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Электронный компонент: CD4527BMS

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7-1216
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
CD4527BMS
CMOS BCD Rate Multiplier
Features
High Voltage Type (20V Rating)
Cascadable in Multiples of 4-Bits
Set to "9" Input and "9" Detect Output
100% Tested for Quiescent Current at 20V
5V, 10V and 15V Parametric Ratings
Maximum Input Current of 1
A at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25
o
C
Noise Margin (Over Full Package/Temperature Range)
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
Standardized Symmetrical Output Characteristics
Meets All Requirements of JEDEC Tentative Standard
No. 13B, "Standard Specifications for Description of
`B' Series CMOS Devices"
Applications
Numerical Control
Instrumentation
Digital Filtering
Frequency Synthesis
December 1992
File Number
3343
Description
CD4527BMS is a low power 4-bit digital rate multiplier that
provides an output pulse rate which is the clock input pulse
rate multiplied by 1/10 times the BCD input. For example,
when the BCD input is 8, there will be 8 output pulses for
every 10 input pulses. This device may be used to perform
arithmetic operations (add, subtract, divide, raise to a
power), solve algebraic and differential equations, generate
natural logarithms and trigonometric functions, A/D and D/A
conversion, and frequency division.
For fractional multipliers with more than one digit,
CD4527BMS devices may be cascaded in two different
modes: the Add mode and the Multiply mode (see Figures 9
and 11). In the Add mode,
In the Multiply mode, the fraction programmed into the first
rate multiplier is multiplied by the fraction programmed into
the second one,
pulses for every 100 clock input pulses.
The CD4527BMS is supplied in these 16-lead outline packages:
Output Rate =
(Clock Rate)
[0.1BCD1 + 0.01BCD2 + 0.001BCD3 + . . .]
e.g.
9
x
4
=
36
or 36 output
10
10
100
Braze Seal DIP
H4X
Frit Seal DIP
H1F
Ceramic Flatpack
H6W
Pinout
CD4527BMS
TOP VIEW
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
"9" OUT
C
D
SET TO "9"
OUT
OUT
VSS
INHIBIT OUT (CARRY)
VDD
A
CLEAR
CASCADE
INHIBIT IN (CARRY)
STROBE
CLOCK
B
Functional Diagram
VSS = 8
VDD = 16
RATE
A
SELECT
LOGIC
14
B
15
C
2
D
3
STROBE
10
CASCADE
12
BCD RATE
SELECT INPUTS
6
5
OUT
OUT
RATE
OUTPUTS
INHIBIT
(CARRY) IN
11
4
13
CLEAR
SET TO
NINE
INHIBIT
(CARRY) OUT
"9" OUT
1
7
CLOCK
9
10
COUNTER
7-1217
Specifications CD4527BMS
Absolute Maximum Ratings
Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265
o
C
At Distance 1/16
1/32 Inch (1.59mm
0.79mm) from case for
10s Maximum
Thermal Resistance . . . . . . . . . . . . . . . .
ja
jc
Ceramic DIP and FRIT Package . . . . .
80
o
C/W
20
o
C/W
Flatpack Package . . . . . . . . . . . . . . . .
70
o
C/W
20
o
C/W
Maximum Package Power Dissipation (PD) at +125
o
C
For T
A
= -55
o
C to +100
o
C (Package Type D, F, K) . . . . . . 500mW
For T
A
= +100
o
C to +125
o
C (Package Type D, F, K). . . . . . Derate
Linearity at 12mW/
o
C to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For T
A
= Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTE 1)
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1
+25
o
C
-
10
A
2
+125
o
C
-
1000
A
VDD = 18V, VIN = VDD or GND
3
-55
o
C
-
10
A
Input Leakage Current
IIL
VIN = VDD or GND
VDD = 20
1
+25
o
C
-100
-
nA
2
+125
o
C
-1000
-
nA
VDD = 18V
3
-55
o
C
-100
-
nA
Input Leakage Current
IIH
VIN = VDD or GND
VDD = 20
1
+25
o
C
-
100
nA
2
+125
o
C
-
1000
nA
VDD = 18V
3
-55
o
C
-
100
nA
Output Voltage
VOL15
VDD = 15V, No Load
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
50
mV
Output Voltage
VOH15
VDD = 15V, No Load (Note 3)
1, 2, 3
+25
o
C, +125
o
C, -55
o
C 14.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1
+25
o
C
0.53
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1
+25
o
C
1.4
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1
+25
o
C
3.5
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1
+25
o
C
-
-0.53
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1
+25
o
C
-
-1.8
mA
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1
+25
o
C
-
-1.4
mA
Output Current (Source)
IOH15
VDD = 15V, VOUT = 13.5V
1
+25
o
C
-
-3.5
mA
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
A
1
+25
o
C
-2.8
-0.7
V
P Threshold Voltage
VPTH
VSS = 0V, IDD = 10
A
1
+25
o
C
0.7
2.8
V
Functional
F
VDD = 2.8V, VIN = VDD or GND
7
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 20V, VIN = VDD or GND
7
+25
o
C
VDD = 18V, VIN = VDD or GND
8A
+125
o
C
VDD = 3V, VIN = VDD or GND
8B
-55
o
C
Input Voltage Low
(Note 2)
VIL
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
1.5
V
Input Voltage High
(Note 2)
VIH
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
3.5
-
V
Input Voltage Low
(Note 2)
VIL
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
4
V
Input Voltage High
(Note 2)
VIH
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
11
-
V
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
7-1218
Specifications CD4527BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTE 1, 2)
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
Clock to Output
TPHL1
TPLH1
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
300
ns
10, 11
+125
o
C, -55
o
C
-
405
ns
Propagation Delay
Clear to Output
TPHL2
TPLH2
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
760
ns
10, 11
+125
o
C, -55
o
C
-
1026
ns
Propagation Delay
Cascade to Output
TPHL3
TPLH3
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
180
ns
10, 11
+125
o
C, -55
o
C
-
243
ns
Transition Time
TTHL
TTLH
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
200
ns
10, 11
+125
o
C, -55
o
C
-
270
ns
Maximum Clock Input
Frequency
FCL
VDD = 5V, VIN = VDD or GND
9
+25
o
C
1.2
-
MHz
10, 11
+125
o
C, -55
o
C
.89
-
MHz
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55
o
C and +125
o
C limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 5V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
5
A
+125
o
C
-
150
A
VDD = 10V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
10
A
+125
o
C
-
300
A
VDD = 15V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
10
A
+125
o
C
-
600
A
Output Voltage
VOL
VDD = 5V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
-
50
mV
Output Voltage
VOL
VDD = 10V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
-
50
mV
Output Voltage
VOH
VDD = 5V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
4.95
-
V
Output Voltage
VOH
VDD = 10V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
9.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1, 2
+125
o
C
0.36
-
mA
-55
o
C
0.64
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1, 2
+125
o
C
0.9
-
mA
-55
o
C
1.6
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1, 2
+125
o
C
2.4
-
mA
-55
o
C
4.2
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1, 2
+125
o
C
-
-0.36
mA
-55
o
C
-
-0.64
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1, 2
+125
o
C
-
-1.15
mA
-55
o
C
-
-2.0
mA
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1, 2
+125
o
C
-
-0.9
mA
-55
o
C
-
-1.6
mA
Output Current (Source)
IOH15
VDD =15V, VOUT = 13.5V
1, 2
+125
o
C
-
-2.4
mA
-55
o
C
-
-4.2
mA
Input Voltage Low
VIL
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25
o
C, +125
o
C,
-55
o
C
-
3
V
7-1219
Specifications CD4527BMS
Input Voltage High
VIH
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25
o
C, +125
o
C,
-55
o
C
+7
-
V
Propagation Delay
Clock to Output
TPHL1
TPLH1
VDD = 10V
1, 2, 3
+25
o
C
-
150
ns
VDD = 15V
1, 2, 3
+25
o
C
-
120
ns
Propagation Delay
Clear to Output
TPHL2
TPLH2
VDD = 10V
1, 2, 3
+25
o
C
-
350
ns
VDD = 15V
1, 2, 3
+25
o
C
-
260
ns
Propagation Delay
Cascade to Output
TPHL3
TPLH3
VDD = 10V
1, 2, 3
+25
o
C
-
90
ns
VDD = 15V
1, 2, 3
+25
o
C
-
70
ns
Propagation Delay
Clock to Out
TPHL
TPLH
VDD = 5V
1, 2, 3
+25
o
C
-
220
ns
VDD = 10V
1, 2, 3
+25
o
C
-
110
ns
VDD = 15V
1, 2, 3
+25
o
C
-
90
ns
Propagation Delay
Clock to INHIBIT Out
TPHL
VDD = 5V
1, 2, 3
+25
o
C
-
640
ns
VDD = 10V
1, 2, 3
+25
o
C
-
290
ns
VDD = 15V
1, 2, 3
+25
o
C
-
200
ns
Propagation Delay
Clock to INHIBIT Out
TPLH
VDD = 5V
1, 2, 3
+25
o
C
-
500
ns
VDD = 10V
1, 2, 3
+25
o
C
-
200
ns
VDD = 15V
1, 2, 3
+25
o
C
-
150
ns
Propagation Delay
INHIBIT IN to
INHIBIT Out
TPHL
TPLH
VDD = 5V
1, 2, 3
+25
o
C
-
260
ns
VDD = 10V
1, 2, 3
+25
o
C
-
120
ns
VDD = 15V
1, 2, 3
+25
o
C
-
90
ns
Propagation Delay
Clock to "9" or "15" Out
TPHL
TPLH
VDD = 5V
1, 2, 3
+25
o
C
-
600
ns
VDD = 10V
1, 2, 3
+25
o
C
-
250
ns
VDD = 15V
1, 2, 3
+25
o
C
-
180
ns
Propagation Delay
Set to Out
TPHL
TPLH
VDD = 5V
1, 2, 3
+25
o
C
-
660
ns
VDD = 10V
1, 2, 3
+25
o
C
-
300
ns
VDD = 15V
1, 2, 3
+25
o
C
-
220
ns
Transition Time
TTHL
TTLH
VDD = 10V
1, 2, 3
+25
o
C
-
100
ns
VDD = 15V
1, 2, 3
+25
o
C
-
80
ns
Maximum Clock Input
Frequency
FCL
VDD = 10V
1, 2
+25
o
C
2.5
-
MHz
VDD = 15V
1, 2
+25
o
C
3.5
-
MHz
Minimum Data Setup
Time - Inhibit
TS
VDD = 5V
1, 2, 3
+25
o
C
-
100
ns
VDD = 10V
1, 2, 3
+25
o
C
-
40
ns
VDD = 15V
1, 2, 3
+25
o
C
-
20
ns
Minimum Inhibit Removal
Time
TREM
VDD = 5V
1, 2, 3
+25
o
C
-
240
ns
VDD = 10V
1, 2, 3
+25
o
C
-
130
ns
VDD = 15V
1, 2, 3
+25
o
C
-
110
ns
Minimum Clock Pulse
Width
TW
VDD = 5V
1, 2, 3
+25
o
C
-
330
ns
VDD = 10V
1, 2, 3
+25
o
C
-
170
ns
VDD = 15V
1, 2, 3
+25
o
C
-
100
ns
Maximum Clock Rise and
Fall Time
TRCL
TFCL
VDD = 5V
1, 2, 3, 4
+25
o
C
-
15
s
VDD = 10V
1, 2, 3, 4
+25
o
C
-
15
s
VDD = 15V
1, 2, 3, 4
+25
o
C
-
15
s
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
7-1220
Specifications CD4527BMS
Minimum Clear Removal
Time
TREM
VDD = 5V
1, 2, 3
+25
o
C
-
60
ns
VDD = 10V
1, 2, 3
+25
o
C
-
40
ns
VDD = 15V
1, 2, 3
+25
o
C
-
30
ns
Minimum Set Removal
Time
TREM
VDD = 5V
1, 2, 3
+25
o
C
-
150
ns
VDD = 10V
1, 2, 3
+25
o
C
-
80
ns
VDD = 15V
1, 2, 3
+25
o
C
-
50
ns
Minimum Set or Clear
Pulse Width
TW
VDD = 5V
1, 2, 3
+25
o
C
-
160
ns
VDD = 10V
1, 2, 3
+25
o
C
-
90
ns
VDD = 15V
1, 2, 3
+25
o
C
-
60
ns
Input Capacitance
CIN
Any Input
1, 2
+25
o
C
-
7.5
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. If more than one unit is cascaded, TRCL should be made less than or equal to the sumof the transition time and the fixed propagation
delay of the output of the driving stage for the estimated capacitive load.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1, 4
+25
o
C
-
25
A
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
A
1, 4
+25
o
C
-2.8
-0.2
V
N Threshold Voltage
Delta
VTN
VDD = 10V, ISS = -10
A
1, 4
+25
o
C
-
1
V
P Threshold Voltage
VTP
VSS = 0V, IDD = 10
A
1, 4
+25
o
C
0.2
2.8
V
P Threshold Voltage
Delta
VTP
VSS = 0V, IDD = 10
A
1, 4
+25
o
C
-
1
V
Functional
F
VDD = 18V, VIN = VDD or GND
1
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
1, 2, 3, 4
+25
o
C
-
1.35 x
+25
o
C
Limit
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25
o
C limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25
o
C
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-2
IDD
1.0
A
Output Current (Sink)
IOL5
20% x Pre-Test Reading
Output Current (Source)
IOH5A
20% x Pre-Test Reading
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX