2004-03-30
Rev. 2.1
Page 1
SPU02N60S5
SPD02N60S5
Cool MOSTM
Power Transistor
V
DS
600
V
R
DS(on)
3
I
D
1.8
A
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
P-TO251.
P-TO252.
1
3
2
1
3
2
Type
Package
Ordering Code
SPU02N60S5
P-TO251.
Q67040-S4226
SPD02N60S5
P-TO252.
Q67040-S4213
Marking
02N60S5
02N60S5
Maximum Ratings
Parameter
Symbol
Value
Unit
Continuous drain current
T
C
= 25 C
T
C
= 100 C
I
D
1.8
1.1
A
Pulsed drain current, t
p
limited by T
jmax
I
D puls
3.2
Avalanche energy, single pulse
I
D
= 1.35 A, V
DD
= 50 V
E
AS
50
mJ
Avalanche energy, repetitive t
AR
limited by T
jmax
1)
I
D
= 1.8 A, V
DD
= 50 V
E
AR
0.07
Avalanche current, repetitive t
AR
limited by T
jmax
I
AR
1.8
A
Gate source voltage
V
GS
20
V
Gate source voltage AC (f >1Hz)
V
GS
30
Power dissipation,
T
C
= 25C
P
tot
25
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
C
2004-03-30
Rev. 2.1
Page 2
SPU02N60S5
SPD02N60S5
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
V
DS
= 480 V, I
D
= 1.8 A, T
j
= 125 C
dv/dt
20
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal resistance, junction - case
R
thJC
-
-
5
K/W
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
75
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
R
thJA
-
-
-
-
75
50
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
T
sold
-
-
260
C
Electrical Characteristics, at Tj=25C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Drain-source breakdown voltage V
(BR)DSS V
GS
=0V, I
D
=0.25mA
600
-
-
V
Drain-Source avalanche
breakdown voltage
V
(BR)DS
V
GS
=0V, I
D
=1.8A
-
700
-
Gate threshold voltage
V
GS(th)
I
D
=80
, V
GS
=V
DS
3.5
4.5
5.5
Zero gate voltage drain current
I
DSS
V
DS
=600V, V
GS
=0V,
T
j
=25C,
T
j
=150C
-
-
0.5
-
1
50
A
Gate-source leakage current
I
GSS
V
GS
=20V, V
DS
=0V
-
-
100
nA
Drain-source on-state resistance R
DS(on)
V
GS
=10V, I
D
=1.1A,
T
j
=25C
T
j
=150C
-
-
2.7
7.3
3
-
2004-03-30
Rev. 2.1
Page 3
SPU02N60S5
SPD02N60S5
Electrical Characteristics , at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Characteristics
Transconductance
g
fs
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
=1.1A
-
1.4
-
S
Input capacitance
C
iss
V
GS
=0V, V
DS
=25V,
f
=1MHz
-
240
-
pF
Output capacitance
C
oss
-
77
-
Reverse transfer capacitance
C
rss
-
4.4
-
Turn-on delay time
t
d(on)
V
DD
=350V, V
GS
=0/10V,
I
D
=1.8A, R
G
=50
-
35
-
ns
Rise time
t
r
-
35
-
Turn-off delay time
t
d(off)
-
35
42
Fall time
t
f
-
20
30
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=350V, I
D
=1.8A
-
2.3
-
nC
Gate to drain charge
Q
gd
-
4.5
-
Gate charge total
Q
g
V
DD
=350V, I
D
=1.8A,
V
GS
=0 to 10V
-
7.3
9.5
Gate plateau voltage
V
(plateau)
V
DD
=350V, I
D
=1.8A
-
8
-
V
1Repetitve avalanche causes additional power losses that can be calculated as P
AV
=E
AR
*f.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
2004-03-30
Rev. 2.1
Page 4
SPU02N60S5
SPD02N60S5
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Inverse diode continuous
forward current
I
S
T
C
=25C
-
-
1.8
A
Inverse diode direct current,
pulsed
I
SM
-
-
3.2
Inverse diode forward voltage
V
SD
V
GS
=0V, I
F
=I
S
-
1
1.2
V
Reverse recovery time
t
rr
V
R
=350V, I
F
=I
S
,
di
F
/dt
=100A/s
-
860
1460 ns
Reverse recovery charge
Q
rr
-
1.6
-
C
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
typ.
typ.
Thermal resistance
R
th1
0.1
K/W
R
th2
0.184
R
th3
0.306
R
th4
1.207
R
th5
0.974
R
th6
0.251
Thermal capacitance
C
th1
0.00002806
Ws/K
C
th2
0.0001113
C
th3
0.0001679
C
th4
0.000547
C
th5
0.001388
C
th6
0.019
External H eatsink
T
j
T
case
T
am b
C
th1
C
th2
R
th1
R
th,n
C
th,n
P
tot
(t)
2004-03-30
Rev. 2.1
Page 5
SPU02N60S5
SPD02N60S5
1 Power dissipation
P
tot
= f (T
C
)
0
20
40
60
80
100
120
C
160
T
C
0
2
4
6
8
10
12
14
16
18
20
22
24
W
28
SPU02N60S5
P
tot
2 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
C
=25C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
A
I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
3 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25C
parameter: t
p
= 10 s, V
GS
0
5
10
15
V
25
V
DS
0
1
2
3
4
A
6
I
D
6V
7V
7.5V
8V
8.5V
9V
10V
12V
20V
4 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= 1.1 A, V
GS
= 10 V
-60
-20
20
60
100
C
180
T
j
0
2
4
6
8
10
12
14
17
SPU02N60S5
R
DS(on)
typ
98%
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