01/99
B-25
2N6451, 2N6452
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
2N6451
2N6452
Reverse Gate Source Voltage
20 V
25 V
Reverse Gate Drain Voltage
20 V
25 V
Continuous Forward Gate Current
10 mA
10 mA
Continuous Device Power Dissipation
360 mW
360 mW
Power Derating
2.88 mW/C 2.88 mW/C
TO72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
At 25C free air temperature:
2N6451
2N6452
Process NJ132L
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
20
25
V
I
G
= 1 A, V
DS
= V
0.1
nA
V
GS
= 10V, V
DS
= V
Gate Reverse Current
I
GSS
0.5
nA
V
GS
= 15V, V
DS
= V
0.2
A
V
GS
= 10V, V
DS
= V
T
A
= 125C
1
A
V
GS
= 15V, V
DS
= V
T
A
= 125C
Gate Source Cutoff Voltage
V
GS(OFF)
0.5 3.5 0.5 3.5
V
V
DS
= 10V, I
D
= 0.5 nA
Drain Saturation Current (Pulsed)
I
DSS
5
20
5
20
mA
V
DS
= 10V, V
GS
= V
Dynamic Electrical Characteristics
Common Source
| Y
fs
|
15
30
15
30
mS
V
DS
= 10V, I
D
= 5 mA
f = 1 kHz
Forward Transmittance
mS
V
DS
= 10V, I
D
= 15 mA
f = 1 kHz
Common Source
| Y
os
|
50
50
S
V
DS
= 10V, I
D
= 5 mA
f = 1 kHz
Output Conductance
S
V
DS
= 10V, I
D
= 15 mA
f = 1 kHz
Common Source
C
iss
25
25
pF
V
DS
= 10V, I
D
= 5 mA
f = 1 kHz
Input Capacitance
pF
V
DS
= 10V, I
D
= 15 mA
f = 1 kHz
Common Source Reverse
C
rss
5
5
pF
V
DS
= 10V, I
D
= 5 mA
f = 1 kHz
Transfer Capacitance
pF
V
DS
= 10V, I
D
= 15 mA
f = 1 kHz
Equivalent Short Circuit
e
N
5
10
nV/
Hz
V
DS
= 10V, I
D
= 5 mA
f = 10 kHz
Input Noise Voltage
3
8
nV/
Hz
V
DS
= 10V, I
D
= 5 mA
f = 1 kHz
Noise Figure
NF
1.5
2.5
dB
V
DS
= 10V, I
D
= 5 mA
f = 10 Hz
R
G
= 10 k
Audio Amplifiers
Low-Noise, High Gain
Amplifiers
Low-Noise Preamplifiers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-25
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