B-20
01/99
2N5397, 2N5398
N-Channel Silicon Junction Field-Effect Transistor
Low-Noise
High Power Gain
High Transconductance
Mixers
Oscillators
VHF Amplifiers
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
25 V
Drain Source Voltage
25 V
Continuous Forward Gate Current
10 mA
Continuous Device Power Dissipation
300 mW
Power Derating
1.7 mW/C
TO72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
Surface Mount
SMP5397, SMP5398
At 25C free air temperature:
2N5397
2N5398
Process NJ26L
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
25
25
V
I
G
= 1 A, V
DS
= V
Gate Source Forward Voltage
V
GS(F)
1
1
V
I
G
= 1 mA, V
DS
= V
Gate Reverse Current
I
GSS
0.1
0.1
nA
V
GS
= 15V, V
DS
= V
0.1
0.1
A
V
GS
= 15V, V
DS
= V
T
A
= 150C
Gate Source Cutoff Voltage
V
GS(OFF)
1
6
1
6
V
V
DS
= 10V, I
D
= 1 nA
Drain Saturation Current (Pulsed)
I
DSS
10
30
5
40
mA
V
DS
= 10V, V
GS
= V
Dynamic Electrical Characteristics
Common Source
g
fs
5.5
9
5
10
mS
V
DG
= 10V, I
D
= 10 mA
f = 450 MHz
Forward Transconductance
Common Source
| Y
fs
|
6
10
5.5
10
mS
V
DS
= 10V, I
D
= 10 mA
f = 1 kHz
Forward Transfer Admittance
Common Source Output Conductance
| g
os
|
0.4
0.5
mS
V
DG
= 10V, I
D
= 10 mA
f = 450 MHz
Common Source Input Admittance
| Y
os
|
0.2
0.4
mS
V
DS
= 10V, I
D
= 10 mA
f = 1 kHz
Common Source Input Conductance
g
is
2
3
mS
V
DG
= 10V, I
D
= 10 mA
f = 450 MHz
Common Source Input Capacitance
C
iss
5
5.5
pF
V
DG
= 15V, V
GS
= V
f = 1 kHz
Common Source
C
rss
1.2
1.3
pF
V
DG
= 15V, V
GS
= V
f = 1 kHz
Reverse Transfer Capacitance
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-20
PDF 
ZIP