I N T E G R A L
ILMS5380
Korzhenevskogo 12, Minsk, 220108, Republic of Belarus
Fax: +375 (17) 278 28 22,
Phone: +375 (17) 278 07 11, 212 24 70, 212 24 61,
212 69 16
E-mail: office@bms.by
URL: www.bms.by
M
ICROCIRCUIT FOR REMOTE CONTROL SYSTEMS
Description
Microcircuit is mini photomodule designed for IR
signal reception in remote control systems.
Photomodule output signal can be decode di-
rectly by microprocessor. Advantage is resistant
functioning and protection from uncontrolled out-
put impulse.
Characteristic:
Photodiode and preamplifier in one frame
Inside band-pass filter for subcarrier fre-
quency (PCM) of 38 Hz
Frame material protects from daylight expo-
sure
Special screen protects from external electric
fields exposure
Supply voltage 5V
L and CMOS compability
Block diagram
ILMS5380
Korzhenevskogo 12, Minsk, 220108, Republic of
Belarus
Fax: +375 (17) 278 28 22,
Phone: +375 (17) 278 07 11, 212 24 70, 212 24 61,
212 69 16
E-mail: office@bms.by
URL: www.bms.by
Limiting parameters values Tamb=25C
Title Measurements
condition
Notation Meaning
Measu
r-ement
unit
Supply voltage
Vs
4.5
5.5
W
Power current
Is
0.8
Transition temperature
T
J
100
C
Storage temperature
Tstg
-25.
.+85
C
Operating temperature
Tamb
-25
+85
C
Power consumption
(Tamb = 85 C)
Ptot
50
mW
Basic characteristics Tamb=25C
Title Measurements
conditions
Notation MIN
TYP
MAX
Meas-
uremet
unit.
Current consumtion
(Output 2)
Vs = 5 V, Ev = 0
I
SD
0.4
0.5
0.8
mA
Current consumption
(Output 2)
Vs = 5 V, Ev = 40 klx,
sun light
I
SH
-
1.0
-
mA
Transmission
distance
Ev = 0, test signal, IR-diode
TSIP5201,
lp = 1.5 A
d -
32
-
m
Output voltage of low level
(Output 3)
I
OSL
= 0.5 , = 0.5 mW/M
2
,
f=fo,t
PI
/N=0,4 Test signal
V
OSL
- - 250
mW
Minimum density of IR-
radiating power*
t
PO
=t
PI
160
Test signal
Eemin 0.6 0.4 -
mW/m
2
Maximum radiation
Test signal
Eemax
-
-
20
W/m
2
* - accordance with customer order programming of subcarrier frequency can be fulfilled
(PCM) F
O
in range of(36-40) Hz
i r c u i t c o n n e c t i o n .
ILMS5360
2
1
3
4.7
F*
)
330
)
> 10
opflonal
C
+ 5V
+ 5V
*) - it is necessary only for power source interference suppression + 5V.
ILMS5380
Korzhenevskogo 12, Minsk, 220108, Republic of
Belarus
Fax: +375 (17) 278 28 22,
Phone: +375 (17) 278 07 11, 212 24 70, 212 24 61,
212 69 16
E-mail: office@bms.by
URL: www.bms.by
I n p u t t e s t s i g n a l
~ ~
~ ~
t
E
0
T=2,5 t
PI
t
PI
t
PI
=1/F
0
I n p u t s i g n a l
t
V
0
V
0L
V
0H
t
PO
=t
PI
+ 160
mcs
E
rel
, %
100
90
80
70
60
50
40
30
20
10
0
0.75
0.8
0.9
1.0
1.1
1.2
f/f
0
S
rel
, %
100
90
80
70
60
50
40
30
20
10
0
0.65
0.7
0.8
0.9
1.0
1.1
, mkm
Figure 1 - Dependence of sensitivity as function
of normalized frequency, Tamb = 25
C (ampli-
tude-frequency response).
Figure 2 - Dependence of sensitivity on IR-
radiation wave length by Tamb = 25
C (spectral
response).
ILMS5380
Korzhenevskogo 12, Minsk, 220108, Republic of
Belarus
Fax: +375 (17) 278 28 22,
Phone: +375 (17) 278 07 11, 212 24 70, 212 24 61,
212 69 16
E-mail: office@bms.by
URL: www.bms.by
E
emin
, mW/m
2
0.5
0.4
0.3
0.2
0.1
-30
0
30
60
90
Tamb, C
Figure 3 - Dependence of IR radiation minimum power density parameter on environment tem-
perature (microcircuit sensibility) by Us = 5.
) vertical direction
b) horizontal direction
Figure 4 - Dependence of relative sensitivity on infra-red source angle turn.
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