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Электронный компонент: SPP02N80C3

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2003-10-14
Page 1
SPP02N80C3
SPA02N80C3
Final data
Cool MOSTM
Power Transistor
V
DS
800
V
R
DS(on)
2.7
I
D
2
A
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31
P-TO220-3-1
P-TO220-3-31
1
2
3
Marking
02N80C3
02N80C3
Type
Package
Ordering Code
SPP02N80C3
P-TO220-3-1
Q67040-S4432
SPA02N80C3
P-TO220-3-31 Q67040S4634
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
Continuous drain current
T
C
= 25 C
T
C
= 100 C
I
D
2
1.2
2
1)
1.2
1)
A
Pulsed drain current,
t
p
limited by
T
jmax
I
D puls
6
6
A
Avalanche energy, single pulse
I
D
=1A,
V
DD
=50V
E
AS
90
90
mJ
Avalanche energy, repetitive t
AR
limited by
T
jmax
2)
I
D
=2A,
V
DD
=50V
E
AR
0.05
0.05
Avalanche current, repetitive t
AR
limited by
T
jmax
I
AR
2
2
A
Gate source voltage
V
GS
20
20
V
Gate source voltage AC (f >1Hz)
V
GS
30
30
Power dissipation,
T
C
= 25C
P
tot
42
30.5
W
SPP
Operating and storage temperature
T
j ,
T
stg
-55...+150
C
2003-10-14
Page 2
SPP02N80C3
SPA02N80C3
Final data
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
V
DS
= 640 V, I
D
= 2 A,
T
j
= 125 C
dv/dt
50
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal resistance, junction - case
R
thJC
-
-
3
K/W
Thermal resistance, junction - case, FullPAK
R
thJC_FP
-
-
4.1
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
62
Thermal resistance, junction - ambient, FullPAK
R
thJA_FP
-
-
80
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
T
sold
-
-
260
C
Electrical Characteristics, at Tj=25C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Drain-source breakdown voltage
V
(BR)DSS V
GS
=0V, I
D
=0.25mA
800
-
-
V
Drain-Source avalanche
breakdown voltage
V
(BR)DS
V
GS
=0V, I
D
=2A
-
870
-
Gate threshold voltage
V
GS(th)
I
D
=120
A, VGS=VDS
2.1
3
3.9
Zero gate voltage drain current
I
DSS
V
DS
=800V,
V
GS
=0V,
T
j
=25C
T
j
=150C
-
-
0.5
-
5
50
A
Gate-source leakage current
I
GSS
V
GS
=20V,
V
DS
=0V
-
-
100
nA
Drain-source on-state resistance R
DS(on)
V
GS
=10V, I
D
=1.2A
T
j
=25C
T
j
=150C
-
-
2.4
6.5
2.7
-
Gate input resistance
R
G
f=1MHz, open drain
-
0.7
-
2003-10-14
Page 3
SPP02N80C3
SPA02N80C3
Final data
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=1.2A
-
1.5
-
S
Input capacitance
C
iss
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
290
-
pF
Output capacitance
C
oss
-
130
-
Reverse transfer capacitance
C
rss
-
6
-
Effective output capacitance,
3)
energy related
C
o(er)
V
GS
=0V,
V
DS
=0V to 480V
-
11.2
-
Effective output capacitance,
4)
time related
C
o(tr)
-
20.6
-
Turn-on delay time
t
d(on)
V
DD
=400V,
V
GS
=0/10V,
I
D
=2A,
R
G
=47
-
25
-
ns
Rise time
t
r
-
15
-
Turn-off delay time
t
d(off)
-
65
75
Fall time
t
f
-
18
23
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=640V, I
D
=2A
-
1
-
nC
Gate to drain charge
Q
gd
-
5
-
Gate charge total
Q
g
V
DD
=640V, I
D
=2A,
V
GS
=0 to 10V
-
9
12
Gate plateau voltage
V
(plateau)
V
DD
=640V, I
D
=2A
-
6
-
V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as P
AV
=
E
AR
*
f
.
3C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80% V
DSS
.
4C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80% V
DSS
.
2003-10-14
Page 4
SPP02N80C3
SPA02N80C3
Final data
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Inverse diode continuous
forward current
I
S
T
C
=25C
-
-
2
A
Inverse diode direct current,
pulsed
I
SM
-
-
6
Inverse diode forward voltage
V
SD
V
GS
=0V, I
F
=I
S
-
1
1.2
V
Reverse recovery time
t
rr
V
R
=640V, I
F
=I
S
,
di
F
/dt
=100A/s
-
520
-
ns
Reverse recovery charge
Q
rr
-
2
-
C
Peak reverse recovery current
I
rrm
-
6
-
A
Peak rate of fall of reverse
recovery current
di
rr
/dt
T
j
=25C
-
200
-
A/s
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
SPA
SPA
R
th1
0.067
0.067
K/W
C
th1
0.00004221 0.00004221 Ws/K
R
th2
0.126
0.126
C
th2
0.0001651
0.0001651
R
th3
0.215
0.215
C
th3
0.0002432
0.0002432
R
th4
0.655
0.419
C
th4
0.0007613
0.0007613
R
th5
0.569
0.719
C
th5
0.002455
0.003835
R
th6
0.161
2.543
C
th6
0.412
0.412
SPP
SPP
External H eatsink
T
j
T
case
T
am b
C
th1
C
th2
R
th1
R
th,n
C
th,n
P
tot
(t)
2003-10-14
Page 5
SPP02N80C3
SPA02N80C3
Final data
1 Power dissipation
P
tot
= f (
T
C
)
0
20
40
60
80
100
120
C
160
T
C
0
5
10
15
20
25
30
35
40
W
50
SPP02N80C3
P
tot
2 Power dissipation FullPAK
P
tot
= f (
T
C
)
0
15
30
45
60
75
90 105 120
C
150
T
j
0
5
10
15
20
25
W
35
P
tot
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 ,
T
C
=25C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
A

I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
4 Safe operating area FullPAK
I
D
= f (
V
DS
)
parameter: D = 0,
T
C
= 25C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
A

I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC