N channel
Enhancement mode
Avalanche rated
Logic Level
d
v/dt rated
175C operating temperature
Pin 1
Pin 2
Pin 3
G
D
S
Packaging
Type
Package
Ordering Code
SPD08N05L
Tape and Reel
P-TO252
Q67040-S4134
SPU08N05L
Tube
Q67040-S4182-A2
P-TO251
MaximumRatings , at
Tj = 25 C, unless otherwise specified
Parameter
Symbol
Unit
Value
Continuous drain current
T
C
= 25 C
T
C
= 100 C
8.4
5.9
I
D
A
Pulsed drain current
T
C
= 25 C
I
Dpulse
34
Avalanche energy, single pulse
I
D
= 8.4 A,
V
DD
= 25 V,
R
GS
= 25
mJ
E
AS
35
Avalanche energy, periodic limited by
T
jmax
2.4
E
AR
Reverse diode d
v/dt
I
S
= 8.4 A,
V
DS
= 40 V, d
i/dt = 200 A/s,
T
jmax
= 175 C
d
v/dt
6
kV/s
Gate source voltage
V
GS
20
V
Power dissipation
T
C
= 25 C
P
tot
24
W
Operating and storage temperature
T
j ,
T
stg
C
-55... +175
55/175/56
IEC climatic category; DIN IEC 68-1
SPD 08N05L
Data Sheet
2
06.99
Thermal Characteristics
Parameter
Values
Symbol
Unit
typ.
max.
min.
Characteristics
R
thJC
-
6.25
K/W
Thermal resistance, junction - case
-
Thermal resistance, junction - ambient, leded
R
thJA
-
100
-
-
-
-
75
50
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
Electrical Characteristics, at
Tj = 25 C, unless otherwise specified
Parameter
Symbol
Unit
Values
min.
max.
typ.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA
-
V
(BR)DSS
55
-
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 10 A
V
GS(th)
2
1.6
1.2
Zero gate voltage drain current
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 150 C
-
-
I
DSS
A
1
100
0.1
-
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
I
GSS
-
10
nA
100
Drain-Source on-state resistance
V
GS
= 4.5 V,
I
D
= 5.9 A
V
GS
= 10 V,
I
D
= 5.9 A
R
DS(on)
-
-
0.125
0.08
0.15
0.1
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain
connection. PCB is vertical without blown air.
SPD 08N05L
Data Sheet
3
06.99
Electrical Characteristics, at
Tj = 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
= 5.9 A
g
fs
3
6.2
-
S
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
iss
-
250
315
pF
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
oss
-
80
100
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
rss
-
45
56
Turn-on delay time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 8.4 A,
R
G
= 25
t
d(on)
-
20
30
ns
Rise time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 8.4 A,
R
G
= 25
t
r
-
40
60
Turn-off delay time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 8.4 A,
R
G
= 25
t
d(off)
-
25
40
Fall time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 8.4 A,
R
G
= 25
t
f
-
20
30
SPD 08N05L
Data Sheet
4
06.99
Electrical Characteristics, at
Tj = 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Gate to source charge
V
DD
= 40 V,
I
D
= 8.4 A
1.5
nC
1
Q
gs
-
-
3.5
Q
gd
Gate to drain charge
V
DD
= 40 V,
I
D
= 8.4 A
5.4
Gate charge total
V
DD
= 40 V,
I
D
= 8.4 A,
V
GS
= 0 to 10 V
-
9
14
Q
g
Gate plateau voltage
V
DD
= 40 V,
I
D
= 8.4 A
V
(plateau)
4
-
V
-
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 C
I
S
-
-
8.4
A
Inverse diode direct current,pulsed
T
C
= 25 C
I
SM
-
-
34
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 16.8 A
V
SD
-
1.05
V
1.8
Reverse recovery time
V
R
= 30 V,
I
F
=
I
S
, d
i
F
/d
t = 100 A/s
t
rr
-
50
ns
75
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S
, d
i
F
/d
t = 100 A/s
Q
rr
-
C
0.085
0.13
SPD 08N05L
Data Sheet
5
06.99
Power Dissipation
P
tot
=
f (T
C
)
0
20
40
60
80
100 120 140 160 C 190
T
C
0
2
4
6
8
10
12
14
16
18
20
22
W
26
SPD08N05L
P
tot
Drain current
I
D
=
f (T
C
)
parameter:
V
GS
10 V
0
20
40
60
80
100 120 140 160 C 190
T
C
0
1
2
3
4
5
6
7
8
A
10
SPD08N05L
I
D
Transient thermal impedance
Z
thJC
=
f (t
p
)
parameter :
D = t
p
/
T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
K/W
SPD08N05L
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Safe operating area
I
D
=
f (V
DS
)
parameter :
D = 0 , T
C
= 25 C
10
-1
10
0
10
1
10
2
V
V
DS
-1
10
0
10
1
10
2
10
A
SPD08N05L
I
D
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 s
10 s
t
p
= 2.7s
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