01/99
B-31
IF1330
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
20 V
Continuous Forward Gate Current
10 mA
Continuous Device Power Dissipation
225 mW
Power Derating
1.8 mW/C
Storage Temperature Range
65C to 200C
TO236AB Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
At 25C free air temperature:
IF1330
Process NJ132H
Static Electrical Characteristics
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
20
V
I
G
= 1 A, V
DS
= V
Gate Reverse Current
I
GSS
0.1
nA
V
DS
= V, V
GS
= 10V
Gate Source Cutoff Voltage
V
GS(OFF)
0.35
1.5
V
V
DS
= 10V, I
D
= 0.5 nA
Drain Saturation Current (Pulsed)
I
DSS
5
20
mA
V
DS
= 10V, V
GS
= V
Dynamic Electrical Characteristics
Common Source
g
fs
10
mS
V
DS
= 10V, I
D
= 5 mA
f = 1 kHz
Forward Transconductance
Common Source Input Capacitance
C
iss
20
pF
V
DS
= 10V, I
D
= 5 mA
f = 1 MHz
Common Source
C
rss
5
pF
V
DS
= 10V, I
D
= 5 mA
f = 1 MHz
Reverse Transfer Capacitance
Typ
Equivalent Short Circuit
e
N
2.5
nV/
Hz
V
DS
= 10V, I
D
= 5 mA
f = 1 kHz
Input Noise Voltage
Low-Noise, High Gain Amplifier
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/14/99 1:50 PM Page B-31
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