01/99
B-69
U350
Hybrid Quad Silicon Junction Field-Effect Transistor Array
Absolute maximum ratings at T
A
= 25C.
Reverse Gate Source & Reverse Gate Drain Voltage
25 V
Gate Current
25 mA
Continuous Device Power Dissipation
400 mW
Power Derating
3.2 mW/C
TO78 Package
Dimensions in Inches (mm)
Pin Configuration
1 Gate 1 & 3, 2 Drain 1 & 4,
3 Source 1 & 2, 4 Ground & Case,
5 Source 3 & 4, 6 Drain 2 & 3,
7 Gate 2 & 4, 8 Omitted
At 25C free air temperature:
U350
Four Matched Process NJ72L
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
25
V
I
G
= 1 A, V
DS
= V
Gate Reverse Current
I
GSS
1
nA
V
GS
= 15V, V
DS
= V
1
A
V
GS
= 15V, V
DS
= V
T
A
= 125C
Gate Source Cutoff Voltage
V
GS(OFF)
2
6
V
V
DS
= 10V, I
D
= 1 nA
Gate Source Forward Voltage
V
GS(F)
1
V
V
DS
= V, I
G
= 1 mA
Drain Saturation Current (Pulsed)
I
DSS
24
60
mA
V
DS
= 15V, V
GS
= V
Dynamic Electrical Characteristics
Drain Source ON Resistance
r
ds(on)
50
90
V
GS
= V, I
D
= mA
f = 1 kHz
Common Source
g
fs
10
18
mS
V
DS
= 10V, I
D
= 10 mA
f = 1 kHz
Forward Transconductance
Common Source Output Conductance
g
os
150
S
V
DS
= 10V, I
D
= 10 mA
f = 1 kHz
Drain Gate Capacitance
C
dgo
2.5
pF
V
GD
= 10V, I
S
= V
f = 1 MHz
Gate Source Capacitance
C
sgo
5
pF
V
GS
= 10V, I
D
= V
f = 1 MHz
(Conversion Gain)
G
c
4
dB
V
DS
= 20V, V
GS
= 1/2 V
GS(OFF)
f = 100 MHz
R
D
= 1,700
Noise Figure
NF
7
dB
V
DS
= 20V, V
GS
= 1/2 V
GS(OFF)
f = 100 MHz
R
D
= 1,700
Saturation Drain Current Ratio
I
DSS
/ I
DSS
0.9
1
V
DS
= 15V, V
DS
= V
Gate Source Cutoff Voltage Ratio
V
GS(OFF)
/ V
GS(OFF)
0.9
1
V
DS
= 15V, I
D
= 1 nA
Common Source
g
fs
/ g
fs
0.9
1
V
DS
= 15V, I
D
= 10 mA
f = 1 kHz
Forward Transconductance
Differential Output Conductance
Y
os
/ Y
os
0.9
1
V
DS
= 15V, I
D
= 10 mA
f = 1 kHz
Analog Multiplier
VHF Double-Balanced Mixer
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-69
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