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Электронный компонент: A28F200BRB-80

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E
ADVANCE INFORMATION
April 1997
Order Number: 290542-003
n
Intel SmartVoltage Technology
5V or 12V Program/Erase
5V Read Operation
n
Very High Performance Read
80 ns Max. Access Time,
40 ns Max. Output Enable Time
n
Low Power Consumption
Maximum 65 mA Read Current at 5V
n
x8/x16-Selectable Input/Output Bus
High Performance 16- or 32-bit
CPUs
n
Optimized Array Blocking Architecture
One 16-KB Protected Boot Block
Two 8-KB Parameter Blocks
One 96-KB Main Block
One 128-KB Main Block
Top or Bottom Boot Locations
n
Hardware-Protection for Boot Block
n
Software EEPROM Emulation with
Parameter Blocks
n
Automotive Temperature Operation
-40C to +125C
n
Extended Cycling Capability
30,000 Block Erase Cycles for
Parameter Blocks
1,000 Block Erase Cycles for Main
Blocks
n
Automated Word/Byte Program and
Block Erase
Industry-Standard Command User
Interface
Status Registers
Erase Suspend Capability
n
SRAM-Compatible Write Interface
n
Automatic Power Savings Feature
1 mA Typical I
CC
Active Current in
Static Operation
n
Reset/Deep Power-Down Input
0.2 A I
CC
Typical
Provides Reset for Boot Operations
n
Hardware Data Protection Feature
Program/Erase Lockout during
Power Transitions
n
Industry-Standard Surface Mount
Packaging
44-Lead PSOP: JEDEC ROM
Compatible
n
ETOXTM IV Flash Technology
A28F200BR-T/B
2-MBIT (128K X 16, 256K X 8)
SmartVoltage BOOT BLOCK
FLASH MEMORY FAMILY
Automotive
Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or
otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of
Sale for such products, Intel assumes no liability whatsoever, and Intel disclaims any express or implied warranty, relating to
sale and/or use of Intel products including liability or warranties relating to fitness for a particular purpose, merchantability, or
infringement of any patent, copyright or other intellectual property right. Intel products are not intended for use in medical, life
saving, or life sustaining applications.
Intel may make changes to specifications and product descriptions at any time, without notice.
The A28F200BR-T/B may contain design defects or errors known as errata which may cause the product to deviate from
published specifications. Current characterized errata are available upon request.
Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be
obtained from:
Intel Corporation
P.O. Box 7641
Mt. Prospect, IL 60056-7641
or call 1-800-879-4683
or visit Intel's website at http:\\www.intel.com
COPYRIGHT INTEL CORPORATION, 1996, 1997
CG-041493
*Third-party brands and names are the property of their respective owners.
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A28F200BR
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ADVANCE INFORMATION
CONTENTS
PAGE
PAGE
1.0 PRODUCT FAMILY OVERVIEW.....................5
1.1 New Features in the
SmartVoltage Products ...............................5
1.2 Main Features ..............................................5
1.3 Applications..................................................6
1.4 Pinouts.........................................................6
1.5 Pin Descriptions ...........................................8
2.0 PRODUCT DESCRIPTON...............................9
2.1 Memory Organization ...................................9
2.1.1 Boot Block .............................................9
2.1.2 Parameter Blocks ................................10
2.1.3 Main Blocks .........................................10
3.0 PRODUCT FAMILY PRINCIPLES OF
OPERATION ................................................10
3.1 Bus Operations ..........................................12
3.2 Read Operations ........................................12
3.2.1 Read Array ..........................................12
3.2.2 Intelligent Identifiers ............................12
3.3 Write Operations ........................................12
3.3.1 Command User Interface.....................12
3.3.2 Status Register....................................15
3.3.3 Program Mode.....................................16
3.3.4 Erase Mode .........................................17
3.4 Boot Block Locking ....................................20
3.4.1 V
PP
= V
IL
for Complete Protection .......20
3.4.2 WP# = V
IL
for Boot Block Locking .......21
3.4.3 RP# = V
HH
or WP# = V
IH
for
Boot Block Unlocking .........................21
3.5 Power Consumption ...................................21
3.5.1 Active Power .......................................21
3.5.2 Automatic Power Savings ....................21
3.5.3 Standby Power ....................................21
3.5.4 Deep Power-Down Mode.....................21
3.6 Power-Up Operation...................................22
3.6.1 RP# Connected to System Reset ........22
3.7 Power Supply Decoupling ..........................22
3.7.1 V
PP
Trace on Printed Circuit Boards ....22
3.7.2 V
CC
, V
PP
and RP# Transitions .............22
4.0 ABSOLUTE MAXIMUM RATINGS ................23
5.0 OPERATING CONDITIONS ..........................24
5.1 V
CC
Voltage................................................24
5.2 DC Characteristics .....................................25
5.3 AC Characteristics......................................29
APPENDIX A: Ordering Information .................36
APPENDIX B: Additional Information ...............37
A28F200BR
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ADVANCE INFORMATION
REVISION HISTORY
Number
Description
-001
Original Version
-002
Changed RP# AC Characteristics
Changed V
LKO
to 3.5V
-003
Parameter Block Cycling Specification Increased to 30,000
I
CCD
Specification Increased to 105 A
I
CCR
Specification Increased to 65 mA
t
WHAX
Specification changed from 10 ns to 0 ns
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A28F200BR
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ADVANCE INFORMATION
1.0
PRODUCT FAMILY OVERVIEW
This datasheet contains the specifications for the
automotive version of the 28F200BR family of boot
block flash memory devices.
This device continues to offer the same
functionality as earlier "BX" devices but adds the
capability of performing program and erase
operations with a 5V or 12V V
PP
. The A28F200BR
automatically senses which voltage is applied to
the V
PP
pin and adjusts its operation accordingly.
1.1
New Features in the
SmartVoltage Products
The new SmartVoltage boot block flash memory
family offers identical operation as the current
BX/BL 12V program products, except for the
differences listed below. All other functions are
equivalent to current products, including
signatures, write commands, and pinouts.
WP# pin has replaced a DU pin. See Table 1
for details.
5V program/erase operation has been added
that uses proven program and erase
techniques with 5V 10% applied to V
PP.
If you are designing with existing BX 12V V
PP
boot
block products today, you should provide the
capability in your board design to upgrade to these
new SmartVoltage products.
Follow these guidelines to ensure compatibilty:
1.
Connect WP# (DU on existing products) to a
control signal, V
CC
or GND.
2.
If adding a switch on V
PP
for write protection,
switch to GND for complete write protection.
3.
Allow for connecting 5V to V
PP
instead of 12V,
if desired.
1.2
Main Features
Intel's SmartVoltage technology provides the most
flexible voltage solution in the industry.
SmartVoltage provides two discrete voltage supply
pins, V
CC
for read operation, and V
PP
for program
and erase operation. Discrete supply pins allow
system designers to use the optimal voltage levels
for their design. For program and erase
operations, 5V V
PP
operation eliminates the need
for in system voltage converters, while 12V V
PP
operation provides faster program and erase for
situations where 12V is available, such as
manufacturing or designs where 12V is already
available.
The 28F200 boot block flash memory family is a
very high-performance, 2-Mbit (2,097,152 bit) flash
memory family organized as either 256 Kwords
(131,072 words) of 16 bits each or 512 Kbytes
(262,144 bytes) of 8 bits each.
Separately erasable blocks, including a hardware-
lockable boot block (16,384 bytes), two parameter
blocks (8,192 Bytes each) and main blocks (one
block of 98,304 bytes and one block of 131,072
bytes) define the boot block flash family
architecture. See Figure 3 for memory maps. Each
parameter block can be independently erased and
programmed 10,000 times. Each main block can
be erased 1,000 times.
The boot block is located at either the top
(denoted by -T suffix) or the bottom (-B suffix) of
the address map in order to accommodate
different microprocessor protocols for boot code
location. The hardware-lockable boot block
provides complete code security for the kernel
code required for system initialization. Locking and
unlocking of the boot block is controlled by WP#
and/or RP# (see Section 3.4 for details).
The Command User Interface (CUI) serves as the
interface between the microprocessor or
microcontroller and the internal operation of the
boot block flash memory products. The internal
Write State Machine (WSM) automatically
executes the algorithms and timings necessary for
program and erase operations, including
verifications, thereby unburdening the
microprocessor or microcontroller of these tasks.
The Status Register (SR) indicates the status of
the WSM and whether it successfully completed
the desired program or erase operation.
Program and erase automation allows program
and erase operations to be executed using an
industry-standard two-write command sequence to
the CUI. Data writes are performed in word or byte
increments. Each byte or word in the flash
memory can be programmed independently of
other memory locations, unlike erases, which
erase all locations within a block simultaneously.
The 4-Mbit SmartVoltage boot block flash memory
family is also designed with an Automatic Power
A28F200BR
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ADVANCE INFORMATION
Savings (APS) feature which minimizes system
battery current drain, allowing for very low power
designs. To provide even greater power savings,
the boot block family includes a deep power-down
mode which minimizes power consumption by
turning most of the flash memory's circuitry off.
This mode is controlled by the RP# pin and its
usage is discussed in Section 3.5, along with other
power consumption issues.
Additionally, the RP# pin provides protection
against unwanted command writes due to invalid
system bus conditions that may occur during
system reset and power-up/down sequences.
Also, when the flash memory powers-up, it
automatically defaults to the read array mode, but
during a warm system reset, where power
continues uniterrupted to the system components,
the flash memory could remain in a non-read
mode, such as erase. Consequently, the system
Reset pin should be tied to RP# to reset the
memory to normal read mode upon activation of
the Reset pin.
The byte-wide or word-wide input/output is
controlled by the BYTE# pin. See Table 1 for a
detailed description of BYTE# operations,
especially the usage of the DQ
15
/A
-1
pin.
The 28F200 products are available in a
ROM/EPROM-compatible pinout and housed in
the 44-lead PSOP (Plastic Small Outline)
package.
Refer to the DC Characteristics Table, Section 5.2
for complete current and voltage specifications.
Refer to the AC Characteristics Table, Section
5.3, for read, program and erase performance
specifications.
1.3
Applications
The 2-Mbit boot block flash memory family
combines high-density, low-power, high-
performance, cost-effective flash memories with
blocking and hardware protection capabilities.
Their flexibility and versatility reduce costs
throughout the product life cycle. Flash memory is
ideal for Just-In-Time production flow, reducing
system inventory and costs, and eliminating
component handling during the production phase.
When the product is in the end-user's hands, and
updates or feature enhancements become
necessary or mandatory, flash memory eliminates
the need to replace an assembly. The update can
be performed as part of routine maintenance
operation by relatively unsophisticated
technicians.
The reliability of such a field upgrade is enhanced
by a hardware-protected 16-Kbyte boot block. If
the protection methods are implemented in the
circuit design, the boot block will be
unchangeable. Locating the boot-strap code in this
area assures a fail-safe recovery from an update
operation that failed to complete correctly.
The two 8-Kbyte parameter blocks allow
modification of control algorithms to reflect
changes in the process or device being controlled.
A variety of software algorithms allow these two
blocks to behave like a standard EEPROM.
Intel's boot block architecture provides a flexible
voltage solution for the different design needs of
various applications. The asymmetrically-blocked
memory map allows the integration of several
memory components into a single flash device.
The boot block provides a secure boot PROM; the
parameter blocks can emulate EEPROM
functionality for parameter store with proper
software techniques; and the main blocks provide
code and data storage with access times fast
enough to execute code in place, decreasing RAM
requirements.
1.4
Pinouts
Intel's SmartVoltage boot block architecture
provides upgrade paths in every package pinout to
the 8-Mbit density. The 28F200 44-lead PSOP
pinout follows the industry standard ROM/EPROM
pinout as shown in Figure 2.
Pinouts for the corresponding 4-Mbit and 8-Mbit
components are also provided for convenient
reference. 2-Mbit pinouts are given on the chip
illustration in the center, with 2-Mbit and 8-Mbit
pinouts going outward from the center.
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A28F200BR
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ADVANCE INFORMATION
A[1:17]
CS#
RD#
WR#
D[0:15]
A[0:16]
CE#
OE#
WE#
DQ[0:15]
Intel386TM EX
Microprocessor
GPIO
GPIO
RESET#
PWRGOOD
PLD
Intel
28F200-T
RP#
V
GPIO
RESET#
WP#
BYTE#
5V
5V
PP
PLD
Transceiver
0542-01
Figure 1. 28F200BX Interface to Intel386TM Microprocessor
AB28F200
44-Lead PSOP
0.525" x 1.110"
TOP VIEW
GND
WE#
RP#
BYTE#
A
8
A
9
A
11
A
12
A
13
A
14
A
16
DQ
7
DQ
14
DQ
6
DQ
13
DQ
12
DQ
4
V
CC
DQ
5
A
10
A
15
32
31
30
29
28
27
26
25
24
23
33
34
35
36
37
38
39
40
41
42
43
44
CE#
WP#
GND
OE#
A
7
A
5
A
6
A
4
A
3
A
2
A
1
A
0
DQ
0
DQ
8
DQ
1
DQ
9
DQ
2
DQ
10
DQ
3
DQ
11
22
21
20
19
17
18
1
2
3
4
5
6
7
8
9
10
11
12
13
14
16
15
V
PP
NC
CE#
WP#
GND
OE#
A
7
A
5
A
6
A
4
A
3
A
2
A
1
A
0
DQ
0
DQ
8
DQ
1
DQ
9
DQ
2
DQ
10
DQ
3
DQ
11
V
PP
GND
WE#
RP#
BYTE#
A
8
A
9
A
11
A
12
A
13
A
14
A
16
DQ
7
DQ
14
DQ
6
DQ
13
DQ
12
DQ
4
V
CC
DQ
5
A
10
A
15
28F400
28F400
DQ
15
-1
/A
DQ
15
-1
/A
CE#
GND
OE#
A
7
A
5
A
6
A
4
A
3
A
2
A
1
A
0
DQ
0
DQ
8
DQ
1
DQ
9
DQ
2
DQ
10
DQ
3
DQ
11
V
PP
28F800
GND
WE#
RP#
BYTE#
A
8
A
9
A
11
A
12
A
13
A
14
A
16
DQ
7
DQ
14
DQ
6
DQ
13
DQ
12
DQ
4
V
CC
DQ
5
A
10
A
15
28F800
DQ
15
-1
/A
A
17
A
17
A
18
0542_02
NOTE:
Pin 2 is DU for BX 12V V
PP
Versions.
Figure 2. 44-Lead PSOP Lead Configuration for x8/x16 28F200 Is Compatible with 4 and 8 Mbit.
A28F200BR
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ADVANCE INFORMATION
1.5
Pin Descriptions
Table 1. 28F200 Pin Descriptions
Symbol
Type
Name and Function
A
0
- A
16
INPUT
ADDRESS INPUTS for memory addresses. Addresses are internally
latched during a write cycle.
A
9
INPUT
ADDRESS INPUT: When A
9
is at V
HH
the signature mode is accessed.
During this mode, A
0
decodes between the manufacturer and device IDs.
When BYTE# is at a logic low, only the lower byte of the signatures are
read. DQ
15
/A
-1
is a don't care in the signature mode when BYTE# is low.
DQ
0
-DQ
7
INPUT/OUTPUT DATA INPUTS/OUTPUTS: Inputs array data on the second CE# and
WE# cycle during a Program command. Inputs commands to the
Command User Interface when CE# and WE# are active. Data is
internally latched during the Write cycle. Outputs array, Intelligent
Identifier and Status Register data. The data pins float to tri-state when
the chip is de-selected or the outputs are disabled.
DQ
8
-DQ
15
INPUT/OUTPUT DATA INPUTS/OUTPUTS: Inputs array data on the second CE# and
WE# cycle during a Program command. Data is internally latched during
the Write cycle. Outputs array data. The data pins float to tri-state when
the chip is de-selected or the outputs are disabled as in the byte-wide
mode (BYTE# = "0"). In the byte-wide mode DQ
15
/A
-1
becomes the lowest
order address for data output on DQ
0
-DQ
7
.
CE#
INPUT
CHIP ENABLE: Activates the device's control logic, input buffers,
decoders and sense amplifiers. CE# is active low. CE# high de-selects
the memory device and reduces power consumption to standby levels. If
CE# and RP# are high, but not at a CMOS high level, the standby current
will increase due to current flow through the CE# and RP# input stages.
OE#
INPUT
OUTPUT ENABLE: Enables the device's outputs through the data buffers
during a read cycle. OE# is active low.
WE#
INPUT
WRITE ENABLE: Controls writes to the Command Register and array
blocks. WE# is active low. Addresses and data are latched on the rising
edge of the WE# pulse.
RP#
INPUT
RESET/DEEP POWER-DOWN: Uses three voltage levels (V
IL
, V
IH
, and
V
HH
) to control two different functions: reset/deep power-down mode and
boot block unlocking. It is backwards-compatible with the 28F200BX/BL.
When RP# is at logic low, the device is in reset/deep power-down
mode, which puts the outputs at High-Z, resets the Write State Machine,
and draws minimum current.
When RP# is at logic high, the device is in standard operation. When
RP# transitions from logic-low to logic-high, the device defaults to the
read array mode.
When RP# is at V
HH
, the boot block is unlocked and can be
programmed or erased. This overides any control from the WP# input.
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A28F200BR
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ADVANCE INFORMATION
Table 1. 28F200 Pin Descriptions (Continued)
Symbol
Type
Name and Function
WP#
INPUT
WRITE PROTECT: Provides a method for unlocking the boot block in a
system without a 12V supply.
When WP# is at logic low, the boot block is locked, preventing
program and erase operations to the boot block. If a program or erase
operation is attempted on the boot block when WP# is low, the
corresponding status bit (bit 4 for program, bit 5 for erase) will be set in
the Status Register to indicate the operation failed.
When WP# is at logic high, the boot block is unlocked and can be
programmed or erased.
NOTE: This feature is overridden and the boot block unlocked when RP#
is at V
HH
. See Section 3.4 for details on write protection.
BYTE#
INPUT
BYTE# ENABLE: Controls whether the device operates in the byte-wide
(x8) mode or the word (x16) mode. The BYTE# input must be controlled
at CMOS levels to meet the CMOS current specification in the standby
mode.
When BYTE# is at logic low, the byte-wide mode is enabled. A 19-bit
address is applied on A
-1
to
A
17
, and 8 bits of data is read and written on
DQ
0
-DQ
7
.
When BYTE# is at logic high, the word-wide mode is enable. An 18-bit
address is applied on A
0
to A
17
and 16 bits of data is read and written on
DQ
0
- DQ
15
.
V
CC
DEVICE POWER SUPPLY: 5.0V
10%
V
PP
PROGRAM/ERASE POWER SUPPLY: For erasing memory array blocks
or programming data in each block, a voltage either of 5V
10% or 12V
5% must be applied to this pin. When V
PP
< V
PPLK
all blocks are locked
and protected against Program and Erase commands.
GND
GROUND: For all internal circuitry.
NC
NO CONNECT: Pin may be driven or left floating.
2.0
PRODUCT DESCRIPTON
2.1
Memory Blocking Organization
This product family features an asymmetrically-
blocked architecture enhancing system memory
integration. Each block can be erased
independently of the others up to 10,000 times. The
block sizes have been chosen to optimize their
functionality for common applications of nonvolatile
storage. For the address locations of the blocks,
see the memory maps in Figure 3.
2.1.1
ONE 16-KB BOOT BLOCK
The boot block is intended to replace a dedicated
boot PROM in a microprocessor or microcontroller-
based system. The 16-Kbyte (16,384 bytes) boot
block is located at either the top (denoted by -T
suffix) or the bottom (-B suffix) of the address map
to accommodate different microprocessor protocols
for boot code location. This boot block features
hardware controllable write-protection to protect the
crucial microprocessor boot code from accidental
erasure. The protection of the boot block is
controlled using a combination of the V
PP
, RP#, and
WP# pins, as is detailed in Table 8.
A28F200BR
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ADVANCE INFORMATION
2.1.2
TWO 8-KB PARAMETER BLOCKS
The boot block architecture includes parameter
blocks to facilitate storage of frequently updated
small parameters that would normally require an
EEPROM. By using software techniques, the byte-
rewrite functionality of EEPROMs can be emulated.
These techniques are detailed in Intel's AP-604,
"Using Intel's Boot Block Flash Memory Parameter
Blocks to Replace EEPROM." Each boot block
component contains two parameter blocks of eight
Kbytes (8,192 bytes) each. The parameter blocks
are not write-protectable.
2.1.3
ONE 96-KB + THREE 128-KB MAIN
BLOCKS
After the allocation of address space to the boot
and parameter blocks, the remainder is divided into
main blocks for data or code storage. Each 2-Mbit
device contains one 96-Kbyte (98,304 byte) block
and one 128-Kbyte (131,072 byte) block. See the
memory maps for each device for more information.
3.0
PRODUCT FAMILY PRINCIPLES
OF OPERATION
Flash memory augments EPROM functionality with
in-circuit electrical program and erase. The boot
block flash family utilizes a Command User
Interface (CUI and automated algorithms to simplify
program and erase operations. The CUI allows for
100% TTL-level control inputs, fixed power supplies
during erasure and programming, and maximum
EPROM compatibility.
When V
PP
< V
PPLK
, the device will only successfully
execute the following commands: Read Array,
Read Status Register, Clear Status Register and
intelligent identifier mode. The device provides
standard EPROM read, standby and output disable
operations. Manufacturer identification and device
Identification data can be accessed through the CUI
or through the standard EPROM A
9
high voltage
access (V
ID
) for PROM programming equipment.
The same EPROM read, standby and output
disable functions are available when 5V or 12V is
applied to the V
PP
pin. In addition, 5V or 12V on
V
PP
allows program and erase of the device. All
functions associated with altering memory contents:
Program and Erase, Intelligent Identifier Read, and
Read Status are accessed via the CUI.
The purpose of the Write State Machine (WSM) is
to completely automate the programming and
erasure of the device. The WSM will begin
operation upon receipt of a signal from the CUI and
will report status back through a Status Register.
The CUI will handle the WE# interface to the data
and address latches, as well as system software
requests for status while the WSM is in operation.
28F200-B
128-Kbyte MAIN BLOCK
8-Kbyte PARAMETER BLOCK
16-Kbyte BOOT BLOCK
8-Kbyte PARAMETER BLOCK
96-Kbyte MAIN BLOCK
00000H
0FFFFH
10000H
1BFFFH
1C000H
1CFFFH
1D000H
1DFFFH
1E000H
1FFFFH
28F200-T
128-Kbyte MAIN BLOCK
8-Kbyte PARAMETER BLOCK
16-Kbyte BOOT BLOCK
8-Kbyte PARAMETER BLOCK
96-Kbyte MAIN BLOCK
1FFFFH
10000H
0FFFFH
04000H
03FFFH
03000H
02FFFH
02000H
01FFFH
00000H
0542-03
Figure 3. 28F200-T/B Memory Maps
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A28F200BR
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ADVANCE INFORMATION
Table 2. Bus Operations for Word-Wide Mode (BYTE# = V
IH
)
Mode
Notes
RP#
CE#
OE#
WE#
A
9
A
0
V
PP
DQ
0-15
Read
1,2,3
V
IH
V
IL
V
IL
V
IH
X
X
X
D
OUT
Output Disable
V
IH
V
IL
V
IH
V
IH
X
X
X
High Z
Standby
V
IH
V
IH
X
X
X
X
X
High Z
Deep Power-Down
9
V
IL
X
X
X
X
X
X
High Z
Intelligent Identifier (Mfr)
4
V
IH
V
IL
V
IL
V
IH
V
ID
V
IL
X
0089 H
Intelligent Identifier
(Device)
4,5
V
IH
V
IL
V
IL
V
IH
V
ID
V
IH
X
See Table 4
Write
6,7,8
V
IH
V
IL
V
IH
V
IL
X
X
X
D
IN
Table 3. Bus Operations for Byte-Wide Mode (BYTE# = V
IL
)
Mode
Notes
RP#
CE#
OE#
WE#
A
9
A
0
A
-1
V
PP
DQ
0-7
DQ
8-14
Read
1,2,3
V
IH
V
IL
V
IL
V
IH
X
X
X
X
D
OUT
High Z
Output Disable
V
IH
V
IL
V
IH
V
IH
X
X
X
X
High Z
High Z
Standby
V
IH
V
IH
X
X
X
X
X
X
High Z
High Z
Deep Power-
Down
9
V
IL
X
X
X
X
X
X
X
High Z
High Z
Intelligent
Identifier (Mfr)
4
V
IH
V
IL
V
IL
V
IH
V
ID
V
IL
X
X
89H
High Z
Intelligent
Identifier
(Device)
4,5
V
IH
V
IL
V
IL
V
IH
V
ID
V
IH
X
X
See
Table 4
High Z
Write
6,7,8
V
IH
V
IL
V
IH
V
IL
X
X
X
X
D
IN
High Z
NOTES:
1. Refer to DC Characteristics.
2. X can be V
IL
, V
IH
for control pins and addresses, V
PPLK
or V
PPH
for V
PP
.
3. See DC Characteristics for V
PPLK
, V
PPH
1, V
PPH
2, V
HH
, V
ID
voltages.
4. Manufacturer and Device codes may also be accessed via a CUI write sequence, A
1
-A
17
= X, A
1
-A
18
= X.
5. See Table 4 of Device IDs.
6. Refer to Table 5 for valid D
IN
during a write operation.
7. Command writes for Block Erase or Word/ByteProgram are only executed when V
PP
= V
PPH
1 or V
PPH
2.
8. To program or erase the boot block, hold RP# at V
HH
or WP# at V
IH
.
9. RP# must be at GND
0.2V to meet the maximum deep power-down current specified.
A28F200BR
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ADVANCE INFORMATION
3.1
Bus Operations
Flash memory reads, erases and programs in-
system via the local CPU. All bus cycles to or from
the flash memory conform to standard
microprocessor bus cycles. These bus operations
are summarized in Tables 2 and 3.
3.2
Read Operations
The boot block flash device has three user read
modes: array, intelligent identifier, and status
register. Status register read mode will be
discussed, in detail, in Section 3.3.2.
3.2.1
READ ARRAY
When RP# transitions from V
IL
(reset) to V
IH
, the
device will be in the read array mode and will
respond to the read control inputs (CE#, address
inputs, and OE#) without any commands being
written to the CUI.
When the device is in the read array mode, five
control signals must be controlled to obtain data at
the outputs.
WE# must be logic high (V
IH
)
CE# must be logic low (V
IL
)
OE must be logic low (V
IL
)
RP# must be logic high (V
IH
)
BYTE# must be logic high or logic low.
In addition, the address of the desired location must
be applied to the address pins. Refer to Figures 10
and 11 for the exact sequence and timing of these
signals.
If the device is not in read array mode, as would be
the case after a program or erase operation, the
Read Mode command (FFH) must be written to the
CUI before reads can take place.
3.2.1.1
Output Control
With OE# at logic-high level (V
IH
), the output from
the device is disabled and data Input/Output pins
(DQ[0:15] or DQ[0:7]) are tri-stated.
3.2.1.2
Input Control
With WE# at logic-high level (V
IH
), input to the
device is disabled.
3.2.2
INTELLIGENT IDENTIFIERS
The intelligent identifiers of the SmartVoltage boot
block components are identical to the boot block
products that operate only at 12V V
PP
. The
manufacturer and device codes are read via the
CUI or by taking the A
9
pin to V
ID
. Writing 90H to
the CUI places the device into intelligent identifier
read mode. In this mode, A
0
= 0 outputs the
manufacturer's identification code and A
0
= 1
outputs the device code. When BYTE# is at a logic
low, only the lower byte of the above signatures is
read and DQ
15
/A
-1
is a "don't care" during intelligent
identifier mode. See the table below for product
signatures. A Read Array command must be written
to the memory to return to the read array mode.
Table 4. Intelligent Identifier Table
Product
Mfr. ID
Device ID
-T
(Top Boot)
-B
(Bottom Boot)
28F200
0089 H
2274 H
2275 H
3.3
Write Operations
3.3.1
COMMAND USER INTERFACE (CUI)
The Command User Interface (CUI) serves as the
interface between the microprocessor and the
internal chip controller. Commands are written to
the CUI using standard microprocessor write
timings. The available commands are Read Array,
Read Intelligent Identifier, Read Status Register,
Clear Status Register, Program and Erase
(summarized in Tables 5 and 6). For Read
commands, the CUI points the read path at either
the array, the intelligent identifier, or the Status
Register depending on the command received. For
Program or Erase commands, the CUI informs the
Write State Machine (WSM) that a program or
erase has been requested. During the execution of
a Program command, the WSM will control the
programming sequences and the CUI will only
respond to status reads. During an erase cycle, the
E
A28F200BR
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ADVANCE INFORMATION
CUI will respond to status reads and erase
suspend. After the WSM has completed its task, it
will set the WSM Status bit to a "1," which will also
allow the CUI to respond to its full command set.
Note that after the WSM has returned control to the
CUI, the CUI will stay in the current command state
until it receives another command.
3.3.1.1
Command Function Description
Device operations are selected by writing specific
commands into the CUI. Table 5 defines the
available commands.
Table 5. Command Set Codes and
Corresponding Device Mode
Command Codes
Device Mode
00
Invalid Reserved
10
Alternate Program Set-
Up
20
Erase Set-Up
40
Program Set-Up
50
Clear Status Register
70
Read Status Register
90
Intelligent Identifier
B0
Erase Suspend
D0
Erase Resume/Erase
Confirm
FF
Read Array
Invalid/Reserved
These are unassigned commands and should not
be used. Intel reserves the right to redefine these
codes for future functions.
Read Array (FFH)
This single write cycle command points the read
path at the array. If the host CPU performs a
CE#/OE#-controlled Read immediately following a
two-write sequence that started the WSM, then the
device will output Status Register contents. If the
Read Array command is given after the Erase
Setup command, the device will reset to read the
array. A two Read Array command sequence (FFH)
is required to reset to Read Array after the Program
Setup command.
Intelligent Identifier (90H)
After this command is executed, the CUI points the
output path to the intelligent identifier circuits. Only
intelligent identifier values at addresses 0 and 1 can
be read (only address A
0
is used in this mode, all
other address inputs are ignored).
Read Status Register (70H)
This is one of the two commands that is executable
while the WSM is operating. After this command is
written, a read of the device will output the contents
of the Status Register, regardless of the address
presented to the device.
The device automatically enters this mode after
program or erase has completed.
Clear Status Register (50H)
The WSM can only set the Program Status and
Erase Status bits in the Status Register to "1," it
cannot clear them to "0."
Two reasons exist for operating the Status Register
in this fashion. The first is synchronization. Since
the WSM does not know when the host CPU has
read the Status Register, it would not know when to
clear the status bits. Secondly, if the CPU is
programming a string of bytes, it may be more
efficient to query the Status Register after
programming the string. Thus, if any errors exist
while programming the string, the Status Register
will return the accumulated error status.
Program Setup (40H or 10H)
This command simply sets the CUI into a state
such that the next write will load the Address and
Data registers. After this command is executed, the
outputs default to the Status Register. A two Read
Array command sequence (FFH) is required to
reset to Read Array after the Program Setup
command.
A28F200BR
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ADVANCE INFORMATION
Table 6. Command Bus Definitions
Notes
First Bus Cycle
Second Bus Cycle
Command
8
Oper
Addr
Data
Oper
Addr
Data
Read Array
1
Write
X
FFH
Intelligent Identifier
2,4
Write
X
90H
Read
IA
IID
Read Status Register
3
Write
X
70H
Read
X
SRD
Clear Status Register
Write
X
50H
Word/Byte Program
6,7
Write
PA
40H
Write
PA
PD
Alternate Word/Byte
Program
6,7
Write
PA
10H
Write
PA
PD
Block Erase/Confirm
5
Write
BA
20H
Write
BA
D0H
Erase Suspend/Resume
Write
X
B0H
Write
X
D0H
ADDRESS
DATA
BA= Block Address
SRD= Status Register Data
IA= Identifier Address
IID= Identifier Data
PA= Program Address
PD= Program Data
X= Don't Care
NOTES:
1.
Bus operations are defined in Tables 2 and 3.
2.
IA = Identifier Address: A
0
=0 for manufacturer code, A
0
=1 for device code.
3.
SRD - Data read from Status Register.
4.
IID = Intelligent Identifier Data. Following the Intelligent Identifier command, two Read operations access manufacturer and
device codes.
5.
BA = Address within the block being erased.
6.
PA = Address to be programmed. PD = Data to be programmed at location WD.
7.
Either 40H or 10H commands is valid.
8.
When writing commands to the device, the upper data bus [DQ
8
-DQ
15
] = X (28F200 only) which is either V
CC
or V
SS
, to
minimize current draw.
Program
The second write after the Program Setup
command, will latch addresses and data. Also, the
CUI initiates the WSM to begin execution of the
program algorithm. The device outputs Status
Register data when OE# is enabled. A Read Array
command is required after programming, to read
array data.
Erase Setup (20H)
Prepares the CUI for the Erase Confirm command.
No other action is taken. If the next command is not
an Erase Confirm command, then the CUI will set
both the Program Status and Erase Status bits of
the Status Register to a "1," place the device into
the Read Status Register state, and wait for another
command.
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A28F200BR
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ADVANCE INFORMATION
Erase Confirm (D0H)
If the previous command was an Erase Setup
command, then the CUI will enable the WSM to
erase, at the same time closing the address and
data latches, and respond only to the Read Status
Register and Erase Suspend commands. While the
WSM is executing, the device will output Status
Register data when OE# is toggled low. Status
Register data can only be updated by toggling
either OE# or CE# low.
Erase Suspend (B0H)
This command is only valid while the WSM is
executing an erase operation, and therefore will
only be responded to during an erase operation.
After this command has been executed, the CUI will
set an output that directs the WSM to suspend
erase operations, and then respond only to Read
Status Register or to the Erase Resume
commands. Once the WSM has reached the
Suspend state, it will set an output into the CUI
which allows the CUI to respond to the Read Array,
Read Status Register, and Erase Resume
commands. In this mode, the CUI will not respond
to any other commands. The WSM will also set the
WSM Status bit to a "1." The WSM will continue to
run, idling in the SUSPEND state, regardless of the
state of all input control pins except RP#, which will
immediately shut down the WSM and the remainder
of the chip, if it is made active. During a suspend
operation, the data and address latches will remain
closed, but the address pads are able to drive the
address into the read path.
Erase Resume (D0H)
This command will cause the CUI to clear the
Suspend state and clear the WSM Status Bit to a
"0," but only if an Erase Suspend command was
previously issued. Erase Resume will not have any
effect under any other conditions.
3.3.2
STATUS REGISTER
The device contains a Status Register which may
be read to determine when a program or erase
operation is complete, and whether that operation
completed successfully. The Status Register may
be read at any time by writing the Read Status
command to the CUI. After writing this command,
all subsequent read operations output data from the
Status Register until another command is written to
the CUI. A Read Array command must be written to
the CUI to return to the read array mode.
The Status Register bits are output on DQ[0:7],
whether the device is in the byte-wide (x8) or word-
wide (x16) mode. In the word-wide mode the upper
byte, DQ[8:15], is set to 00H during a Read Status
command. In the byte-wide mode, DQ[8:14] are tri-
stated and DQ
15
/A
-1
retains the low order address
function.
Important: The contents of the Status Register
are latched on the falling edge of OE# or CE#,
whichever occurs last in the read cycle. This
prevents possible bus errors which might occur if
the contents of the Status Register change while
reading the Status Register. CE# or OE# must be
toggled with each subsequent status read, or the
completion of a program or erase operation will not
be evident from the Status Register.
When the WSM is active, this register will indicate
the status of the WSM, and will also hold the bits
indicating whether or not the WSM was successful
in performing the desired operation.
3.3.2.1
Clearing the Status Register
The WSM sets status bits "3" through "7" to "1," and
clears bits "6" and "7" to "0," but cannot clear status
bits "3" through "5" to "0." Bits 3 through 5 can only
be cleared by the controlling CPU through the use
of the Clear Status Register command. These bits
can indicate various error conditions. By allowing
the system software to control the resetting of these
bits, several operations may be performed (such as
cumulatively programming several bytes or erasing
multiple blocks in sequence). The Status Register
may then be read to determine if an error occurred
during that programming or erasure series. This
adds flexibility to the way the device may be
programmed or erased. To clear the Status
Register, the Clear Status Register command is
written to the CUI. Then, any other command may
be issued to the CUI. Note, again, that before a
read cycle can be initiated, a Read Array command
must be written to the CUI to specify whether the
read data is to come from the Memory Array, Status
Register, or Intelligent Identifier.
A28F200BR
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ADVANCE INFORMATION
3.3.3
PROGRAM MODE
Programing is executed using a two-write
sequence. The Program Setup command is written
to the CUI followed by a second write which
specifies the address and data to be programmed.
The WSM will execute a sequence of internally
timed events to:
1.
Program the desired bits of the addressed
memory word or byte.
2.
Verify that the desired bits are sufficiently
programmed.
Programming of the memory results in specific bits
within a byte or word being changed to a "0."
If the user attempts to program "1"s, there will be no
change of the memory cell content and no error
occurs.
Similar to erasure, the Status Register indicates
whether programming is complete. While the
program sequence is executing, bit 7 of the Status
Register is a "0." The Status Register can be polled
by toggling either CE# or OE# to determine when
the program sequence is complete. Only the Read
Status Register command is valid while
programming is active.
Table 7. Status Register Bit Definition
WSMS
ESS
ES
DWS
VPPS
R
R
R
7
6
5
4
3
2
1
0
NOTES:
SR.7 =WRITE STATE MACHINE STATUS (WSMS)
1 = Ready
0 = Busy
Write State Machine bit must first be checked to
determine Byte/Word program or Block Erase
completion, before the Program or Erase Status
bits are checked for success.
SR.6 = ERASE-SUSPEND STATUS (ESS)
1 = Erase Suspended
0 = Erase In Progress/Completed
When Erase Suspend is issued, WSM halts
execution and sets both WSMS and ESS bits to "1."
ESS bit remains set to "1" until an Erase Resume
command is issued.
SR.5 = ERASE STATUS
1 = Error In Block Erasure
0 = Successful Block Erase
When this bit is set to "1," WSM has applied the
maximum number of erase pulses to the block and
is still unable to successfully verify block erasure.
SR.4 = PROGRAM STATUS
1 = Error in Byte/Word Program
0 = Successful Byte/Word Program
When this bit is set to "1," WSM has attempted but
failed to program a byte or word.
SR.3 = V
PP
STATUS
1 = V
PP
Low Detect, Operation Abort
0 = V
PP
OK
The V
PP
Status bit, unlike an A/D converter, does
not provide continuous indication of V
PP
level. The
WSM interrogates V
PP
level only after the Byte
Program or Erase command sequences have been
entered, and informs the system if V
PP
has not
been switched on. The V
PP
Status bit is not
guaranteed to report accurate feedback between
V
PPLK
and V
PPH
.
SR.2SR.0 = RESERVED FOR FUTURE
ENHANCEMENTS
These bits are reserved for future use and should
be masked out when polling the Status Register.
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A28F200BR
17
ADVANCE INFORMATION
When programming is complete, the status bits,
which indicate whether the program operation was
successful, should be checked. If bit 3 is set to a
"1," then V
PP
was not within acceptable limits, and
the WSM did not execute the programming
sequence. If the program operation fails, Bit 4 of the
Status Register will be set within 3.3 ms as
determined by the timeout of the WSM.
The Status Register should be cleared before
attempting the next operation. Any CUI instruction
can follow after programming is completed;
however, reads from the Memory Array, Status
Register, or Intelligent Identifier cannot be
accomplished until the CUI is given the Read Array
command.
3.3.4
ERASE MODE
Erasure of a single block is initiated by writing the
Erase Setup and Erase Confirm commands to the
CUI, along with the addresses identifying the block
to be erased. These addresses are latched
internally when the Erase Confirm command is
issued. Block erasure results in all bits within the
block being set to "1."
The WSM will execute a sequence of internally
timed events to:
1.
Program all bits within the block to "0."
2.
Verify that all bits within the block are
sufficiently programmed to "0."
3.
Erase all bits within the block.
4.
Verify that all bits within the block are
sufficiently erased.
While the erase sequence is executing, bit 7 of the
Status Register is a "0."
When the Status Register indicates that erasure is
complete, the status bits, which indicate whether
the erase operation was successful, should be
checked. If the erase operation was unsuccessful,
bit 5 of the Status Register will be set to a "1,"
indicating an Erase Failure. If V
PP
was not within
acceptable limits after the Erase Confirm command
is issued, the WSM will not execute an erase
sequence; instead, bit 5 of the Status Register is
set to a "1" to indicate an Erase Failure, and bit 3 is
set to a "1" to identify that V
PP
supply voltage was
not within acceptable limits.
The Status Register should be cleared before
attempting the next operation. Any CUI instruction
can follow after erasure is completed; however,
reads from the Memory Array, Status Register, or
Intelligent Identifier cannot be accomplished until
the CUI is given the Read Array command.
3.3.4.1
Suspending and Resuming Erase
Since an erase operation requires on the order of
seconds to complete, an Erase Suspend command
is provided to allow erase-sequence interruption in
order to read data from another block of the
memory. Once the erase sequence is started,
writing the Erase Suspend command to the CUI
requests that the WSM pause the erase sequence
at a pre-determined point in the erase algorithm.
The Status Register must then be read to determine
if the erase operation has been suspended.
At this point, a Read Array command can be written
to the CUI in order to read data from blocks other
than that which is being suspended. The only other
valid command at this time is the Erase Resume
command or Read Status Register command.
During erase suspend mode, the chip can go into a
pseudo-standby mode by taking CE# to V
IH
, which
reduces active current draw.
To resume the erase operation, the chip must be
enabled by taking CE# to V
IL
, then issuing the
Erase Resume command. When the Erase Resume
command is given, the WSM will continue with the
erase sequence and complete erasing the block. As
with the end of a standard erase operation, the
Status Register must be read, cleared, and the next
instruction issued in order to continue.
A28F200BR
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18
ADVANCE INFORMATION
SR.7 = 1
?
NO
YES
Start
Write 40H,
Word/Byte Address
Write Word/Byte
Data/Address
Full Status
Check if Desired
Word/Byte Program
Complete
FULL STATUS CHECK PROCEDURE
1
0
Read Status Register
Data (See Above)
1
0
Read
Status Register
V
PP
Range Error
Bus
Operation
Standby
Standby
Check SR.3
1 = V
PP
Low Detect
SR.3 MUST be cleared, if set during a program attempt,
before further attempts are allowed by the Write State Machine.
SR.4 is only cleared by the Clear Status Register command,
in cases where multiple bytes are programmed before full
status is checked.
If error is detected, clear the Status Register before attempting
retry or other error recovery.
Bus
Operation
Command
Comments
Write
Write
Setup
Program
Data = Data to Program
Addr = Location to Program
Read
Data = 40H
Addr = Word/Byte to Program
Check SR.7
1 = WSM Ready
0 = WSM Busy
Repeat for subsequent word/byte program operations.
SR Full Status Check can be done after each word/byte program,
or after a sequence of word/byte programs.
Write FFH after the last program operation to reset device to
read array mode.
Standby
SR.3=
SR.4 =
Word/Byte Program
Error
Word/Byte Program
Successful
Check SR.4
1 = Word/Byte Program Error
Program
Status Register Data
Toggle CE# or OE#
to Update SRD.
Command
Comments
0542_04
Figure 4. Automated Word/Byte Programming Flowchart
E
A28F200BR
19
ADVANCE INFORMATION
SR.7 =
0
1
Start
Write 20H,
Block Address
Write D0H and
Block Address
Full Status
Check if Desired
Block Erase
Complete
FULL STATUS CHECK PROCEDURE
1
0
Read Status Register
Data (See Above)
1
0
Read Status
Register
V
PP
Range Error
Suspend
Erase
Suspend Erase
Loop
YES
NO
1
0
Command Sequence
Error
SR.3 =
SR.5 =
SR.4,5 =
Block Erase
Error
Bus
Operation
Command
Comments
Standby
Check SR.4,5
Both 1 = Command
Sequence Error
Standby
Check SR.3
1 = V Low Detect
SR.3 MUST be cleared, if set during an erase attempt, before further
attempts are allowed by the Write State Machine.
SR.5 is only cleared by the Clear Status Register Command, in
cases where multiple blocks are erase before full status is checked.
If error is detected, clear the Status Register before attempting
retry or other error recovery.
Check SR.5
1 = Block Erase Error
Standby
Bus
Operation
Command
Comments
Write
Write
Erase Setup
Read
Data = 20H
Addr = Within Block to be Erased
Check SR.7
1 = WSM Ready
0 = WSM Busy
Repeat for subsequent block erasures.
Full Status Check can be done after each block erase,
or after a sequence of block erasures.
Write FFH after the last operation to reset device to read
array mode.
Status Register Data
Toggle CE# or OE#
to Update Status Register
Standby
Erase
Confirm
Data = D0H
Addr = Within Block to be Erased
Block Erase
Successful
PP
0542_05
Figure 5. Automated Block Erase Flowchart
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ADVANCE INFORMATION
SR.7 =
0
1
Start
Write B0H
Read
Status Register
Write D0H
Erase Resumed
Bus
Operation
Command
Comments
Write
Erase
Suspend
Read
Data = B0H
Addr = X
Check SR.7
1 = WSM Ready
0 = WSM Busy
Status Register Data
Toggle CE# or OE#
to update SRD.
Addr = X
Standby
CSR.6 =
Write FFH
Read Array Data
Done
Reading
Erase Completed
Write FFH
Read Array Data
YES
NO
0
1
Check SR.6
1 = Erase Suspended
0 = Erase Completed
Standby
Data = FFH
Addr = X
Write
Read array data from block other
than the one being erased.
Read
Data = D0H
Addr = X
Write
Read Array
Erase Resume
0542_06
Figure 6. Erase Suspend/Resume Flowchart
3.4
Boot Block Locking
The boot block family architecture features a
hardware-lockable boot block so that the kernel
code for the system can be kept secure while the
parameter and main blocks are programmed and
erased independently as necessary. Only the boot
block can be locked independently from the other
blocks.
3.4.1
V
PP
= V
IL
FOR COMPLETE
PROTECTION
For complete write protection of all blocks in the
flash device, the V
PP
programming voltage can be
held low. When V
PP
is below V
PPLK
, any program or
erase operation will result in a error in the Status
Register.
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ADVANCE INFORMATION
3.4.2
WP# = V
IL
FOR BOOT BLOCK
LOCKING
When WP# = V
IL
, the boot block is locked and any
program or erase operation will result in an error in
the Status Register. All other blocks remain
unlocked in this condition and can be programmed
or erased normally. Note that this feature is
overridden and the boot block unlocked when RP#
= V
HH
.
3.4.3
RP# = V
HH
OR WP# = V
IH
FOR BOOT
BLOCK UNLOCKING
Two methods can be used to unlock the boot block:
1.
WP# = V
IH
2.
RP# = V
HH
If both or either of these two conditions are met, the
boot block will be unlocked and can be
programmed or erased. The Truth Table, Table 8,
clearly defines the write protection methods.
Table 8. Write Protection Truth Table for
SmartVoltage Boot Block Family
V
PP
RP#
WP#
Write Protection
Provided
V
IL
X
X
All Blocks Locked
V
PPLK
V
IL
X
All Blocks Locked
(Reset)
V
PPLK
V
HH
X
All Blocks Unlocked
V
PPLK
V
IH
V
IL
Boot Block Locked
V
PPLK
V
IH
V
IH
All Blocks Unlocked
3.5
Power Consumption
3.5.1
ACTIVE POWER
With CE# at a logic-low level and RP# at a logic-
high level, the device is placed in the active mode.
Refer to the DC Characteristics table for I
CC
current
values.
3.5.2
AUTOMATIC POWER SAVINGS (APS)
Automatic Power Savings (APS) is a low-power
feature during active mode of operation. The boot
block flash memory family incorporates Power
Reduction Control (PRC) circuitry which allows the
device to put itself into a low current state when it is
not being accessed. After data is read from the
memory array, PRC logic controls the device's
power consumption by entering the APS mode
where typical I
CC
current is less than 1 mA. The
device stays in this static state with outputs valid
until a new location is read.
3.5.3
STANDBY POWER
With CE# at logic-high level (V
IH
), and the CUI in
read mode, the memory is placed in standby mode.
The standby operation disables much of the
device's circuitry and substantially reduces device
power consumption. The outputs (DQ[0:15] or
DQ[0:7]) are placed in a high-impedance state
independent of the status of the OE# signal. When
CE# is at logic-high level during erase or program
functions, the devices will continue to perform the
erase or program function and consume erase or
program active power until erase or program is
completed.
3.5.4
DEEP POWER-DOWN MODE
The SmartVoltage boot block family supports a low
typical I
CC
in deep power-down mode. The device
has a RP# pin which places the device in the deep
power-down mode. When RP# is at a logic-low
(GND
0.2V), all circuits are turned off in order to
save power. (Note: BYTE# pin must be at CMOS
levels to achieve the most deep power-down
current savings.)
During read modes, the RP# pin going low de-
selects the memory and places the output drivers in
a high impedance state. Recovery from the deep
power-down state, requires a minimum access time
of t
PHQV
. (See the AC Characteristics table for
specification numbers.)
During erase or program modes, RP# low will abort
either erase or program operation. The contents of
the memory are no longer valid as the data has
been corrupted by the RP# function. As in the read
mode above, all internal circuitry is turned off to
achieve the power savings.
RP# transitions to V
IL
, or turning power off to the
device will clear the Status Register.
A28F200BR
E
22
ADVANCE INFORMATION
3.6
Power-Up Operation
The device is designed to offer protection against
accidental block erasure or programming during
power transitions. Upon power-up, the device is
indifferent as to which power supply, V
PP
or V
CC
,
powers-up first. Power supply sequencing is not
required.
A system designer must guard against spurious
programming for V
CC
voltages above V
LKO
when
V
PP
is active. Since both WE# and CE# must be
low for a command write, driving either signal to V
IH
will inhibit writes to the device. The CUI architecture
provides an added level of protection since
alteration of memory contents can only occur after
successful completion of the two-step command
sequences. Finally the device is disabled until RP#
is brought to V
IH
, regardless of the state of its
control inputs. By holding the device in reset (RP#
connected to system PowerGood) during power
up/down, invalid bus conditions that may occur can
be masked. This feature provides yet another level
of memory protection.
3.6.1
RP# CONNECTED TO SYSTEM
RESET
The use of RP# during system reset is important
with automated program/erase devices. When the
system comes out of reset it expects to read from
the flash memory. Automated flash memories
provide status information when accessed during
program/erase modes. If a CPU reset occurs with
no flash memory reset, proper CPU initialization
would not occur because the flash memory would
be providing the status information instead of array
data. Intel's Flash memories allow proper CPU
initialization following a system reset through the
use of the RP# input. In this application RP# is
controlled by the same RESET# signal that resets
the system CPU.
3.7
Power Supply Decoupling
Flash memory's power switching characteristics
require careful device decoupling methods. System
designers should consider three supply current
issues:
1.
Standby current levels (I
CCS
)
2.
Active current levels (I
CCR
)
3.
Transient peaks produced by falling and rising
edges of CE#.
Transient current magnitudes depend on the device
outputs' capacitive and inductive loading. Two-line
control and proper decoupling capacitor selection
will suppress these transient voltage peaks. Each
flash device should have a 0.1 F ceramic
capacitor connected between each V
CC
and GND,
and between its V
PP
and GND. These high
frequency, inherently low inductance capacitors
should be placed as close as possible to the
package leads.
3.7.1
V
PP
TRACE ON PRINTED CIRCUIT
BOARDS
Writing to flash memories while they reside in the
target system, requires special consideration of the
V
PP
power supply trace by the printed circuit board
designer. The V
PP
pin supplies the flash memory
cells current for programming and erasing. One
should use similar trace widths and layout
considerations given to the V
CC
power supply trace.
Adequate V
PP
supply traces, and decoupling
capacitors placed adjacent to the component, will
decrease spikes and overshoots.
3.7.2
V
CC
, V
PP
AND RP# TRANSITIONS
The CUI latches commands as issued by system
software and is not altered by V
PP
or CE#
transitions or WSM actions. Its default state upon
power-up, after exit from deep power-down mode,
or after V
CC
transitions above V
LKO
(Lockout
voltage), is read array mode.
After any word/byte program or block erase
operation is complete and even after V
PP
transitions
down to V
PPLK
, the CUI must be reset to read array
mode via the Read Array command when accesses
to the flash memory are desired.
E
A28F200BR
23
ADVANCE INFORMATION
4.0
ABSOLUTE MAXIMUM
RATINGS*
Operating Temperature
During Read ........................... -40C to +125C
During Block Erase
and Word/Byte Program ......... -40C to +125C
Temperature Under Bias ........ -40C to +125C
Storage Temperature.................... -65C to +125C
Voltage on Any Pin
(except V
CC
, V
PP
, A
9
and RP#)
with Respect to GND .............. -2.0V to +7.0V
(1)
Voltage on Pin RP# or Pin A
9
with Respect to GND .......... -2.0V to +13.5V
(1,2)
V
PP
Program Voltage with Respect
to GND during Block Erase and
Word/Byte Program ........... -2.0V to +14.0V
(1,2)
V
CC
Supply Voltage
with Respect to GND .............. -2.0V to +7.0V
(1)
Output Short Circuit Current....................100 mA
(3)
NOTICE: This datasheet contains information on products in
the sampling and initial production phases of development.
The specifications are subject to change without notice.
Verify with your local Intel Sales office that you have the
latest datasheet before finalizing a design
* WARNING: Stressing the device beyond the "Absolute
Maximum Ratings" may cause permanent damage. These
are stress ratings only. Operation beyond the "Operating
Conditions" is not recommended and extended exposure
beyond the "Operating Conditions" may effect device
reliability.
NOTES:
1.
Minimum DC voltage is -0.5V on input/output pins.
During transitions, this level may undershoot to -2.0V
for periods
<20 ns. Maximum DC voltage on input/output pins is
V
CC
+ 0.5V which, during transitions, may overshoot to
V
CC
+ 2.0V for periods <20 ns.
2.
Maximum DC voltage on V
PP
may overshoot to +14.0V
for periods <20ns. Maximum DC voltage on RP# or A
9
may overshoot to 13.5V for periods <20 ns.
3.
Output shorted for no more than one second. No more
than one output shorted at a time.
A28F200BR
E
24
ADVANCE INFORMATION
5.0
OPERATING CONDITIONS
Table 9. Temperature and V
CC
Operating Conditions
Symbol
Parameter
Notes
Min
Max
Units
T
A
Operating Temperature
-40
+125
C
V
CC
V
CC
Supply Voltage (10%)
4.50
5.50
Volts
5.1
Applying V
CC
Voltages
If the V
CC
ramp rate is greater than 0.01 V/s, a
delay of 2 s is required before any device
operation can be initiated. This includes array or
status read, command writes and program or erase
operations. The 2 s are measure beginning from
the time V
CC
reaches V
CCMIN
(4.5V). This delay is
not tied to the operation of the reset input. It is
recommended that the device be held in reset (RP#
= GND) while V
CC
is less than V
CCMIN
.
If the V
CC
ramp rate is less than 0.01 V/s, no delay
is required once V
CC
has reached V
CCMIN
.
V
CC
Ramp Rate
Required Timing
1V/100
s
No delay required.
> 1V/100
s
A delay time of 2
s is required before any device operation is initiated, including read
operations, command writes, program operations, and erase operations. This delay
is
measured beginning from the time V
CC
reaches V
CCMIN
(4.5V for 5V operation).
NOTES:
1.
These requirements must be strictly followed to guarantee all other read and write specifications.
2.
Any time the V
CC
supply drops below V
CCMIN
, the chip may be reset, aborting any operations pending or in progress.
3.
These guidelines must be followed for any V
CC
transition from GND.
E
A28F200BR
25
ADVANCE INFORMATION
5.2
DC Characteristics
Table 10. DC Characteristics: Automotive Temperature Operation
Symbol
Parameter
Notes
Min
Typ
Max
Unit
Test Conditions
I
IL
Input Load Current
1
5.0
A
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
I
LO
Output Leakage Current
1
10
A
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
I
CCS
V
CC
Standby Current
1,3
0.8
2.5
mA
V
CC
= V
CC
Max
CE# = RP# = BYTE#
= V
IH
70
250
A
V
CC
= V
CC
Max
CE# = RP# = WP# =
V
CC
0.2V
I
CCD
V
CC
Deep Power-Down Current
1
0.2
105
A
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
RP# = GND 0.2V
I
CCR
V
CC
Read Current for Word or
Byte
1,5,6
50
65
mA
CMOS
V
CC
= V
CC
Max
CE = V
IL
f = 10 MHz (5V)
5 MHz (3.3V)
I
OUT
= 0 mA
Inputs = GND 0.2V
or V
CC
0.2V
55
70
mA
TTL
V
CC
= V
CC
Max
CE# = V
IL
f = 10 MHz
I
OUT
= 0 mA
Inputs = V
IL
or V
IH
I
CCW
V
CC
Program Current for Word
or Byte
1,4
25
50
mA
Program in Progress
V
PP
= V
PPH
1 (at 5V)
20
45
mA
Program in Progress
V
PP
= V
PPH
2 (at 12V)
A28F200BR
E
26
ADVANCE INFORMATION
Table 10. DC Characteristics: Automotive Temperature Operation (Continued)
Symbol
Parameter
Notes
Min
Typ
Max
Unit
Test Conditions
I
CCE
V
CC
Erase Current
1,4
22
45
mA
Block Erase in
Progress
V
PP
= V
PPH
1 (at 5V)
18
40
mA
Block Erase in
Progress
V
PP
= V
PPH
2 (at 12V)
I
CCES
V
CC
Erase Suspend Current
1,2
5
12.0
mA
CE# = V
IH
Block Erase Suspend
V
PP
= V
PPH
1 (at 5V)
I
PPS
V
PP
Standby Current
1
5
15
A
V
PP
V
CC
I
PPD
V
PP
Deep Power-Down Current
1
0.2
10
A
RP# = GND 0.2V
I
PPR
V
PP
Read Current
1
50
200
A
V
PP
>
V
CC
I
PPW
V
PP
Program Current for Word
or Byte
1
13
30
mA
V
PP
= V
PPH
Program in Progress
V
PP
= V
PPH
1 (at 5V)
8
25
mA
V
PP
= V
PPH
Program in Progress
V
PP
= V
PPH
2 (at 12V)
I
PPE
V
PP
Erase Current
1
15
25
mA
V
PP
= V
PPH
Block Erase in
Progress
V
PP
= V
PPH
1 (at 5V)
10
20
mA
V
PP
= V
PPH
Block Erase in
Progress
V
PP
=V
PPH
2 (at 12V)
I
PPES
V
PP
Erase Suspend Current
1
50
200
A
V
PP
= V
PPH
Block Erase Suspend
in Progress
I
RP#
RP# Boot Block Unlock Current
1,4
500
A
RP# = V
HH
V
PP
= 12V
I
ID
A
9
Intelligent Identifier Current
1,4
500
A
A
9
= V
ID
V
ID
A
9
Intelligent Identifier Voltage
11.4
12.6
V
V
IL
Input Low Voltage
-0.5
0.8
V
E
A28F200BR
27
ADVANCE INFORMATION
Table 10. DC Characteristics: Automotive Temperature Operation (Continued)
Symbol
Parameter
Notes
Min
Typ
Max
Unit
Test Conditions
V
IH
Input High Voltage
2.0
V
CC
0.5V
V
V
OL
Output Low Voltage (TTL)
0.45
V
V
CC
= V
CC
Min
I
OL
= 5.8 mA
V
PP
=12V
V
OH
1
Output High Voltage (TTL)
2.4
V
V
CC
= V
CC
Min
I
OH
= -1.5 mA
V
OH
2
Output High Voltage (CMOS)
V
CC
-
.4V
V
V
CC
= V
CC
Min
I
OH
= -100 A
V
PPLK
V
PP
Lock-Out Voltage
3
0.0
1.5
V
Complete Write
Protection
V
PPH
1
V
PP
(Program/ Erase
Operations)
4.5
5.5
V
V
PP
at 5V
V
PPH
2
V
PP
(Program/ Erase
Operations)
11.4
12.6
V
V
PP
at 12V
V
LKO
V
CC
Program/Erase
Lock Voltage
2.0
V
V
PP
= 12V
V
HH
RP# Unlock Voltage
11.4
12.6
V
Boot Block
Program/Erase
V
PP
= 12V
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
CC
= 5.0V, T = 25C. These currents are valid for all
product versions (packages and speeds).
2. I
CCES
is specified with the device de-selected. If the devices is read while in erase suspend mode, current draw is the sum
of I
CCES
and I
CCR
.
3. Block erases and word/byte program operations are inhibited when V
PP
= V
PPLK
, and not guaranteed in the range between
V
PPH
1 and V
PPLK
.
4. Sampled, not 100% tested.
5. Automatic Power Savings (APS) reduces I
CCR
to less than 1 mA typical, in static operation.
6. CMOS Inputs are either V
CC
0.2V or GND 0.2V. TTL Inputs are either V
IL
or V
IH
.
A28F200BR
E
28
ADVANCE INFORMATION
Table 11. Capacitance (T
A
-25C, f = 1 MHz)
Symbol
Parameter
Note
Typ
Max
Unit
Conditions
C
IN
Input Capacitance
4
6
8
pF
V
IN
= 0V
C
OUT
Output Capacitance
4
10
12
pF
V
OUT
= 0V
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
CC
= 5.0V, T = +25C. These currents are valid for all
product versions (packages and speeds).
2. I
CCES
is specified with the device de-selected. If the devices is read while in erase suspend mode, current draw is the sum
of I
CCES
and I
CCR
.
3. Block erases and word/byte program operations are inhibited when V
PP
= V
PPLK
, and not guaranteed in the range between
V
PPH
1 and V
PPLK
.
4. Sampled, not 100% tested.
5. Automatic Power Savings (APS) reduces I
CCR
to less than 1 mA typical, in static operation.
6. CMOS Inputs are either V
CC
0.2V or GND 0.2V. TTL Inputs are either V
IL
or V
IH
.
TEST POINTS
INPUT
OUTPUT
2.0
0.8
0.8
2.0
2.4
0.45
0542-08
Figure 7. 5V Inputs and Measurement Points
C
L
OUT
V
CC
585
394
DEVICE
UNDER
TEST
0538-09
NOTE:
C
L
= 100 pF, includes Jig Capacitance
Figure 8. 5V Standard Test Configuration
E
A28F200BR
29
ADVANCE INFORMATION
5.3
AC Characteristics
Table 12. AC Characteristics: Read Only Operations
(1)
(Automotive Temperature)
Symbol
Parameter
Note
Min
Max
Unit
t
AVAV
Read Cycle Time
80
ns
t
AVQV
Address to Output Delay
80
ns
t
ELQV
CE# to Output Delay
2
80
ns
t
PHQV
RP# to Output Delay
550
ns
t
GLQV
OE# to Output Delay
2
40
ns
t
ELQX
CE# to Output in Low Z
3
0
ns
t
EHQZ
CE# to Output in High Z
3
20
ns
t
GLQX
OE# to Output in Low Z
3
0
ns
t
GHQZ
OE# to Output in High Z
3
20
ns
t
OH
Output Hold from Address
CE#, or OE# Change
Whichever Occurs First
3
0
0
ns
t
ELFL
t
ELFH
CE# Low to BYTE High or Low
3
5
ns
t
AVFL
Address to BYTE# High or Low
3
5
ns
t
FLQV
t
FHQV
BYTE# to Output Delay
3,4
80
ns
t
FLQZ
BYTE# Low to Output in
High Z
3
30
ns
NOTES:
1.
See AC Input/Output Reference Waveform for timing measurements.
2.
OE# may be delayed up to t
CE
- t
OE
after the falling edge of CE# without impact on t
CE
.
3.
Sampled, but not 100% tested.
4.
t
FLQV
, BYTE# switching low to valid output delay will be equal to t
AVQV
, measured from the time DQ
15
/A
-1
becomes valid.
5.
See 5V Standard Test Configuration. (Figure 9)
A28F200BR
E
30
ADVANCE INFORMATION
Address Stable
Device and
Address Selection
IH
V
IL
V
ADDRESSES (A)
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
CE# (E)
OE# (G)
WE# (W)
DATA (D/Q)
IH
V
IL
V
RP#(P)
OL
V
OH
V
PHQV
t
High Z
Valid Output
Data
Valid
Standby
AVAV
t
EHQZ
t
GHQZ
t
OH
t
GLQV
t
GLQX
t
ELQV
t
ELQX
t
AVQV
t
High Z
0542_10
Figure 9. AC Waveforms for Read Operations
Address Stable
Device
Address Selection
IH
V
IL
V
ADDRESSES (A)
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
CE#
OE#
BYTE#
DATA (D/Q)
(DQ0-DQ7)
OL
V
OH
V
High Z
Data Output
on DQ0-DQ7
Data
Valid
Standby
AVAV
t
EHQZ
t
GHQZ
t
AVQV
t
High Z
GLQV
t
ELQV
t
AVQV
t
OH
t
Data Output
on DQ0-DQ7
DATA (D/Q)
(DQ8-DQ14)
OL
V
OH
V
High Z
Data Output
on DQ8-DQ14
High Z
(DQ15-A1)
OL
V
OH
V
High Z
High Z
Data Output
on DQ15
Address Input
FLQZ
t
ELQX
t
ELFL
t
AVFL
t
GLQX
t
0542_11
Figure 10. BYTE# Timing Diagram for Both Read and Write Operations with V
CC
at 5V
E
A28F200BR
31
ADVANCE INFORMATION
Table 13. AC Characteristics: WE#Controlled Write Operations
(1)
(AutomotiveTemperature)
Symbol
Parameter
Notes
Min
Max
Unit
t
AVAV
Write Cycle Time
80
ns
t
PHWL
RP# High Recovery to WE# Going Low
450
ns
t
ELWL
CE# Setup to WE# Going Low
0
ns
t
PHHWH
Boot Block Lock Setup to WE# Going High
6,8
100
ns
t
VPWH
V
PP
Setup to WE# Going High
5,8
100
ns
t
AVWH
Address Setup to WE# Going High
3
60
ns
t
DVWH
Data Setup to WE# Going High
4
60
ns
t
WLWH
WE# Pulse Width
60
ns
t
WHDX
Data Hold Time from WE# High
4
0
ns
t
WHAX
Address Hold Time from WE# High
3
0
ns
t
WHEH
CE# Hold Time from WE# High
10
ns
t
WHWL
WE# Pulse Width High
20
ns
t
WHQV1
Duration of Word/Byte Program Operation
2,5
7
s
t
WHQV2
Duration of Erase Operation (Boot)
2,5,6
0.4
s
t
WHQV3
Duration of Erase Operation (Parameter)
2,5
0.4
s
t
WHQV4
Duration of Erase Operation (Main)
2,5
0.7
s
t
QWL
V
PP
Hold from Valid SRD
5,8
0
ns
t
QVPH
RP# V
HH
Hold from Valid SRD
6,8
0
ns
t
PHBR
Boot-Block Relock Delay
7,8
100
ns
NOTES:
1.
Read timing characteristics during program and erase operations are the same as during read-only operations. Refer to
AC Characteristics during read mode.
2.
The on-chip WSM completely automates program/erase operations; Program/Erase algorithms are now controlled
internally which includes verify and margining operations.
3.
Refer to command definition table for valid A
IN
.
4.
Refer to command definition table for valid D
IN
.
5.
Program/erase durations are measured to valid SRD data (successful operation, SR.7 = 1)
6.
For boot block program/erase, RP# should be held at V
HH
or WP# should be held at V
IH
until operation completes
successfully.
7.
Time t
PHBR
is required for successful relocking of the boot block.
8.
Sampled, but not 100% tested.
9.
V
PP
at 5V.
10. V
PP
at 12V.
11. See 5V Standard Test Configuration.
A28F200BR
E
32
ADVANCE INFORMATION
ADDRESSES (A)
CE# (E)
OE# (G)
WE# (W)
DATA (D/Q)
RP# (P)
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
HH
V
6.5V
IL
V
IL
V
IN
D
IN
A
IN
A
WHEH
t
WHWL
t
Valid
SRD
IN
D
WHQV1,2,3,4
t
PHHWH
t
IH
V
PHWL
t
High Z
WHDX
t
IH
V
IL
V
V (V)
PP
1
2
3
4
6
5
PPH
V
PPLK
V
PPH
V
1
2
WP#
IL
V
IH
V
AVAV
t
AVWH
t
WHAX
t
DVWH
t
WLWH
t
QVPH
t
QVVL
t
VPWH
t
IN
D
ELWL
t
0542_12
Figure 11. AC Waveforms for Write Operations (WE#-Controlled Writes)
E
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ADVANCE INFORMATION
Table 14. AC Characteristics: CE#Controlled Write Operations
(1,12)
Symbol
Parameter
Notes
Min
Max
Unit
t
AVAV
Write Cycle Time
80
ns
t
PHEL
RP# High Recovery to CE# Going Low
450
ns
t
WLEL
WE# Setup to CE# Going Low
0
ns
t
PHHEH
Boot Block Lock Setup to CE# Going High
6,8
100
ns
t
VPEH
V
PP
Setup to CE# Going High
5,8
100
ns
t
AVEH
Address Setup to CE# Going High
60
ns
t
DVEH
Data Setup to CE# Going High
3
60
ns
t
ELEH
CE# Pulse Width
4
60
ns
t
EHDX
Data Hold Time from CE# High
0
ns
t
EHAX
Address Hold Time from CE# High
4
10
ns
t
EHWH
WE# Hold Time from CE# High
3
10
ns
t
EHEL
CE# Pulse Width High
20
ns
t
EHQV1
Duration of Word/Byte Program Operation
2,5
7
s
t
EHQV2
Duration of Erase Operation (Boot)
2,5,6
0.4
s
t
EHQV3
Duration of Erase Operation (Parameter)
2,5
0.4
s
t
EHQV4
Duration of Erase Operation (Main)
2,5
0.7
s
t
QWL
V
PP
Hold from Valid SRD
5,8
0
ns
t
QVPH
RP# V
HH
Hold from Valid SRD
6,8
0
ns
t
PHBR
Boot-Block Relock Delay
7,8,
100
ns
NOTES:
See WE# Controlled Write Operations for notes 1 through 11.
12. Chip-Enable controlled writes: write operations are driven by the valid combination of CE# and WE# in systems where CE#
defines the write pulse-width (within a longer WE# timing waveform), all set-up, hold and inactive WE# times should be
measured relative to the CE# waveform.
A28F200BR
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34
ADVANCE INFORMATION
ADDRESSES (A)
WE# (E)
OE# (G)
CE# (W)
DATA (D/Q)
RP# (P)
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
HH
V
6.5V
IL
V
IN
D
IN
A
IN
A
AVAV
t
IN
D
Valid
SRD
IN
D
QVPH
t
PHHEH
t
High Z
EHDX
t
IH
V
IL
V
V (V)
PP
1
2
3
4
6
5
EHAX
t
EHQV1,2,3,4
t
EHEL
t
EHWH
t
ELEH
t
DVEH
t
VPEH
t
QVVL
t
PHWL
t
WLEL
t
AVEH
t
PPLK
V
PPH
V
1
2
PPH
V
IL
V
IH
V
IL
V
IH
V
WP#
0542_13
Figure 12. Alternate AC Waveforms for Program and Erase Operations (CE#-Controlled Writes)
Table 15. Extended Temperature Operations - Erase and Program Timings
Parameter
V
PP
= 5V 10%
V
PP
= 12V 5%
Unit
Typ
Max
Typ
Max
Boot/Parameter Block Erase Time
0.8
7.8
0.34
4.0
s
Main Block Erase Time
1.9
15.4
1.1
7.1
s
Main Block Write Time (Byte Mode)
1.4
16.8
1.2
6.8
s
Main Block Write Time (Word Mode)
0.9
8.4
0.6
3.4
s
All numbers are sampled, not 100% tested.
E
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ADVANCE INFORMATION
APPENDIX A
ORDERING INFORMATION
B = Bottom Boot
T = Top Boot
Product line designator
for all Intel Flash products
Density / Organization
X00 = x8/x16 Selectable(X = 2, 4, 8)
Access Speed (ns)
Architecture
B = Boot Block
Operating Temperature
A = Automotive Temp
Package
B = PSOP
Voltage Options (V
PP
)
R = (5 or 12)
AB 2 8 F 2
0
0 BR - T 8 0
0542_14
VALID COMBINATIONS:
AB28F200BR-T80
AB28F200BR-B80
A28F200BR
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36
ADVANCE INFORMATION
APPENDIX B
ADDITIONAL INFORMATION
(1,2)
Order
Number
Document
292130
AB-57 Boot Block Architecture for Safe Firmware Updates
292098
AP-363 Extended Flash BIOS Concepts for Portable Computers
290448
28F002/200BX-T/B 2-Mbit Boot Block Flash Memory Datasheet
290449
28F002/200BL-T/B 2-Mbit Low Power Boot Block Flash Memory Datasheet
290450
28F004/400BL-T/B 4-Mbit Low Power Boot Block Flash Memory Datasheet
290451
28F004/400BX-T/B 4-Mbit Boot Block Flash Memory Datasheet
290531
2-Mbit SmartVoltage Boot Block Flash Memory Family Datasheet
NOTE:
1.
Please call the Intel Literature Center at (800) 548-4725 to request Intel documentation. International customers should
contact their local Intel or distribution sales office.
2.
Visit Intel's World Wide Web home page at http://www.Intel.com for technical documentation and tools.