Semiconductor
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS
|
Copyright
Harris Corporation 1998
BUZ45A
8.3A, 500V, 0.800 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA17425.
Features
8.3A, 500V
r
DS(ON)
= 0.800
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Symbol
Packaging
JEDEC TO-204AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
BUZ45A
TO-204AA
BUZ45A
NOTE: When ordering, use the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
Data Sheet
October 1998
File Number
2258.1
[ /Title
(BUZ45
A)
/Subject
(8.3A,
500V,
0.800
Ohm, N-
Channel
Power
MOS-
FET)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FET,
TO-
204AA)
/Creator
()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
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