ChipFind - документация

Электронный компонент: CD4510BMS

Скачать:  PDF   ZIP
1
CD4510BMS, CD4516BMS
CMOS Presettable Up/Down Counters
CD4510BMS Presettable BCD Up/Down Counter and the
CD4516BMS Presettable Binary Up/Down counter consist of
four synchronously clocked D-type flip-flops (with a gating
structure to provide T-type flip-flop capability) connected as
counters. These counters can be cleared by a high level on
the RESET line, and can be preset to any binary number
present on the jam inputs by a high level on the PRESET
ENABLE line. The CD4510BMS will count out of non-BCD
counter states in a maximum of two clock pulses in the up
mode, and a maximum of four clock pulses in the down mode.
If the CARRY IN input is held low, the counter advances up or
down on each positive-going clock transition. Synchronous
cascading is accomplished by connecting all clock inputs in
parallel and connecting the CARRY OUT of a less significant
stage to the CARRY IN of a more significant stage.
The CD4510BMS and CD4516BMS can be cascaded in the
ripple mode by connecting the CARRY OUT to the clock of
the next stage. If the UP/DOWN input changes during a ter-
minal count, the CARRY OUT must be gated with the clock,
and the UP/DOWN input must change while the clock is
high. This method provides a clean clock signal to the sub-
sequent counting stage. (See Figures 13, 14.)
These devices are similar to types MC14510 and MC14516.
The CD4510BMS and CD4516BMS are supplied in these
16-lead outline packages:
Features
High Voltage Types (20V Rating)
CD4510BMS - BCD Type
CD4516BMS - Binary Type
Medium Speed Operation
- fCL = 8MHz Typ. at 10V
Synchronous Internal Carry Propagation
Reset and Preset Capability
100% Tested for Quiescent Current at 20V
5V, 10V and 15V Parametric Ratings
Standardized Symmetrical Output Characteristics
Maximum Input Current of 1
A at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25
o
C
Noise Margin (Over Full Package/Temperature Range)
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
Meets All Requirements of JEDEC Tentative Standard
No. 13B, "Standard Specifications for Description of
`B' Series CMOS Devices"
Applications
Up/Down Difference Counting
Multistage Synchronous Counting
Multistage Ripple Counting
Synchronous Frequency Dividers
Pinout
CD4510BMS, CD4516BMS
TOP VIEW
Functional Diagram
Braze Seal DIP
*H4W
H45
Frit Seal DIP
*FBF
H1F
Ceramic Flatpack
H6W
*CD4510B Only
CD4516B Only
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
PRESET ENABLE
Q4
P4
P1
CARRY IN
Q1
VSS
CARRY OUT
VDD
Q3
P3
P2
Q2
UP/DOWN
RESET
CLOCK
Q1
Q2
Q3
Q4
6
11
14
2
P1
P2
P3
P4
4
12
13
3
CARRY OUT
7
CARRY IN
5
RESET
CLOCK
UP/DOWN
10
15
PRESET ENABLE
VDD = 16
VSS = 8
1
9
Data Sheet
December 1992
File Number
3338
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
2
Absolute Maximum Ratings
Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . . .
10mA
Operating Temperature Range . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Package Types D, F, K, H
Storage Temperature Range (TSTG). . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265
o
C
At Distance 1/16
1/32 Inch (1.59mm
0.79mm) from case for
10s Maximum
Thermal Resistance. . . . . . . . . . . . . . . .
ja
jc
Ceramic DIP and FRIT Package . . . .
80
o
C/W
20
o
C/W
Flatpack Package . . . . . . . . . . . . . . . .
70
o
C/W
20
o
C/W
Maximum Package Power Dissipation (PD) at +125
o
C
For TA = -55
o
C to +100
o
C (Package Type D, F, K) . . . . . .500mW
For TA = +100
o
C to +125
o
C (Package Type D, F, K) . . . . . Derate
Linearity at 12mW/
o
C to 200mW
Device Dissipation per Output Transistor. . . . . . . . . . . . . . . .100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175
o
C
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTE 1)
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1
+25
o
C
-
10
A
2
+125
o
C
-
1000
A
VDD = 18V, VIN = VDD or GND
3
-55
o
C
-
10
A
Input Leakage Current
IIL
VIN = VDD or GND
VDD = 20
1
+25
o
C
-100
-
nA
2
+125
o
C
-1000
-
nA
VDD = 18V
3
-55
o
C
-100
-
nA
Input Leakage Current
IIH
VIN = VDD or GND
VDD = 20
1
+25
o
C
-
100
nA
2
+125
o
C
-
1000
nA
VDD = 18V
3
-55
o
C
-
100
nA
Output Voltage
VOL15
VDD = 15V, No Load
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
50
mV
Output Voltage
VOH15
VDD = 15V, No Load (Note 3)
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
14.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1
+25
o
C
0.53
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1
+25
o
C
1.4
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1
+25
o
C
3.5
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1
+25
o
C
-
-0.53
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1
+25
o
C
-
-1.8
mA
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1
+25
o
C
-
-1.4
mA
Output Current (Source)
IOH15
VDD = 15V, VOUT = 13.5V
1
+25
o
C
-
-3.5
mA
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
A
1
+25
o
C
-2.8
-0.7
V
P Threshold Voltage
VPTH
VSS = 0V, IDD = 10
A
1
+25
o
C
0.7
2.8
V
Functional
F
VDD = 2.8V, VIN = VDD or GND
7
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 20V, VIN = VDD or GND
7
+25
o
C
VDD = 18V, VIN = VDD or GND
8A
+125
o
C
VDD = 3V, VIN = VDD or GND
8B
-55
o
C
Input Voltage Low
(Note 2)
VIL
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
1.5
V
Input Voltage High
(Note 2)
VIH
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
3.5
-
V
Input Voltage Low
(Note 2)
VIL
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
4
V
Input Voltage High
(Note 2)
VIH
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
11
-
V
NOTES: 1. All voltages referenced to device GND, 100% testing being im-
plemented.
2. Go/No Go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD. Limit is
0.050V max.
CD4510BMS, CD4516BMS
3
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTE 1, 2)
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
Clock to Q Output
TPHL1
TPLH1
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
400
ns
10, 11
+125
o
C, -55
o
C
-
540
ns
Propagation Delay
Preset or Reset to Q
TPHL2
TPLH2
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
420
ns
10, 11
+125
o
C, -55
o
C
-
567
ns
Propagation Delay
Clock to Carry Out
TPHL3
TPLH3
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
480
ns
10, 11
+125
o
C, -55
o
C
-
648
ns
Propagation Delay
Carry In to Carry Out
TPHL4
TPLH4
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
250
ns
10, 11
+125
o
C, -55
o
C
-
338
ns
Propagation Delay
Preset or Reset to Carry
Out
TPHL5
TPLH5
VDD = 5V, VIN = VDD or GND
(Note 3)
9
+25
o
C
-
640
ns
10, 11
+125
o
C, -55
o
C
-
864
ns
Transition Time
TTHL
TTLH
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
200
ns
10, 11
+125
o
C, -55
o
C
-
270
ns
Maximum Clock Input Fre-
quency
FCL
VDD = 5V, VIN = VDD or GND
9
+25
o
C
2
-
MHz
10, 11
+125
o
C, -55
o
C
1.48
-
MHz
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55
o
C and +125
o
C limits guaranteed, 100% testing being implemented.
3. Reset to Carry Out (TPLH) only.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 5V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
5
A
+125
o
C
-
150
A
VDD = 10V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
10
A
+125
o
C
-
300
A
VDD = 15V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
10
A
+125
o
C
-
600
A
Output Voltage
VOL
VDD = 5V, No Load
1, 2
+25
o
C, +125
o
C, -
55
o
C
-
50
mV
Output Voltage
VOL
VDD = 10V, No Load
1, 2
+25
o
C, +125
o
C, -
55
o
C
-
50
mV
Output Voltage
VOH
VDD = 5V, No Load
1, 2
+25
o
C, +125
o
C, -
55
o
C
4.95
-
V
Output Voltage
VOH
VDD = 10V, No Load
1, 2
+25
o
C, +125
o
C, -
55
o
C
9.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1, 2
+125
o
C
0.36
-
mA
-55
o
C
0.64
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1, 2
+125
o
C
0.9
-
mA
-55
o
C
1.6
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1, 2
+125
o
C
2.4
-
mA
-55
o
C
4.2
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1, 2
+125
o
C
-
-0.36
mA
-55
o
C
-
-0.64
mA
CD4510BMS, CD4516BMS
4
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1, 2
+125
o
C
-
-1.15
mA
-55
o
C
-
-2.0
mA
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1, 2
+125
o
C
-
-0.9
mA
-55
o
C
-
-1.6
mA
Output Current (Source)
IOH15
VDD =15V, VOUT = 13.5V
1, 2
+125
o
C
-
-2.4
mA
-55
o
C
-
-4.2
mA
Input Voltage Low
VIL
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25
o
C, +125
o
C, -
55
o
C
-
3
V
Input Voltage High
VIH
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25
o
C, +125
o
C, -
55
o
C
+7
-
V
Propagation Delay
Clock to Q Output
TPHL1
TPLH1
VDD = 10V
1, 2, 3
+25
o
C
-
200
ns
VDD = 15V
1, 2, 3
+25
o
C
-
150
ns
Propagation Delay
Preset or Reset to Q
TPHL2
TPLH2
VDD = 10V
1, 2, 3
+25
o
C
-
210
ns
VDD = 15V
1, 2, 3
+25
o
C
-
160
ns
Propagation Delay
Clock to Carry Out
TPHL3
TPLH3
VDD = 10V
1, 2, 3
+25
o
C
-
240
ns
VDD = 15V
1, 2, 3
+25
o
C
-
180
ns
Propagation Delay
Carry In to Carry Out
TPHL4
TPLH4
VDD = 10V
1, 2, 3
+25
o
C
-
120
ns
VDD = 15V
1, 2, 3
+25
o
C
-
100
ns
Propagation Delay Preset
or Reset to Carry Out
TPHL5
TPLH5
VDD = 10V
1, 2, 3, 4
+25
o
C
-
320
ns
VDD = 15V
1, 2, 3, 4
+25
o
C
-
250
ns
Transition Time
TTLH
TTHL
VDD = 10V
1, 2, 3
+25
o
C
-
100
ns
VDD = 15V
1, 2, 3
+25
o
C
-
80
ns
Maximum Clock Input Fre-
quency
FCL
VDD = 10V
1, 2
+25
o
C
4
-
MHz
VDD = 15V
1, 2
+25
o
C
5.5
-
MHz
Minimum Hold Time
Preset Enable to JN
TH
VDD = 5V
1, 2, 3
+25
o
C
-
70
ns
VDD = 10V
1, 2, 3
+25
o
C
-
40
ns
VDD = 15V
1, 2, 3
+25
o
C
-
40
ns
Minimum Data Setup Time
Preset Enable to JN
TS
VDD = 5V
1, 2, 3
+25
o
C
-
25
ns
VDD = 10V
1, 2, 3
+25
o
C
-
10
ns
VDD = 15V
1, 2, 3
+25
o
C
-
10
ns
Minimum Data Hold Time
Clock to Carry In
TH
VDD = 5V
1, 2, 3
+25
o
C
-
60
ns
VDD = 10V
1, 2, 3
+25
o
C
-
30
ns
VDD = 15V
1, 2, 3
+25
o
C
-
30
ns
Minimum Clock Hold Time
Clock to Up/Down
TH
VDD = 5V
1, 2, 3
+25
o
C
-
30
ns
VDD = 10V
1, 2, 3
+25
o
C
-
30
ns
VDD = 15V
1, 2, 3
+25
o
C
-
30
ns
Input Capacitance
CIN
Any Input
1, 2
+25
o
C
-
7.5
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial
design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. Reset to Carry Out (TPLH) only.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
CD4510BMS, CD4516BMS
5
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1, 4
+25
o
C
-
25
A
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
A
1, 4
+25
o
C
-2.8
-0.2
V
N Threshold Voltage
Delta
VTN
VDD = 10V, ISS = -10
A
1, 4
+25
o
C
-
1
V
P Threshold Voltage
VTP
VSS = 0V, IDD = 10
A
1, 4
+25
o
C
0.2
2.8
V
P Threshold Voltage
Delta
VTP
VSS = 0V, IDD = 10
A
1, 4
+25
o
C
-
1
V
Functional
F
VDD = 18V, VIN = VDD or GND
1
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
1, 2, 3, 4
+25
o
C
-
1.35 x
+25
o
C
Limit
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25
o
C limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25
o
C
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-2
IDD
1.0
A
Output Current (Sink)
IOL5
20% x Pre-Test Reading
Output Current (Source)
IOH5A
20% x Pre-Test Reading
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Interim Test 3 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Final Test
100% 5004
2, 3, 8A, 8B, 10, 11
Group A
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6
Sample 5005
1, 7, 9
Group D
Sample 5005
1, 2, 3, 8A, 8B, 9
Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS
MIL-STD-883
METHOD
TEST
READ AND RECORD
PRE-IRRAD
POST-IRRAD
PRE-IRRAD
POST-IRRAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
1, 9
Table 4
CD4510BMS, CD4516BMS