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Электронный компонент: IFN17

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D-2
01/99
Japanese Equivalent JFET Types
Silicon Junction Field-Effect Transistors
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Japanese
2SK17
2SK40
2SK59
2SK105
2SK113
InterFET
IFN17
IFN40
IFN59
IFN105
IFN113
Process
NJ16
NJ16
NJ16
NJ16
NJ132
Unit
N
N
N
N
N
Parameters
Conditions
Limit
Channel
Channel
Channel
Channel
Channel
BV
GSS
I
G
= 1.0 A
V
20
50
30
50
50
Min
I
GSS
V
GS
= ( ), V
DS
=
nA
0.10
1.0
1.0
1.0
1.0
Max
(10 V)
( 30 V)
(10 V)
( 30 V)
( 20 V)
V
GS(off)
V
DS
= ( ), I
D
= 1.0 nA
V
0.5/ 6.0
0.4/ 5.0
0.4/ 5.0
0.25/ 4.5
0.3/10
Min/Max
(10 V)
(15 V)
(10 V)
(5.0 V)
(20 V)
I
DSS
V
DS
= ( ), V
GS
=
mA
0.3/6.5
0.6/6.5
0.3/1.4
0.5/12
5.0/150
Min/Max
(10 V)
(15 V)
(10 V)
(5.0 V)
(20 V)
g
fs
V
DS
= ( ), V
GS
=
mS
2.0
2.0
1.5
2.1
20
Typ
(10 V)
(15 V)
(10 V)
(5.0 V)
(20 V)
C
iss
V
GS
= ( ), V
DS
= ( )
pF
4.0
4.0
4.0
10
Typ
() ()
() (15 V)
() (10 V)
() (20 V)
C
rss
V
GS
= ( ), V
DS
= ( )
pF
1.2
1.2
1.0
3.0
Typ
( 10 V) ()
() (15 V)
() (10 V)
() (15 V)
Package Configuration
TO-226AA
TO-226AA
TO-226AA
TO-226AA
TO-18
Pin Configuration
SGD
SGD
SGD
DGS
SDG
Databook.fxp 1/14/99 2:03 PM Page D-2