2003-09-17
Page 1
SPW20N60C3
Final data
Cool MOSTM
Power Transistor
V
DS
@
T
jmax
650
V
R
DS(on)
0.19
I
D
20.7
A
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
Improved transconductance
P-TO247
Type
Package
Ordering Code
SPW20N60C3
P-TO247
Q67040-S4406
Marking
20N60C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Continuous drain current
T
C
= 25 C
T
C
= 100 C
I
D
20.7
13.1
A
Pulsed drain current,
t
p
limited by
T
jmax
I
D puls
62.1
Avalanche energy, single pulse
I
D
= 10 A,
V
DD
= 50 V
E
AS
690
mJ
Avalanche energy, repetitive t
AR
limited by
T
jmax
1)
I
D
= 20 A,
V
DD
= 50 V
E
AR
1
Avalanche current, repetitive t
AR
limited by
T
jmax
I
AR
20
A
Reverse diode dv/dt
IS=20.7A, VDS=480V, Tj=125C
dv/dt
6
V/ns
Gate source voltage static
V
GS
20
V
Gate source voltage AC (f >1Hz)
V
GS
30
Power dissipation,
TC = 25C
P
tot
208
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
C
2003-09-17
Page 2
SPW20N60C3
Final data
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
V
DS
= 480 V, I
D
= 20.7 A,
T
j
= 125 C
dv/dt
50
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal resistance, junction - case
R
thJC
-
-
0.6
K/W
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
62
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
T
sold
-
-
260
C
Electrical Characteristics, at Tj=25C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Drain-source breakdown voltage
V
(BR)DSS V
GS
=0V, I
D
=0.25mA
600
-
-
V
Drain-Source avalanche
breakdown voltage
V
(BR)DS
V
GS
=0V, I
D
=20A
-
700
-
Gate threshold voltage
V
GS(th)
I
D
=1000
,
V
GS
=
V
DS
2.1
3
3.9
Zero gate voltage drain current
I
DSS
V
DS
=600V,
V
GS
=0V,
T
j
=25C,
T
j
=150C
-
-
0.5
-
25
250
A
Gate-source leakage current
I
GSS
V
GS
=30V,
V
DS
=0V
-
-
100
nA
Drain-source on-state resistance R
DS(on)
V
GS
=10V, I
D
=13.1A,
T
j
=25C
T
j
=150C
-
-
0.16
0.43
0.19
-
Gate input resistance
R
G
f=1MHz, open Drain
-
0.54
-
2003-09-17
Page 3
SPW20N60C3
Final data
Electrical Characteristics , at
T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Transconductance
g
fs
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
=13.1A
-
17.5
-
S
Input capacitance
C
iss
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
2400
-
pF
Output capacitance
C
oss
-
780
-
Reverse transfer capacitance
C
rss
-
50
-
Effective output capacitance,
2)
energy related
C
o(er)
V
GS
=0V,
V
DS
=0V to 480V
-
83
-
pF
Effective output capacitance,
3)
time related
C
o(tr)
-
160
-
Turn-on delay time
t
d(on)
V
DD
=380V,
V
GS
=0/13V,
I
D
=20.7A,
R
G
=3.6
,
T
j
=125
-
10
-
ns
Rise time
t
r
V
DD
=380V,
V
GS
=0/13V,
I
D
=20.7A,
R
G
=3.6
-
5
-
Turn-off delay time
t
d(off)
-
67
100
Fall time
t
f
-
4.5
12
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=480V, I
D
=20.7A
-
11
-
nC
Gate to drain charge
Q
gd
-
33
-
Gate charge total
Q
g
V
DD
=480V, I
D
=20.7A,
V
GS
=0 to 10V
-
87
114
Gate plateau voltage
V
(plateau)
V
DD
=480V, I
D
=20.7A
-
5.5
-
V
1Repetitve avalanche causes additional power losses that can be calculated as P
AV
=
E
AR
*
f
.
2C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80% V
DSS
.
3C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80% V
DSS
.
2003-09-17
Page 4
SPW20N60C3
Final data
Electrical Characteristics, at
T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Inverse diode continuous
forward current
I
S
T
C
=25C
-
-
20.7 A
Inverse diode direct current,
pulsed
I
SM
-
-
62.1
Inverse diode forward voltage
V
SD
V
GS
=0V, I
F
=I
S
-
1
1.2
V
Reverse recovery time
t
rr
V
R
=480V, I
F
=I
S
,
di
F
/dt
=100A/s
-
500
800
ns
Reverse recovery charge
Q
rr
-
11
-
C
Peak reverse recovery current
I
rrm
-
70
-
A
Peak rate of fall of reverse
recovery current
di
rr
/dt
-
1400
-
A/s
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
typ.
typ.
Thermal resistance
R
th1
0.00769
K/W
R
th2
0.015
R
th3
0.029
R
th4
0.114
R
th5
0.136
R
th6
0.059
Thermal capacitance
C
th1
0.0003763
Ws/K
C
th2
0.001411
C
th3
0.001931
C
th4
0.005297
C
th5
0.012
C
th6
0.091
External H eatsink
T
j
T
case
T
am b
C
th1
C
th2
R
th1
R
th,n
C
th,n
P
tot
(t)
2003-09-17
Page 5
SPW20N60C3
Final data
1 Power dissipation
P
tot
= f (
T
C
)
0
20
40
60
80
100
120
C
160
T
C
0
20
40
60
80
100
120
140
160
180
200
W
240
SPW20N60C3
P
tot
2 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 ,
T
C
=25C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A
I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
3 Transient thermal impedance
Z
thJC
= f (t
p
)
parameter: D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
4 Typ. output characteristic
I
D
= f (
V
DS
);
T
j
=25C
parameter: t
p
= 10 s,
V
GS
0
5
10
15
V
25
V
DS
0
10
20
30
40
50
60
A
80
I
D
4,5V
5V
5,5V
6V
6,5V
7V
20V
10V
8V
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