Semiconductor
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS
|
Copyright
Harris Corporation 1998
BUZ45
9.6A, 500V, 0.600 Ohm, N-Channel Power
MOSFET
IThis is an N-Channel enhancement mode silicon gate
power field effect transistor designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA17435.
Features
9.6A, 500V
r
DS(ON)
= 0.600
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Symbol
Packaging
JEDEC TO-204AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
BUZ45
TO-204AA
BUZ45
NOTE: When ordering, use the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
Data Sheet
October 1998
File Number
2257.1
[ /Title
(BUZ45)
/Subject
(9.6A,
500V,
0.600
Ohm, N-
Channel
Power
MOS-
FET)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FET.
TO-
204AA)
/Creator
()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
pdfmark
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