B-68
01/99
U311
N-Channel Silicon Junction Field-Effect Transistor
Mixer
Oscillator
VHF/UHF Amplifier
Absolute maximum ratings at T
A
= 25C.
Reverse Gate Source & Reverse Gate Drain Voltage
25 V
Continuous Forward Gate Current
10 mA
Continuous Device Power Dissipation
300 mW
Power Derating
2.4 mW/C
TO72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
At 25C free air temperature:
U311
Process NJ72L
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
25
V
I
G
= 1 A, V
DS
= V
Gate Reverse Current
I
GSS
150
pA
V
GS
= 15V, V
DS
= V
150
nA
V
GS
= 15V, V
DS
= V
T
A
= 150C
Gate Source Cutoff Voltage
V
GS(OFF)
1
6
V
V
DS
= 10V, I
D
= 1 nA
Gate Source Forward Voltage
V
GS(F)
1
V
V
DS
= V, I
G
= 1 mA
Drain Saturation Current (Pulsed)
I
DSS
20
60
mA
V
DS
= 10V, V
GS
= V
Dynamic Electrical Characteristics
Common Gate Forward Transconductance
g
fg
1000
17000
S
V
DS
= 10V, I
D
= 10 mA
f = 1 kHz
Common Gate Output Conductance
g
og
250
S
V
DS
= 10V, I
D
= 10 mA
f = 1 kHz
Gate Drain Capacitance
C
dg
2.5
pF
V
DS
= 10V, I
D
= 10 mA
f = 1 MHz
Gate Source Capacitance
C
gs
5
pF
V
DS
= 10V, I
D
= 10 mA
f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-68
PDF 
ZIP