www.docs.chipfind.ru
2002-10-07
Page 1
SPW47N60C2
Final data
Cool MOSTM
Power Transistor
Feature
New revolutionary high voltage technology
Worldwide best R
DS(on)
in TO 247
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved noise immunity
Product Summary
V
DS
600
V
R
DS(on)
0.07
I
D
47
A
P-TO247
Type
Package
Ordering Code
SPW47N60C2
P-TO247
Q67040-S4323
Marking
47N60C2
Maximum Ratings, at T
C
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
C
= 25 C
T
C
= 100 C
I
D
47
30
A
Pulsed drain current, t
p
limited by T
jmax
I
D puls
94
Avalanche energy, single pulse
I
D
=10A, V
DD
=50V
E
AS
1800
mJ
Avalanche energy, repetitive t
AR
limited by T
jmax
1)
I
D
=20A, V
DD
=50V
E
AR
1
Avalanche current, repetitive t
AR
limited by T
jmax
I
AR
20
A
Reverse diode dv/dt
I
S
=47A, V
DS
<
V
DD
, di/dt=100A/s, T
jmax
=150C
dv/dt
6
V/ns
Gate source voltage
V
GS
20
V
Power dissipation,
T
C
= 25C
P
tot
415
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
C
2002-10-07
Page 2
SPW47N60C2
Final data
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
-
-
0.3
K/W
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
62
Linear derating factor
-
-
3.33 W/K
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
T
sold
-
-
260
C
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V, I
D
=0.25mA
V
(BR)DSS
600
-
-
V
Drain-source avalanche breakdown voltage
V
GS
=0V, I
D
=20A
V
(BR)DS
-
700
-
Gate threshold voltage, V
GS
= V
DS
I
D
=2.7mA
V
GS(th)
3.5
4.5
5.5
Zero gate voltage drain current
V
DS
= 600 V, V
GS
= 0 V, T
j
= 25 C
V
DS
= 600 V, V
GS
= 0 V, T
j
= 150 C
I
DSS
-
-
0.5
-
25
250
A
Gate-source leakage current
V
GS
=20V, V
DS
=0V
I
GSS
-
-
100
nA
Drain-source on-state resistance
V
GS
=10V, I
D
=30A, T
j
=25C
R
DS(on)
-
0.06
0.07
Gate input resistance
f = 1 MHz, open drain
R
G
-
0.62
-
1Repetitve avalanche causes additional power losses that can be calculated as P
AV
=E
AR
*f.
2002-10-07
Page 3
SPW47N60C2
Final data
Electrical Characteristics , at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Characteristics
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=30A
-
30
-
S
Input capacitance
C
iss
V
GS
=0V, V
DS
=25V,
f=1MHz
-
8800
-
pF
Output capacitance
C
oss
-
3150
-
Reverse transfer capacitance
C
rss
-
36
-
Effective output capacitance,
1)
energy related
C
o(er)
V
GS
=0V,
V
DS
=0V to 480V
-
233
-
pF
Effective output capacitance,
2)
time related
C
o(tr)
-
470
-
Turn-on delay time
t
d(on)
V
DD
=380V, V
GS
=0/13V,
I
D
=47A, R
G
=1.8
,
T
j
=125C
-
28
-
ns
Rise time
t
r
-
9.5
-
Turn-off delay time
t
d(off)
-
103
155
Fall time
t
f
-
9.6
14.4
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=350V, I
D
=47A
-
56
-
nC
Gate to drain charge
Q
gd
-
123
-
Gate charge total
Q
g
V
DD
=350V, I
D
=47A,
V
GS
=0 to 10V
-
220
286
Gate plateau voltage
V
(plateau)
V
DD
=350V, I
D
=47A
-
8
-
V
1C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
2C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
2002-10-07
Page 4
SPW47N60C2
Final data
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Characteristics
Inverse diode continuous
forward current
I
S
T
C
=25C
-
-
47
A
Inverse diode direct current,
pulsed
I
SM
-
-
94
Inverse diode forward voltage
V
SD
V
GS
=0V, I
F
=I
S
-
1
1.2
V
Reverse recovery time
t
rr
V
R
=350V, I
F
=I
S
,
di
F
/dt=100A/s
-
650
1100 ns
Reverse recovery charge
Q
rr
-
24
-
C
Peak reverse recovery current
I
rrm
-
62
-
A
Peak rate of fall of reverse
recovery current
di
rr
/dt
-
2500
-
A/s
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
typ.
typ.
Thermal resistance
R
th1
0.002694
K/W
R
th2
0.006036
R
th3
0.00791
R
th4
0.023
R
th5
0.035
R
th6
0.018
Thermal capacitance
C
th1
0.001219
Ws/K
C
th2
0.004011
C
th3
0.006484
C
th4
0.008028
C
th5
0.05
C
th6
0.316
External Heatsink
T
j
T
case
T
am b
C
th1
C
th2
R
th1
R
th,n
C
th,n
P
tot
(t)
2002-10-07
Page 5
SPW47N60C2
Final data
1 Power dissipation
P
tot
= f (T
C
)
0
20
40
60
80
100
120
C
160
T
C
0
50
100
150
200
250
300
350
400
W
500
SPW47N60C2
P
tot
2 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
C
=25C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A
I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
3 Transient thermal impedance
Z
thJC
= f (t
p
)
parameter: D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
thJC
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
4 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25C
parameter: t
p
= 10 s, V
GS
0
5
10
15
V
25
V
DS
0
20
40
60
80
100
120
140
160
180
A
220
I
D
7V
9V
10V
11V
8V
20V
15V
12V
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