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Электронный компонент: E28F400BL-B150

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Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or
copyright for sale and use of Intel products except as provided in Intel's Terms and Conditions of Sale for such products Intel retains the right to make
changes to these specifications at any time without notice Microcomputer Products may have minor variations to this specification known as errata
November 1995
COPYRIGHT
INTEL CORPORATION 1995
Order Number 290450-005
4-MBlT (256K x 16 512K x 8)
LOW-POWER BOOT BLOCK
FLASH MEMORY FAMILY
28F400BL-T B 28F004BL-T B
Y
Low Voltage Operation for Very
Low-Power Portable Applications
V
CC
e
3 0V 3 6V Read
V
CC
e
3 15V 3 6V Program Erase
Y
Expanded Temperature Range
b
20 C to
a
70 C
Y
x8 x16 Input Output Architecture
28F400BL-T 28F400BL-B
For High Performance and High
Integration 16-bit and 32-bit CPUs
Y
x8-only Input Output Architecture
28F004BL-T 28F004BL-B
For Space Constrained 8-bit
Applications
Y
Upgradeable to Intel's SmartVoltage
Products
Y
Optimized High Density Blocked
Architecture
One 16-KB Protected Boot Block
Two 8-KB Parameter Blocks
One 96-KB Main Block
Three 128-KB Main Blocks
Top or Bottom Boot Locations
Y
Extended Cycling Capability
10 000 Block Erase Cycles
Y
Automated Word Byte Write and Block
Erase
Command User Interface
Status Registers
Erase Suspend Capability
Y
SRAM-Compatible Write Interface
Y
Automatic Power Savings Feature
0 8 mA typical I
CC
Active Current in
Static Operation
Y
Very High-Performance Read
150 ns Maximum Access Time
65 ns Maximum Output Enable Time
Y
Low Power Consumption
15 mA Typical Active Read Current
Y
Reset Deep Power-Down Input
0 2 mA I
CC
Typical
Acts as Reset for Boot Operations
Y
Write Protection for Boot Block
Y
Hardware Data Protection Feature
Erase Write Lockout During Power
Transitions
Y
Industry Standard Surface Mount
Packaging
28F400BL JEDEC ROM
Compatible
44-Lead PSOP
56-Lead TSOP
28F004BL 40-Lead TSOP
Y
12V Word Byte Write and Block Erase
V
PP
e
12V
g
5% Standard
Y
ETOX
TM
III Flash Technology
3 3V Read
28F400BL-T B 28F004BL-T B
Intel's 4-Mbit Low Power Flash Memory Family is an extension of the Boot Block Architecture which includes
block-selective erasure automated write and erase operations and standard microprocessor interface The
4-Mbit Low Power Flash Memory Family enhances the Boot Block Architecture by adding more density and
blocks x8 x16 input output control very low power very high speed an industry standard ROM compatible
pinout and surface mount packaging The 4-Mbit low power flash family opens a new capability for 3V battery-
operated portable systems and is an easy upgrade to Intel's 2-Mbit Low Power Boot Block Flash Memory
Family
The Intel 28F400BL-T B are 16-bit wide low power flash memory offerings These high density flash memories
provide user selectable bus operation for either 8-bit or 16-bit applications The 28F400BL-T and 28F400BL-B
are 4 194 304-bit non-volatile memories organized as either 524 288 bytes or 262 144 words of information
They are offered in 44-Lead plastic SOP and 56-Lead TSOP packages The x8 x16 pinout conforms to the
industry standard ROM EPROM pinout The Intel 28F004BL-T B are 8-bit wide low power flash memories
with 4 194 304 bits organized as 524 288 bytes of information They are offered in a 40-Lead TSOP package
which is ideal for space-constrained portable systems
These devices use an integrated Command User Interface (CUI) and Write State Machine (WSM) for simplified
word byte write and block erasure The 28F400BL-T 28F004BL-T provide block locations compatible with
Intel's Low Voltage MCS-186 family i386
TM
i486
TM
microprocessors The 28F400BL-B 28F004BL-B provide
compatibility with Intel's 80960KX and 80960SX families as well as other low voltage embedded microproces-
sors
The boot block includes a data protection feature to protect the boot code in critical applications With a
maximum access time of 150 ns these 4-Mbit low power flash devices are very high performance memories at
3 3V which interface to a wide range of low voltage microprocessors and microcontrollers A deep power-
down mode lowers the total V
CC
power consumption to 0 66 mW which is critical in handheld battery powered
systems such as Handy Cellular Phones For very high speed applications using a 5V supply refer to the Intel
28F400BX-T B 28F004BX-T B 4-Mbit Boot Block Flash Memory family datasheet
Manufactured on Intel's 0 8 micron ETOX III process the 4-Mbit flash memory family provides world class
quality reliability and cost-effectiveness at the 4 Mbit density level
2
28F400BL-T B 28F004BL-T B
1 0
PRODUCT FAMILY OVERVIEW
Throughout this datasheet 28F400BL refers to both
the 28F400BL-T and 28F400BL-B devices and
28F004BL refers to both the 28F004BL-T and
28F004BL-B devices The 4-Mbit flash family refers
to both the 28F400BL and 28F004BL products This
datasheet comprises the specifications for four sep-
arate products in the 4-Mbit flash family Section 1
provides an overview of the 4-Mbit flash family in-
cluding applications pinouts and pin descriptions
Sections 2 and 3 describe in detail the specific mem-
ory organizations for the 28F400BL and 28F004BL
products respectively Section 4 combines a de-
scription of the family's principles of operations Fi-
nally section 5 describes the family's operating
specifications
Product Family
x8 x16 Products
x8-Only Products
28F400BL-T
28F004BL-T
28F400BL-B
28F004BL-B
1 1 Designing for Upgrade to
SmartVoltage Products
Today's high volume boot block products are up-
gradeable to Intel's SmartVoltage boot block prod-
ucts that provide program and erase operation at 5V
or 12V V
PP
and read operation at 3V or 5V V
CC
Intel's SmartVoltage boot block products provide the
following enhancements to the boot block products
described in this datasheet
1 DU pin is replaced by WP
to provide a means to
lock and unlock the boot block with logic signals
2 5V Program Erase operation uses proven pro-
gram and erase techniques with 5V
g
10% ap-
plied to V
PP
3 Enhanced circuits optimize performance at 3 3V
V
CC
Refer to the 2 4 or 8Mbit SmartVoltage Boot Block
Flash Memory datasheets for complete specifica-
tions
When you design with 12V V
PP
boot block products
you should provide the capability in your board de-
sign to upgrade to SmartVoltage products
Follow these guidelines to ensure compatibility
1 Connect DU (WP
on SmartVoltage products) to
a control signal or to V
CC
or GND
2 If adding a switch on V
PP
for write protection
switch to GND for complete write protection
3 Allow for connecting 5V to V
PP
and disconnect
12V from the V
PP
line if desired
1 2 Main Features
The 28F400BL 28F004BL boot block flash memory
family is a very high performance 4-Mbit (4 194 304
bit) memory family organized as either 256 KWords
(262 144 words) of 16 bits each or 512 Kbytes
(524 288 bytes) of 8 bits each
Seven Separately Erasable Blocks
including a
Hardware-Lockable boot block
(16 384 Bytes)
two parameter blocks
(8 192 Bytes each) and four
main blocks
(1 block of 98 304 Bytes and 3 blocks
of 131 072 Bytes) are included on the 4-Mbit family
An erase operation erases one of the main blocks in
typically 3 4 seconds and the boot or parameter
blocks in typically 2 0 seconds independent of the
remaining blocks Each block can be independently
erased and programmed 10 000 times
The Boot Block
is located at either the top (-T) or
the bottom (-B) of the address map in order to ac-
commodate different microprocessor protocols for
boot code location The hardware Iockable boot
block
provides the most secure code storage The
boot block is intended to store the kernel code re-
quired for booting-up a system When the RP
pin is
between 11 4V and 12 6V the boot block is unlocked
and program and erase operations can be per-
formed When the RP
pin is at or below 4 1V the
boot block is locked and program and erase opera-
tions to the boot block are ignored
The 28F400BL products are available in the
ROM EPROM compatible pinout and housed in the
44-Lead PSOP (Plastic Small Outline) package and
the 56-Lead TSOP (Thin Small Outline 1 2mm thick)
package as shown in Figures 3 and 4
The
28F004BL products are available in the 40-Lead
TSOP (1 2mm thick) package as shown in Figure 5
The Command User Interface (CUI) serves as the
interface between the microprocessor or microcon-
troller and the internal operation of the 28F400BL
and 28F004BL flash memory products
Program and Erase Automation
allow program
and erase operations to be executed using a two-
write command sequence to the CUI The internal
Write State Machine (WSM) automatically executes
the algorithms and timings necessary for program
and erase operations including verifications there-
by unburdening the microprocessor or microcontrol-
ler Writing of memory data is performed in word or
byte increments for the 28F400BL family and in byte
increments for the 28F004BL family typically within
11 ms
3
28F400BL-T B 28F004BL-T B
The Status Register (SR) indicates the status of the
WSM and whether the WSM successfully completed
the desired program or erase operation
Maximum Access Time of 150 ns (t
ACC
)
is achieved
over the commercial temperature range (0 C to
a
70 C) V
CC
supply voltage range (3 0V to 3 6V
4 5V to 5 5V) and 50 pF output load
I
pp
Program current is 40 mA for x16 operation
and 30 mA for x8 operation I
PP
Erase current is
30 mA maximum V
PP
erase and programming
voltage is 11 4V to 12 6V (V
PP
e
12V
g
5%) un-
der all operating conditions
Typical I
CC
Active Current of 15 mA
is achieved
for the x16 products and the x8 products
The 4-Mbit flash family is also designed with an Au-
tomatic Power Savings (APS) feature to minimize
system battery current drain and allow for very low
power designs Once the device is accessed to read
the array data APS mode will immediately put the
memory in static mode of operation where I
CC
active
current is typically 0 8 mA until the next read is initia-
ted
When the CE
and RP
pins are at V
CC
and the
BYTE
pin (28F400BX-L-only) is at either V
CC
or
GND the CMOS Standby mode is enabled where
I
CC
is typically 45 mA
A Deep Power-Down Mode is enabled when the
PWD pin is at ground minimizing power consumption
and providing write protection during power-up con-
ditions I
CC
current
during deep power-down mode
is 0 20 mA typical An initial maximum access time
or Reset Time of 600 ns is required from RP
switching until outputs are valid Equivalently the
device has a maximum wake-up time of 1 ms until
writes to the Command User Interface are recog-
nized When RP
is at ground the WSM is reset the
Status Register is cleared and the entire device is
protected from being written to This feature pre-
vents data corruption and protects the code stored
in the device during system reset The system Reset
pin can be tied to RP
to reset the memory to nor-
mal read mode upon activation of the Reset pin
When the CPU enters reset mode it expects to read
the contents of a memory location Furthermore
with on-chip program erase automation in the
4-Mbit family and the RP
functionality for data pro-
tection when the CPU is reset and even if a program
or erase command is issued the device will not rec-
ognize any operation until RP
returns to its normal
state
For the 2SF400BL Byte-wide or Word-wide In-
put Output Control
is possible by controlling the
BYTE
pin When the BYTE
pin is at a logic low
the device is in the byte-wide mode (x8) and data is
read and written through DQ 0 7
During the byte-
wide mode DQ 8 14 are tri-stated and DQ15 Ab1
becomes the lowest order address pin When the
BYTE
pin is at a logic high the device is in the
word-wide mode (x16) and data is read and written
through DQ 0 15
1 3 Applications
The 4-Mbit low power boot block flash memory fami-
ly combines high density very low power high per-
formance cost-effective flash memories with block-
ing and hardware protection capabilities Its flexibility
and versatility will reduce costs throughout the prod-
uct life cycle Flash memory is ideal for Just-In-Time
production flow
reducing system inventory and
costs and eliminating component handling during
the production phase During the product life cycle
when code updates or feature enhancements be-
come necessary flash memory will reduce the up-
date costs by allowing either a user-performed code
change via floppy disk or a remote code change via
a serial link The 4-Mbit flash family provides full
function blocked flash memories suitable for a wide
range of applications These applications include
Extended PC BIOS and ROM-able
applications
storage Handy Digital Cellular Phone program
and data storage and various other low power em-
bedded applications where both program and data
storage are required
Portable systems such as Notebook Palmtop com-
puters are ideal applications for the 4-Mbit low pow-
er flash products Portable and handheld personal
computer applications are becoming more complex
with the addition of power management software to
take advantage of the latest microprocessor tech-
nology the availability of ROM-based application
software pen tablet code for electronic hand writing
and diagnostic code Figure 1 shows an example of
a 28F400BL-T application
This increase in software sophistication augments
the probability that a code update will be required
after the Notebook is shipped The 4-Mbit flash
products provide an inexpensive update solution for
the notebook and handheld personal computers
while extending their product lifetime Furthermore
the 4-Mbit flash products' deep power-down mode
provides added flexibility for these battery-operated
portable designs which require operation at very low
power levels
4
28F400BL-T B 28F004BL-T B
The 4-Mbit low power flash products also provide
excellent design solutions for Handy Digital Cellular
Phone applications requiring low voltage supply
high performance high density storage capability
coupled with modular software designs and a small
form factor package (x8-only bus) The 4-Mbit's
blocking scheme allows for an easy segmentation of
the embedded code with 16-Kbytes of Hardware-
Protected Boot code 4 Main Blocks of program
code and 2 Parameter Blocks of 8-Kbytes each for
frequently updatable data storage and diagnostic
messages
(e g
phone
numbers
authorization
codes) Figure 2 is an example of such an applica-
tion with the 28F004BL-T
These are a few actual examples of the wide range
of applications for the 4-Mbit low power Boot Block
flash memory family which enable system designers
achieve the best possible product design Only your
imagination limits the applicability of such a versatile
low power product family
290450 7
Figure 1 28F400BL Interface to Intel386
TM
EX Embedded Processor
290450 23
Figure 2 28F004BL Interface to INTEL 80L188EB Low Voltage 8-bit Embedded Processor
5