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Электронный компонент: E28F016SA-150

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E
November 1996
Order Number: 290489-004
n
User-Selectable 3.3V or 5V V
CC
n
User-Configurable x8 or x16 Operation
n
70 ns Maximum Access Time
n
28.6 MB/sec Burst Write Transfer Rate
n
1 Million Typical Erase Cycles per
Block
n
56-Lead, 1.2 mm x 14 mm x 20 mm
TSOP Package
n
56-Lead, 1.8 mm x 16 mm x 23.7 mm
SSOP Package
n
Revolutionary Architecture
Pipelined Command Execution
Program during Erase
Command Superset of Intel
28F008SA
n
1 mA Typical I
CC
in Static Mode
n
1 A Typical Deep Power-Down
n
32 Independently Lockable Blocks
n
State-of-the-Art 0.6 m ETOXTM IV Flash
Technology
Intel's 28F016SA 16-Mbit FlashFileTM memory is a revolutionary architecture which is the ideal choice for
designing embedded direct-execute code and mass storage data/file flash memory systems. With innovative
capabilities, low-power, extended temperature operation and high read/program performance, the 28F016SA
enables the design of truly mobile, high-performance communications and computing products.
The 28F016SA is the highest density, highest performance nonvolatile read/program solution for solid-state
storage applications. Its symmetrically-blocked architecture (100% compatible with the 28F008SA 8-Mbit
FlashFile memory), extended cycling, extended temperature operation, flexible V
CC
, fast program and read
performance and selective block locking provide highly flexible memory components suitable for Resident
Flash Arrays, high-density memory cards and PCMCIA-ATA flash drives. The 28F016SA dual read voltage
enables the design of memory cards which can be interchangeably read/written in 3.3V and 5.0V systems. Its
x8/x16 architecture allows optimization of the memory-to-processor interface. Its high read performance and
flexible block locking enable both storage and execution of operating systems and application software.
Manufactured on Intel's 0.6 m ETOX IV process technology, the 28F016SA is the most cost-effective,
highest density monolithic 3.3V FlashFile memory.
28F016SA 16-MBIT
(1 MBIT X 16, 2 MBIT X 8)
FlashFileTM MEMORY
Includes Commercial and Extended Temperature Specifications
Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or
otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of
Sale for such products, Intel assumes no liability whatsoever, and Intel disclaims any express or implied warranty, relating to
sale and/or use of Intel products including liability or warranties relating to fitness for a particular purpose, merchantability, or
infringement of any patent, copyright or other intellectual property right. Intel products are not intended for use in medical, life
saving, or life sustaining applications.
Intel may make changes to specifications and product descriptions at any time, without notice.
The 28F016SA may contain design defects or errors known as errata. Current characterized errata are available upon request.
*Third-party brands and names are the property of their respective owners.
Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be
obtained from:
Intel Corporation
P.O. Box 7641
Mt. Prospect, IL 60056-7641
or call 1-800-879-4683
COPYRIGHT INTEL CORPORATION, 1996
CG-041493
E
28F016SA
3
CONTENTS
PAGE
PAGE
1.0 INTRODUCTION ............................................. 5
1.1 Product Overview ........................................ 5
2.0 DEVICE PINOUT............................................. 6
2.1 Lead Descriptions ........................................ 8
3.0 MEMORY MAPS ........................................... 12
3.1 Extended Status Register Memory Map..... 13
4.0 BUS OPERATIONS, COMMANDS AND
STATUS REGISTER DEFINITIONS............. 14
4.1 Bus Operations for Word-Wide Mode
(BYTE# = V
IH
)........................................... 14
4.2 Bus Operations for Byte-Wide Mode
(BYTE# = V
IL
) ........................................... 14
4.3 28F008SACompatible Mode Command
Bus Definitions.......................................... 15
4.4 28F016SAPerformance Enhancement
Command Bus Definitions......................... 16
4.5 Compatible Status Register ....................... 18
4.6 Global Status Register ............................... 19
4.7 Block Status Register ................................ 20
5.0 ELECTRICAL SPECIFICATIONS ................. 21
5.1 Absolute Maximum Ratings ....................... 21
5.2 Capacitance............................................... 22
5.3 Timing Nomenclature................................. 23
5.4 DC Characteristics (V
CC
= 3.3V 10%) ..... 26
5.5 DC Characteristics
(V
CC
= 5.0V 10%, 5.0V 5%) ................ 29
5.6 AC CharacteristicsRead Only
Operations.................................................32
5.7 Power-Up and Reset Timings.....................37
5.8 AC Characteristics for WE#Controlled
Command Write Operations ......................38
5.9 AC Characteristics for CE#Controlled
Command Write Operations ......................42
5.10 AC Characteristics for Page Buffer Write
Operations.................................................46
5.11 Erase and Word/Byte Program
Performance, Cycling Performance and
Suspend Latency.......................................49
6.0 DERATING CURVES.....................................50
7.0 MECHANICAL SPECIFICATIONS FOR
TSOP ............................................................52
8.0 MECHANICAL SPECIFICATIONS FOR
SSOP............................................................53
APPENDIX A: Device Nomenclature and
Ordering Information ..................................54
APPENDIX B: Additional Information ...............55
28F016SA
E
4
REVISION HISTORY
Number
Description
-001
Original Version
-002
-- Added 56-Lead SSOP Package
-- Separated AC Reading Timing Specs t
AVEL
, t
AVGL
for Extended Status Register
Reads
-- Modified Device Nomenclature
-- Added Ordering Information
-- Added Page Buffer Typical Program Performance numbers
-- Added Typical Erase Suspend Latencies
-- For I
CCD
(Deep Power-Down current) BYTE# must be at CMOS levels
-- Added SSOP package mechanical specifications
-- Revised document status from "Advanced Information" to "Preliminary"
-003
-- Section 5.11: Renamed specification "Erase Suspend Latency Time to Program" as
"Auto Erase Suspend Latency Time to Program"
-- Section 5.7: Added specifications t
PHEL3
, t
PHEL5
-- TSOP dimension A
1
= 0.05 mm (min)
-- SSOP dimension B = 0.40 mm (max)
-- Minor cosmetic changes
-004
Update:
--Changed Deep Power Down Current
-- Changed Standby Current
-- Changed Sleep Mode Current
Combined Commercial and Extended Temperature information into single datasheet
E
28F016SA
5
1.0
INTRODUCTION
The documentation of the Intel 28F016SA memory
device includes this datasheet, a detailed user's
manual, and a number of application notes, all of
which are referenced at the end of this datasheet.
The datasheet is intended to give an overview of the
chip feature-set and of the operating AC/DC
specifications.
The 16-Mbit Flash Product Family
User's Manual provides complete descriptions of
the user modes, system interface examples and
detailed descriptions of all principles of operation. It
also contains the full list of software algorithm
flowcharts, and a brief section on compatibility with
Intel 28F008SA.
1.1
Product Overview
The 28F016SA is a high-performance 16-Mbit
(16,777,216 bit) block erasable nonvolatile random
access memory organized as either 1 Mword x
16 or 2 Mbyte x 8. The 28F016SA includes thirty-
two 64-KB (65,536) blocks or thirty-two 32-KW
(32,768) blocks. A chip memory map is shown in
Figure 4.
The implementation of a new architecture, with
many enhanced features, will improve the device
operating characteristics and results in greater
product reliability and ease-of-use.
Among the significant enhancements on the
28F016SA:
3.3V Low Power Capability
Improved Program Performance
Dedicated Block Program/Erase Protection
A 3/5# input pin reconfigures the device internally
for optimized 3.3V or 5.0V read/program operation.
The 28F016SA will be available in a 56-lead,
1.2 mm thick, 14 mm x 20 mm TSOP type I
package or a 56-lead, 1.8 mm thick, 16 mm x
23.7 mm SSOP package. The TSOP form factor
and pinout allow for very high board layout
densities. SSOP packaging provides relaxed lead
spacing dimensions.
A Command User Interface (CUI) serves as the
system interface between the microprocessor or
microcontroller and the internal memory operation.
Internal algorithm automation allows word/byte
programs and block erase operations to be
executed using a two-write command sequence to
the CUI in the same way as the 28F008SA 8-Mbit
FlashFile memory.
A superset of commands have been added to the
basic 28F008SA command-set to achieve higher
program performance and provide additional
capabilities. These new commands and features
include:
Page Buffer Writes to Flash
Command Queueing Capability
Automatic Data Programs during Erase
Software Locking of Memory Blocks
Two-Byte Successive Programs in 8-bit
Systems
Erase All Unlocked Blocks
Writing of memory data is performed in either byte
or word increments typically within 6 s, a 33%
improvement over the 28F008SA. A block erase
operation erases one of the 32 blocks in typically
0.6 sec, independent of the other blocks, which is a
65% improvement over the 28F008SA.
Each block can be written and erased a minimum of
100,000 cycles. Systems can achieve typically one-
million block erase cycles by providing wear-leveling
algorithms and graceful block retirement. These
techniques have already been employed in many
flash file systems. Additionally, wear leveling of
block erase cycles can be used to minimize the
program/erase performance differences across
blocks.
The 28F016SA incorporates two Page Buffers of
256 bytes (128 words) each to allow page data
writes. This feature can improve a system write
performance by up to 4.8 times over previous flash
memory devices.
All operations are started by a sequence of
command writes to the device. Three Status
Registers (described in detail later) and a RY/BY#
output pin provide information on the progress of
the requested operation.
While the 28F008SA requires an operation to
complete before the next operation can be
requested, the 28F016SA allows queueing of the
next operation while the memory executes the
current operation. This eliminates system overhead