7-464
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
CD4069UBMS
CMOS Hex Inverter
Pinout
CD4069UBMS
TOP VIEW
Functional Diagram
A
G = A
B
H = B
C
I = C
VSS
VDD
F
L = F
E
K = E
D
J = D
1
2
3
4
5
6
7
14
13
12
11
10
9
8
VSS = 7
VDD = 14
A
1
2
G = A
F
13
12
L = F
B
3
4
H = B
C
5
6
I = C
D
9
8
J = D
E
11
10
K = E
Features
High Voltage Types (20V Rating)
Standardized Symmetrical Output Characteristics
Medium Speed Operation: tPHL, tPLH = 30ns (typ) at
10V
100% Tested for Quiescent Current at 20V
Maximum Input Current of 1
A at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25
o
C
Meets All Requirements of JEDEC Tentative Standard
No. 13B, "Standard Specifications for Description of
`B' Series CMOS Devices"
Applications
Logic Inversion
Pulse Shaping
Oscillators
High-Input-Impedance Amplifiers
Description
CD4069UBMS types consist of six CMOS inverter circuits.
These devices are intended for all general-purpose inverter
applications where the medium-power TTL-drive and logic-
level conversion capabilities of circuits such as the CD4009
and CD4049 Hex Inverter/Buffers are not required.
The CD4069UBMS is supplied in these 14 lead outline pack-
ages:
Braze Seal DIP
H4H
Frit Seal DIP
H1B
Ceramic Flatpack
H3W
December 1992
File Number
3321
Schematic Diagram
FIGURE 1. SCHEMATIC DIAGRAM OF 1 OF 6 IDENTICAL INVERTERS
VDD
VSS
G = A
G
2(4, 6, 8, 10, 12)
A
1(3, 5, 9, 11, 13)
VDD
7-465
Specifications CD4069UBMS
Absolute Maximum Ratings
Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265
o
C
At Distance 1/16
1/32 Inch (1.59mm
0.79mm) from case for
10s Maximum
Thermal Resistance . . . . . . . . . . . . . . . .
ja
jc
Ceramic DIP and FRIT Package . . . . .
80
o
C/W
20
o
C/W
Flatpack Package . . . . . . . . . . . . . . . .
70
o
C/W
20
o
C/W
Maximum Package Power Dissipation (PD) at +125
o
C
For TA = -55
o
C to +100
o
C (Package Type D, F, K) . . . . . . 500mW
For TA = +100
o
C to +125
o
C (Package Type D, F, K) . . . . . Derate
Linearity at 12mW/
o
C to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTE 1)
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1
+25
o
C
-
0.5
A
2
+125
o
C
-
50
A
VDD = 18V, VIN = VDD or GND
3
-55
o
C
-
0.5
A
Input Leakage Current
IIL
VIN = VDD or GND
VDD = 20
1
+25
o
C
-100
-
nA
2
+125
o
C
-1000
-
nA
VDD = 18V
3
-55
o
C
-100
-
nA
Input Leakage Current
IIH
VIN = VDD or GND
VDD = 20
1
+25
o
C
-
100
nA
2
+125
o
C
-
1000
nA
VDD = 18V
3
-55
o
C
-
100
nA
Output Voltage
VOL15
VDD = 15V, No Load
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
50
mV
Output Voltage
VOH15
VDD = 15V, No Load (Note 3)
1, 2, 3
+25
o
C, +125
o
C, -55
o
C 14.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1
+25
o
C
0.53
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1
+25
o
C
1.4
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1
+25
o
C
3.5
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1
+25
o
C
-
-0.53
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1
+25
o
C
-
-1.8
mA
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1
+25
o
C
-
-1.4
mA
Output Current (Source)
IOH15
VDD = 15V, VOUT = 13.5V
1
+25
o
C
-
-3.5
mA
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
A
1
+25
o
C
-2.8
-0.7
V
P Threshold Voltage
VPTH
VSS = 0V, IDD = 10
A
1
+25
o
C
0.7
2.8
V
Functional
F
VDD = 2.8V, VIN = VDD or GND
7
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 20V, VIN = VDD or GND
7
+25
o
C
VDD = 18V, VIN = VDD or GND
8A
+125
o
C
VDD = 3V, VIN = VDD or GND
8B
-55
o
C
Input Voltage Low
(Note 2)
VIL
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
1.0
V
Input Voltage High
(Note 2)
VIH
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
4.0
-
V
Input Voltage Low
(Note 2)
VIL
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
2.5
V
Input Voltage High
(Note 2)
VIH
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
12.5
-
V
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
7-466
Specifications CD4069UBMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTES 1, 2)
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
TPHL
TPLH
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
110
ns
10, 11
+125
o
C, -55
o
C
-
149
ns
Transition Time
TTHL
TTLH
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
200
ns
10, 11
+125
o
C, -55
o
C
-
270
ns
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55
o
C and +125
o
C limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 5V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
0.25
A
+125
o
C
-
7.5
A
VDD = 10V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
0.5
A
+125
o
C
-
15
A
VDD = 15V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
0.5
A
+125
o
C
-
30
A
Output Voltage
VOL
VDD = 5V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
-
50
mV
Output Voltage
VOL
VDD = 10V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
-
50
mV
Output Voltage
VOH
VDD = 5V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
4.95
-
V
Output Voltage
VOH
VDD = 10V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
9.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1, 2
+125
o
C
0.36
-
mA
-55
o
C
0.64
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1, 2
+125
o
C
0.9
-
mA
-55
o
C
1.6
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1, 2
+125
o
C
2.4
-
mA
-55
o
C
4.2
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1, 2
+125
o
C
-
-0.36
mA
-55
o
C
-
-0.64
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1, 2
+125
o
C
-
-1.15
mA
-55
o
C
-
-2.0
mA
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1, 2
+125
o
C
-
-0.9
mA
-55
o
C
-
-2.6
mA
Output Current (Source)
IOH15
VDD =15V, VOUT = 13.5V
1, 2
+125
o
C
-
-2.4
mA
-55
o
C
-
-4.2
mA
Input Voltage Low
VIL
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25
o
C, +125
o
C,
-55
o
C
-
2
V
Input Voltage High
VIH
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25
o
C, +125
o
C,
-55
o
C
8
-
V
7-467
Specifications CD4069UBMS
Propagation Delay
TPHL
TPLH
VDD = 10V
1, 2, 3
+25
o
C
-
60
ns
VDD = 15V
1, 2, 3
+25
o
C
-
50
ns
Transition Time
TTHL
TTLH
VDD = 10V
1, 2, 3
+25
o
C
-
100
ns
VDD = 15V
1, 2, 3
+25
o
C
-
80
ns
Input Capacitance
CIN
Any Input
1, 2
+25
o
C
-
15
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on
initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1, 4
+25
o
C
-
2.5
A
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
A
1, 4
+25
o
C
-2.8
-0.2
V
N Threshold Voltage
Delta
VTN
VDD = 10V, ISS = -10
A
1, 4
+25
o
C
-
1
V
P Threshold Voltage
VTP
VSS = 0V, IDD = 10
A
1, 4
+25
o
C
0.2
2.8
V
P Threshold Voltage
Delta
VTP
VSS = 0V, IDD = 10
A
1, 4
+25
o
C
-
1
V
Functional
F
VDD = 18V, VIN = VDD or GND
1
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
1, 2, 3, 4
+25
o
C
-
1.35 x
+25
o
C
Limit
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25
o
C limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25
O
C
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - SSI
IDD
0.1
A
Output Current (Sink)
IOL5
20% x Pre-Test Reading
Output Current (Source)
IOH5A
20% x Pre-Test Reading
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Interim Test 3 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Final Test
100% 5004
2, 3, 8A, 8B, 10, 11
Group A
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
468
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Specifications CD4069UBMS
Group B
Subgroup B-5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6
Sample 5005
1, 7, 9
Group D
Sample 5005
1, 2, 3, 8A, 8B, 9
Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS
MIL-STD-883
METHOD
TEST
READ AND RECORD
PRE-IRRAD
POST-IRRAD
PRE-IRRAD
POST-IRRAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
1, 9
Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
FUNCTION
OPEN
GROUND
VDD
9V
-0.5V
OSCILLATOR
50kHz
25kHz
Static Burn-In 1
(Note 1)
2, 4, 6, 8, 10, 12
1, 3, 5, 7, 9, 11,
13
14
Static Burn-In 2
(Note 1)
2, 4, 6, 8, 10, 12
7
1, 3, 5, 9, 11, 13,
14
Dynamic Burn-In
(Note 1)
-
7
14
2, 4, 6, 8, 10, 12
1, 3, 5, 9, 11, 13
Irradiation
(Note 2)
2, 4, 6, 8, 10, 12
7
1, 3, 5, 9, 11, 13,
14
NOTES:
1. Each pin except VDD and GND will have a series resistor of 10K
5%, VDD = 18V
0.5V
2. Each pin except VDD and GND will have a series resistor of 47K
5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V
0.5V
Typical Performance Characteristics
FIGURE 2. MINIMUM AND MAXIMUM VOLTAGE TRANSFER
CHARACTERISTICS
FIGURE 3. TYPICAL VOLTAGE TRANSFER CHARACTERIS-
TICS AS A FUNCTION OF TEMPERATURE
TABLE 6. APPLICABLE SUBGROUPS
(Continued)
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
READ AND RECORD
AMBIENT TEMPERATURE (T
A
) = +25
o
C
VI
VO
SUPPLY VOLTAGE
(VDD) = 15V
10V
5V
OUTPUT VOL
T
AGE (VO) (V)
15.0
12.5
10.0
7.5
5.0
2.5
0
2.5
5.0
7.5
10.0
12.5
15.0
INPUT VOLTAGE (VI) (V)
SUPPLY VOLTAGE
(VDD) = 15V
10V
5V
OUTPUT VOL
T
AGE (VO) (V)
15.0
12.5
10.0
7.5
5.0
2.5
0
2.5
5.0
7.5
10.0
12.5
15.0
INPUT VOLTAGE (VI) (V)
17.5
17.5
20.0
-55
o
C
-55
o
C
-55
o
C
+125
o
C
+125
o
C
AMBIENT TEMPERATURE (T
A
)
= +125
o
C
7-469
CD4069UBMS
FIGURE 4. TYPICAL CURRENT AND VOLTAGE TRANSFER
CHARACTERISTICS)
FIGURE 5. TYPICAL OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
FIGURE 6. MINIMUM OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
FIGURE 7. TYPICAL OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
FIGURE 8. MINIMUM OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
FIGURE 9. TYPICAL PROPAGATION DELAY TIME vs LOAD
CAPACITANCE
Typical Performance Characteristics
(Continued)
AMBIENT TEMPERATURE (T
A
) = +25
o
C
SUPPLY VOLTAGE
(VDD) = 15V
10V
5V
OUTPUT VOL
T
AGE (VO) (V)
15.0
12.5
10.0
7.5
5.0
2.5
0
2.5
5.0
7.5
10.0
12.5
15.0
INPUT VOLTAGE (VI) (V)
17.5
15.0
12.5
10.0
7.5
5.0
2.5
17.5
0
SUPPL
Y CURRENT (IDD) (mA)
5V
10V
15V
ID
10V
5V
AMBIENT TEMPERATURE (T
A
) = +25
o
C
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
0
5
10
15
15
10
5
20
25
30
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
OUTPUT LOW (SINK) CURRENT (IOL) (mA)
10V
5V
AMBIENT TEMPERATURE (T
A
) = +25
o
C
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
0
5
10
15
7.5
5.0
2.5
10.0
12.5
15.0
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
OUTPUT LOW (SINK) CURRENT (IOL) (mA)
-10V
-15V
AMBIENT TEMPERATURE (T
A
) = +25
o
C
GATE-TO-SOURCE VOLTAGE (VGS) = -5V
0
-5
-10
-15
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
-20
-25
-30
0
-5
-10
-15
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
-10V
-15V
AMBIENT TEMPERATURE (T
A
) = +25
o
C
0
-5
-10
-15
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
0
-5
-10
-15
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
GATE-TO-SOURCE VOLTAGE (VGS) = -5V
0
20
40
60
80
100
100
80
60
40
20
PROP
AGA
TION DELA
Y TIME (tPLH, tPHL) (ns)
AMBIENT TEMPERATURE (T
A
) = +25
o
C
LOAD CAPACITANCE (CL) (pF)
SUPPLY VOLTAGE (VDD) = 5V
15V
10V
7-470
CD4069UBMS
FIGURE 10. TYPICAL PROPAGATION DELAY TIME vs SUPPLY
VOLTAGE
FIGURE 11. TYPICAL TRANSITION TIME vs LOAD
CAPACITANCE
FIGURE 12. TYPICAL DYNAMIC POWER DISSIPATION vs
FREQUENCY
FIGURE 13. VARIATION OF NORMALIZED PROPAGATION DELAY
TIME (tPHL AND tPLH) WITH SUPPLY VOLTAGE
FIGURE 14. DYNAMIC ELECTRICAL CHARACTERISTICS TEST CIRCUIT AND WAVEFORMS
Typical Performance Characteristics
(Continued)
15pF
LOAD CAPACITANCE (CL) = 50pF
AMBIENT TEMPERATURE (T
A
) = +25
o
C
PROP
AGA
TION DELA
Y TIME (tPHL, tPLH) (ns)
120
100
80
60
40
20
0
5
10
15
20
SUPPLY VOLTAGE (VDD) (V)
AMBIENT TEMPERATURE (T
A
) = +25
o
C
LOAD CAPACITANCE (CL) (pF)
0
40
60
80
100
20
0
50
100
150
200
SUPPLY VOLTAGE (VDD) = 5V
10V
15V
TRANSITION TIME (tTHL, tTLH) (ns)
AMBIENT TEMPERATURE (T
A
) = +25
o
C
SUPPLY VOLTAGE (VDD) = 15V
10
5
10
3
10
POWER DISSIP
A
TION PER INVERTER (
W)
10
2
10
4
INPUT FREQUENCY (fI) (kHz)
10
10
2
10
3
10
4
10
5
8
6
4
2
8
6
4
2
8
6
4
2
8
6
4
2
8
6
4
2
8
6
4
2
8
6
4
2
8
6
4
2
10V
5V
10V
LOAD CAPACITANCE (CL) = 50pF
(11pF FIXTURE + 39pF EXT)
CL = 15pF (11pF FIXTURE +4pF EXT)
SUPPLY VOLTAGE (VDD) VOLTS
2
1
NORMALIZED PROP
AGA
TION DELA
Y TIME
4
6
8
10
12
14
16
2
3
4
5
(tPHL, tPLH)
AMBIENT TEMPERATURE (T
A
) = -40
o
C TO +125
o
C
1
2
3
4
5
6
7
14
13
12
11
10
9
8
OUT
200k
CL = 50pF
PULSE GEN.
tr = tf = 20ns
IN
50
VDD
90%
50%
10%
90%
50%
10%
VDD
VDD
0
0
INPUT
INVERTING
OUTPUT
tr
tf
tTLH
tTHL
tPLH
tPHL
7-471
CD4069UBMS
Chip Dimensions and Pad Layout
Dimension in parenthesis are in millimeters and are
derived from the basic inch dimensions as indicated.
Grid graduations are in mils (10
-3
inch).
METALLIZATION:
Thickness: 11k
-
14k
, AL.
PASSIVATION:
10.4k - 15.6k
, Silane
BOND PADS:
0.004 inches X 0.004 inches MIN
DIE THICKNESS:
0.0198 inches - 0.0218 inches
FIGURE 15. HIGH-INPUT IMPEDANCE AMPLIFIER
FIGURE 16. TYPICAL RC OSCILLATOR CIRCUIT
FIGURE 17. TYPICAL CRYSTAL OSCILLATOR CIRCUIT
FIGURE 18. INPUT PULSE SHAPING CIRCUIT
(SCHMITT TRIGGER)
1/6 CD4069
IN
OUT
Rf
10 MEG
1/3 CD4069
RT
RS
CT
FOR TYPICAL COMPONENT
VALUES AND CIRCUIT PERFORMANCE,
SEE APPLICATION NOTE AN-6466
1/6 CD4069
Rf
XTAL
RS
CT
CS
FOR TYPICAL COMPONENT
VALUES AND CIRCUIT
PERFORMANCE, SEE
APPLICATION NOTES:
AN-6086 AND AN-6539
1/3 CD4069
Rf
IN
OUT
RS
UPPER SWITCHING POINT
RS + Rf
VP
Rf
VDD
2
LOWER SWITCHING POINT
VN
Rf - RS
Rf
Rf > RS
VDD
2
1
2
3
4
5
6
8
7
9
10
11
12
14
13
DIE SIZE:
48 X 48 (45 - 53)
(1.143 - 1.346)
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