01/99
B-47
IFN5911, IFN5912
N-Channel Dual Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation
500 mW
Power Derating
4 mW/C
Storage Temperature Range
65C to 200C
TO78 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case,
5 Source, 6 Drain, 7 Gate, 8 Omitted
At 25C free air temperature:
IFN5911
IFN5912
Process NJ30L or NJ36D
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
25
25
V
I
G
= 1 A, V
DS
= V
Gate Reverse Current
I
GSS
100
100
pA
V
GS
= 15V, V
DS
= V
250
250
nA
V
GS
= 15V, V
DS
= V
T
A
= 150C
Gate Operating Current
I
G
100
100
pA
V
DG
= 10V, I
D
= 5 mA
100
100
nA
V
DG
= 10V, I
D
= 5 mA
T
A
= 125C
Gate Source Cutoff Voltage
V
GS(OFF)
1
5
1
5
V
V
DS
= 10V, I
D
= 1 nA
Gate Source Voltage
V
GS
0.3
4
0.3
4
V
V
DS
= 10V, I
D
= 5 mA
Drain Saturation Current (Pulsed)
I
DSS
7
40
7
40
mA
V
DS
= 10V, V
GS
= V
Dynamic Electrical Characteristics
Common Source
g
fs
3000 10000 3000 10000
S
V
DG
= 10V, I
D
= 5 mA
f = 1 kHz
Forward Transconductance
3000 10000 3000 10000
S
V
DG
= 10V, I
D
= 5 mA
f = 100 MHz
Common Source
g
os
100
100
S
V
DG
= 10V, I
D
= 5 mA
f = 1 kHz
Output Conductance
150
150
S
V
DG
= 10V, I
D
= 5 mA
f = 100 MHz
Common Source Input Capacitance
C
iss
5
5
pF
V
DG
= 10V, I
D
= 5 mA
f = 1 MHz
Common Source
C
rss
1.2
1.2
pF
V
DG
= 10V, I
D
= 5 mA
f = 1 MHz
Reverse Transfer Capacitance
Equivalent Short Circuit
e
N
20
20
nV/
Hz
V
DG
= 10V, I
D
= 5 mA
f = 10 kHz
Input Noise Voltage
Noise Figure
NF
1
1
dB
V
DG
= 10V, I
D
= 5 mA
f = 10 Hz
R
G
= 100 K
Differential Gate Current
|I
G1
| |I
G2
|
20
20
nA
V
DG
= 10V, I
D
= 5 mA
T
A
= 125C
Saturation Drain Current Ratio
I
DSS1
/ I
DSS2
0.95
1
0.95
1
V
DS
= 10V, V
GS
= V
Differential Gate Source Voltage
V
GS1
V
GS2
10
15
mV
V
DG
= 10V, I
D
= 5 mA
V
GS1
V
GS2
20
40
V/C
V
DG
= 10V, I
D
= 5 mA
T
A
= 25C
Gate Source Voltage
T
T
B
= 125C
Differential Drift
V
GS1
V
GS2
20
40
V/C
V
DG
= 10V, I
D
= 5 mA
T
A
= 55C
T
T
B
= 25C
Transconductance Ratio
g
fs1
/ g
fs2
0.95
1
0.95
1
V
DG
= 10V, I
D
= 5 mA
f = 1 kHz
VHF Amplifiers
Wideband Differential
Amplifiers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/14/99 11:32 AM Page B-47
PDF 
ZIP