1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
ACTS373MS
Radiation Hardened
Octal Transparent Latch, Three-State
Pinouts
20 LEAD CERAMIC DUAL-IN-LINE
MIL-STD-1835 DESIGNATOR, CDIP2-T20, LEAD FINISH C
TOP VIEW
20 LEAD CERAMIC FLATPACK
MIL-STD-1835 DESIGNATOR, CDFP4-F20, LEAD FINISH C
TOP VIEW
11
12
13
14
15
16
17
18
20
19
10
9
8
7
6
5
4
3
2
1
OE
Q0
D0
D1
Q1
Q2
D3
D2
Q3
GND
VCC
D7
D6
Q6
Q7
Q5
D5
D4
Q4
LE
2
3
4
5
6
7
8
1
20
19
18
17
16
15
14
13
OE
Q0
D0
D1
Q1
Q2
D2
D3
9
10
12
11
Q3
GND
VCC
Q7
D7
D6
Q6
Q5
D5
D4
Q4
LE
April 1995
Truth Table
OE
LE
D
Q
L
H
H
H
L
H
L
L
L
L
I
L
L
L
h
H
H
X
X
Z
NOTE:
L = Low Voltage Level
H = High Voltage Level
X = Don't Care
Z = High Impedance State
I
= Low voltage level one set-up time prior to the high to low latch enable transition
h = High voltage level one set-up time prior to the high to low latch enable transition
Functional Diagram
D
Q
LE
D
LE
Q
OE
LATCH
COMMON
OE
1 OF 8
(3, 4, 7, 8, 13,
14, 17, 18)
(2, 5, 6, 9, 12,
15, 16, 19)
(1)
(11)
CONTROLS
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
ACTS373DMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
20 Lead SBDIP
ACTS373KMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
20 Lead Ceramic Flatpack
ACTS373D/Sample
+25
o
C
Sample
20 Lead SBDIP
ACTS373K/Sample
+25
o
C
Sample
20 Lead Ceramic Flatpack
ACTS373HMSR
+25
o
C
Die
Die
Spec Number
518800
File Number
4000
Features
1.25 Micron Radiation Hardened SOS CMOS
Total Dose 300K RAD (Si)
Single Event Upset (SEU) Immunity
<1 x 10
-10
Errors/Bit-Day (Typ)
SEU LET Threshold >80 MEV-cm
2
/mg
Dose Rate Upset >10
11
RAD (Si)/s, 20ns Pulse
Latch-Up Free Under Any Conditions
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to ALSTTL Logic
DC Operating Voltage Range: 4.5V to 5.5V
Input Logic Levels
- VIL = 0.8V Max
- VIH = VCC/2V Min
Input Current
1
A at VOL, VOH
Description
The Intersil ACTS373MS is a radiation hardened octal transpar-
ent latch with three-state outputs. The outputs are transparent to
the inputs when the latch enable (LE) is high. When the LE goes
low, the data is latched. When the Output Enable (OE) is high,
the outputs are in the high impedance state. The latch operation
is independent of the state of the output enable.
The ACTS373MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of the
radiation hardened, high-speed, CMOS/SOS Logic Family.
2
Specifications ACTS373MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +6.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .
50mA
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
(All Voltages Reference to VSS)
Thermal Impedance
JA
JC
DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
72
o
C/W
24
o
C/W
Flatpack . . . . . . . . . . . . . . . . . . . . . . . . . .
107
o
C/W
28
o
C/W
Maximum Package Power Dissipation at +125
o
C
DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7W
Flatpack . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Maximum Device Power Dissipation . . . . . . . . . . . . . . . . . . .(TBD)W
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121 Gates
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . . 10ns/V Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . VCC to VCC/2V
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 0.8V
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
20
A
2, 3
+125
o
C, -55
o
C
-
400
A
Output Current
(Source)
IOH
VCC = VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V, (Note 2)
1
+25
o
C
-12
-
mA
2, 3
+125
o
C, -55
o
C
-8
-
mA
Output Current
(Sink)
IOL
VCC = VIH = 4.5V,
VOUT = 0.4V, VIL = 0V,
(Note 2)
1
+25
o
C
12
-
mA
2, 3
+125
o
C, -55
o
C
8
-
mA
Output Voltage High
VOH
VCC = 5.5V, VIH = 2.75V
VIL = 0.8V, IOH = -50
A
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC -
0.1
-
V
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, IOH = -50
A
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC -
0.1
-
V
Output Voltage Low
VOL
VCC = 5.5V, VIH = 2.75V
VIL = 0.8V, IOH = 50
A
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, IOH = 50
A
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Input Leakage
Current
IIN
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
0.5
A
2, 3
+125
o
C, -55
o
C
-
1.0
A
Three-State Output
Leakage Current
IOZ
VCC = 5.5V,
Force Voltage = 0V or VCC
1
+25
o
C
-
1
A
2, 3
+125
o
C, -55
o
C
-
35
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, (Note 3)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
V
NOTE:
1. All voltages referenced to device GND.
2. Force/measure functions may be interchanged.
3. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518800
3
Specifications ACTS373MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
TPHL1
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
19
ns
10, 11
+125
o
C, -55
o
C
2
21
ns
TPLH1
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
18
ns
10, 11
+125
o
C, -55
o
C
2
20
ns
TPHL2
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
17
ns
10, 11
+125
o
C, -55
o
C
2
18
ns
TPLH2
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
17
ns
10, 11
+125
o
C, -55
o
C
2
19
ns
TPZL1
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
18
ns
10, 11
+125
o
C, -55
o
C
2
20
ns
TPLZ1
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
18
ns
10, 11
+125
o
C, -55
o
C
2
18
ns
TPHZ1
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
19
ns
10, 11
+125
o
C, -55
o
C
2
20
ns
TPZH1
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
17
ns
10, 11
+125
o
C, -55
o
C
2
18
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTE
TEMP
LIMITS
UNITS
MIN
TYP
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
1
+25
o
C
-
17
-
pF
+125
o
C
-
21
-
pF
Input Capacitance
CIN
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
1
+25
o
C
-
-
10
pF
+125
o
C
-
-
10
pF
Output Capacitance
COUT
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
1
+25
o
C
-
-
20
pF
+125
o
C
-
-
20
pF
Pulse Width Time
TW
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25
o
C
7
-
-
ns
+125
o
C
7
-
-
ns
Setup Time
TSU
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25
o
C
5
-
-
ns
+125
o
C
5
-
-
ns
Hold Time
TH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25
o
C
3
-
-
ns
+125
o
C
3
-
-
ns
NOTES:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
Spec Number
518800
4
Specifications ACTS373MS
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
TEMP
RAD LIMITS
UNITS
MIN
MAX
Supply Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
400
A
Output Current (Source)
IOH
VCC = VIH = 4.5V,
VOUT = VCC -0.4V, VIL = 0
+25
o
C
-8
-
mA
Output Current (Sink)
IOL
VCC = VIH = 4.5V, VOUT = 0.4V,
VIL = 0
+25
o
C
8
-
mA
Output Voltage High
VOH
VCC = 5.5V, VIH = 2.75V,
VIL = 0.8V, IOH = -50
A
+25
o
C
VCC -0.1
-
V
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, IOH = -50
A
+25
o
C
VCC -0.1
-
V
Output Voltage Low
VOL
VCC = 5.5V, VIH = 2.75V,
VIL = 0.8V, IOH = 50
A
+25
o
C
-
0.1
V
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, IOH = 50
A
+25
o
C
-
0.1
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
1
A
Three-State Output
Leakage Current
IOZ
VCC = 5.5V,
Force Voltage = 0V or VCC
+25
o
C
-
35
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, (Note 2)
+25
o
C
-
-
V
Propagation Delay
TPHL1
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
2
21
ns
TPLH1
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
2
20
ns
TPHL2
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
2
18
ns
TPLH2
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
2
19
ns
TPZL1
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
2
20
ns
TPLZ1
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
2
18
ns
TPHZ1
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
2
20
ns
TPZH1
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
2
18
ns
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
TABLE 5. DELTA PARAMETERS (+25
o
C)
PARAMETER
SYMBOL
(NOTE 1)
DELTA LIMIT
UNITS
Supply Current
ICC
4.0
A
Three-State Leakage Current
IOZ
200
nA
Output Current
IOL/IOH
15
%
NOTE:
1. All delta calculations are referenced to 0 hour readings or pre-life readings.
Spec Number
518800
5
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Preburn-In)
100%/5004
1, 7, 9
ICC, IOL/H, IOZL/H
Interim Test 1 (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H, IOZL/H
Interim Test 2 (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H, IOZL/H
PDA
100%/5004
1, 7, 9, Deltas
Interim Test 3 (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H, IOZL/H
PDA
100%/5004
1, 7, 9, Deltas
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Group A (Note 1)
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6
Sample/5005
1, 7, 9
Group D
Sample/5005
1, 7, 9
NOTE:
1. Alternate Group A testing may be exercised in accordance with MIL-STD-883, Method 5005.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE
GROUPS
METHOD
TEST
READ AND RECORD
PRE RAD
POST RAD
PRE RAD
POST RAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
1, 9
Table 4 (Note 1)
NOTE:
1. Except FN test which will be performed 100% Go/No-Go.
TABLE 8. BURN-IN TEST CONNECTIONS (+125
o
C < TA < 139
o
C)
OPEN
GROUND
1/2 VCC = 3V
0.5V
VCC = 6V
0.5V
OSCILLATOR
50kHz
25kHz
STATIC BURN-IN 1 (Note 1)
-
1, 3, 4, 7, 8, 10, 11,
13, 14, 17, 18
2, 5, 6, 9, 12, 15, 16, 19
20
-
-
STATIC BURN-IN 2 (Note 1)
-
10
2, 5, 6, 9, 12, 15, 16, 19
1, 3, 4, 7, 8, 11, 13,
14, 17, 18, 20
-
-
DYNAMIC BURN-IN (Note 1)
-
1, 10
2, 5, 6, 9, 12, 15, 16, 19
20
11
3, 4, 7, 8, 13,
14, 17, 18
NOTE:
1. Each pin except VCC and GND will have a series resistor of 500
5%.
TABLE 9. IRRADIATION TEST CONNECTIONS (TA = +25
o
C,
5
o
C)
FUNCTION
OPEN
GROUND
VCC = 5V
0.5V
Irradiation Circuit (Note 1)
2, 5, 6, 9, 12, 15, 16, 19
10
1, 3, 4, 7, 8, 11, 13, 14, 17, 18, 20
NOTE:
1. Each pin except VCC and GND will have a series resistor of 47k
5%. Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures.
Specifications ACTS373MS
Spec Number
518800
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