1
November 1997
ACS151MS
Radiation Hardened 8-Input Multiplexer
Features
QML Qualified Per MIL-PRF-38535 Requirements
1.25Micron Radiation Hardened SOS CMOS
Radiation Environment
- Latch-up Free Under any Conditions
- Total Dose . . . . . . . . . . . . . . . . . . . . . . 3 x 10
5
RAD(Si)
- SEU Immunity . . . . . . . . . . . <1 x 10
-10
Errors/Bit/Day
- SEU LET Threshold . . . . . . . . . . . >100MeV/(mg/cm
2
)
Input Logic Levels . . .V
IL
= (0.3)(V
CC
), V
IH
= (0.7)(V
CC
)
Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8mA
Quiescent Supply Current. . . . . . . . . . . . . . . . . . .400
A
Propagation Delay
- Enable to Output . . . . . . . . . . . . . . . . . . . . . . . . . 12ns
- Input or Address to Output . . . . . . . . . . . . . . . . . 20ns
Applications
Sensor Input Selection
Data Routing
High Frequency Switching
Description
The Radiation Hardened ACS151MS is an 8-Channel Multi-
plexer having three binary control inputs and an active low
enable input. The three binary input signals select the input
from 1 of 8 channels.
Complementary data outputs are provided for ease of system
design. If the enable input is high, the input signals are disre-
garded, the Y output is set high and the Y output is set low. All
inputs and outputs are buffered and are designed for balanced
propagation delay and transition times.
The ACS151MS is fabricated on a CMOS Silicon on Sapphire
(SOS) process, which provides an immunity to Single Event
Latch-up and the capability of highly reliable performance in
any radiation environment. These devices offer significant
power reduction and faster performance when compared to
ALSTTL types.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed below must be used when ordering.
Detailed Electrical Specifications for the ACS151 are
contained in SMD 5962-97640. A "hot-link" is provided
on our homepage with instructions for downloading.
http://www.intersil.com/data/sm/index.htm
Ordering Information
SMD PART NUMBER
INTERSIL PART NUMBER
TEMP. RANGE (
o
C)
PACKAGE
CASE OUTLINE
5962F9764001VEC
ACS151DMSR-02
-55 to 125
16 Ld SBDIP
CDIP2-T16
N/A
ACS151D/Sample-02
25
16 Ld SBDIP
CDIP2-T16
5962F9764001VXC
ACS151KMSR-02
-55 to 125
16 Ld Flatpack
CDFP4-F16
N/A
ACS151K/Sample-02
25
16 Ld Flatpack
CDFP4-F16
N/A
ACS151HMSR-02
25
Die
N/A
Pinouts
ACS151 (SBDIP)
TOP VIEW
ACS151 (FLATPACK)
TOP VIEW
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
I
3
I
2
I
1
I
0
Y
Y
GND
E
V
CC
I
5
I
6
I
7
S
0
S
1
S
2
I
4
I
3
I
2
I
1
I
0
Y
Y
E
GND
2
3
4
5
6
7
8
1
16
15
14
13
12
11
10
9
V
CC
I
4
I
5
I
6
I
7
S
0
S
1
S
2
File Number
4430
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
2
Die Characteristics
DIE DIMENSIONS:
Size: 2390
m x 2390
m (94mils x 94mils)
Thickness: 525
m
25
m (20.6mils
1mil)
Bond Pad: 110
m x 110
m (4.3mils x 4.3 mils)
METALLIZATION:
Type: Al
Metal 1 Thickness: 0.7
m
0.1
m
Metal 2 Thickness: 1.0
m
0.1
m
SUBSTRATE:
Silicon on Sapphire (SOS)
SUBSTRATE POTENTIAL:
Unbiased Insulator
BACKSIDE FINISH:
Sapphire
PASSIVATION:
Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30
m
0.15
m
SPECIAL INSTRUCTIONS
Bond V
CC
First
ADDITIONAL INFORMATION:
Worst Case Density: <2.0 x 10
5
A/cm
2
Transistor Count: 166
Metallization Mask Layout
ACS151MS
I
2
I
3
V
CC
I
4
I
1
I
0
Y
Y
I
5
I
6
I
7
S
0
E
GND
S
2
S
1
ACS151MS
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notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
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