01/99
B-23
2N5911, 2N5912
Dual N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
Continuous Forward Gate Current
50 mA
Total Device Power Dissipation
500 mW
Power Derating
4 mWC
Storage Temperature Range
65C to + 200C
SOIC-8 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1, 4 N/C,
5 Source 2, 6 Drain 2, 7 Gate 2, 8 Omitted
TO78 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1,
4 Case, 5 Source 2, 6 Drain 2,
7 Gate 2, 8 Omitted
Surface Mount
SMP5911, SMP5912
At 25C free air temperature:
2N5911
2N5912
Process NJ30L or NJ36D
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
25
25
V
I
G
= 1 A, V
DS
= V
Gate Reverse Current
I
GSS
100
100
pA
V
GS
= 15V, V
DS
= V
250
250
nA
V
GS
= 15V, V
DS
= V
T
A
= 150C
Gate Operating Current
I
G
100
100
pA
V
DG
= 10V, I
D
= 5 mA
100
100
nA
V
DG
= 10V, I
D
= 5 mA
T
A
= 125C
Gate Source Cutoff Voltage
V
GS(OFF)
1
5
1
5
V
V
DS
= 10V, I
D
= 1 nA
Gate Source Voltage
V
GS
0.3
4
0.3
4
V
V
DS
= 10V, I
D
= 5 mA
Drain Saturation Current (Pulsed)
I
DSS
7
40
7
40
mA
V
DS
= 10V, V
GS
= V
Dynamic Electrical Characteristics
Common Source
g
fs
5000 10000 5000 10000
S
V
DG
= 10V, I
D
= 5 mA
f = 1 kHz
Forward Transconductance
5000 10000 5000 10000
S
V
DG
= 10V, I
D
= 5 mA
f = 100 MHz
Common Source
g
os
100
100
S
V
DG
= 10V, I
D
= 5 mA
f = 1 kHz
Output Conductance
150
150
S
V
DG
= 10V, I
D
= 5 mA
f = 100 MHz
Common Source Input Capacitance
C
iss
5
5
pF
V
DG
= 10V, I
D
= 5 mA
f = 1 MHz
Common Source
C
rss
1.2
1.2
pF
V
DG
= 10V, I
D
= 5 mA
f = 1 MHz
Reverse Transfer Capacitance
Equivalent Short Circuit Input Noise Voltage
e
N
20
20
nV/
Hz
V
DG
= 10V, I
D
= 5 mA
f = 10 kHz
Noise Figure
NF
1
1
dB
V
DG
= 10V, I
D
= 5 mA
f = 10 kHz
R
G
= 100 K
Differential Gate Current
I
G1
I
G2
20
20
nA
V
DG
= 10V, I
D
= 5 mA
T
A
= 125C
Saturation Drain Current Ratio
I
DSS1
/ I
DSS2
0.95
1
0.95
1
V
DG
= 20V, V
GS
= V
Differential Gate Source Voltage
| V
GS1
V
GS2
|
10
15
mV
V
DG
= 10V, I
D
= 5 mA
T
A
= 25C,
Gate Source Voltage
V
GS1
V
GS2
20
40
mV
V
DG
= 10V, I
D
= 5 mA
T
B
= 125C
Differential Drift
T
T
A
= 55C,
20
40
mV
V
DG
= 10V, I
D
= 5 mA
T
B
= 25C
Transconductance Ratio
g
fs1
/ g
fs2
0.9
1
0.85
1
V
DG
= 10V, I
D
= 5 mA
f = 1 kHz
Wideband Differential
Amplifiers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/14/99 11:31 AM Page B-23
PDF 
ZIP