1
Item
Symbol
Ratings
Unit Remarks
Drain-source voltage
V
DS
900
V
DSX
900
Continuous Drain Current
I
D
13
Pulsed Drain Current
I
D(puls]
52
Gate-Source Voltage
V
GS
30
Non-Repetitive
Maximum Avalanche current
I
AS
13
Repetitive
Maximum Avalanche current
I
AR
6.5
Non-Repetitive
E
AS
1006
Maximum Avalanche Energy
Repetitive
E
AR
35.5
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
dV
DS
/dt
40
Peak Diode Recovery dV/dt
dV/dt
5
Max. Power Dissipation
P
D
355
2.50
Operating and Storage
T
ch
+150
Temperature range
T
stg
Electrical characteristics (T
c
=25C unless otherwise specified)
Thermal characteristics
2SK3875-01
FUJI POWER MOSFET
Features
High speed switching, Low on-resistance
Low driving power, Avalanche-proof
No secondary breakdown
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25C unless otherwise specified)
Item
Symbol
Test Conditions
Zero Gate Voltage Drain Current I
DSS
V
DS
=900V V
GS
=0V
V
DS
=720V V
GS
=0V
V
GS
=30V
I
D
=6.5A V
GS
=10V
I
D
=6.5A V
DS
=25V
V
CC
=600V I
D
=6.5A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
V
V
A
nA
S
pF
nC
V
s
C
ns
Min. Typ. Max. Units
Thermal resistance
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
0.352
50.0
C/W
C/W
Symbol
BV
DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
t
rr
Q
rr
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time t
on
Turn-Off Time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250A V
GS
=0V
I
D
= 250A V
DS
=V
GS
T
ch
=25C
T
ch
=125C
V
DS
=0V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=450V
I
D
=13A
V
GS
=10V
I
F
=13A V
GS
=0V T
ch
=25C
I
F
=13A V
GS
=0V
-di/dt=100A/s T
ch
=25C
V
V
A
A
V
A
A
mJ
mJ
kV/s
kV/s
W
C
C
900
3.0
5.0
25
250
100
0.79
1.00
6.0
12
1750
2625
220
330
13
19.5
20
30
12
18
60
90
15
22.5
46
69
14
21
17
26
1.10
1.50
4.5
25
-55 to +150
Outline Drawings
(mm)
www.fujielectric.co.jp/fdt/scd
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
200407
V
GS
=-30V
Note *1
Note *2
Note *3
V
DS
900V
Note *4
Tc=25C
Ta=25C
=
<
Note *1:Tch 150C
Note *2:StartingTch=25C,I
AS
=5.2A,L=67.5mH,
V
CC
=100V,R
G
=50
E
AS
limited by maximum channel temperature
and Avalanche current.
See to the `Avalanche Energy' graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the `Transient Thermal impedance'
graph.
Note *4:I
F
-I
D
, -di/dt=50A/s,V
CC
BV
DSS
, Tch 150C
=
<
Gate(G)
Source(S)
Drain(D)
=
<
=
<
=
<
2
Characteristics
2SK3875-01
FUJI POWER MOSFET
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
400
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [
C]
0
4
8
12
16
20
0
4
8
12
16
20
20V
6.5V
VGS=5.5V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80
s pulse test,Tch=25
C
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80
s pulse test,VDS=25V,Tch=25
C
0.1
1
10
100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80
s pulse test,VDS=25V,Tch=25
C
0
5
10
15
20
0.6
0.8
1.0
1.2
1.4
6.0V
RDS
(o
n) [
]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
s pulse test,Tch=25
C
10V
20V
8.0V
6.5V
VGS=5.5V
-50
-25
0
25
50
75
100
125
150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
RD
S
(
o
n
)
[
]
Tch [
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=6.5A,VGS=10V
3
2SK3875-01
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
A
VGS
(
th)
[V]
Tch [
C]
0
10
20
30
40
50
60
70
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=13A,Tch=25
C
VGS
[V]
720V
450V
Vcc= 180V
10
-1
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
10
4
C [
p
F]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0.1
1
10
100
IF
[A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
s pulse test,Tch=25
C
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t [n
s]
ID [A]
0
25
50
75
100
125
150
0
200
400
600
800
1000
1200
I
AS
=5.2A
I
AS
=7.8A
I
AS
=13A
E
AV [
m
J
]
starting Tch [
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=100V
4
http://www.fujielectric.co.jp/fdt/scd/
2SK3875-01
FUJI POWER MOSFET
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-2
10
-1
10
0
10
1
10
2
Single Pulse
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25
C,Vcc=100V
A
v
al
an
c
h
e
Cur
r
en
t
I
AV
[A
]
t
AV
[sec]
0
25
50
75
100
125
150
175
200
0
2
4
6
8
10
12
14
16
Repetitive
Non-Repetitive
(Single Pulse)
I
AV
[A
]
starting Tch [
C]
Maximum Avalanche Current vs. starting Tch
I(AV)=f(starting Tch):Vcc=100V
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
10
1
(Maximum Transient Thermal Impedance)
(Zth(ch-c)=f(t):D=0)
(Z
t
h
(ch
-
c) [
C
/
W
]
)
t [sec]
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