01/99
B-43
IFN860
Dual N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
20 V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation
400 mW
Power Derating
2.3 mW/C
Storage Temperature Range
65C to 200C
TO71 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 5 Source,
6 Drain, 7 Gate
At 25C free air temperature:
IFN860
Process NJ450L
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
20
V
I
G
= 1 A, V
DS
= V
Gate Reverse Leakage Voltage
I
GSS
3
nA
V
GS
= 10V, V
DS
= V
Gate Source Cutoff Voltage
V
GS(OFF)
0.3
3
V
V
DS
= 10V, I
D
= 100 A
Drain Saturation Current (Pulsed)
I
DSS
10
mA
V
DS
= 10V, V
GS
= V
Differential Gate Source Voltage
|V
GS1
V
GS2
|
25
mV
V
DS
= 10V, I
D
= 100 A
Dynamic Electrical Characteristics
Transconductance
g
m
25
40
mS
V
DS
= 10V, I
D
= 10 mA
f = 1 kHz
Common Source Input Capacitance
C
iss
30
35
pF
V
DS
= 10V, I
D
= 10 mA
f = 1 MHz
Common Source Reverse Transfer
C
rss
17
20
pF
V
DS
= 10V, I
D
= 10 mA
f = 1 MHz
Capacitance
Equivalent Short Circuit
e
N
2
nV/
Hz
V
DG
= 3V, I
D
= 10 mA
f = 1 kHz
Input Noise Voltage
Low-Noise Audio Amplifier
Equivalent to Crystalonics
CD860
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/14/99 12:22 PM Page B-43
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