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Электронный компонент: 5962F9961801V9A

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1
TM
File Number
4874
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Copyright
Intersil Corporation 2000
HS-201HSRH
Radiation Hardened High Speed, Quad
SPST, CMOS Analog Switch
The HS-201HSRH is a monolithic CMOS analog switch
featuring power-off high input impedance, very fast switching
speeds and low ON resistance. Fabrication on our DI RSG
process assures SEL immunity and only very slight
sensitivity to low dose rate (ELDRS). These Class V/Q
devices are tested and guaranteed for 300krad (Si) total
dose performance.
Power-off high input impedance enables the use of this
device in redundant circuits without causing data bus signal
degradation. ESD protection, overvoltage protection, fast
switching times, low ON resistance, and guaranteed
radiation hardness, make the HS-201HSRH ideal for any
space application where improved switching performance is
required.
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center (DSCC). The SMD numbers
listed here must be used when ordering flight units.
Detailed electrical specifications for this device are
contained in SMD 5962-99618. A "hot-link" is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Features
Electrically Screened to DSCC SMD 5962-99618
QML Qualified per MIL-PRF-38535
Radiation Performance
- Guaranteed Total Dose Performance . . . . . 300krad (Si)
- SEL Immune . . . . . . . . . . . . . . . . . . . . .DI RSG Process
- Only Very Slightly Sensitive to Low Dose Rates
(Vertical PNP and NPN device architectures)
Overvoltage Protection (Power On, Switch Off). . . . . . .
30V
Power Off High Impedance . . . . . . . . . . . . . . . . . . .
17V
Fast Switching Times
- t
ON
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110ns (Max)
- t
OFF
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80ns (Max)
Low "ON" Resistance . . . . . . . . . . . . . . . . . . . 50
(Max)
Pin Compatible with Industry Standard 201 Types
Operating Supply Range . . . . . . . . . . . . . . . . .
10V to
15V
Wide Analog Voltage Range (
15V Supplies) . . . . . . .
15V
TTL Compatible
Applications
High Speed Multiplexing
Sample and Hold Circuits
Digital Filters
Operational Amplifier Gain Switching Networks
Integrator Reset Circuits
Pinout
HS1-201HSRH, SBDIP (CDIP2-T16)
HS9-201HSRH, FLATPACK (CDFP4-F16)
TOP VIEW
Ordering Information
ORDERING NUMBER
INTERNAL
MKT. NUMBER
TEMP.
RANGE (
o
C)
5962F9961801VEC
HS1-201HSRH-Q
-55 to 125
5962F9961801QEC
HS1-201HSRH-8
-55 to 125
5962F9961801VXC
HS9-201HSRH-Q
-55 to 125
5962F9961801QXC
HS9-201HSRH-8
-55 to 125
5962F9961801V9A
HS0-201HSRH-Q
-55 to 125
HS1-201HSRH/PROTO HS1-201HSRH/PROTO
-55 to 125
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
A1
OUT1
IN1
V-
GND
IN4
A4
OUT4
A2
IN2
V+
NC
IN3
OUT3
A3
OUT2
Data Sheet
June 2000
2
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Die Characteristics
DIE DIMENSIONS
2667
m x 4623
m (105 mils x 182 mils)
Thickness: 483
m
25.4
m (19 mils
1 mil)
INTERFACE MATERIALS
Glassivation
Type: Phosphorus Silicon Glass (PSG)
Thickness: 8.0k
+/-1.0k
Metallization
Type: Ti/AlCu
Thickness: 16.0k
+/- 2k
Substrate
Rad Hard Silicon Gate, Dielectric Isolation
Backside Finish
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density
<2.0 x 10
5
A/cm
2
Transistor Count
328
Metallization Mask Layout
HS-201HSRH
OUT4
IN4
GND
V-
IN1
A4
A3
A1
A2
OUT3
IN3
V+
IN2
OUT2
OUT1
HS-201HSRH