1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
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Copyright
Intersil Corporation 1999
Satellite Applications FlowTM (SAF) is a trademark of Intersil Corporation.
HS-139RH-T
Radiation Hardened Quad Voltage
Comparator
Intersil's Satellite Applications Flow
TM
(SAF) devices are fully
tested and guaranteed to 100kRAD total dose. These QML
Class T devices are processed to a standard flow intended
to meet the cost and shorter lead-time needs of large
volume satellite manufacturers, while maintaining a high
level of reliability.
The Radiation Hardened HS-139RH-T consists of four
independent single or dual supply voltage comparators on a
single monolithic substrate. The common mode input voltage
range includes ground, even when operated from a single
supply, and the low supply current make these comparators
suitable for low power applications. These types were
designed to directly interface with TTL and CMOS.
The HS-139RH-T is fabricated on our dielectrically isolated
Rad Hard Silicon Gate (RSG) process, which provides an
immunity to Single Event Latch-up and the capability of
highly reliable performance in any radiation environment.
Specifications
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HS-139RH-T
are contained in SMD 5962-98613. A "hot-link" is
provided on our homepage with instructions for
downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Intersil' Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
www.intersil.com/quality/manuals.asp
Features
QML Qualified Per MIL-PRF-38535 Requirements
Radiation Environment
- Latch-up Free Under Any Conditions
- Total Dose . . . . . . . . . . . . . . . . . . . . . . . 3 x 10
5
RAD(Si)
- SEU LET . . . . . . . . . . . . . . . . . . . . . . . 20MEV/cm
2
/mg
100V Output Voltage Withstand Capability
Differential Input Voltage Range Equal to the Supply
Voltage
Input Offset Voltage (V
IO
). . . . . . . . . . . . . . . . . 2mV(max)
Quiescent Supply Current . . . . . . . . . . . . . . . . 2mA(max)
Applications
Pulse Generators
Timing Circuitry
Level Shifting
Analog to Digital Conversion
Pinouts
HS-139RH-T (SBDIP), CDIP2-T14
TOP VIEW
HS-139RH-T (FLATPACK), CDFP3-F14
TOP VIEW
Ordering Information
ORDERING NUMBER
PART NUMBER
TEMP. RANGE
(
o
C)
5962R9861301TCC
HS1-139RH-T
-55 to 125
5962R9861301TXC
HS9-139RH-T
-55 to 125
NOTE: Minimum order quantity for -T is 150 units
through distribution, or 450 units direct.
OUT 2
OUT 1
V+
- IN 1
+ IN 1
- IN 2
+ IN 2
OUT 3
OUT 4
GND
+ IN 4
- IN 4
+ IN 3
- IN 3
1
2
3
4
5
6
7
14
13
12
11
10
9
8
14
13
12
11
10
9
8
2
3
4
5
6
7
1
OUT 2
OUT 1
V+
- IN 1
+ IN 1
- IN 2
- IN 2
OUT 3
OUT 4
GND
+ IN 4
- IN 4
+ IN 3
- IN 3
Data Sheet
July 1999
File Number
4646.1
2
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Die Characteristics
DIE DIMENSIONS:
3750
m x 2820
m (148 mils x 111 mils)
483
m
25.4
m (19 mils
1 mil)
INTERFACE MATERIALS
Glassivation
Type: Nitride (Si3N4) over Silox (SiO2
Nitride Thickness: 4.0kA +/- 0.5kA
Silox Thickness: 12.0kA +/- 1.3kA
Top Metallization
Type: AL Si Cu
Thickness: 16.0kA +/- 2kA
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Transistor Count:
49
Metallization Mask Layout
HS-139RH-T
GND
+IN4
-IN4
V+
-IN1
+IN1
+IN3
-IN3
+IN2
-IN2
OUT4
OUT3
OUT2
OUT1
(9)
(8)
(7)
(6)
(5)
(4)
(3)
(2)
(1)
(14)
(13)
(12)
(11)
(10)
HS-139RH-T
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