1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
ACTS08MS
Radiation Hardened
Quad 2-Input AND Gate
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE
MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C
TOP VIEW
14 LEAD CERAMIC FLAT PACK
MIL-STD-1835 DESIGNATOR CDFP3-F14, LEAD FINISH C
TOP VIEW
A1
B1
Y1
A2
B2
Y2
GND
VCC
B4
A4
Y4
B3
A3
Y3
1
2
3
4
5
6
7
14
13
12
11
10
9
8
14
13
12
11
10
9
8
2
3
4
5
6
7
1
A1
B1
Y1
A2
B2
Y2
GND
VCC
B4
A4
Y4
B3
A3
Y3
Features
1.25 Micron Radiation Hardened SOS CMOS
Total Dose 300K RAD (Si)
Single Event Upset (SEU) Immunity
<1 x 10
-10
Errors/Bit-Day (Typ)
SEU LET Threshold >80 MEV-cm
2
/mg
Dose Rate Upset >10
11
RAD (Si)/s, 20ns Pulse
Latch-Up Free Under Any Conditions
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to ALSTTL Logic
DC Operating Voltage Range: 4.5V to 5.5V
Input Logic Levels
- VIL = 0.8V Max
- VIH = VCC/2 Min
Input Current
1
A at VOL, VOH
Description
The Intersil ACTS08MS is a radiation hardened quad 2-Input
AND Gate. A high on both inputs forces the output to a high
logic level.
The ACTS08MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of a
radiation hardened, high-speed, CMOS/SOS Logic Family.
April 1995
Truth Table
INPUTS
OUTPUT
An
Bn
Yn
L
L
L
L
H
L
H
L
L
H
H
H
NOTE: L = Logic Level Low, H = Logic Level High
Functional Diagram
An
Bn
(1, 4, 9, 12)
(2, 5, 10, 13)
Yn
(3, 6, 8, 11)
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
ACTS08DMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
14 Lead SBDIP
ACTS08KMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
14 Lead Ceramic Flatpack
ACTS08D/Sample
+25
o
C
Sample
14 Lead SBDIP
ACTS08K/Sample
+25
o
C
Sample
14 Lead Ceramic Flatpack
ACTS08HMSR
+25
o
C
Die
Die
Spec Number
518851
File Number
3994
2
Specifications ACTS08MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +6.0V
Input Voltage Range . . . . . . . . . . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .
50mA
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
(All voltages reference to VSS)
Thermal Impedance
JA
JC
DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
74
o
C/W
24
o
C/W
Flatpack . . . . . . . . . . . . . . . . . . . . . . . . . .
116
o
C/W
30
o
C/W
Maximum Package Power Dissipation at +125
o
C
DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7W
Flatpack . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4W
Maximum Device Power Dissipation . . . . . . . . . . . . . . . . . . .(TBD)W
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Gates
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . 10ns/ V Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . VCC to VCC/2V
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
5
A
2, 3
+125
o
C, -55
o
C
-
100
A
Delta ICC
DICC
VCC = 5.5V
VIN = VCC or GND
1 Input = 3.4V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
1.6
mA
Output Current
(Source)
IOH
VCC = VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V (Note 2)
1
+25
o
C
-12
-
mA
2, 3
+125
o
C, -55
o
C
-8
-
mA
Output Current
(Sink)
IOL
VCC = VIH = 4.5V,
VOUT = 0.4V,
VIL = 0V (Note 2)
1
+25
o
C
12
-
mA
2, 3
+125
o
C, -55
o
C
8
-
mA
Output Voltage High
VOH
VCC = 5.5V, VIH = 2.75V,
IOH = -50
A, VIL = 0.80V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC -0.1
-
V
VCC = 4.5V, VIH = 2.25V,
IOH = -50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC -0.1
-
V
Output Voltage Low
VOL
VCC = 5.5V, VIH = 2.75V,
IOL = 50
A, VIL = 0.80V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 4.5V, VIH = 2.25V,
IOL = 50
A, VIL = 0.80V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Input Leakage
Current
IIN
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
0.5
A
2, 3
+125
o
C, -55
o
C
-
1.0
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 3)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
V
NOTE:
1. All voltages reference to device GND.
2. Force/measure functions may be interchanged.
3. Per functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518851
3
Specifications ACTS08MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
Input to Output
TPHL
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
13
ns
10, 11
+125
o
C, -55
o
C
2
15
ns
TPLH
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
14
ns
10, 11
+125
o
C, -55
o
C
2
15
ns
NOTES:
1. All voltages referenced to device GND.
2. Measurements made with RL = 500
, CL = 50pF, Input TR = TF = 3ns.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTE
TEMP
LIMITS
UNITS
MIN
TYP
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
1
+25
o
C
-
TBD
-
pF
1
+125
o
C
-
TBD
-
pF
Input Capacitance
CIN
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
1
+25
o
C
-
-
10
pF
1
+125
o
C
-
-
10
pF
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
RAD LIMITS
UNITS
MIN
MAX
Supply Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
100
A
Delta ICC
ICC
VCC - 5.5V, VIN = VCC or GND
1 Input = 3.4V
+25
o
C
-
1.6
mA
Output Current (Source)
IOH
VCC = VIH = 4.5V, VIL = 0,
VOUT = VCC -0.4V
+25
o
C
-8
-
mA
Output Current (Sink)
IOL
VCC = VIH = 4.5V, VIL = 0,
VOUT = 0.4V
+25
o
C
8
-
mA
Output Voltage High
VOH
VCC = 5.5V, VIH = 2.75V,
VIL = 0.80V, IOH = -50
A
+25
o
C
VCC -0.1
-
V
VCC = 4.5V, VIH = 2.25V,
VIL = 0.80V, IOH = -50
A
+25
o
C
VCC -0.1
-
V
Output Voltage Low
VOL
VCC = 5.5V, VIH = 2.75V,
VIL = 0.80V, IOH = 50
A
+25
o
C
-
0.1
V
VCC = 4.5V, VIH = 2.25V,
VIL = 0.80V, IOH = 50
A
+25
o
C
-
0.1
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
1
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.80V (Note 2)
+25
o
C
-
-
V
Propagation Delay
Input to Output
TPHL,
TPLH
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
2
15
ns
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518851
4
Specifications ACTS08MS
TABLE 5. DELTA PARAMETERS (+25
o
C)
PARAMETER
SYMBOL
(NOTE 1)
DELTA LIMIT
UNITS
Supply Current
ICC
1.0
A
Output Current
IOL/IOH
15
%
NOTE:
1. All delta calculations are referenced to 0 hour readings or pre-life readings.
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Preburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test 1 (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test 2 (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Interim Test 3 (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Group A (Note 1)
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6
Sample/5005
1, 7, 9
Group D
Sample/5005
1, 7, 9
NOTE:
1. Alternate Group A testing may be exercised in accordance with MIL-STD-883, Method 5005.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUP
METHOD
TEST
READ AND RECORD
PRE RAD
POST RAD
PRE RAD
POST RAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
1, 9
Table 4 (Note 1)
NOTE:
1. Except FN test which will be performed 100% Go/No-Go.
TABLE 8. BURN-IN TEST CONNECTIONS (+125
o
C < TA < 139
o
C)
OPEN
GROUND
1/2 VCC = 3V
0.5V
VCC = 6V
0.5V
OSCILLATOR
50kHz
25kHz
STATIC BURN-IN I (Note 1)
-
1, 2, 4, 5, 7, 9, 10,
12, 13
3, 6, 8, 11
14
-
-
STATIC BURN-IN II (Note 1)
-
7
3, 6, 8, 11
1, 2, 4, 5, 9, 10, 12, 13, 14
-
-
DYNAMIC BURN-IN TEST CONNECTIONS (Note 1)
-
7
3, 6, 8, 11
14
1, 2, 4, 5, 9, 10, 12, 13
-
NOTE:
1. Each pin except VCC and GND will have a series resistor of 500
5%.
TABLE 9. IRRADIATION TEST CONNECTIONS (TA = +25
o
C,
5
o
C)
FUNCTION
OPEN
GROUND
VCC = 5V
0.5V
Irradiation Circuit (Note 1)
3, 6, 8, 11
7
1, 2, 4, 5, 9, 10, 11, 12, 13, 14
NOTE:
1. Each pin except VCC and GND will have a series resistor of 47k
5%. Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures.
Spec Number
518851
5
Specifications ACTS08MS
Spec Number
518851
Propagation Delay Timing Diagram and Load Circuit
Intersil - Space Products MS Screening
Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM)
Radiation Verification (Each Wafer) Method 1019,
4 Samples/Wafer, 0 Rejects
100% Nondestructive Bond Pull Method 2023
100% Internal Visual Inspection Method 2010
100% Temperature Cycling Method 1010 Condition C
(-65
o
to +150
o
C)
100% Constant Acceleration
100% PIND Testing
100% External Visual Inspection
100% Serialization
100% Initial Electrical Test
100% Static Burn-In 1 Method 1015, 24 Hours at +125
o
C Min
100% Interim Electrical Test 1 (Note 1)
100% Static Burn-In 2 Method 1015, 24 Hours at +125
o
C Min
100% Interim Electrical Test 2 (Note 1)
100% Dynamic Burn-In Method 1015, 240 Hours at +125
o
C
or 180 Hours at +135
o
C
100% Interim Electrical Test 3 (Note 1)
100% Final Electrical Test
100% Fine and Gross Seal Method 1014
100% Radiographics Method 2012 (2 Views)
100% External Visual Method 2009
Group A (All Tests) Method 5005 (Class S)
Group B (Optional) Method 5005 (Class S) (Note 2)
Group D (Optional) Method 5005 (Class S) (Note 2)
CSI and/or GSI (Optional) (Note 2)
Data Package Generation (Note 3)
NOTES:
1. Failures from interim electrical tests 1 and 2 are combined for determining PDA (PDA = 5% for subgroups 1, 7, 9 and delta failures com-
bined, PDA = 3% for subgroup 7 failures). Interim electrical tests 3 PDA (PDA = 5% for subgroups 1, 7, 9 and delta failures combined,
PDA = 3% for subgroup 7 failures).
2. These steps are optional, and should be listed on the purchase order if required.
3. Data Package Contents:
Cover Sheet (P.O. Number, Customer Number, Lot Date Code, Intersil Number, Lot Number, Quantity).
Certificate of Conformance (as found on shipper).
Lot Serial Number Sheet (Good Unit(s) Serial Number and Lot Number).
Variables Data (All Read, Record, and delta operations).
Group A Attributes Data Summary.
Wafer Lot Acceptance Report (Method 5007) to include reproductions of SEM photos. NOTE: SEM photos to include percent of step coverage.
X-Ray Report and Film, including penetrometer measurements.
GAMMA Radiation Report with initial shipment of devices from the same wafer lot; containing a Cover Page, Disposition, RAD Dose,
Lot Number, Test Package, Spec Number(s), Test Equipment, etc. Irradiation Read and Record data will be on file at Intersil.
VS
INPUT
OUTPUT
VIH
VSS
VOH
VOL
TPLH
TPHL
VS
AC VOLTAGE LEVELS
PARAMETER
ACTS
UNITS
VCC
4.50
V
VIH
3.00
V
VS
1.30
V
VIL
0
V
GND
0
V
DUT
TEST
CL
RL
POINT
50pF
500
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