D-6
01/99
IFN147
N-Channel Silicon Junction Field-Effect Transistor
Low-Noise Audio Amplifier
Equivalent to Japanese 2SK147
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
40 V
Continuous Forward Gate Current
10 mA
Continuous Device Power Dissipation
300 mW
Power Derating
2.4 mW/C
TO18 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Gate & Case, 3 Drain
At 25C free air temperature:
IFN147
Process NJ450
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
40
V
I
G
= 1 A, V
DS
= V
Gate Reverse Current
I
GSS
1
nA
V
GS
= 30V, V
DS
= V
1
A
V
GS
= 30V, V
DS
= V
T
A
= 150C
Gate Source Cutoff Voltage
V
GS(OFF)
0.3
1.2
V
V
DS
= 10V, I
D
= 1 A
Drain Saturation Current (Pulsed)
I
DSS
5
30
mA
V
DS
= 10V, V
GS
= V
Dynamic Electrical Characteristics
Common Source
g
fs
30
40
mS
V
DS
= 10V, V
GS
= V
f = 1 kHz
Forward Transconductance
I
DSS
= 5 mA
Common Source Input Capacitance
C
iss
75
pF
V
DS
= 10V, V
GS
= V
f = 1 kHz
Common Source Reverse
C
rss
15
pF
V
DS
= 10V, I
D
=
f = 1 Hz
Transfer Capacitance
Noise Figure
NF
1
dB
V
DS
= 10V, I
D
= 5 mA
f = 1 kHz
10
dB
R
G
= 100
f = 100 Hz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page D-6
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