01/99
C-9
VCR3P
P-Channel Silicon Voltage Controlled Resistor JFET
Absolute maximum ratings at T
A
= 5C.
Reverse Gate Source & Reverse Gate Drain Voltage
15 V
Continuous Forward Gate Current
10 mA
Continuous Device Power Dissipation
300 mW
Power Derating
2.4 mW/C
TO18 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Gate & Case, 3 Drain
At 25C free air temperature:
VCR3P
Process PJ99
Static Electrical Characteristics
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
15
V
I
G
= 1 A, V
DS
= V
Gate Reverse Current
I
GSS
20
nA
V
GS
= 15V, V
DS
= V
Gate Source Cutoff Voltage
V
GS(OFF)
1
5
V
I
D
= 1 A, V
DS
= 10V
Dynamic Electrical Characteristics
Drain Source ON Resistance
r
ds(on)
70
200
V
GS
= V, I
D
= A
f = 1 kHz
Drain Gate Capacitance
C
dg
25
pF
V
DG
= 10V, I
S
= A
f = 1 MHz
Source Gate Capacitance
C
sg
15
pF
V
GS
= 10V, I
D
= A
f = 1 MHz
Small Signal Attenuators
Filters
Amplifier Gain Control
Oscillator Amplitude Control
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page C-9
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