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Электронный компонент: IFN146

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01/99
D-5
IFN146
Dual N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
40 V
Continuous Forward Gate Current
10 mA
Continuous Device Power Dissipation
375 mW
Power Derating
3 mW/C
Storage Temperature Range
65C to 200C
TO71 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Gate, 3 Drain,
5 Source, 6 Gate, 7 Drain
At 25C free air temperature:
IFN146
Process NJ450
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
40
V
I
G
= 1 A, V
DS
= V
Gate Reverse Current
I
GSS
1
nA
V
GS
= 30V, V
DS
= V
1
A
V
GS
= 30V, V
DS
= V
T
A
= 150C
Gate Source Cutoff Voltage
V
GS(OFF)
0.3
1.2
V
V
DS
= 10V, I
D
= 1 A
Drain Saturation Current (Pulsed)
I
DSS
30
mA
V
DS
= 10V, V
GS
= V
Dynamic Electrical Characteristics
Common Source
g
fs
30
40
mS
V
DS
= 10V, V
GS
= V
f = 1 kHz
Forward Transconductance
I
DSS
= 5 mA
Common Source Input Capacitance
C
iss
75
pF
V
DS
= 10V, V
GS
= V
f = 1 kHz
Common Source Reverse
C
rss
15
pF
V
DS
= 10V, I
D
= A
f = 1 kHz
Transfer Capacitance
Noise Figure
NF
1
dB
V
DS
= 10V, I
D
= 5 mA
f = 1 kHz
R
G
= 100
Differential Gate Source Voltage
|V
GS1
V
GS2
|
20
mV
V
DS
= 10V, I
D
= 5 mA
Low-Noise Audio Amplifier
Equivalent to Japanese 2SK146
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page D-5