1
CA3045, CA3046
General Purpose NPN Transistor Arrays
The CA3045 and CA3046 each consist of five general
purpose silicon NPN transistors on a common monolithic
substrate. Two of the transistors are internally connected to
form a differentially connected pair.
The transistors of the CA3045 and CA3046 are well suited to
a wide variety of applications in low power systems in the DC
through VHF range. They may be used as discrete
transistors in conventional circuits. However, in addition, they
provide the very significant inherent integrated circuit
advantages of close electrical and thermal matching.
Pinout
CA3045, (CERDIP)
CA3046 (PDIP, SOIC)
TOP VIEW
Features
Two Matched Transistors
- V
BE
Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5mV
- I
IO
Match. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
A (Max)
Low Noise Figure . . . . . . . . . . . . . . . . 3.2dB (Typ) at 1kHz
5 General Purpose Monolithic Transistors
Operation From DC to 120MHz
Wide Operating Current Range
Full Military Temperature Range
Applications
Three Isolated Transistors and One Differentially
Connected Transistor Pair for Low Power Applications at
Frequencies from DC Through the VHF Range
Custom Designed Differential Amplifiers
Temperature Compensated Amplifiers
See Application Note, AN5296 "Application of the CA3018
Integrated-Circuit Transistor Array" for Suggested
Applications
Ordering Information
PART NUMBER
(BRAND)
TEMP.
RANGE (
o
C)
PACKAGE
PKG.
NO.
CA3045F
-55 to 125
14 Ld CERDIP
F14.3
CA3046
-55 to 125
14 Ld PDIP
E14.3
CA3046M
(3046)
-55 to 125
14 Ld SOIC
M14.15
CA3046M96
(3046)
-55 to 125
14 Ld SOIC Tape
and Reel
M14.15
SUBSTRATE
1
2
3
4
5
6
7
14
13
12
11
10
9
8
DIFFERENTIAL
PAIR
Q
1
Q
5
Q
4
Q
3
Q
2
Data Sheet
September 1998
File Number
341.4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 1999
2
Absolute Maximum Ratings
Thermal Information
Collector-to-Emitter Voltage (V
CEO
) . . . . . . . . . . . . . . . . . . . . . 15V
Collector-to-Base Voltage (V
CBO
) . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector-to-Substrate Voltage (V
CIO
, Note 1) . . . . . . . . . . . . . . 20V
Emitter-to-Base Voltage (V
EBO
) . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current (I
C
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to 125
o
C
Thermal Resistance (Typical, Note 2)
JA
(
o
C/W)
JC
(
o
C/W)
PDIP Package . . . . . . . . . . . . . . . . . . .
180
N/A
CERDIP Package . . . . . . . . . . . . . . . . .
150
75
SOIC Package . . . . . . . . . . . . . . . . . . .
220
N/A
Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW
Maximum Junction Temperature (Hermetic Packages). . . . . . . .175
o
C
Maximum Junction Temperature (Plastic Package) . . . . . . . .150
o
C
Maximum Storage Temperature Range . . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300
o
C
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3045 and CA3046 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must
be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor ac-
tion.
2.
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
T
A
= 25
o
C, characteristics apply for each transistor in CA3045 and CA3046 as specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS
Collector-to-Base Breakdown Voltage
V
(BR)CBO
I
C
= 10
A, I
E
= 0
20
60
-
V
Collector-to-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, I
B
= 0
15
24
-
V
Collector-to-Substrate Breakdown Voltage
V
(BR)CIO
I
C
= 10
A, I
CI
= 0
20
60
-
V
Emitter-to-Base Breakdown Voltage
V
(BR)EBO
I
E
= 10
A, I
C
= 0
5
7
-
V
Collector Cutoff Current (Figure 1)
I
CBO
V
CB
= 10V, I
E
= 0
-
0.002
40
nA
Collector Cutoff Current (Figure 2)
I
CEO
V
CE
= 10V, I
B
= 0
-
See Fig. 2
0.5
A
Forward Current Transfer Ratio (Static Beta)
(Note 3) (Figure 3)
h
FE
V
CE
= 3V
I
C
= 10mA
-
100
-
-
I
C
= 1mA
40
100
-
-
I
C
= 10
A
-
54
-
-
Input Offset Current for Matched Pair Q
1
and Q
2
.
|I
IO1
- I
IO2
| (Note 3) (Figure 4)
V
CE
= 3V, I
C
= 1mA
-
0.3
2
A
Base-to-Emitter Voltage (Note 3) (Figure 5)
V
BE
V
CE
= 3V
I
E
= 1mA
-
0.715
-
V
I
E
= 10mA
-
0.800
-
V
Magnitude of Input Offet Voltage for Differential Pair
|V
BE1
- V
BE2
| (Note 3) (Figures 5, 7)
V
CE
= 3V, I
C
= 1mA
-
0.45
5
mV
Magnitude of Input Offset Voltage for Isolated
Transistors |V
BE3
- V
BE4
|, |V
BE4
- V
BE5
|,
|V
BE5
- V
BE3
| (Note 3) (Figures 5, 7)
V
CE
= 3V, I
C
= 1mA
-
0.45
5
mV
Temperature Coefficient of Base-to-Emitter
Voltage (Figure 6)
V
CE
= 3V, I
C
= 1mA
-
-1.9
-
mV/
o
C
Collector-to-Emitter Saturation Voltage
V
CES
I
B
= 1mA, I
C
= 10mA
-
0.23
-
V
Temperature Coefficient: Magnitude of Input Off-
set Voltage (Figure 7)
V
CE
= 3V, I
C
= 1mA
-
1.1
-
V/
o
C
DYNAMIC CHARACTERISTICS
Low Frequency Noise Figure (Figure 9)
NF
f = 1kHz, V
CE
= 3V, I
C
= 100
A,
Source Resistance = 1k
-
3.25
-
dB
Low Frequency, Small Signal Equivalent
Circuit Characteristics
Forward Current Transfer Ratio (Figure 11)
h
FE
f = 1kHz, V
CE
= 3V, I
C
= 1mA
-
110
-
-
Short Circuit Input Impedance (Figure 11)
h
IE
f = 1kHz, V
CE
= 3V, I
C
= 1mA
-
3.5
-
k
V
BE
T
---------------
V
IO
T
----------------
CA3045, CA3046
3
Open Circuit Output Impedance (Figure 11)
h
OE
f = 1kHz, V
CE
= 3V, I
C
= 1mA
-
15.6
-
S
Open Circuit Reverse Voltage Transfer Ratio
(Figure 11)
h
RE
f = 1kHz, V
CE
= 3V, I
C
= 1mA
-
1.8 x 10
-4
-
-
Admittance Characteristics
Forward Transfer Admittance (Figure 12)
Y
FE
f = 1kHz, V
CE
= 3V, I
C
= 1mA
-
31 - j1.5
-
-
Input Admittance (Figure 13)
Y
IE
f = 1kHz, V
CE
= 3V, I
C
= 1mA
-
0.3 + j0.04
-
-
Output Admittance (Figure 14)
Y
OE
f = 1kHz, V
CE
= 3V, I
C
= 1mA
-
0.001 + j0.03
-
-
Reverse Transfer Admittance (Figure 15)
Y
RE
f = 1kHz, V
CE
= 3V, I
C
= 1mA
-
See Fig. 14
-
-
Gain Bandwidth Product (Figure 16)
f
T
V
CE
= 3V, I
C
= 3mA
300
550
-
MHz
Emitter-to-Base Capacitance
C
EB
V
EB
= 3V, I
E
= 0
-
0.6
-
pF
Collector-to-Base Capacitance
C
CB
V
CB
= 3V, I
C
= 0
-
0.58
-
pF
Collector-to-Substrate Capacitance
C
CI
V
CS
= 3V, I
C
= 0
-
2.8
-
pF
NOTE:
3. Actual forcing current is via the emitter for this test.
Electrical Specifications
T
A
= 25
o
C, characteristics apply for each transistor in CA3045 and CA3046 as specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
FIGURE 1. TYPICAL COLLECTOR-TO-BASE CUTOFF CURRENT
vs TEMPERATURE FOR EACH TRANSISTOR
FIGURE 2. TYPICAL COLLECTOR-TO-EMITTER CUTOFF
CURRENT vs TEMPERATURE FOR EACH
TRANSISTOR
FIGURE 3. TYPICAL STATIC FORWARD CURRENT TRANSFER
RATIO AND BETA RATIO FOR Q
1
AND Q
2
vs
EMITTER CURRENT
FIGURE 4. TYPICAL INPUT OFFSET CURRENT FOR
MATCHED TRANSISTOR PAIR Q
1
Q
2
vs
COLLECTOR CURRENT
10
2
10
-1
10
1
10
-2
10
-3
10
-4
COLLECT
OR CUT
OFF CURRENT (nA)
0
25
50
75
100
125
TEMPERATURE (
o
C)
V
CB
= 15V
V
CB
= 10V
V
CB
= 5V
I
E
= 0
10
2
10
-1
10
1
10
-2
10
-3
COLLECT
OR CUT
OFF CURRENT (nA)
0
25
50
75
100
125
TEMPERATURE (
o
C)
I
B
= 0
V
CE
= 10V
V
CE
= 5V
10
3
EMITTER CURRENT (mA)
V
CE
= 3V
T
A
= 25
o
C
ST
A
TIC FOR
W
ARD CURRENT
TRANSFER RA
TIO (h
FE
)
BET
A RA
TIO
120
110
100
90
80
70
60
50
0.01
0.1
1.0
10
0.8
0.9
1.0
1.1
h
FE
h
FE1
h
FE2
-------------
OR
h
FE2
h
FE1
-------------
10
1.0
0.1
0.01
INPUT OFFSET CURRENT (
A)
0.01
0.1
1.0
10
COLLECTOR CURRENT (mA)
V
CE
= 3V
T
A
= 25
o
C
CA3045, CA3046
4
FIGURE 5. TYPICAL STATIC BASE-TO-EMITTER VOLTAGE
CHARACTERISTICS AND INPUT OFFSET VOLTAGE
FOR DIFFERENTIAL PAIR AND PAIRED ISOLATED
TRANSISTORS vs EMITTER CURRENT
FIGURE 6. TYPICAL BASE-TO-EMITTER VOLTAGE
CHARACTERISTIC vs TEMPERATURE FOR EACH
TRANSISTOR
FIGURE 7. TYPICAL INPUTOFFSET VOLTAGE CHARACTERISTICS
FOR DIFFERENTIAL PAIR AND PAIRED
ISOLATED TRANSISTORS vs TEMPERATURE
FIGURE 8. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT
FIGURE 9. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT
FIGURE 10. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT
Typical Performance Curves
(Continued)
0.8
0.7
0.6
0.5
0.4
0.01
0.1
1.0
10
B
ASE-T
O-EMITTER V
O
L
T
A
GE (V)
V
CE
= 3V
T
A
= 25
o
C
V
BE
INPUT OFFSET VOLTAGE
3
2
1
0
INPUT OFFSET V
O
L
T
A
GE (mV)
EMITTER CURRENT (mA)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
B
ASE-T
O-EMITTER V
O
L
T
A
GE (V)
-75
-50
-25
0
25
50
75
100
125
TEMPERATURE (
o
C)
V
CE
= 3V
I
E
= 3mA
I
E
= 1mA
I
E
= 0.5mA
4.00
3.00
2.00
0.75
0.50
0.25
INPUT OFFSET V
O
L
T
A
GE (mV)
0
-75
-50
-25
0
25
50
75
100
125
TEMPERATURE (
o
C)
I
E
= 10mA
I
E
= 1mA
I
E
= 0.1mA
V
CE
= 3V
V
CE
= 3V
R
S
= 500
T
A
= 25
o
C
NOISE FIGURE (dB)
COLLECTOR CURRENT (mA)
20
15
10
5
0
0.01
0.1
1.0
f = 0.1kHz
f = 1kHz
f = 10kHz
V
CE
= 3V
R
S
= 1000
T
A
= 25
o
C
NOISE FIGURE (dB)
COLLECTOR CURRENT (mA)
20
15
10
5
0
0.01
0.1
1
f = 0.1kHz
f = 1kHz
f = 10kHz
V
CE
= 3V
R
S
= 10000
T
A
= 25
o
C
NOISE FIGURE (dB)
COLLECTOR CURRENT (mA)
20
15
10
5
0
0.01
0.1
1
f = 0.1kHz
f = 1kHz
f = 10kHz
25
30
CA3045, CA3046
5
FIGURE 11. TYPICAL NORMALIZED FORWARD CURRENT
TRANSFER RATIO, SHORT CIRCUIT INPUT
IMPEDANCE, OPEN CIRCUIT OUTPUT IMPEDANCE,
AND OPEN CIRCUIT REVERSE VOLTAGE TRANSFER
RATIO vs COLLECTOR CURRENT
FIGURE 12. TYPICAL FORWARD TRANSFER ADMITTANCE vs
FREQUENCY
FIGURE 13. TYPICAL INPUT ADMITTANCE vs FREQUENCY
FIGURE 14. TYPICAL OUTPUT ADMITTANCE vs FREQUENCY
FIGURE 15. TYPICAL REVERSE TRANSFER ADMITTANCE vs
FREQUENCY
FIGURE 16. TYPICAL GAIN BANDWIDTH PRODUCT vs
COLLECTOR CURRENT
Typical Performance Curves
(Continued)
100
10
1.0
0.1
NORMALIZED h P
ARAMETERS
0.01
0.1
1.0
10
COLLECTOR CURRENT (mA)
V
CE
= 3V
f = 1kHz
T
A
= 25
o
C
h
OE
h
FE
h
RE
h
IE
h
FE
= 110
h
IE
= 3.5k
h
RE
= 1.88 x 10
-4
h
OE
= 15.6
S
AT
1mA
h
RE
h
IE
T
A
= 25
o
C, V
CE
= 3V, I
C
= 1mA
COMMON EMITTER CIRCUIT, BASE INPUT
FOR
W
ARD TRANSFER CONDUCT
ANCE (g
FE
)
OR SUSCEPT
ANCE (b
FE
) (mS)
FREQUENCY (MHz)
0.1
10
100
-20
-10
0
10
20
30
40
g
FE
b
FE
1
T
A
= 25
o
C, V
CE
= 3V, I
C
= 1mA
COMMON EMITTER CIRCUIT, BASE INPUT
INPUT CONDUCT
ANCE (g
IE
)
OR SUSCEPT
ANCE (b
IE
) (mS)
FREQUENCY (MHz)
0.1
10
100
0
1
2
3
4
5
6
g
IE
b
IE
1
T
A
= 25
o
C, V
CE
= 3V, I
C
= 1mA
COMMON EMITTER CIRCUIT, BASE INPUT
OUTPUT CONDUCT
ANCE (g
OE
)
OR SUSCEPT
ANCE (b
OE
) (mS)
FREQUENCY (MHz)
0
1
2
3
4
5
6
g
OE
b
OE
0.1
10
100
1
T
A
= 25
o
C, V
CE
= 3V, I
C
= 1mA
COMMON EMITTER CIRCUIT, BASE INPUT
REVERSE TRANSFER CONDUCT
ANCE (g
RE
)
OR SUSCEPT
ANCE (b
RE
) (mS)
FREQUENCY (MHz)
-2.0
-1.5
-1.0
-0.5
0
b
RE
1
100
10
g
RE
IS SMALL AT FREQUENCIES
LESS THAN 500MHz
800
700
600
500
400
300
200
100
1000
900
GAIN B
AND
WIDTH PR
ODUCT (MHz)
0
1
2
3
4
5
6
7
8
9
10
11
12
13 14
COLLECTOR CURRENT (mA)
V
CE
= 3V
T
A
= 25
o
C
CA3045, CA3046
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