7-1074
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
Pinout
CD4093BMSMS
TOP VIEW
Functional Diagram
A
B
J = A B
K = C D
C
D
VSS
VDD
H
G
M = G H
L = E F
F
E
1
2
3
4
5
6
7
14
13
12
11
10
9
8
A
B
J
K
C
D
VSS
VDD
H
G
M
L
F
E
1
2
3
4
5
6
7
14
13
12
11
10
9
8
J = A B
L = E F
M = G H
K = C D
Features
High Voltage Types (20V Rating)
Schmitt Trigger Action on Each Input With No External
Components
Hysteresis Voltage Typically 0.9V at VDD = 5V and
2.3V at VDD = 10V
Noise Immunity Greater than 50%
No Limit on Input Rise and Fall Times
Standardized, Symmetrical Output Characteristics
100% Tested for Quiescent Current at 20V
Maximum Input Current of 1
A at 18V Over Full Pack-
age Temperature Range, 100nA at 18V and +25
o
C
5V, 10V and 15V Parametric Ratings
Meets All Requirements of JEDEC Tentative Standard
No. 13B, "Standard Specifications for Description of
`B' Series CMOS Devices"
Applications
Wave and Pulse Shapers
High Noise Environment Systems
Monostable Multivibrators
Astable Multivibrators
NAND Logic
Description
CD4093BMS consists of four Schmitt trigger circuits. Each
circuit functions as a two input NAND gate with Schmitt trig-
ger action on both inputs. The gate switches at different
points for positive and negative going signals. The difference
between the positive voltage (VP) and the negative voltage
(VN) is defined as hysteresis voltage (VH) (see Figure 1).
The CD4093BMS is supplied in these 14 lead outline pack-
ages:
Braze Seal DIP
H4H
Frit Seal DIP
H1B
Ceramic Flatpack
H3W
File Number
3330
December 1992
CD4093BMS
CMOS Quad 2-Input
NAND Schmitt Triggers
7-1075
Specifications CD4093BMS
Absolute Maximum Ratings
Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265
o
C
At Distance 1/16
1/32 Inch (1.59mm
0.79mm) from case for
10s Maximum
Thermal Resistance . . . . . . . . . . . . . . . .
ja
jc
Ceramic DIP and FRIT Package . . . . .
80
o
C/W
20
o
C/W
Flatpack Package . . . . . . . . . . . . . . . .
70
o
C/W
20
o
C/W
Maximum Package Power Dissipation (PD) at +125
o
C
For TA = -55
o
C to +100
o
C (Package Type D, F, K) . . . . . . 500mW
For TA = +100
o
C to +125
o
C (Package Type D, F, K) . . . . . Derate
Linearity at 12mW/
o
C to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTE 1)
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1
+25
o
C
-
2
A
2
+125
o
C
-
200
A
VDD = 18V, VIN = VDD or GND
3
-55
o
C
-
2
A
Input Leakage Current
IIL
VIN = VDD or GND
VDD = 20
1
+25
o
C
-100
-
nA
2
+125
o
C
-1000
-
nA
VDD = 18V
3
-55
o
C
-100
-
nA
Input Leakage Current
IIH
VIN = VDD or GND
VDD = 20
1
+25
o
C
-
100
nA
2
+125
o
C
-
1000
nA
VDD = 18V
3
-55
o
C
-
100
nA
Output Voltage
VOL15
VDD = 15V, No Load
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
50
mV
Output Voltage
VOH15
VDD = 15V, No Load (Note 5)
1, 2, 3
+25
o
C, +125
o
C, -55
o
C 14.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1
+25
o
C
0.53
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1
+25
o
C
1.4
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1
+25
o
C
3.5
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1
+25
o
C
-
-0.53
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1
+25
o
C
-
-1.8
mA
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1
+25
o
C
-
-1.4
mA
Output Current (Source)
IOH15
VDD = 15V, VOUT = 13.5V
1
+25
o
C
-
-3.5
mA
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
A
1
+25
o
C
-2.8
-0.7
V
P Threshold Voltage
VPTH
VSS = 0V, IDD = 10
A
1
+25
o
C
0.7
2.8
V
Functional
F
VDD = 2.8V, VIN = VDD or GND
7
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 20V, VIN = VDD or GND
7
+25
o
C
VDD = 18V, VIN = VDD or GND
8A
+125
o
C
VDD = 3V, VIN = VDD or GND
8B
-55
o
C
Positive Trigger
Threshold Voltage
VP5V
VDD = 5V (Note 2)
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
2.2
3.6
V
VP15V
VDD = 15V (Note 3)
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
6.8
10.8
V
Positive Trigger
Threshold Voltage
VP5V
VDD = 5V (Note 4)
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
2.6
4.0
V
Negative Trigger
Threshold Voltage
VN5V
VDD = 5V (Note 2)
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
0.9
2.8
V
VN15V
VDD = 15V (Note 3)
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
4.0
7.4
V
Negative Trigger
Threshold Voltage
VN5V
VDD = 5V (Note 4)
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
1.4
3.2
V
Hysteresis Voltage
VH5V
VDD = 5V (Note 2)
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
0.3
1.6
V
VH15V
VDD = 15V (Note 3)
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
1.6
5.0
V
Hysteresis Voltage
VH5V
VDD = 5V (Note 4)
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
0.3
1.6
V
NOTES: 1. All voltages referenced to device GND, 100% testing being im-
plemented.
2. Inputs on terminals 1, 5, 8, 12
3. Input on Terminal 1
4. Input on terminals 1 and 2, 5 and 6, 8 and 9, or 12 and 13
5. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
7-1076
Specifications CD4093BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTES 1, 2)
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
TPHL
TPLH
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
380
ns
10, 11
+125
o
C, -55
o
C
-
513
ns
Transition Time
TTHL
TTLH
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
200
ns
10, 11
+125
o
C, -55
o
C
-
270
ns
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55
o
C and +125
o
C limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 5V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
1
A
+125
o
C
-
30
A
VDD = 10V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
2
A
+125
o
C
-
60
A
VDD = 15V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
2
A
+125
o
C
-
120
A
Output Voltage
VOL
VDD = 5V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
-
50
mV
Output Voltage
VOL
VDD = 10V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
-
50
mV
Output Voltage
VOH
VDD = 5V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
4.95
-
V
Output Voltage
VOH
VDD = 10V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
9.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1, 2
+125
o
C
0.36
-
mA
-55
o
C
0.64
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1, 2
+125
o
C
0.9
-
mA
-55
o
C
1.6
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1, 2
+125
o
C
2.4
-
mA
-55
o
C
4.2
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1, 2
+125
o
C
-
-0.36
mA
-55
o
C
-
-0.64
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1, 2
+125
o
C
-
-1.15
mA
-55
o
C
-
-2.0
mA
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1, 2
+125
o
C
-
-0.9
mA
-55
o
C
-
-1.6
mA
Output Current (Source)
IOH15
VDD =15V, VOUT = 13.5V
1, 2
+125
o
C
-
-2.4
mA
-55
o
C
-
-4.2
mA
Propagation Delay
TPHL
TPLH
VDD = 10V
1, 2, 3
+25
o
C
-
180
ns
VDD = 15V
1, 2, 3
+25
o
C
-
130
ns
Transition Time
TTHL
TTLH
VDD = 10V
1, 2, 3
+25
o
C
-
100
ns
VDD = 15V
1, 2, 3
+25
o
C
-
80
ns
7-1077
Specifications CD4093BMS
Positive Trigger
Threshold Voltage
VP10V
VDD = 10V
1, 2, 4
+25
o
C, +125
o
C,
-55
o
C
4.6
7.1
V
VP10V
VDD = 10V
1, 2, 5
+25
o
C, +125
o
C,
-55
o
C
5.6
8.2
V
VP15V
VDD = 15V
1, 2, 5
+25
o
C, +125
o
C,
-55
o
C
6.3
12.7
V
Negative Trigger
Threshold Voltage
VN10V
VDD = 10V
1, 2, 4
+25
o
C, +125
o
C,
-55
o
C
2.5
5.2
V
VN10V
VDD = 10V
1, 2, 5
+25
o
C, +125
o
C,
-55
o
C
3.4
6.6
V
VN15V
VDD = 15V
1, 2, 5
+25
o
C, +125
o
C,
-55
o
C
4.8
9.6
V
Hysteresis Voltage
VH10V
VDD = 10V
1, 2, 4
+25
o
C, +125
o
C,
-55
o
C
1.2
3.4
V
VH10V
VDD = 10V
1, 2, 5
+25
o
C, +125
o
C,
-55
o
C
1.2
3.4
V
VH15V
VDD = 15V
1, 2, 5
+25
o
C, +125
o
C,
-55
o
C
1.6
5.0
V
Input Capacitance
CIN
Any Input
1, 2
+25
o
C
-
7.5
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. Input on terminals 1, 5, 8, 12
5. Input on terminals 1 and 2, 5 and 6, 8 and 9, or 12 and 13
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1, 4
+25
o
C
-
7.5
A
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
A
1, 4
+25
o
C
-2.8
-0.2
V
N Threshold Voltage
Delta
VTN
VDD = 10V, ISS = -10
A
1, 4
+25
o
C
-
1
V
P Threshold Voltage
VTP
VSS = 0V, IDD = 10
A
1, 4
+25
o
C
0.2
2.8
V
P Threshold Voltage
Delta
VTP
VSS = 0V, IDD = 10
A
1, 4
+25
o
C
-
1
V
Functional
F
VDD = 18V, VIN = VDD or GND
1
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
1, 2, 3, 4
+25
o
C
-
1.35 x
+25
o
C
Limit
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25
o
C limit.
4. Read and Record
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
7-1078
Specifications CD4093BMS
Logic Diagram
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25
O
C
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-1
IDD
0.2
A
Output Current (Sink)
IOL5
20% x Pre-Test Reading
Output Current (Source)
IOH5A
20% x Pre-Test Reading
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Interim Test 3 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Final Test
100% 5004
2, 3, 8A, 8B, 10, 11
Group A
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6
Sample 5005
1, 7, 9
Group D
Sample 5005
1, 2, 3, 8A, 8B, 9
Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS
MIL-STD-883
METHOD
TEST
READ AND RECORD
PRE-IRRAD
POST-IRRAD
PRE-IRRAD
POST-IRRAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
1, 9
Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
FUNCTION
OPEN
GROUND
VDD
9V
-0.5V
OSCILLATOR
50kHz
25kHz
Static Burn-In 1
Note 1
3, 4, 10, 11
1, 2, 5-9, 12, 13
14
Static Burn-In 2
Note 1
3, 4, 10, 11
7
1, 2, 5, 6, 8,
9, 12-14
Dynamic Burn-
In Note 1
-
7
14
3, 4, 10, 11
1, 2, 5, 6,
8, 9, 12, 13
-
Irradiation
Note 2
3, 4, 10, 11
7
1, 2, 5, 6, 8,
9, 12-14
NOTES:
1. Each pin except VDD and GND will have a series resistor of 10K
5%, VDD = 18V
0.5V
2. Each pin except VDD and GND will have a series resistor of 47K
5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD
= 10V
0.5V
3 (4, 10, 11)
1 (5, 8, 12)
2 (6, 9, 13)
*
*
* All inputs protected by CMOS protection network
1 OF 4 SCHMITT TRIGGERS
VDD
VSS
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