IN74HC393
1
D
UAL
4-S
TAGE
B
INARY
R
IPPLE
C
OUNTER
High-Performance Silicon-Gate CMOS
The IN74HC393 is identical in pinout to the LS/ALS393. The
device inputs are compatible with standard CMOS outputs; with
pullup resistors, they are compatible with LS/ALSTTL outputs.
This device consists of two independent 4-bit binary ripple
counters with parallel outputs from each counter stage. A
џ256
counter can be obtained by cascading the two binary counters.
Internal flip-flops are triggered by high-to-low transitions of the
clock input. Reset for the counters is asynchronous and active-
high. State changes of the Q outputs do not occur
simultaneously becaue of internal ripple delays. Therefore,
decoded output signals are subject to decoding spikes and
should not be used as clocks or as strobes except when gated
with the Clock of the IN74HC393.
ћ Outputs Directly Interface to CMOS, NMOS, and TTL
ћ Operating Voltage Range: 2.0 to 6.0 V
ћ Low Input Current: 1.0 A
ћ High Noise Immunity Characteristic of CMOS Devices
ORDERING INFORMATION
IN74HC393N Plastic
IN74HC393D SOIC
T
A
= -55
њ to 125њ C for all
packages
LOGIC DIAGRAM
PIN 14 =V
CC
PIN 7 = GND
PIN ASSIGNMENT
FUNCTION TABLE
Inputs Outputs
Clock Reset
X H
L
H L
No
Change
L L
No
Change
L
No
Change
L
Advance
to
Next State
X = don't care
IN74HC393
2
MAXIMUM RATINGS
*
Symbol Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
-0.5 to +7.0
V
V
IN
DC Input Voltage (Referenced to GND)
-1.5 to V
CC
+1.5
V
V
OUT
DC Output Voltage (Referenced to GND)
-0.5 to V
CC
+0.5
V
I
IN
DC Input Current, per Pin
20
mA
I
OUT
DC Output Current, per Pin
25
mA
I
CC
DC Supply Current, V
CC
and GND Pins
50
mA
P
D
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
mW
Tstg
Storage Temperature
-65 to +150
њC
T
L
Lead Temperature, 1 mm from Case for 10
Seconds
(Plastic DIP or SOIC Package)
260
њC
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/
њC from 65њ to 125њC
SOIC Package: : - 7 mW/
њC from 65њ to 125њC
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
V
IN
, V
OUT
DC Input Voltage, Output Voltage (Referenced to
GND)
0 V
CC
V
T
A
Operating Temperature, All Package Types
-55
+125
њC
t
r
, t
f
Input Rise and Fall Time (Figure
1)
V
CC
=2.0 V
V
CC
=4.5 V
V
CC
=6.0 V
0
0
0
1000
500
400
ns
This device contains protection circuitry to guard against damage due to high static
voltages or electric fields. However, precautions must be taken to avoid applications of any voltage
higher than maximum rated voltages to this high-impedance circuit. For proper operation, V
IN
and
V
OUT
should be constrained to the range GND
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