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Электронный компонент: IN74HCT32A

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IN74HCT32A
1
Q
UAD
2-I
NPUT
OR
G
ATE
High-Performance Silicon-Gate CMOS
The IN74HCT32A may be used as a level converter for
interfacing TTL or NMOS outputs to High-Speed CMOS inputs.
The IN74HCT32A is identical in pinout to the LS/ALS32.
TTL/NMOS-Compatible Input Levels.
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 4.5 to 5.5 V
Low Input Current: 1.0 A
ORDERING INFORMATION
IN74HCT32AN Plastic
IN74HCT32AD SOIC
T
A
= -55
to 125 C for all
packages
LOGIC DIAGRAM
PIN 14 =V
CC
PIN 7 = GND
PIN ASSIGNMENT
FUNCTION TABLE
Inputs Output
A B Y
L L L
L H H
H L H
H H H
IN74HCT32A
2
MAXIMUM RATINGS
*
Symbol Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
-0.5 to +7.0
V
V
IN
DC Input Voltage (Referenced to GND)
-1.5 to V
CC
+1.5
V
V
OUT
DC Output Voltage (Referenced to GND)
-0.5 to V
CC
+0.5
V
I
IN
DC Input Current, per Pin
20
mA
I
OUT
DC Output Current, per Pin
25
mA
I
CC
DC Supply Current, V
CC
and GND Pins
50
mA
P
D
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
mW
Tstg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature, 1 mm from Case for 10
Seconds
(Plastic DIP or SOIC Package)
260
C
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/
C from 65 to 125C
SOIC Package: : - 7 mW/
C from 65 to 125C

RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
4.5
5.5
V
V
IN
, V
OUT
DC Input Voltage, Output Voltage (Referenced to
GND)
0 V
CC
V
T
A
Operating Temperature, All Package Types
-55
+125
C
t
r
, t
f
Input Rise and Fall Time (Figure 1)
0
500
ns


This device contains protection circuitry to guard against damage due to high static
voltages or electric fields. However, precautions must be taken to avoid applications of any voltage
higher than maximum rated voltages to this high-impedance circuit. For proper operation, V
IN
and
V
OUT
should be constrained to the range GND
(V
IN
or V
OUT
)
V
CC
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or
V
CC
). Unused outputs must be left open.
IN74HCT32A
3
DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND)
V
CC
Guaranteed
Limit
Symbol Parameter
Test
Conditions
V 25
C
to
-55
C
85
C
125
C
Unit
V
IH
Minimum
High-
Level Input
Voltage
V
OUT
= V
CC
-0.1 V
I
OUT
20 A
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
V
V
IL
Maximum Low -
Level Input
Voltage
V
OUT
=0.1 V or V
CC
-0.1 V
I
OUT
20 A
4.5
5.5
0.8
0.8
0.8
0.8
0.8
0.8
V
V
OH
Minimum
High-
Level Output
Voltage
V
IN
=V
IH
or V
IL
I
OUT
20 A
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
V
IN
=V
IH
or V
IL
I
OUT
4.0 mA
I
OUT
5.2 mA
4.5
3.98
3.84
3.7
V
OL
Maximum
Low-
Level Output
Voltage
V
IN
= V
IL
I
OUT
20 A
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
IL
I
OUT
4.0 mA
I
OUT
5.2 mA
4.5
0.26
0.33
0.4
I
IN
Maximum
Input
Leakage Current
V
IN
=V
CC
or GND
5.5
0.1
1.0
1.0
A
I
CC
Maximum
Quiescent Supply
Current
(per Package)
V
IN
=V
CC
or GND
I
OUT
=0
A
5.5 1.0 10 40
A
I
CC
Additional
Quiescent Supply
Current
V
IN
=2.4 V, Any One
Input
-55
C
25
C to 125 C
mA
V
IN
=V
CC
or GND,
Other Input
I
OUT
= 0
A
5.5 2.9
2.4
IN74HCT32A
4
AC ELECTRICAL CHARACTERISTICS(V
CC
=5.0 V
10%, C
L
=50pF,Input t
r
=t
f
=6.0 ns)
Guaranteed
Limits
Symbol Parameter 25
C to
-55
C
85C
125C
Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, Input
A or B to Output Y (Figures 1 and
2)
20 25 30
ns
t
TLH
, t
THL
Maximum Output Transition Time,
Any Output (Figures 1 and 2)
15 19 22
ns
C
IN
Maximum Input Capacitance
10
10
10
pF
Power Dissipation Capacitance
(Per Gate)
Typical @25
C,V
CC
=5.0 V
C
PD
Used to determine the no-load
dynamic power consumption:
P
D
=C
PD
V
CC
2
f+I
CC
V
CC
15 pF



Figure 1 Switching Waveforms. Figure 2. Test Circuit



EXPANDED LOGIC DIAGRAM
(1/4 of the Device)